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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB17N80E-GE3

Name: SIHB17N80E-GE3
Brand: Vishay Siliconix
SKU: SIHB17N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB17N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB17N80E-GE3.pdf

Description:: MOSFET N-CH 800V 15A D2PAK

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Product details

Overview

SIHB17N80E-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.25 Ω at V_GS = 10 V, Q_g = 61 nC (typ), and avalanche-rated E_AS = 353 mJ - designed for high-voltage, medium-power switching in telecom and server SMPS primary-side circuits.

For engineers reviewing the SIHB17N80E-GE3 datasheet, SIHB17N80E-GE3 pinout, SIHB17N80E-GE3 application, or SIHB17N80E-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low gate charge for ZVS/ZCS compatibility, robust UIS capability, and thermal resistance R_thJC = 0.6 °C/W enabling high-power-density designs without forced airflow.

Technical Context

This device employs a planar high-voltage trench-enhanced silicon process optimized for reduced conduction and switching losses in hard-switched topologies. Its low C_iss (2408 pF) and ultra-low Q_gd/Q_g ratio (23/61 nC) support fast, controllable turn-on/turn-off with minimal Miller-induced oscillation risk.

The integrated body diode exhibits t_rr = 416 ns (typ) and Q_rr = 6.4 μC at 25 °C, enabling reliable operation in PFC boost stages and flyback snubber recovery paths where diode reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input rectified to ~565 V DC bus with 40 % margin for voltage spikes in telecom/server PSUs.
R_DS(on) typ	0.25 Ω at V_GS = 10 V - delivers ≤ 18 W conduction loss at 8.5 A DC, enabling compact heatsinking in 1–3 kW power stages.
Q_g max	122 nC - enables efficient gate drive with standard 1–2 A peak drivers; low Q_gd/Q_g ratio improves switching controllability.
E_AS	353 mJ - rated for unclamped inductive switching events up to I_AS = 5.0 A, supporting robustness in PFC and resonant LLC primary switches.
R_thJC	0.6 °C/W - allows >150 W continuous power dissipation with modest heatsink (e.g., 10 °C/W), critical for high-reliability industrial power supplies.
C_iss	2408 pF - low input capacitance reduces gate drive power and improves high-frequency switching stability in >100 kHz designs.
t_rr	416 ns (typ) - fast body diode recovery minimizes shoot-through risk and switching loss in synchronous rectification and bidirectional topologies.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 (D) and thermally coupled to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; low input capacitance (C_iss) enables fast edge rates with minimal driver stress.
D (Drain)	High-voltage output node	Connected to 800 V DC bus; large copper area required for thermal transfer and current handling (15 A continuous).
S (Source)	Reference and return path	Common source for gate drive loop; must be routed with low inductance to minimize V_GS ringing during switching transitions.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.25 Ω × 61 nC = 15.25 Ω·nC - balances conduction and switching loss for optimal efficiency in 65–200 kHz SMPS.
Avalanche energy rated (UIS)	353 mJ single-pulse - eliminates need for external clamping in inductive load switching, reducing BOM count and layout complexity.
Ultra-low Q_gd	23 nC - suppresses Miller plateau duration, enabling precise timing control and minimizing cross-conduction risk in half-bridge configurations.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912 - suitable for green industrial and telecom equipment.
High dV/dt immunity	70 V/ns at T_J = 125 °C - resists false turn-on in high-noise environments like motor drives and welding inverters.

Applications

Server Primary-Side Switch	Telecom Rectifier PFC Stage
Use Scenario: High-efficiency 80+ Titanium 3 kW front-end converter operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main high-side switch handling 800 V DC link voltage and 12 A RMS primary current. Use Value: Low R_DS(on) and Q_g reduce total switching + conduction loss by ≥12 % vs. legacy 900 V MOSFETs, improving system efficiency from 96.2 % to 97.1 %.	Use Scenario: Boost PFC stage in 48 V telecom rectifier with universal AC input (90–264 V AC) and 1.5 kW output. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC output and 5.5 A average inductor current. Use Value: Low C_iss and controlled Q_rr enable stable zero-current switching (ZCS) transition, cutting EMI filter size by 30 % and meeting CISPR-22 Class B limits.
Solar PV Inverter DC-DC Stage	Industrial Battery Charger Output Stage
Use Scenario: Isolated DC-DC converter in string-level solar inverter, stepping down 1000 V DC input to 400 V intermediate bus. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 125 kHz with soft switching. Use Value: Avalanche rating ensures reliability during grid fault transients; R_thJC = 0.6 °C/W sustains 100 % load at 60 °C ambient without derating.	Use Scenario: High-voltage DC-DC stage in 800 V battery charger for EV infrastructure, converting 400 V AC input to 800 V DC output. IC Role / Device Role / Timing Role: Primary switch in LLC resonant converter handling 800 V DC bus and 10 A peak current. Use Value: Tight V_GS(th) range (2.0–4.0 V) enables precise gate drive threshold setting, preventing spurious turn-on during high-dV/dt commutation events.

Server Primary-Side Switch

Telecom Rectifier PFC Stage

Use Scenario: High-efficiency 80+ Titanium 3 kW front-end converter operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switch handling 800 V DC link voltage and 12 A RMS primary current.

Use Value: Low R_DS(on) and Q_g reduce total switching + conduction loss by ≥12 % vs. legacy 900 V MOSFETs, improving system efficiency from 96.2 % to 97.1 %.

Use Scenario: Boost PFC stage in 48 V telecom rectifier with universal AC input (90–264 V AC) and 1.5 kW output.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC output and 5.5 A average inductor current.

Use Value: Low C_iss and controlled Q_rr enable stable zero-current switching (ZCS) transition, cutting EMI filter size by 30 % and meeting CISPR-22 Class B limits.

Solar PV Inverter DC-DC Stage

Industrial Battery Charger Output Stage

Use Scenario: Isolated DC-DC converter in string-level solar inverter, stepping down 1000 V DC input to 400 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 125 kHz with soft switching.

Use Value: Avalanche rating ensures reliability during grid fault transients; R_thJC = 0.6 °C/W sustains 100 % load at 60 °C ambient without derating.

Use Scenario: High-voltage DC-DC stage in 800 V battery charger for EV infrastructure, converting 400 V AC input to 800 V DC output.

IC Role / Device Role / Timing Role: Primary switch in LLC resonant converter handling 800 V DC bus and 10 A peak current.

Use Value: Tight V_GS(th) range (2.0–4.0 V) enables precise gate drive threshold setting, preventing spurious turn-on during high-dV/dt commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, R_DS(on) = 0.055 Ω, Q_g = 75 nC - lower voltage rating but significantly lower on-resistance and gate charge.	Best suited for 380 V DC bus systems (e.g., 3-phase rectified input); not rated for 800 V applications like PV string inverters.	Select when system DC bus ≤ 600 V and lowest possible conduction loss is prioritized over voltage margin.
IXFH30N80X	800 V V_DS, R_DS(on) = 0.24 Ω, Q_g = 135 nC - same voltage rating and similar R_DS(on), but higher gate charge increases driver loss and slows switching.	Higher Q_g limits usable frequency in ZVS designs; requires stronger gate driver and larger gate resistor for safe operation.	Choose only if existing design uses IXYS footprint and thermal constraints allow higher switching loss budget.

Compared with STW48N60M2 and IXFH30N80X, SIHB17N80E-GE3 uniquely balances 800 V capability, low R_DS(on) × Q_g FOM, and industry-standard D2PAK thermal performance - making it optimal for new 800 V telecom, server, and solar designs requiring both margin and efficiency.

Availability

SIHB17N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHB17N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHB17N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switching in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHB17N80E-GE3 at 100 °C case temperature?

The SIHB17N80E-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 15 A rating at 25 °C reflects thermal limitations of the D2PAK package; proper PCB copper area and heatsinking are required to sustain this current reliably in long-term operation.

Does SIHB17N80E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHB17N80E-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 353 mJ. Testing follows JEDEC standard JESD24-1: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 5.0 A - confirming ruggedness under realistic inductive fault conditions encountered in PFC and LLC converters.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB17N80E-GE3, and why does it matter?

The SIHB17N80E-GE3 body diode has t_rr = 416 ns (typ) at T_J = 25 °C, I_F = 8.5 A, di/dt = 100 A/μs, and V_R = 25 V. This value directly impacts switching loss and EMI in topologies where the body diode conducts during dead-time (e.g., half-bridge, synchronous rectification); faster recovery reduces voltage overshoot and ringback.

Can SIHB17N80E-GE3 be used with 5 V gate drive, or is 10 V mandatory?

SIHB17N80E-GE3 is not a logic-level MOSFET: its V_GS(th) range is 2.0–4.0 V, but R_DS(on) is specified only at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (>1.2 Ω), increasing conduction loss beyond acceptable levels. Therefore, 10 V gate drive is mandatory to achieve the rated 0.25 Ω on-resistance and full 15 A current capability.

What is the thermal resistance from junction to case (R_thJC) for SIHB17N80E-GE3, and how does it affect heatsink design?

The SIHB17N80E-GE3 has R_thJC = 0.6 °C/W (max), measured from junction to the drain tab. This low value means that for a 100 W power dissipation, the junction-to-case temperature rise is only 60 °C - allowing use of moderate-performance heatsinks (e.g., 10 °C/W) while maintaining T_J < 150 °C at 60 °C ambient, simplifying thermal management in space-constrained server and telecom modules.

SIHB17N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2408 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB17N80E-GE3 FAQ

1.How can I place an order for SIHB17N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB17N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB17N80E-GE3 reliable?

The price and inventory of SIHB17N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB17N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB17N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB17N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB17N80E-GE3?

SIHB17N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB17N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB17N80E-GE3?

For technical support, including SIHB17N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB17N80E-GE3 requirements.

6.How does Aetrix verify that SIHB17N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB17N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB17N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB17N80E-GE3?

All SIHB17N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB17N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB17N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHB17N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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