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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB17N80E-T1-GE3

Name: SIHB17N80E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHB17N80E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB17N80E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB17N80E-T1-GE3.pdf

Description:: MOSFET N-CH 800V 15A D2PAK

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Product details

Overview

SIHB17N80E-T1-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.25 Ω at V_GS = 10 V, Q_g = 61 nC (typ), and E_AS = 353 mJ - optimized for high-voltage switching in server power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHB17N80E-T1-GE3 datasheet, SIHB17N80E-T1-GE3 pinout, SIHB17N80E-T1-GE3 application, or SIHB17N80E-T1-GE3 equivalent, this device delivers verified avalanche ruggedness, low C_iss (2408 pF), and ultra-low gate charge to reduce conduction and switching losses in hard-switched 400–800 V DC-link topologies.

Technical Context

This MOSFET employs planar high-voltage silicon technology with a fully rated 800 V V_DS and 150 °C maximum junction temperature, enabling operation in continuous conduction mode (CCM) PFC and resonant LLC primary-side switches. Its 0.6 °C/W R_thJC supports high-power density thermal design when mounted on copper-clad PCBs with thermal pads.

The device integrates a fast-recovery body diode (t_rr = 416 ns typ, Q_rr = 6.4 μC) and exhibits dV/dt immunity up to 70 V/ns at T_J = 125 °C - critical for noise-immune operation in high-frequency SMPS with tight layout constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 650 V and 700 V DC-link designs with 15 % margin for voltage transients
R_DS(on) typ @ 10 V	0.25 Ω - enables ≤2.1 W conduction loss at 9.2 A RMS in 3 kW PFC stage
Q_g max	122 nC - reduces gate drive power and allows use of lower-current drivers (e.g., UCC27611)
E_AS	353 mJ - withstands unclamped inductive switching events without failure in motor drive or welder H-bridges
C_iss	2408 pF - minimizes Miller-induced turn-on risk during high-dV/dt commutation
t_r/t_f	24/26 ns (typ) - supports >200 kHz switching in ZVS/ZCS topologies with controlled EMI
I_D cont @ T_C = 100 °C	10 A - defines safe operating area for thermally constrained heatsinkless PCB-mount applications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <1.4 Ω gate resistance to limit ringing and overshoot
D (Drain)	High-side power output	Connected to DC-link; must be routed with minimum loop area to suppress EMI and voltage spikes
S (Source)	Reference node / return path	Provides Kelvin sense point for current monitoring; ties to power ground plane with low-inductance path

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.25 Ω·nC - balances conduction and switching loss for optimal efficiency in 1–5 kW SMPS
Avalanche-rated (UIS)	353 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd/Q_g ratio	0.19 (23/122 nC) - improves hard-switching robustness and reduces Miller plateau duration
Body diode t_rr & Q_rr	416 ns / 6.4 μC - enables synchronous rectification replacement in flyback and forward converters
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - suitable for lead-free assembly

Applications

Server Power Supply	PFC Front-End
Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with interleaved boost topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input and delivering regulated 12 V/275 A output. Use Value: 0.25 Ω R_DS(on) limits conduction loss to <1.8 W at full load; 353 mJ E_AS absorbs line surge without derating.	Use Scenario: Active clamp forward converter in industrial UPS with 750 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor in high-side position, operating at 100 kHz with zero-voltage switching assist. Use Value: 2408 pF C_iss and 9 pF Crss enable precise timing control of dead time; 70 V/ns dV/dt rating prevents false turn-on.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600–800 V PV array. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge leg, driven by isolated gate driver (e.g., Si823Hx). Use Value: 800 V V_DS accommodates 120 % overvoltage per IEC 62109; 0.6 °C/W R_thJC enables direct thermal coupling to heatsink via soldered drain pad.	Use Scenario: Resonant tank switch in 8 kW induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch managing high di/dt (>100 A/μs) in series-resonant load. Use Value: Body diode Q_rr = 6.4 μC minimizes reverse recovery loss; 45 A pulsed ID ensures headroom during burst-mode peak currents.

Server Power Supply

PFC Front-End

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with interleaved boost topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input and delivering regulated 12 V/275 A output.

Use Value: 0.25 Ω R_DS(on) limits conduction loss to <1.8 W at full load; 353 mJ E_AS absorbs line surge without derating.

Use Scenario: Active clamp forward converter in industrial UPS with 750 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in high-side position, operating at 100 kHz with zero-voltage switching assist.

Use Value: 2408 pF C_iss and 9 pF Crss enable precise timing control of dead time; 70 V/ns dV/dt rating prevents false turn-on.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600–800 V PV array.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge leg, driven by isolated gate driver (e.g., Si823Hx).

Use Value: 800 V V_DS accommodates 120 % overvoltage per IEC 62109; 0.6 °C/W R_thJC enables direct thermal coupling to heatsink via soldered drain pad.

Use Scenario: Resonant tank switch in 8 kW induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power switch managing high di/dt (>100 A/μs) in series-resonant load.

Use Value: Body diode Q_rr = 6.4 μC minimizes reverse recovery loss; 45 A pulsed ID ensures headroom during burst-mode peak currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, R_DS(on) = 0.065 Ω, Q_g = 105 nC - lower voltage rating but lower R_DS(on)	Restricted to ≤400 V DC-link systems; unsuitable for 800 V solar or telecom rectifiers	Select only for cost-sensitive 600 V applications where 20 % voltage margin is acceptable
IXFH32N80X	800 V V_DS, R_DS(on) = 0.27 Ω, Q_g = 140 nC - higher gate charge and slightly higher on-resistance	Higher switching loss in >150 kHz designs; requires stronger gate driver due to 140 nC Q_g	Preferable only when legacy IXYS footprint compatibility is required; otherwise SIHB17N80E-T1-GE3 offers better FOM

Compared with STW48N60M2 and IXFH32N80X, SIHB17N80E-T1-GE3 delivers the lowest R_DS(on) × Q_g figure-of-merit (15.25 Ω·nC) among 800 V devices, enabling higher efficiency in space-constrained 3–5 kW power stages without sacrificing avalanche ruggedness or thermal performance.

Availability

SIHB17N80E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHB17N80E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHB17N80E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in demanding power conversion applications including PFC, DC-DC, and motor control.

FAQ

What is the maximum continuous drain current for SIHB17N80E-T1-GE3 at 100 °C case temperature?

The SIHB17N80E-T1-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 15 A rating at 25 °C and ensures safe operation under sustained high-temperature conditions in enclosed power supplies. The linear derating factor is 1.7 W/°C beyond 100 °C.

Does SIHB17N80E-T1-GE3 have avalanche capability, and how is it rated?

Yes, SIHB17N80E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 353 mJ at T_J = 25 °C. This rating is measured under standardized conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5.0 A) and confirms ruggedness against transient overloads in motor drives and welding equipment.

What is the gate threshold voltage range for SIHB17N80E-T1-GE3, and why does it matter?

The gate threshold voltage (V_GS(th)) for SIHB17N80E-T1-GE3 is 2.0 V to 4.0 V at T_J = 25 °C. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. A well-defined threshold supports predictable timing in high-frequency SMPS and avoids shoot-through in half-bridge configurations when paired with matched complementary devices.

Can SIHB17N80E-T1-GE3 be used in surface-mount reflow processes, and what is its peak temperature rating?

Yes, SIHB17N80E-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per JEDEC J-STD-020. Its D2PAK (TO-263) package features Pb-free and halogen-free construction, making it compatible with standard Class 3 IPC-A-610 assembly processes and ensuring reliability in high-volume manufacturing environments.

How does the body diode performance of SIHB17N80E-T1-GE3 compare to standard FRDs in PFC applications?

The SIHB17N80E-T1-GE3 body diode delivers t_rr = 416 ns and Q_rr = 6.4 μC at T_J = 25 °C, which is significantly faster than typical 600 V FRDs (t_rr > 1 μs). This enables reduced reverse recovery loss and lower EMI in critical conduction mode (CCM) PFC, though discrete FRDs remain preferred for highest efficiency in >3 kW designs where dedicated diode optimization is required.

SIHB17N80E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2408 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB17N80E-T1-GE3 FAQ

1.How can I place an order for SIHB17N80E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB17N80E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB17N80E-T1-GE3 reliable?

The price and inventory of SIHB17N80E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB17N80E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB17N80E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB17N80E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB17N80E-T1-GE3?

SIHB17N80E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB17N80E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB17N80E-T1-GE3?

For technical support, including SIHB17N80E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB17N80E-T1-GE3 requirements.

6.How does Aetrix verify that SIHB17N80E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB17N80E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB17N80E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB17N80E-T1-GE3?

All SIHB17N80E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB17N80E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB17N80E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHB17N80E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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