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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB150N60E-GE3

Name: SIHB150N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB150N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB150N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB150N60E-GE3.pdf

Description:: E SERIES POWER MOSFET D2PAK (TO-

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Product details

Overview

SIHB150N60E from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.137 Ω at V_GS = 10 V, Q_g = 24 nC (typ), and avalanche-rated (E_AS = 111 mJ). It serves as a high-efficiency primary-side switching device in hard-switched and resonant SMPS topologies for telecom and server power supplies.

For engineers reviewing the SIHB150N60E datasheet, SIHB150N60E pinout, SIHB150N60E application, or SIHB150N60E equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 58 pF, 100 V/ns dv/dt capability, and rated operation up to T_J = 150 °C - critical for high-density, high-reliability industrial and renewable energy converters.

Technical Context

This E-series MOSFET employs 4th-generation planar trench technology optimized for high-voltage switching with minimized conduction and switching losses. Its gate charge profile (Q_gs = 10 nC, Q_gd = 6 nC) supports fast, controllable turn-on/turn-off transitions under 480 V bus conditions, while the integral body diode delivers t_rr = 291 ns (typ) and Q_rr = 3.5 μC at 10 A, enabling robust performance in PFC and bridge-leg configurations.

The device's thermal design is anchored by R_thJC = 0.7 °C/W and maximum P_D = 179 W at T_C = 25 °C, with linear derating above 25 °C. Its 600 V V_DS rating and ±30 V V_GS range support gate drive flexibility across isolated and bootstrap architectures, and its UIS-rated avalanche capability ensures ruggedness against transient overvoltage events in inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with 50 % margin for surge and ringing
R_DS(on) typ @ 10 V	0.137 Ω - enables <1.4 W conduction loss at 10 A DC, reducing heatsink requirements
Q_g max	36 nC - defines total gate drive energy needed; low value eases driver selection and reduces switching loss
E_AS	111 mJ - specifies single-pulse unclamped inductive switching robustness without failure
C_o(er)	58 pF - energy-related output capacitance directly impacts turn-off loss in hard-switched converters
t_r/t_f	27/17 ns (typ) - fast edge rates support >100 kHz operation with controlled EMI generation
R_thJC	0.7 °C/W - enables efficient heat transfer from junction to heatsink via copper pad, critical for compact layouts

Pinout & Package

D2PAK (TO-263) package with exposed drain thermal pad on bottom side; 3-pin configuration (G, D, S) in standard surface-mount outline per JEDEC TO-263AB. Mounting requires solder paste stencil design per Vishay AN826 recommended pads (0.420" × 0.355").

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold V_GS(th) = 3.0–5.0 V ensures reliable turn-on with standard PWM controllers
D (Drain)	High-side power terminal	Connected to PCB thermal pad; carries full load current and must be routed with low-inductance layout for dv/dt stability
S (Source)	Reference and return path	Common node for gate drive return and current sensing; low-impedance connection essential for noise immunity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.0 nΩ·F - minimizes combined conduction + switching loss trade-off in high-frequency SMPS
Avalanche energy rating (E_AS)	111 mJ - eliminates need for external snubbers in flyback or LLC resonant converter primary switches
Co(er) = 58 pF	Reduces turn-off loss by ~30 % vs. legacy 600 V MOSFETs with comparable R_DS(on)
dv/dt immunity	100 V/ns - prevents false turn-on during high-speed switching in noisy high-power environments
Body diode Q_rr	3.5 μC (typ) - lowers reverse recovery loss in synchronous rectification and bidirectional topologies

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–200 kHz with ZVS-assisted turn-on. Use Value: Low Q_g and Co(er) reduce gate drive loss and turn-off energy, improving full-load efficiency by 0.4 % over prior-gen 600 V MOSFETs.	Use Scenario: Output rectification stage in -48 V telecom rectifier with dual active-clamp forward architecture. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in forced continuous conduction mode (FCCM) at 250 kHz. Use Value: Fast body diode recovery (t_rr = 291 ns) and low V_SD = 1.2 V minimize reverse recovery loss and conduction drop, increasing system efficiency by 0.6 % at 50 % load.
PV Inverter DC-DC Stage	Industrial Motor Drive IGBT Gate Driver
Use Scenario: Boost converter switch in string-level PV inverter DC-DC stage interfacing 600–1000 V solar arrays. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch operating at 50–100 kHz with 600 V blocking requirement and 150 °C ambient tolerance. Use Value: Rated T_J = 150 °C and R_thJC = 0.7 °C/W enable direct mounting to aluminum heatsink without thermal interface material, simplifying mechanical design.	Use Scenario: High-side level-shifting gate driver output stage powering IGBT gates in 3-phase 15 kW industrial VFD. IC Role / Device Role / Timing Role: Isolated gate driver output transistor delivering 2 A peak gate current with fast rise/fall times (t_r/t_f = 27/17 ns). Use Value: Low C_iss = 1514 pF and tight Q_gd/Q_gs ratio ensure precise Miller clamping and prevent shoot-through in high-dV/dt motor drive environments.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–200 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g and Co(er) reduce gate drive loss and turn-off energy, improving full-load efficiency by 0.4 % over prior-gen 600 V MOSFETs.

Use Scenario: Output rectification stage in -48 V telecom rectifier with dual active-clamp forward architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in forced continuous conduction mode (FCCM) at 250 kHz.

Use Value: Fast body diode recovery (t_rr = 291 ns) and low V_SD = 1.2 V minimize reverse recovery loss and conduction drop, increasing system efficiency by 0.6 % at 50 % load.

PV Inverter DC-DC Stage

Industrial Motor Drive IGBT Gate Driver

Use Scenario: Boost converter switch in string-level PV inverter DC-DC stage interfacing 600–1000 V solar arrays.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch operating at 50–100 kHz with 600 V blocking requirement and 150 °C ambient tolerance.

Use Value: Rated T_J = 150 °C and R_thJC = 0.7 °C/W enable direct mounting to aluminum heatsink without thermal interface material, simplifying mechanical design.

Use Scenario: High-side level-shifting gate driver output stage powering IGBT gates in 3-phase 15 kW industrial VFD.

IC Role / Device Role / Timing Role: Isolated gate driver output transistor delivering 2 A peak gate current with fast rise/fall times (t_r/t_f = 27/17 ns).

Use Value: Low C_iss = 1514 pF and tight Q_gd/Q_gs ratio ensure precise Miller clamping and prevent shoot-through in high-dV/dt motor drive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.125 Ω, Q_g = 42 nC, Co(er) = 72 pF, TO-247 package	Higher switching loss due to larger Q_g and Co(er); requires larger heatsink	Preferred where higher peak current (48 A) and through-hole mounting are required
IXFH32N60P	R_DS(on) = 0.155 Ω, Q_g = 29 nC, E_AS = 72 mJ, TO-247 package	Lower avalanche rating and higher R_DS(on); less suitable for unclamped inductive loads	Selected when lower gate charge is prioritized over avalanche ruggedness in soft-switched designs

Compared with STW48N60M2 and IXFH32N60P, SIHB150N60E offers superior FOM and avalanche energy in a surface-mount D2PAK package, enabling higher power density and improved reliability in space-constrained telecom and server power modules without sacrificing thermal performance.

Availability

SIHB150N60E is available at Aetrix Electronics and suitable for server and telecom power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHB150N60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching applications in datacenter, telecom, and renewable energy systems, emphasizing low FOM, rugged avalanche behavior, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHB150N60E at 100 °C case temperature?

The SIHB150N60E has a continuous drain current rating of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual board-level thermal resistance and airflow conditions in the final design. The SIHB150N60E datasheet confirms this limit applies for V_GS = 10 V and T_J ≤ 150 °C.

Does SIHB150N60E support logic-level gate drive?

No, SIHB150N60E is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may partially turn on at 5 V, full enhancement and guaranteed low R_DS(on) require ≥10 V gate drive. The SIHB150N60E is designed for standard 10–15 V gate drivers used in industrial and telecom power supplies.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHB150N60E?

The SIHB150N60E body diode has a typical reverse recovery charge Q_rr of 3.5 μC, measured at T_J = 25 °C, I_F = 10 A, di/dt = 100 A/μs, and V_R = 25 V. This value is critical for estimating commutation loss in synchronous rectification and half-bridge configurations. The SIHB150N60E datasheet lists Q_rr max as 7.0 μC, supporting design margining for worst-case thermal and dynamic conditions.

Can SIHB150N60E be used in avalanche mode repeatedly?

The SIHB150N60E is rated for single-pulse avalanche energy (E_AS) of 111 mJ, but Vishay does not specify repetitive avalanche capability. The datasheet defines E_AS under strictly controlled test conditions (L = 28.2 mH, I_AS = 2.8 A) and warns that repetitive operation in avalanche may degrade reliability. For SIHB150N60E, avalanche should be treated as a ruggedness feature for fault protection-not a design operating mode.

What is the thermal resistance from junction to case (R_thJC) for SIHB150N60E?

The SIHB150N60E has a maximum junction-to-case thermal resistance R_thJC of 0.7 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper soldering of the exposed drain pad to a minimum 1.0 in² (6.45 cm²) copper area on the PCB. The SIHB150N60E's low R_thJC enables high-power dissipation in compact surface-mount layouts typical of modern server and telecom power modules.

SIHB150N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1514 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB150N60E-GE3 FAQ

1.How can I place an order for SIHB150N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB150N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB150N60E-GE3 reliable?

The price and inventory of SIHB150N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB150N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB150N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB150N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB150N60E-GE3?

SIHB150N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB150N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB150N60E-GE3?

For technical support, including SIHB150N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB150N60E-GE3 requirements.

6.How does Aetrix verify that SIHB150N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB150N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB150N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB150N60E-GE3?

All SIHB150N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB150N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB150N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB150N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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