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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB12N65E-GE3

Name: SIHB12N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB12N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB12N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB12N65E-GE3.pdf

Description:: MOSFET N-CH 650V 12A D2PAK

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Product details

Overview

SIHB12N65E-GE3 from Vishay Siliconix is a 650 V, 12 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.38 Ω @ V_GS = 10 V, Q_g = 70 nC, and avalanche-rated E_AS = 226 mJ. It serves as a high-voltage switching device in primary-side SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHB12N65E-GE3 datasheet, SIHB12N65E-GE3 pinout, SIHB12N65E-GE3 application, or SIHB12N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for fast switching, rugged UIS capability, and thermal resistance R_thJC = 0.8 °C/W for high-power density designs.

Technical Context

This MOSFET uses planar silicon technology with optimized cell layout to achieve low figure-of-merit (R_DS(on) × Q_g = 26.6 Ω·nC). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode supports freewheeling in hard-switched topologies, with t_rr = 309–618 ns and Q_rr = 3.8–7.6 μC at T_J = 25 °C. Its dV/dt rating of 37 V/ns at T_J = 125 °C enables stable operation in high-dV/dt environments like resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 1.6× safety margin in PFC and PV inverter applications
R_DS(on) max @ 10 V	0.38 Ω - limits conduction loss to ≤ 54.7 W at 12 A continuous, enabling compact heatsink design
Q_g max	70 nC - reduces gate drive power and enables >100 kHz switching with standard 1-A drivers
E_AS	226 mJ - withstands unclamped inductive energy without failure in flyback or LLC primary switches
R_thJC	0.8 °C/W - allows 156 W dissipation with ≤125 °C case-to-junction rise, critical for sealed power supplies
I_D cont @ T_C = 100 °C	8 A - defines usable current derating in thermally constrained industrial enclosures
C_iss	1224 pF - determines Miller effect and gate driver loading in high-frequency half-bridge layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance and high-current handling. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Accepts 10 V logic-level gate drive; input capacitance C_iss = 1224 pF shapes drive loop stability
D	Main current path anode	Connected to high-voltage DC bus; electrically tied to exposed copper pad for thermal and electrical conduction
S	Main current path cathode / reference	Return path for load current; source terminal referenced to gate drive ground in common-source topology

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	26.6 Ω·nC - minimizes combined switching + conduction losses in 50–200 kHz SMPS
Avalanche energy rated (UIS)	226 mJ - eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd/Q_g ratio	22.9% (16/70 nC) - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912
Body diode softness factor	t_rr/Q_rr ≈ 81 ns/μC - suppresses voltage overshoot during reverse recovery in bridge configurations

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server PSU with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 400 V DC bus to transformer primary. Use Value: 650 V rating and 226 mJ UIS enable robust operation under output short-circuit and line surge conditions without derating.	Use Scenario: DC-link switch in string-level 3.3 kVA photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Fast-turning main switch managing bidirectional power flow between PV array and grid-tied H-bridge. Use Value: Low Q_g (70 nC) and C_iss (1224 pF) reduce gate drive losses and improve efficiency at 16 kHz PWM frequency.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 5.5 kW HVAC variable-frequency drive operating at 4 kHz carrier frequency. IC Role / Device Role / Timing Role: IGBT replacement in 3-phase inverter output stage, handling 12 A RMS motor current. Use Value: R_thJC = 0.8 °C/W and 156 W P_D allow direct mounting on shared heatsink with minimal thermal interface resistance.	Use Scenario: Resonant switch in electronic ballast for 400 W HID lamp with programmed start sequence. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor in half-bridge resonant tank circuit. Use Value: Soft-recovery body diode (t_rr = 309–618 ns) prevents voltage spikes during ZVS transitions, extending lamp life.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server PSU with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 400 V DC bus to transformer primary.

Use Value: 650 V rating and 226 mJ UIS enable robust operation under output short-circuit and line surge conditions without derating.

Use Scenario: DC-link switch in string-level 3.3 kVA photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Fast-turning main switch managing bidirectional power flow between PV array and grid-tied H-bridge.

Use Value: Low Q_g (70 nC) and C_iss (1224 pF) reduce gate drive losses and improve efficiency at 16 kHz PWM frequency.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 5.5 kW HVAC variable-frequency drive operating at 4 kHz carrier frequency.

IC Role / Device Role / Timing Role: IGBT replacement in 3-phase inverter output stage, handling 12 A RMS motor current.

Use Value: R_thJC = 0.8 °C/W and 156 W P_D allow direct mounting on shared heatsink with minimal thermal interface resistance.

Use Scenario: Resonant switch in electronic ballast for 400 W HID lamp with programmed start sequence.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor in half-bridge resonant tank circuit.

Use Value: Soft-recovery body diode (t_rr = 309–618 ns) prevents voltage spikes during ZVS transitions, extending lamp life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.35 Ω, Q_g = 42 nC, E_AS = 170 mJ, TO-220FP package	Lower gate charge but lower avalanche rating; requires larger heatsink due to higher R_thJA	Preferred where gate drive power is constrained but board space allows TO-220FP mounting
IXTH12N65X2	R_DS(on) = 0.32 Ω, Q_g = 54 nC, E_AS = 250 mJ, TO-247 package	Higher avalanche energy and lower R_DS(on), but larger footprint and higher cost	Selected when maximum ruggedness is required in high-reliability industrial UPS systems

Compared with STP12N65M2 and IXTH12N65X2, SIHB12N65E-GE3 offers balanced trade-offs: D2PAK footprint saves PCB area versus TO-247, superior UIS rating versus STP12N65M2, and lower system cost than IXTH12N65X2 while maintaining 650 V/12 A capability.

Availability

SIHB12N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB12N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFETs, including SIHB12N65E-GE3, are engineered for high-voltage switching in telecom, server, and renewable energy power conversion systems where low R_DS(on) × Q_g and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current for SIHB12N65E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHB12N65E-GE3 is 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the -55 °C to +150 °C operating range. SIHB12N65E-GE3 maintains safe operation under sustained load when heatsink design accounts for R_thJC = 0.8 °C/W.

Does SIHB12N65E-GE3 have avalanche capability, and how is it rated?

Yes, SIHB12N65E-GE3 is fully rated for unclamped inductive switching (UIS) with single-pulse avalanche energy E_AS = 226 mJ at T_J = 25 °C. This rating is validated per test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A. SIHB12N65E-GE3 can safely absorb this energy without parametric shift or failure, making it suitable for flyback and forward converter primary switches.

What is the gate threshold voltage range for SIHB12N65E-GE3, and why does it matter?

The gate threshold voltage V_GS(th) for SIHB12N65E-GE3 is 2–4 V at V_DS = V_GS and I_D = 250 μA. This range ensures consistent turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering. SIHB12N65E-GE3 achieves full enhancement well below 10 V, reducing gate drive complexity and improving system robustness in noisy industrial environments.

How does the body diode performance of SIHB12N65E-GE3 compare to standard rectifiers?

SIHB12N65E-GE3 features an integrated body diode with V_SD = 1.0–1.2 V at I_S = 6 A and T_J = 25 °C, t_rr = 309–618 ns, and Q_rr = 3.8–7.6 μC. While not optimized as a dedicated freewheeling diode, its soft recovery characteristic reduces ringing in bridge circuits. SIHB12N65E-GE3 is intended for synchronous or quasi-resonant topologies where body diode conduction is brief and controlled.

Is SIHB12N65E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB12N65E-GE3 is qualified for lead-free reflow soldering with peak temperature up to 300 °C for 10 seconds, per the Soldering Recommendations section. The device is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU. SIHB12N65E-GE3 supports standard JEDEC J-STD-020 moisture sensitivity level (MSL) handling protocols for surface-mount assembly.

SIHB12N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1224 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB12N65E-GE3 FAQ

1.How can I place an order for SIHB12N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB12N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB12N65E-GE3 reliable?

The price and inventory of SIHB12N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB12N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB12N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB12N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB12N65E-GE3?

SIHB12N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB12N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB12N65E-GE3?

For technical support, including SIHB12N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB12N65E-GE3 requirements.

6.How does Aetrix verify that SIHB12N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB12N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB12N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB12N65E-GE3?

All SIHB12N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB12N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB12N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB12N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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