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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB15N65E-GE3

Name: SIHB15N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB15N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB15N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB15N65E-GE3.pdf

Description:: MOSFET N-CH 650V 15A TO263

Quantity:: RFQ Add To RFQ list

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Inventory:7,474

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Product details

Overview

SIHB15N65E-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.28 Ω at V_GS = 10 V, Q_g = 96 nC, and avalanche-rated (E_AS = 286 mJ). It delivers low conduction and switching losses for high-efficiency 650 V SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHB15N65E-GE3 datasheet, SIHB15N65E-GE3 pinout, SIHB15N65E-GE3 application, or SIHB15N65E-GE3 equivalent, this device is selected for high-voltage hard-switched topologies requiring robust UIS capability, low C_iss (1640 pF), and thermal performance with R_thJC = 0.7 °C/W.

Technical Context

This E-series MOSFET uses planar stripe silicon technology optimized for 650 V operation, with gate charge profile engineered to balance turn-on speed and EMI control - Q_gd/Q_gs ratio of 1.9 supports stable dv/dt immunity during commutation. Its body diode exhibits t_rr = 325 ns and Q_rr = 4.6 μC at 25 °C, enabling moderate-frequency synchronous rectification in LLC resonant converters.

The device operates across -55 °C to +150 °C junction temperature range, with V_GS(th) = 2–4 V ensuring reliable gate drive margin using standard 12 V controllers. Its dV/dt rating of 37 V/ns at T_J = 125 °C confirms suitability for fast-switching industrial inverters where parasitic turn-on must be avoided.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V AC input PFC stages with 1.6× safety margin against line surges
R_DS(on) max @ 10 V	0.28 Ω - Enables <1.8 W conduction loss at 8 A DC, suitable for 300–500 W power blocks
Q_g max	96 nC - Dictates gate driver current requirement ≥ 1.9 A peak for 50 ns turn-on in 100 kHz designs
E_AS	286 mJ - Withstands single-pulse inductive energy without failure in unclamped flyback or motor drive fault conditions
C_iss	1640 pF - Low input capacitance reduces Miller-induced oscillation risk in high-dv/dt environments
R_thJC	0.7 °C/W - Allows 34 W continuous dissipation with ≤24 °C case-to-junction rise, supporting compact heatsink design
I_D cont @ 100 °C	10 A - Specifies usable current derating for sealed enclosures operating at elevated ambient temperatures

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to Q_g = 96 nC
D (Drain)	High-side power terminal	Connected to primary-side HV rail; soldered to large copper pour for thermal management and low-inductance return path
S (Source)	Reference node / return path	Serves as local ground reference for gate driver; must minimize loop inductance to suppress ringing during switching

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	26.8 Ω·nC - Optimized trade-off between conduction loss and gate drive loss in 65–100 kHz PFC stages
Avalanche energy rating	E_AS = 286 mJ - Eliminates need for external snubbers in inductive load switching applications like welding inverters
Ultra-low Q_gd	21 nC - Reduces Miller plateau duration, improving controllability during hard switching transitions
Body diode Q_rr	4.6 μC - Enables predictable reverse recovery behavior in quasi-resonant topologies without requiring active clamping
Pb-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - Supports environmentally compliant industrial and telecom manufacturing

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Active boost PFC front-end converting 90–264 V AC to 400 V DC in 1 kW server PSUs. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: R_DS(on) = 0.28 Ω and Q_g = 96 nC enable >96% efficiency at full load while maintaining thermal margin on 2-layer PCBs.	Use Scenario: High-density 48 V output rectifier in -48 V telecom systems with wide input range (36–75 V DC). IC Role / Device Role / Timing Role: Synchronous rectifier switch in phase-shifted full-bridge topology operating up to 200 kHz. Use Value: Low C_iss (1640 pF) and controlled Q_rr (4.6 μC) reduce switching loss and EMI compared to standard 600 V MOSFETs.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter
Use Scenario: Isolated DC-DC stage stepping up PV array voltage (200–1000 V) to bus voltage in string inverters. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) converter operating at 100–150 kHz. Use Value: Avalanche rating (286 mJ) ensures reliability under partial shading-induced overvoltage transients without added protection circuitry.	Use Scenario: Half-bridge leg in 3-phase VFD driving 3–7.5 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side switch handling 650 V DC bus with repetitive 600 V+ switching events and motor back-EMF spikes. Use Value: dV/dt = 37 V/ns and UIS rating prevent false triggering and catastrophic failure during motor stall or short-circuit faults.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC front-end converting 90–264 V AC to 400 V DC in 1 kW server PSUs.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: R_DS(on) = 0.28 Ω and Q_g = 96 nC enable >96% efficiency at full load while maintaining thermal margin on 2-layer PCBs.

Use Scenario: High-density 48 V output rectifier in -48 V telecom systems with wide input range (36–75 V DC).

IC Role / Device Role / Timing Role: Synchronous rectifier switch in phase-shifted full-bridge topology operating up to 200 kHz.

Use Value: Low C_iss (1640 pF) and controlled Q_rr (4.6 μC) reduce switching loss and EMI compared to standard 600 V MOSFETs.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: Isolated DC-DC stage stepping up PV array voltage (200–1000 V) to bus voltage in string inverters.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) converter operating at 100–150 kHz.

Use Value: Avalanche rating (286 mJ) ensures reliability under partial shading-induced overvoltage transients without added protection circuitry.

Use Scenario: Half-bridge leg in 3-phase VFD driving 3–7.5 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch handling 650 V DC bus with repetitive 600 V+ switching events and motor back-EMF spikes.

Use Value: dV/dt = 37 V/ns and UIS rating prevent false triggering and catastrophic failure during motor stall or short-circuit faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N65M5	R_DS(on) = 0.23 Ω, Q_g = 65 nC, lower C_iss (1350 pF), no specified E_AS rating	Better efficiency in high-frequency ZVS designs but lacks avalanche ruggedness for hard-switched PFC	Prefer STW20N65M5 when gate drive capability is limited and fault energy is externally managed
IXFH15N65X2	R_DS(on) = 0.32 Ω, Q_g = 62 nC, higher E_AS (350 mJ), TO-247 package	Superior avalanche robustness and thermal mass, but larger footprint and higher layout inductance	Choose IXFH15N65X2 for high-reliability industrial drives where board space permits TO-247 mounting

Compared with STW20N65M5 and IXFH15N65X2, SIHB15N65E-GE3 offers balanced R_DS(on)/Q_g performance and certified UIS capability in a compact D2PAK package - ideal for space-constrained, cost-sensitive 650 V SMPS where both efficiency and ruggedness are required.

Availability

SIHB15N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for SIHB15N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The E Series Power MOSFETs, including SIHB15N65E-GE3, are engineered for high-voltage switching in telecom, industrial, and renewable energy systems where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SIHB15N65E-GE3 at 100 °C case temperature?

The SIHB15N65E-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation under sustained load conditions without exceeding T_J = 150 °C. The SIHB15N65E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHB15N65E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHB15N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 286 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This validated ruggedness allows the SIHB15N65E-GE3 to absorb inductive energy without failure in unclamped inductive switching circuits such as welder output stages or relay drivers.

What is the gate threshold voltage range for SIHB15N65E-GE3, and why does it matter for gate drive design?

The SIHB15N65E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise. This margin allows use with 12 V controllers without risk of partial enhancement, and the SIHB15N65E-GE3 remains fully enhanced across its operating temperature range due to stable threshold characteristics.

Can SIHB15N65E-GE3 be used in synchronous rectification applications, and what body diode parameters support that?

Yes, SIHB15N65E-GE3 supports synchronous rectification via its integral body diode, characterized by V_SD = 1.2 V at I_S = 8 A and T_J = 25 °C, t_rr = 325 ns, and Q_rr = 4.6 μC. These values enable predictable reverse recovery in quasi-resonant LLC converters, and the SIHB15N65E-GE3's low Q_gd helps minimize shoot-through risk during dead-time transitions.

What thermal resistance values define the cooling requirements for SIHB15N65E-GE3 in PCB layout?

The SIHB15N65E-GE3 specifies R_thJC = 0.7 °C/W (junction-to-case) and R_thJA = 62 °C/W (junction-to-ambient, no heatsink). For 34 W power dissipation, a 25 °C rise above ambient requires ~35 cm² of 2 oz copper connected to the drain pad. The SIHB15N65E-GE3's D2PAK thermal pad must be soldered to a minimum 0.420″ × 0.355″ copper area per Vishay AN826 recommendations.

SIHB15N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB15N65E-GE3 FAQ

1.How can I place an order for SIHB15N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB15N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB15N65E-GE3 reliable?

The price and inventory of SIHB15N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB15N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB15N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB15N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB15N65E-GE3?

SIHB15N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB15N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB15N65E-GE3?

For technical support, including SIHB15N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB15N65E-GE3 requirements.

6.How does Aetrix verify that SIHB15N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB15N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB15N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB15N65E-GE3?

All SIHB15N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB15N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB15N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB15N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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