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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB17N80AE-GE3

Name: SIHB17N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB17N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB17N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB17N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 15A D2PAK

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Product details

Overview

SIHB17N80AE-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.250 Ω at V_GS = 10 V, Q_g = 41 nC (typ), and avalanche-rated (E_AS = 127 mJ). It delivers low conduction and switching losses for high-efficiency 800 V-class SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHB17N80AE-GE3 datasheet, SIHB17N80AE-GE3 pinout, SIHB17N80AE-GE3 application, or SIHB17N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, 0.250 Ω R_DS(on) at 10 V drive, 127 mJ UIS rating, Co(er) = 40 pF, and D2PAK thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This device uses planar high-voltage silicon technology optimized for hard-switched 800 V topologies. Its gate charge profile (Q_gd/Q_g = 18/41 ≈ 44%) supports controlled dv/dt during turn-off, while the integral body diode (V_SD = 1.2 V, t_rr = 314 ns) enables synchronous rectification and freewheeling in continuous conduction mode converters.

The MOSFET operates with ±30 V gate-source voltage tolerance and exhibits a positive V_DS temperature coefficient (0.8 V/°C), enabling inherent current sharing in parallel configurations. Its 0.7 °C/W junction-to-case thermal resistance allows 179 W power dissipation at T_C = 25 °C, supporting high-power density designs without forced air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports primary-side switching in universal-input 800 V PFC and LLC resonant converters
R_DS(on) typ	0.250 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 8.5 A DC current
Q_g max	62 nC - Determines gate driver power requirement and switching speed in 100–300 kHz SMPS
E_AS	127 mJ - Withstands unclamped inductive switching stress without failure in flyback or forward converters
Co(er)	40 pF - Reduces capacitive turn-on loss and improves efficiency in high-frequency hard-switched operation
R_thJC	0.7 °C/W - Allows direct heatsink mounting for >150 W continuous output in compact industrial PSUs
I_D cont @ T_C=100°C	10 A - Sustains full-load operation in thermally constrained telecom rectifier modules

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low-thermal-resistance mounting to heatsink. Three-terminal surface-mount configuration: Gate (G), Drain (D), Source (S). Drain tab electrically connected to die drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 10 V logic-level drive; ±30 V absolute max rating prevents ESD damage during handling
D	Drain (high-side switch node)	Exposed metal tab - must be electrically isolated and thermally coupled to heatsink; carries full load current
S	Source (return path)	Common reference for gate drive and current sensing; connects to power ground plane with low-inductance layout

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.25 Ω·nC - Balances conduction and switching loss for optimal 100–250 kHz efficiency in PFC boost stages
Avalanche energy rating	127 mJ single-pulse - Eliminates need for external snubbers in inductive load switching applications
Low effective output capacitance	Co(er) = 40 pF - Reduces turn-on loss and improves light-load efficiency in ZVS-capable topologies
Enhanced body diode recovery	t_rr = 314 ns, Q_rr = 4 μC - Minimizes reverse recovery loss and EMI in bridge-leg freewheeling paths
High dv/dt immunity	100 V/ns (T_J = 125 °C) - Resists false turn-on in high-noise, fast-switching environments like motor drives

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95% efficiency. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC bus to transformer primary. Use Value: 800 V rating enables direct use after 3-phase rectification; 0.250 Ω R_DS(on) minimizes conduction loss at 12–15 A peak currents.	Use Scenario: Boost PFC stage in 48 V telecom rectifier operating at 100–200 kHz with universal AC input. IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in continuous conduction mode (CCM) boost topology. Use Value: Low Q_g (41 nC) and Co(er) (40 pF) reduce switching loss; avalanche rating handles line transients without clamping.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter or auxiliary supply for gate drivers in central inverters. IC Role / Device Role / Timing Role: High-reliability 800 V switch handling DC bus voltages up to 700 V under overvoltage conditions. Use Value: 127 mJ E_AS withstands lightning-induced surges; R_thJC = 0.7 °C/W supports passive-cooled designs in outdoor enclosures.	Use Scenario: Brake chopper or auxiliary SMPS in 400–690 V AC variable frequency drives. IC Role / Device Role / Timing Role: Energy-dumping switch dissipating regenerative braking energy into braking resistor. Use Value: Robust UIS capability ensures reliability during sudden load changes; D2PAK package simplifies heatsinking in confined drive chassis.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95% efficiency.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC bus to transformer primary.

Use Value: 800 V rating enables direct use after 3-phase rectification; 0.250 Ω R_DS(on) minimizes conduction loss at 12–15 A peak currents.

Use Scenario: Boost PFC stage in 48 V telecom rectifier operating at 100–200 kHz with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in continuous conduction mode (CCM) boost topology.

Use Value: Low Q_g (41 nC) and Co(er) (40 pF) reduce switching loss; avalanche rating handles line transients without clamping.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter or auxiliary supply for gate drivers in central inverters.

IC Role / Device Role / Timing Role: High-reliability 800 V switch handling DC bus voltages up to 700 V under overvoltage conditions.

Use Value: 127 mJ E_AS withstands lightning-induced surges; R_thJC = 0.7 °C/W supports passive-cooled designs in outdoor enclosures.

Use Scenario: Brake chopper or auxiliary SMPS in 400–690 V AC variable frequency drives.

IC Role / Device Role / Timing Role: Energy-dumping switch dissipating regenerative braking energy into braking resistor.

Use Value: Robust UIS capability ensures reliability during sudden load changes; D2PAK package simplifies heatsinking in confined drive chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, R_DS(on) = 0.065 Ω, TO-247 package	Limited to 600 V systems; higher current rating but lower voltage margin	Select when system DC bus ≤ 450 V and higher continuous current (>20 A) is required
IXFH32N80X	800 V V_DS, 32 A I_D, R_DS(on) = 0.24 Ω, TO-247 package, Q_g = 105 nC	Higher Q_g increases gate drive loss; larger TO-247 footprint vs. D2PAK	Choose for higher current derating margin in space-tolerant industrial designs where layout area is not constrained

Compared with STW48N60M2 and IXFH32N80X, SIHB17N80AE-GE3 offers optimal balance of 800 V rating, D2PAK thermal performance, and moderate gate charge for compact, high-efficiency 1–2 kW power supplies-without requiring TO-247 mechanical redesign or sacrificing voltage safety margin.

Availability

SIHB17N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHB17N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHB17N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered specifically for high-efficiency, high-power-density switch-mode power supplies operating at 800 V DC bus levels.

FAQ

What is the maximum continuous drain current for SIHB17N80AE-GE3 at 100 °C case temperature?

The SIHB17N80AE-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and ensures safe operation without exceeding the 150 °C maximum junction temperature. The 15 A rating applies only at T_C = 25 °C with ideal cooling.

Does SIHB17N80AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHB17N80AE-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 127 mJ. This is measured under standardized conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3 A. The rating confirms ruggedness against transient overvoltage events in inductive circuits without external protection.

What is the typical gate charge profile of SIHB17N80AE-GE3, and why does it matter?

The SIHB17N80AE-GE3 has Q_g = 41 nC (typ), Q_gs = 8 nC, and Q_gd = 18 nC at V_GS = 10 V. This profile determines gate driver sizing and switching behavior: the relatively high Q_gd/Q_g ratio (~44%) provides strong Miller immunity, reducing risk of spurious turn-on during high dv/dt transitions in high-side configurations.

Can SIHB17N80AE-GE3 be used in synchronous rectification applications?

No - SIHB17N80AE-GE3 is a standard-threshold N-channel MOSFET intended for high-side switching, not synchronous rectification. Its body diode (V_SD = 1.2 V, t_rr = 314 ns) is optimized for freewheeling, not low-loss conduction. For synchronous rectification, dedicated low-V_F, fast-recovery devices such as SiC Schottky diodes or logic-level MOSFETs with enhanced diode specs are recommended instead of SIHB17N80AE-GE3.

What is the thermal resistance from junction to case (R_thJC) for SIHB17N80AE-GE3, and how does it impact heatsink design?

The SIHB17N80AE-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.7 °C/W, measured across the D2PAK drain tab. This low value enables efficient heat transfer to an external heatsink - for example, at 10 A and 0.250 Ω R_DS(on), conduction loss is ~2.5 W, resulting in only ~1.75 °C temperature rise across the junction-to-case path. This simplifies thermal design in space-constrained server and telecom power modules.

SIHB17N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB17N80AE-GE3 FAQ

1.How can I place an order for SIHB17N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB17N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB17N80AE-GE3 reliable?

The price and inventory of SIHB17N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB17N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB17N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB17N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB17N80AE-GE3?

SIHB17N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB17N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB17N80AE-GE3?

For technical support, including SIHB17N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB17N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB17N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB17N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB17N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB17N80AE-GE3?

All SIHB17N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB17N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB17N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB17N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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