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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB15N80AE-GE3

Name: SIHB15N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB15N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB15N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB15N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 13A D2PAK

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Product details

Overview

SIHB15N80AE-GE3 from Vishay Siliconix is an 800 V, 13 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.304 Ω at V_GS = 10 V, Q_g = 35 nC (typ), and avalanche-rated (E_AS = 28 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and industrial inverters.

For engineers reviewing the SIHB15N80AE-GE3 datasheet, SIHB15N80AE-GE3 pinout, SIHB15N80AE-GE3 application, or SIHB15N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, low FOM (R_DS(on) × Q_g), Co(er) = 35 pF, UIS rating, and D2PAK thermal performance (R_thJC = 0.8 °C/W).

Technical Context

This MOSFET uses planar high-voltage silicon technology optimized for hard-switched 800 V applications. Its gate charge profile (Q_gs = 8 nC, Q_gd = 16 nC) supports controlled turn-on/turn-off with reduced Miller-induced oscillation risk. The integral body diode has t_rr = 333 ns (typ) and Q_rr = 3.7 μC at 25 °C, enabling moderate-frequency freewheeling in bridge topologies.

Thermal design leverages the D2PAK's low junction-to-case resistance (0.8 °C/W) and rated 156 W power dissipation at T_C = 25 °C. Safe operating area (SOA) is defined up to 10 ms pulses at 13 A/800 V, with linear derating above 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports 650 V-class DC bus designs with 23% voltage margin for transients and ripple.
R_DS(on) typ @ 10 V	0.304 Ω - Enables <1.7 W conduction loss at 7.5 A, critical for high-efficiency PFC and LLC primary switches.
Q_g max	53 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at ≤300 kHz.
E_AS	28 mJ - Confirmed single-pulse unclamped inductive switching capability, supporting robust overcurrent protection.
C_o(er)	35 pF - Low energy-related output capacitance reduces turn-off losses in hard-switched converters.
R_thJC	0.8 °C/W - Enables direct heatsink mounting for high-power density layouts without thermal interface material compromise.
I_D cont @ T_C=100°C	8 A - Specifies usable current under real-world heatsink conditions, not just ideal lab ratings.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Mounting requires soldering the drain pad to a large copper area for optimal thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; 250 µA threshold enables standard PWM controller compatibility.
D	High-voltage drain node	Connected to DC bus or transformer primary; electrically and thermally tied to PCB copper pour via exposed pad.
S	Source reference / return path	Serves as local ground reference for gate driver; carries full load current and must be routed with low inductance.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.1 Ω·nC - Reduces combined conduction and switching loss, improving efficiency in 100–300 kHz SMPS.
Avalanche energy rating (E_AS)	28 mJ - Allows operation in inductive switching circuits without external snubbers during fault events.
Low effective output capacitance (C_o(er))	35 pF - Minimizes stored energy loss during turn-off, critical for ZVS-capable topologies.
Enhanced body diode recovery	t_rr = 333 ns (typ), Q_rr = 3.7 μC - Limits reverse recovery stress in synchronous rectification and half-bridge freewheeling.
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912) - Suitable for environmentally regulated industrial and telecom systems.

Applications

Server Power Supply	PFC Circuit
Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium server PSUs operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-voltage switch in active clamp forward or LLC resonant converter primary leg. Use Value: 800 V rating accommodates 400 V DC bus + 100 V transient; low Q_g enables efficient gate drive at high frequency.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for telecom rectifiers. IC Role / Device Role / Timing Role: Main switching device handling full line-input AC rectified current. Use Value: R_DS(on) = 0.304 Ω limits conduction loss at 10 A RMS; E_AS rating ensures reliability during line surge events.
Solar Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 VDC) to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-phase inverter stage. Use Value: 800 V V_DS supports 1000 V PV arrays with safety margin; D2PAK package delivers required thermal robustness.	Use Scenario: Inverter output stage in 3–5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 600–800 V motor phase-leg switching. Use Value: Avalanche rating handles inductive kickback from motor windings; low C_o(er) reduces switching loss at 8–16 kHz PWM.

Server Power Supply

PFC Circuit

Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage switch in active clamp forward or LLC resonant converter primary leg.

Use Value: 800 V rating accommodates 400 V DC bus + 100 V transient; low Q_g enables efficient gate drive at high frequency.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching device handling full line-input AC rectified current.

Use Value: R_DS(on) = 0.304 Ω limits conduction loss at 10 A RMS; E_AS rating ensures reliability during line surge events.

Solar Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 VDC) to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-phase inverter stage.

Use Value: 800 V V_DS supports 1000 V PV arrays with safety margin; D2PAK package delivers required thermal robustness.

Use Scenario: Inverter output stage in 3–5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 600–800 V motor phase-leg switching.

Use Value: Avalanche rating handles inductive kickback from motor windings; low C_o(er) reduces switching loss at 8–16 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK80Z	800 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-247 package	Larger footprint, higher R_thJC (1.0 °C/W), no Co(er) spec	Preferred where higher peak current and through-hole mounting are required; less suitable for compact surface-mount PFC modules.
IXTH15N80L2	800 V, 15 A, R_DS(on) = 0.33 Ω, Q_g = 42 nC, TO-247 package, logic-level gate	Higher V_GS(th) (2–4 V vs. 3–5 V), no UIS rating, higher C_iss	Better for low-V_GS drive systems but lacks avalanche ruggedness; unsuitable for unclamped inductive loads.

Compared with STW15NK80Z and IXTH15N80L2, SIHB15N80AE-GE3 offers superior thermal resistance (0.8 °C/W), lower Co(er), and documented UIS capability-making it preferred for space-constrained, high-reliability 800 V SMPS and PFC where board area and transient robustness are critical.

Availability

SIHB15N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant high-voltage switching performance.

Supply support for SIHB15N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SIHB15N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered for high-efficiency, high-reliability switching in 600–800 V industrial and telecom power conversion systems.

FAQ

What is the maximum continuous drain current for SIHB15N80AE-GE3 at 100 °C case temperature?

The SIHB15N80AE-GE3 supports 8 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects real-world thermal derating when mounted on a heatsink with limited cooling capacity, and is distinct from the 13 A rating at T_C = 25 °C. Designers must verify layout thermal resistance to ensure junction temperature remains below 150 °C under full load.

Does SIHB15N80AE-GE3 have avalanche capability, and how is it specified?

Yes, SIHB15N80AE-GE3 is avalanche energy rated with E_AS = 28 mJ (single pulse, test condition: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.4 A). This rating is measured per JEDEC JESD24-1 and confirms ruggedness against inductive switching faults. It is not a repetitive rating-the device must return to safe operating temperature between events.

What is the gate threshold voltage range for SIHB15N80AE-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHB15N80AE-GE3 is 2–4 V at T_J = 25 °C, ID = 250 µA. This standard threshold enables compatibility with 10 V gate drivers common in SMPS controllers. Unlike logic-level MOSFETs, it requires ≥8 V to achieve full R_DS(on) spec-designers should avoid marginal gate drive voltages to prevent thermal runaway.

How does the Co(er) value of SIHB15N80AE-GE3 impact switching performance in hard-switched converters?

SIHB15N80AE-GE3 specifies Co(er) = 35 pF, an energy-related effective output capacitance derived from ∫C_oss·dV over 0–480 V. This low value directly reduces turn-off switching loss (E_off ≈ ½·Co(er)·V_DS²·f_sw), making it advantageous in 100–300 kHz hard-switched topologies like boost PFC or flyback where minimizing capacitive loss is critical.

Is SIHB15N80AE-GE3 suitable for use in synchronous rectification, and what body diode parameters support that?

SIHB15N80AE-GE3 is not optimized for synchronous rectification due to its relatively high V_SD = 1.2 V (at I_S = 7.5 A, T_J = 25 °C) and t_rr = 333 ns (typ). While it includes an integral body diode, its recovery characteristics and forward drop are better suited for freewheeling in high-side switching than low-loss secondary-side rectification-applications requiring <0.8 V V_SD or <100 ns t_rr should consider dedicated SR MOSFETs.

SIHB15N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1093 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB15N80AE-GE3 FAQ

1.How can I place an order for SIHB15N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB15N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB15N80AE-GE3 reliable?

The price and inventory of SIHB15N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB15N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB15N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB15N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB15N80AE-GE3?

SIHB15N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB15N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB15N80AE-GE3?

For technical support, including SIHB15N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB15N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB15N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB15N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB15N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB15N80AE-GE3?

All SIHB15N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB15N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB15N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB15N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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