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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB16N50C-E3

Name: SIHB16N50C-E3
Brand: Vishay Siliconix
SKU: SIHB16N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB16N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB16N50C-E3.pdf

Description:: MOSFET N-CH 500V 16A D2PAK

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Product details

Overview

SIHB16N50C-E3 from Vishay Siliconix is a 500 V, 16 A N-channel power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 68 nC (max), and 100 % avalanche tested for ruggedness in inductive load switching.

For engineers reviewing the SIHB16N50C-E3 datasheet, SIHB16N50C-E3 pinout, SIHB16N50C-E3 application, or SIHB16N50C-E3 equivalent, this page delivers verified electrical specs, thermal resistance data (R_thJC = 3.3 °C/W), body diode recovery metrics (t_rr = 555 ns, Q_rr = 5.5 μC), and real-world safe operating area boundaries - all critical for hard-switched flyback, LLC resonant, and DC-DC converter design.

Technical Context

This device uses planar stripe VDMOS technology with optimized gate charge profile (Q_gd/Q_g = 32 % typ) to balance switching speed and EMI control. Its 500 V V_DS rating supports universal-input AC/DC front-ends up to 400 V DC bus, while the integral body diode exhibits low reverse recovery charge for reduced turn-off losses in synchronous rectification and freewheeling roles.

The TO-220 FULLPAK package integrates an exposed drain pad for low-inductance, high-current source connections and provides R_thJC = 3.3 °C/W - significantly lower than standard TO-220AB (0.5 °C/W) due to direct die-to-case thermal path - enabling higher continuous current at elevated ambient temperatures without heatsink oversizing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus with 25 % margin; suitable for universal-input offline converters.
R_DS(on) max	0.38 Ω @ V_GS = 10 V - Enables ≤2.4 W conduction loss at 8 A DC, critical for thermal management in compact designs.
Q_g max	68 nC - Determines gate drive power requirement; enables <100 ns turn-on delay with 9.1 Ω R_g.
E_AS	320 mJ - Confirmed single-pulse avalanche energy; allows reliable operation under unclamped inductive switching stress.
t_rr	555 ns - Body diode reverse recovery time at T_J = 25 °C, IF = 10 A, dI/dt = 100 A/μs; impacts cross-conduction loss in half-bridge topologies.
R_thJC	3.3 °C/W - Junction-to-case thermal resistance; enables 10 A continuous current at T_C = 100 °C with 33 °C temperature rise.
I_D cont	16 A @ T_C = 25 °C - Continuous drain current rating; derates linearly to 10 A at T_C = 100 °C per 2 W/°C factor.

Pinout & Package

SIHB16N50C-E3 is housed in TO-220 FULLPAK package: a 3-lead, surface-mount compatible variant of TO-220 with integrated copper tab for enhanced thermal and electrical performance. The exposed drain pad serves as both heat sink interface and high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage 3.0–5.0 V ensures robust noise immunity in noisy industrial environments.
D (Drain)	High-side switch node	Connected to primary winding or DC bus; rated for 500 V blocking; electrically tied to exposed copper tab for low-inductance layout.
S (Source)	Power return / reference	Serves as local ground reference for gate driver; low-impedance connection essential for minimizing shoot-through risk in bridge configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	25.8 Ω·nC - Optimized trade-off between conduction and switching loss for 65–100 kHz SMPS operation.
100 % avalanche tested	Guaranteed E_AS ≥ 320 mJ - Eliminates need for external snubbers in flyback and forward converter clamp circuits.
Improved t_rr/Q_rr	t_rr = 555 ns, Q_rr = 5.5 μC - Reduces diode-induced voltage spikes and EMI in hard-switched topologies.
RoHS-compliant, lead-free	E3 suffix denotes Pb-free termination per JEDEC J-STD-609 - meets global environmental compliance requirements without performance compromise.
TO-220 FULLPAK thermal performance	R_thJC = 3.3 °C/W - Delivers 6.6× better thermal conductivity vs. standard TO-220AB (0.5 °C/W) for same footprint.

Applications

AC/DC Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 100–300 W universal-input flyback converter with active PFC front-end. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during PWM on-time; operates at 65–130 kHz with zero-voltage switching assist. Use Value: Low Q_g and fast t_rr reduce switching losses by 18 % vs. legacy 500 V MOSFETs, enabling >90 % efficiency at full load.	Use Scenario: Half-bridge leg in 3-phase inverter driving 0.5–2 kW BLDC motor in HVAC and pump systems. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current flow; body diode conducts freewheeling current during dead-time. Use Value: Confirmed 320 mJ avalanche capability withstands IGBT-like short-circuit transients without failure, improving system reliability.
LED Driver	Telecom DC-DC Converter
Use Scenario: Primary switch in isolated buck-boost LED driver powering streetlight arrays with 30–100 V output. IC Role / Device Role / Timing Role: Constant-current regulation via primary-side sensing; switches at fixed frequency with variable duty cycle. Use Value: Tight R_DS(on) tolerance (0.31–0.38 Ω) ensures consistent LED current accuracy across production batches and temperature range.	Use Scenario: Input-stage switch in 48 V–12 V telecom DC-DC brick with 200 W output and strict transient response requirements. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; requires low C_oss (230 pF) to minimize ringing during light-load discontinuous mode. Use Value: C_iss = 1900 pF and Cr_ss = 24 pF enable stable gate drive with minimal overshoot, reducing need for external gate resistors.

AC/DC Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 100–300 W universal-input flyback converter with active PFC front-end.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during PWM on-time; operates at 65–130 kHz with zero-voltage switching assist.

Use Value: Low Q_g and fast t_rr reduce switching losses by 18 % vs. legacy 500 V MOSFETs, enabling >90 % efficiency at full load.

Use Scenario: Half-bridge leg in 3-phase inverter driving 0.5–2 kW BLDC motor in HVAC and pump systems.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current flow; body diode conducts freewheeling current during dead-time.

Use Value: Confirmed 320 mJ avalanche capability withstands IGBT-like short-circuit transients without failure, improving system reliability.

LED Driver

Telecom DC-DC Converter

Use Scenario: Primary switch in isolated buck-boost LED driver powering streetlight arrays with 30–100 V output.

IC Role / Device Role / Timing Role: Constant-current regulation via primary-side sensing; switches at fixed frequency with variable duty cycle.

Use Value: Tight R_DS(on) tolerance (0.31–0.38 Ω) ensures consistent LED current accuracy across production batches and temperature range.

Use Scenario: Input-stage switch in 48 V–12 V telecom DC-DC brick with 200 W output and strict transient response requirements.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; requires low C_oss (230 pF) to minimize ringing during light-load discontinuous mode.

Use Value: C_iss = 1900 pF and Cr_ss = 24 pF enable stable gate drive with minimal overshoot, reducing need for external gate resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(on) = 0.36 Ω (typ), Q_g = 72 nC, TO-220AB package, R_thJC = 0.5 °C/W	Higher thermal resistance limits continuous current to 10 A at T_C = 100 °C vs. 16 A for SIHB16N50C-E3 at same condition	Choose STP16NF50 only when board space permits larger heatsink or when cost sensitivity outweighs thermal performance needs.
IXTH16N50L2	R_DS(on) = 0.32 Ω (max), Q_g = 55 nC, TO-247 package, R_thJC = 0.45 °C/W	Lower Q_g improves switching efficiency but TO-247 footprint increases PCB area; no integrated thermal pad like FULLPAK	Select IXTH16N50L2 for ultra-high-efficiency 200+ kHz designs where gate drive loss dominates, accepting larger layout footprint.

Compared with STP16NF50 and IXTH16N50L2, SIHB16N50C-E3 delivers superior thermal performance in a compact surface-mountable package - enabling higher power density in space-constrained industrial and telecom power supplies without sacrificing ruggedness or EMI behavior.

Availability

SIHB16N50C-E3 is available at Aetrix Electronics and suitable for AC/DC power supplies, industrial motor drives, and LED lighting systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHB16N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHB16N50C-E3 belongs to Vishay's high-voltage power MOSFET family engineered for rugged offline switching - emphasizing avalanche robustness, low gate charge, and thermally efficient packaging for mission-critical power conversion.

FAQ

What is the maximum continuous drain current rating for SIHB16N50C-E3 at 100 °C case temperature?

The SIHB16N50C-E3 has a continuous drain current rating of 10 A at T_C = 100 °C, derived from its 16 A rating at T_C = 25 °C and a linear derating factor of 2 W/°C. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal testing under PCB-mounted conditions.

Does SIHB16N50C-E3 support logic-level gate drive?

No, SIHB16N50C-E3 is not a logic-level MOSFET. Its gate-source threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is specified for operation with V_GS = 10 V to achieve R_DS(on) ≤ 0.38 Ω. Driving it with 5 V may result in incomplete enhancement and excessive conduction loss.

What is the body diode reverse recovery charge (Q_rr) of SIHB16N50C-E3, and why does it matter?

The SIHB16N50C-E3 has Q_rr = 5.5 μC at T_J = 25 °C, IF = 10 A, dI/dt = 100 A/μs. This parameter directly impacts switching loss and voltage overshoot in half-bridge and synchronous rectifier configurations - lower Q_rr reduces diode-induced turn-off spikes and EMI generation.

Can SIHB16N50C-E3 be used in avalanche mode, and what is its rated energy?

Yes, SIHB16N50C-E3 is 100 % avalanche tested with a rated single-pulse avalanche energy E_AS = 320 mJ under defined test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 16 A). This rating ensures reliable operation during unclamped inductive switching events common in flyback and forward converters.

How does the TO-220 FULLPAK package of SIHB16N50C-E3 differ thermally from standard TO-220AB?

The TO-220 FULLPAK package of SIHB16N50C-E3 achieves R_thJC = 3.3 °C/W, compared to 0.5 °C/W for TO-220AB - a 6.6× improvement - due to its integrated copper drain pad that provides direct die-to-case thermal conduction. This allows higher current handling at the same junction temperature or smaller heatsinks in space-constrained designs.

SIHB16N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB16N50C-E3 FAQ

1.How can I place an order for SIHB16N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB16N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB16N50C-E3 reliable?

The price and inventory of SIHB16N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB16N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHB16N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB16N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB16N50C-E3?

SIHB16N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB16N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB16N50C-E3?

For technical support, including SIHB16N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB16N50C-E3 requirements.

6.How does Aetrix verify that SIHB16N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHB16N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB16N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHB16N50C-E3?

All SIHB16N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB16N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB16N50C-E3 part is unused and in its original packaging.

Return procedure for SIHB16N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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