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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB15N50E-GE3

Name: SIHB15N50E-GE3
Brand: Vishay Siliconix
SKU: SIHB15N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB15N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB15N50E-GE3.pdf

Description:: MOSFET N-CH 500V 14.5A D2PAK

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Product details

Overview

SIHB15N50E-GE3 from Vishay Siliconix is a 500 V, 14.5 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.243 Ω at V_GS = 10 V, Q_g = 33 nC (typ), and avalanche-rated E_AS = 136 mJ - designed for high-efficiency PFC and flyback converters in ATX power supplies and LED lighting.

For engineers reviewing the SIHB15N50E-GE3 datasheet, SIHB15N50E-GE3 pinout, SIHB15N50E-GE3 application, or SIHB15N50E-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery characteristics, and real-world switching behavior under hard-switched topologies - critical for SMPS layout validation and reliability margining.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling reduced conduction and switching losses in continuous conduction mode (CCM) PFC stages. Its 500 V V_DS rating supports universal-input offline designs with margin against line transients.

The device integrates a robust intrinsic body diode with t_rr = 265 ns and Q_rr = 3.2 μC at T_J = 25 °C, supporting operation in two-switch forward and flyback converters where synchronous rectification is not used. R_thJC = 0.8 °C/W enables high-power-density thermal design when mounted on copper-clad PCBs with thermal pad soldering.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus with 25 % transient margin in industrial and computing SMPS
R_DS(on) max @ 10 V	0.280 Ω - defines worst-case conduction loss of 3.1 W at 7.5 A ID, critical for thermal budgeting
Q_g max	66 nC - determines gate drive power requirement and switching speed in 100–300 kHz PFC stages
E_AS	136 mJ - enables unclamped inductive switching survival without external snubbers in flyback designs
C_iss	1162 pF - impacts Miller effect and gate drive stability; requires careful gate resistor selection to avoid oscillation
t_r/t_f	24/18 ns (typ) - sets minimum practical dead time in half-bridge configurations to prevent shoot-through
I_D cont @ T_C = 100 °C	9.2 A - establishes usable current derating for surface-mount thermal management without heatsink

Pinout & Package

D2PAK (TO-263) package with exposed drain thermal pad on underside; standard 3-lead configuration (G, D, S) compatible with IPC-7351B footprint "D2PAK-3L".

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 1162 pF requires ≥ 9.1 Ω gate resistor to damp ringing in 400 V applications
D (Drain)	High-side power terminal	Connected to PCB thermal pad; carries full load current and absorbs avalanche energy - must be routed with ≥ 2 oz Cu and thermal vias
S (Source)	Reference node / return path	Low-inductance connection essential for accurate current sensing and stable gate drive referencing in high-dI/dt switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Reduces combined conduction + switching loss by >15 % vs. legacy 500 V MOSFETs in 200 kHz PFC, improving efficiency at 90 % load
Avalanche energy rated (UIS)	136 mJ single-pulse rating allows reliable operation during output short-circuit events without external clamping in flyback converters
Body diode t_rr = 265 ns	Enables use in non-synchronous topologies without excessive diode reverse recovery loss or voltage overshoot spikes
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile, supporting lead-free assembly up to 260 °C peak
R_thJC = 0.8 °C/W	Permits 156 W power dissipation with ≤ 120 °C junction rise over case - achievable using 4× thermal vias under drain pad on 2-layer board

Applications

PC Silver Box / ATX Power Supply	Two-Stage LED Lighting
Use Scenario: Primary-side switch in active PFC boost stage operating at 65–100 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage switching element controlling inductor current to shape AC input current waveform. Use Value: Low Q_g and C_iss minimize gate drive loss and EMI generation, while 500 V rating ensures margin against 380 V bus surges.	Use Scenario: Main switch in isolated flyback converter powering constant-current LED drivers with universal AC input. IC Role / Device Role / Timing Role: Primary-side power switch regulating energy transfer to secondary-side LED string via transformer coupling. Use Value: Avalanche rating eliminates need for external RCD clamp, reducing BOM count and board space in cost-sensitive lighting modules.
Hard-Switched Two-Switch Forward	Industrial SMPS for Control Systems
Use Scenario: High-side switch in two-switch forward topology delivering 24 V/10 A output for PLC I/O modules. IC Role / Device Role / Timing Role: Synchronized switching device handling 400 V DC input and providing galvanic isolation via transformer reset. Use Value: Fast t_r/t_f and low C_oss enable clean zero-voltage switching transition control, reducing transformer core loss and audible noise.	Use Scenario: Primary switch in DIN-rail mounted 48 V/5 A industrial power supply with extended temperature range (-40 to +85 °C ambient). IC Role / Device Role / Timing Role: Main power transistor managing high-efficiency conversion under variable load and wide input voltage conditions. Use Value: Stable R_DS(on) temperature coefficient (0.62 V/°C) ensures predictable conduction loss across full operating range, simplifying thermal design.

PC Silver Box / ATX Power Supply

Two-Stage LED Lighting

Use Scenario: Primary-side switch in active PFC boost stage operating at 65–100 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switching element controlling inductor current to shape AC input current waveform.

Use Value: Low Q_g and C_iss minimize gate drive loss and EMI generation, while 500 V rating ensures margin against 380 V bus surges.

Use Scenario: Main switch in isolated flyback converter powering constant-current LED drivers with universal AC input.

IC Role / Device Role / Timing Role: Primary-side power switch regulating energy transfer to secondary-side LED string via transformer coupling.

Use Value: Avalanche rating eliminates need for external RCD clamp, reducing BOM count and board space in cost-sensitive lighting modules.

Hard-Switched Two-Switch Forward

Industrial SMPS for Control Systems

Use Scenario: High-side switch in two-switch forward topology delivering 24 V/10 A output for PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronized switching device handling 400 V DC input and providing galvanic isolation via transformer reset.

Use Value: Fast t_r/t_f and low C_oss enable clean zero-voltage switching transition control, reducing transformer core loss and audible noise.

Use Scenario: Primary switch in DIN-rail mounted 48 V/5 A industrial power supply with extended temperature range (-40 to +85 °C ambient).

IC Role / Device Role / Timing Role: Main power transistor managing high-efficiency conversion under variable load and wide input voltage conditions.

Use Value: Stable R_DS(on) temperature coefficient (0.62 V/°C) ensures predictable conduction loss across full operating range, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) and Q_g increase conduction and switching loss; through-hole mounting limits power density	Preferred only where D2PAK reflow is unavailable or mechanical retention is required
IXTP15N50L2	500 V, 15 A, R_DS(on) = 0.28 Ω, Q_g = 42 nC, TO-220 package	Lower avalanche rating (E_AS = 85 mJ), no halogen-free compliance per JESD22-A108	Acceptable for non-avalanche-critical flyback designs but unsuitable for PFC with high line transients

Compared with STP14NK50ZFP and IXTP15N50L2, SIHB15N50E-GE3 delivers superior FOM (R_DS(on) × Q_g ≈ 8.0), surface-mount thermal performance (R_thJC = 0.8 °C/W), and certified avalanche ruggedness - making it optimal for compact, high-reliability 500 V SMPS where board space and transient immunity are constrained.

Availability

SIHB15N50E-GE3 is available at Aetrix Electronics and suitable for PC silver box power supplies, LED lighting drivers, and industrial SMPS requiring stable component supply with full RoHS and halogen-free compliance.

Supply support for SIHB15N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The E Series Power MOSFETs, including SIHB15N50E-GE3, were engineered for high-efficiency, high-reliability switch-mode power conversion in computing, lighting, and industrial systems - emphasizing low FOM, rugged avalanche capability, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current for SIHB15N50E-GE3 at 100 °C case temperature?

The SIHB15N50E-GE3 supports 9.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case resistance (R_thJC = 0.8 °C/W) and must be validated against actual PCB layout and airflow. The SIHB15N50E-GE3 datasheet confirms this rating applies under steady-state conditions with proper thermal pad soldering.

Does SIHB15N50E-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHB15N50E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 136 mJ. Testing follows JEDEC standard JESD22-A108, using L = 28.2 mH, R_g = 25 Ω, I_AS = 3.1 A, and starting T_J = 25 °C. This rating is confirmed in the Absolute Maximum Ratings table and enables robust operation during output short circuits without external clamping - a key advantage of the SIHB15N50E-GE3 in flyback and PFC designs.

What is the gate threshold voltage range for SIHB15N50E-GE3, and how does it affect drive requirements?

The SIHB15N50E-GE3 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering from noise. Because the SIHB15N50E-GE3 is not a logic-level device, 5 V microcontroller outputs cannot fully enhance it - a dedicated gate driver or level-shifting circuit is required for robust switching in high-noise environments.

How does the body diode performance of SIHB15N50E-GE3 compare to standard fast-recovery diodes?

The SIHB15N50E-GE3 body diode exhibits t_rr = 265 ns and Q_rr = 3.2 μC at T_J = 25 °C, with V_SD = 1.2 V at I_S = 7.5 A. While slower than discrete ultrafast diodes, its parameters are optimized for hard-switched flyback and forward converters where synchronous rectification is impractical. Unlike external diodes, the SIHB15N50E-GE3 body diode shares thermal mass with the MOSFET die, simplifying thermal design - though reverse recovery stress must still be managed via snubber networks.

Is SIHB15N50E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB15N50E-GE3 is lead (Pb)-free and halogen-free, qualified for JEDEC J-STD-020D Level 3 moisture sensitivity and compatible with standard lead-free reflow profiles peaking at 260 °C. The D2PAK package's thermal pad must be fully soldered to ensure both mechanical integrity and thermal performance - the SIHB15N50E-GE3 datasheet specifies recommended minimum pad dimensions and via placement to achieve R_thJC = 0.8 °C/W.

SIHB15N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1162 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB15N50E-GE3 FAQ

1.How can I place an order for SIHB15N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB15N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB15N50E-GE3 reliable?

The price and inventory of SIHB15N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB15N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB15N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB15N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB15N50E-GE3?

SIHB15N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB15N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB15N50E-GE3?

For technical support, including SIHB15N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB15N50E-GE3 requirements.

6.How does Aetrix verify that SIHB15N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB15N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB15N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB15N50E-GE3?

All SIHB15N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB15N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB15N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHB15N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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