Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB15N60E-GE3

Name: SIHB15N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB15N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHB15N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB15N60E-GE3.pdf

Description:: MOSFET N-CH 600V 15A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,347

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHB15N60E-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.28 Ω @ V_GS = 10 V, Q_g = 78 nC, and avalanche-rated (E_AS = 102 mJ). It serves as a high-voltage switching device in primary-side SMPS and PFC stages for telecom rectifiers and solar inverters.

For engineers reviewing the SIHB15N60E-GE3 datasheet, SIHB15N60E-GE3 pinout, SIHB15N60E-GE3 application, or SIHB15N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and robust UIS capability-critical for hard-switched 600 V topologies requiring reliable turn-off under inductive stress.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on with standard 10 V gate drivers, while the low C_iss (1350 pF) and C_oss (70 pF) reduce switching losses in continuous conduction mode (CCM) PFC and resonant LLC designs.

The integrated body diode exhibits t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC at T_J = 25 °C, supporting moderate-frequency hard-switching without excessive diode recovery loss. Thermal resistance R_thJC = 0.7 °C/W enables high-power operation with minimal heatsink footprint when mounted on copper-clad PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with 10 % margin for surge and ringing.
R_DS(on) max @ 10 V	0.28 Ω - delivers ≤ 1.8 W conduction loss at 8 A DC, enabling efficient operation in 300–500 W PFC stages.
Q_g max	78 nC - reduces gate drive power requirement and enables use of low-cost 1-A peak gate drivers in 100–300 kHz SMPS.
E_AS	102 mJ - withstands unclamped inductive switching events up to I_AS = 4.2 A without failure, critical for flyback and forward converters.
C_iss	1350 pF - limits Miller-induced dv/dt turn-on risk in high-side configurations; compatible with standard optocoupler-based gate drivers.
T_J range	–55 to +150 °C - supports industrial and telecom environments where ambient exceeds 70 °C and thermal cycling is frequent.
R_thJC	0.7 °C/W - allows 180 W dissipation with ≤ 126 °C junction rise above 25 °C case, simplifying thermal design for surface-mount power stages.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for enhanced thermal transfer; 3-pin configuration with G–D–S terminal layout aligned to JEDEC MO-211 standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; low Q_gs (11 nC) and Q_gd (17 nC) minimize Miller plateau duration and improve switching controllability.
D (Drain)	High-voltage power output	Connected to main DC bus; electrically tied to thermal pad-requires isolation from PCB ground plane unless referenced to system ground.
S (Source)	Power return and reference node	Serves as local ground for gate driver; low-inductance source routing essential to suppress V_GS ringing during fast dI/dt transitions.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	21.8 Ω·nC - directly lowers total switching + conduction loss in 100–200 kHz hard-switched topologies versus comparable 600 V MOSFETs.
Avalanche energy rating (E_AS)	102 mJ - eliminates need for external snubbers in cost-sensitive flyback and forward converters operating near maximum duty cycle.
Ultra-low gate charge (Q_g)	78 nC max - reduces gate driver IC power consumption and heat generation, enabling integration into compact 12 V–15 V auxiliary supplies.
Low C_iss and C_oss	1350 pF / 70 pF - improves EMI profile by lowering high-frequency current loop energy and easing compliance with CISPR-22 Class B limits.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration per doc#99912 - suitable for export-controlled and green-certified industrial systems.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward converter delivering 1.2 kW at 92 % efficiency. IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus with 150 kHz switching frequency and 45 % duty cycle. Use Value: Low Q_g minimizes gate drive loss; R_DS(on) < 0.28 Ω keeps conduction loss below 2.1 W at full load, reducing heatsink size by 35 % vs. legacy 600 V parts.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 65 kHz with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching boost switch managing 15 A peak inductor current and 400 V output rail. Use Value: Avalanche rating absorbs line surges up to 6 kV; low C_oss enables zero-voltage switching assist in transition-mode PFC, improving light-load efficiency by 1.8 %.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600 V PV array. IC Role / Device Role / Timing Role: Half-bridge upper/lower switch with 16 kHz PWM and 120 °C ambient temperature. Use Value: R_thJC = 0.7 °C/W allows direct mounting to aluminum heatsink without thermal interface pads; T_J stays < 140 °C under full load.	Use Scenario: Inverter leg switch in 7.5 HP variable-frequency drive powering HVAC compressors. IC Role / Device Role / Timing Role: 600 V IGBT replacement in 2–8 kHz V/f control topology with regenerative braking. Use Value: Body diode t_rr < 604 ns prevents shoot-through during commutation; V_SD = 1.2 V enables low-loss freewheeling without external diodes.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward converter delivering 1.2 kW at 92 % efficiency.

IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus with 150 kHz switching frequency and 45 % duty cycle.

Use Value: Low Q_g minimizes gate drive loss; R_DS(on) < 0.28 Ω keeps conduction loss below 2.1 W at full load, reducing heatsink size by 35 % vs. legacy 600 V parts.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 65 kHz with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 15 A peak inductor current and 400 V output rail.

Use Value: Avalanche rating absorbs line surges up to 6 kV; low C_oss enables zero-voltage switching assist in transition-mode PFC, improving light-load efficiency by 1.8 %.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600 V PV array.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch with 16 kHz PWM and 120 °C ambient temperature.

Use Value: R_thJC = 0.7 °C/W allows direct mounting to aluminum heatsink without thermal interface pads; T_J stays < 140 °C under full load.

Use Scenario: Inverter leg switch in 7.5 HP variable-frequency drive powering HVAC compressors.

IC Role / Device Role / Timing Role: 600 V IGBT replacement in 2–8 kHz V/f control topology with regenerative braking.

Use Value: Body diode t_rr < 604 ns prevents shoot-through during commutation; V_SD = 1.2 V enables low-loss freewheeling without external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω @ 10 V; Q_g = 85 nC; no specified E_AS rating	Lacks avalanche qualification; requires external clamping in unclamped inductive circuits	Prefer SIHB15N60E-GE3 where robustness against inductive transients is mandatory.
IXFH15N60P	R_DS(on) = 0.30 Ω @ 10 V; Q_g = 72 nC; TO-247 package (larger footprint, higher R_thJC)	Higher thermal resistance (R_thJC = 0.9 °C/W); less suitable for space-constrained D2PAK layouts	Choose SIHB15N60E-GE3 for PCB area savings and superior thermal performance in surface-mount power modules.

Compared with STP15NM60ND and IXFH15N60P, SIHB15N60E-GE3 offers the lowest R_DS(on) × Q_g FOM among 15 A/600 V D2PAK MOSFETs, combined with certified avalanche ruggedness and industry-leading R_thJC, making it optimal for high-density, high-reliability 600 V power conversion.

Availability

SIHB15N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHB15N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHB15N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability switching in 600 V hard-switched and resonant power supplies used in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current for SIHB15N60E-GE3 at 100 °C case temperature?

The SIHB15N60E-GE3 supports 9.6 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Engineers must verify heatsink design and PCB copper area to maintain T_C ≤ 100 °C under full-load conditions in the target application.

Does SIHB15N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHB15N60E-GE3 is avalanche energy rated with E_AS = 102 mJ under test condition V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A. This single-pulse rating confirms ruggedness against inductive switching stresses common in flyback, forward, and LLC converters. The device does not specify repetitive avalanche capability, so circuit design must avoid repeated unclamped inductive events.

What is the gate threshold voltage range for SIHB15N60E-GE3, and why does it matter?

The gate threshold voltage (V_GS(th)) for SIHB15N60E-GE3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage currents. A well-defined V_GS(th) window supports stable operation in digitally controlled SMPS where precise timing of gate transitions is critical to minimize cross-conduction losses.

How does the body diode performance of SIHB15N60E-GE3 compare to external fast recovery diodes?

The SIHB15N60E-GE3 body diode has t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC at T_J = 25 °C, which is slower than dedicated 600 V ultrafast diodes but sufficient for moderate-frequency hard-switching. Its V_SD = 1.0–1.2 V enables low-loss freewheeling in motor drives and PFC boost stages without adding discrete diodes-reducing BOM count and layout complexity, though not recommended for >200 kHz ZVS topologies.

Is SIHB15N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB15N60E-GE3 is qualified for lead-free reflow with a peak soldering temperature of 300 °C for 10 seconds, per its Soldering Recommendations. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is compatible with standard Pb-free SAC305 profiles. Proper pre-bake and humidity control are advised for tape-and-reel packaging prior to reflow.

SIHB15N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB15N60E-GE3 FAQ

1.How can I place an order for SIHB15N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB15N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB15N60E-GE3 reliable?

The price and inventory of SIHB15N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB15N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB15N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB15N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB15N60E-GE3?

SIHB15N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB15N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB15N60E-GE3?

For technical support, including SIHB15N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB15N60E-GE3 requirements.

6.How does Aetrix verify that SIHB15N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB15N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB15N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB15N60E-GE3?

All SIHB15N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB15N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB15N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB15N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …