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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB180N60E-GE3

Name: SIHB180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB180N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB180N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB180N60E-GE3.pdf

Description:: MOSFET N-CH 600V 19A D2PAK

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Product details

Overview

SIHB180N60E-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.155 Ω R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and 111 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHB180N60E-GE3 datasheet, SIHB180N60E-GE3 pinout, SIHB180N60E-GE3 application, or SIHB180N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) capacitance, and rated UIS capability - critical for hard-switched, high-voltage DC-DC and AC-DC converter designs requiring robustness and efficiency.

Technical Context

This E-series MOSFET employs 4th-generation superjunction technology to minimize conduction and switching losses simultaneously. Its 0.155 Ω R_DS(on) at 10 V drive and 22 nC typical Q_g enable efficient operation at high frequencies up to 300 kHz in continuous conduction mode (CCM) PFC and resonant LLC topologies.

The device integrates an avalanche-rated body diode with 282 ns typical reverse recovery time (trr) and 3.6 μC Q_rr, supporting ZVS-assisted transitions. Thermal resistance R_thJC of 0.8 °C/W allows 156 W power dissipation at T_C = 25 °C, enabling compact heatsink integration in space-constrained 1U server PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for voltage transients in industrial and telecom rectified inputs
R_DS(on) typ @ 10 V	0.155 Ω - enables ≤ 14 W conduction loss at 9.5 A RMS in PFC boost stage at 100 °C junction
Q_g max	33 nC - determines gate driver current requirement (~1.7 A peak for 20 ns rise time with 9.1 Ω R_g)
E_AS	111 mJ - ensures reliable unclamped inductive switching survival in flyback or forward converters without snubbers
C_o(er)	41 pF - reduces capacitive turn-on loss and improves light-load efficiency vs. legacy 600 V MOSFETs
T_J range	–55 to +150 °C - qualified for extended temperature operation in outdoor solar inverters and industrial motor drives
R_thJC	0.8 °C/W - permits direct mounting to copper-clad PCB or small heatsink for thermal management in high-density layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Drain tab is electrically connected to Pin 2 and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Control electrode	Receives 10 V gate drive; requires <1.4 Ω gate resistance to limit ringing while maintaining 14 ns turn-on delay
D (Pin 2 / Tab)	High-side power terminal	Connected to drain metallization and thermal pad; must be soldered to ≥ 250 mm² copper pour for R_thJA < 30 °C/W
S (Pin 3)	Reference node	Source return path for load current and gate drive loop; critical for minimizing common-source inductance in high-di/dt switching

Key Features

Feature	Design Value
4th-generation E-series superjunction	Reduces R_DS(on) × Q_g FOM by 35 % vs. prior generation, directly lowering combined switching + conduction loss
Avalanche energy rating (UIS)	111 mJ single-pulse - eliminates need for external clamping in overvoltage fault conditions during startup or line surge
Low effective output capacitance Co(er)	41 pF - cuts turn-on energy loss (½ × Co(er) × V_DS²) by ~40 % compared to standard 600 V MOSFETs at 480 V bus
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for green electronics manufacturing and export compliance
150 °C maximum junction temperature	Enables derated operation at 125 °C ambient in sealed enclosures without forced air, extending reliability in fanless systems

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW 1U redundant AC-DC power supplies with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: High-side main switch in continuous conduction mode (CCM) PFC boost stage and synchronous rectifier control in LLC half-bridge. Use Value: 0.155 Ω R_DS(on) and 33 nC Q_g enable >96 % system efficiency at full load while maintaining thermal headroom on 2-layer PCB.	Use Scenario: 48 V distributed power architecture (DPA) rectifier modules handling 200–500 V AC input with high PF and low THD. IC Role / Device Role / Timing Role: Fast-switching switch in interleaved PFC front-end and isolated DC-DC flyback controller primary side. Use Value: 111 mJ E_AS withstands 6 kV lightning surge test per IEC 61000-4-5 without failure, reducing system-level protection cost.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage bridge leg switch in three-phase inverter stage operating at 16 kHz PWM with field-oriented control. Use Value: 150 °C T_J rating and 0.8 °C/W R_thJC allow operation at 75 °C ambient without derating, improving inverter uptime in rooftop installations.	Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 600 V three-phase inverter legs, driven by isolated gate drivers with 15 V supply. Use Value: Body diode trr = 282 ns and Q_rr = 3.6 μC reduce shoot-through risk and commutation loss vs. fast recovery diodes in freewheeling paths.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW 1U redundant AC-DC power supplies with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: High-side main switch in continuous conduction mode (CCM) PFC boost stage and synchronous rectifier control in LLC half-bridge.

Use Value: 0.155 Ω R_DS(on) and 33 nC Q_g enable >96 % system efficiency at full load while maintaining thermal headroom on 2-layer PCB.

Use Scenario: 48 V distributed power architecture (DPA) rectifier modules handling 200–500 V AC input with high PF and low THD.

IC Role / Device Role / Timing Role: Fast-switching switch in interleaved PFC front-end and isolated DC-DC flyback controller primary side.

Use Value: 111 mJ E_AS withstands 6 kV lightning surge test per IEC 61000-4-5 without failure, reducing system-level protection cost.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in three-phase inverter stage operating at 16 kHz PWM with field-oriented control.

Use Value: 150 °C T_J rating and 0.8 °C/W R_thJC allow operation at 75 °C ambient without derating, improving inverter uptime in rooftop installations.

Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 600 V three-phase inverter legs, driven by isolated gate drivers with 15 V supply.

Use Value: Body diode trr = 282 ns and Q_rr = 3.6 μC reduce shoot-through risk and commutation loss vs. fast recovery diodes in freewheeling paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 65 nC (higher), TO-247 package	Higher conduction efficiency but larger footprint and slower switching; requires larger gate driver	Prefer when conduction loss dominates and layout space allows TO-247; avoid in high-frequency PFC where Q_g penalty increases driver loss
IXFH30N60X	R_DS(on) = 0.135 Ω, Q_g = 42 nC, TO-247 package, no UIS rating	Lower R_DS(on) but no avalanche specification; higher switching loss due to greater Q_g and C_oss	Select only in non-UIS-critical applications like fixed-frequency SMPS with well-controlled transients; not recommended for telecom rectifiers with surge exposure

Compared with STW48N60M2 and IXFH30N60X, SIHB180N60E-GE3 offers superior FOM balance and surface-mount D2PAK packaging for automated assembly, while its certified UIS rating provides design margin absent in the alternatives - making it optimal for high-reliability, high-density, and transient-prone power systems.

Availability

SIHB180N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB180N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications including PFC, server/telecom PSUs, and industrial inverters - engineered for low FOM, avalanche robustness, and thermal performance in demanding environments.

FAQ

What is the maximum continuous drain current rating for SIHB180N60E-GE3 at 100 °C case temperature?

The SIHB180N60E-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be verified against actual board layout and airflow. The SIHB180N60E-GE3 maintains safe operation within its SOA curve up to this current when R_thJC is maintained at ≤ 0.8 °C/W.

Does SIHB180N60E-GE3 support logic-level gate drive?

No, SIHB180N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it with 5 V logic will result in incomplete enhancement and excessive conduction loss. The SIHB180N60E-GE3 requires a minimum 10 V gate drive for full performance and thermal safety in production designs.

What is the significance of the "-GE3" suffix in SIHB180N60E-GE3?

The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609A Class 3 moisture sensitivity level (MSL-3), with NiPdAu plating and compliant with RoHS Directive 2011/65/EU. It confirms the SIHB180N60E-GE3 meets environmental standards for automated SMT assembly and long-term reliability without Pb-based solder compatibility concerns.

Can SIHB180N60E-GE3 replace older Vishay 600 V MOSFETs like SIHB24N60E?

SIHB180N60E-GE3 is not a direct drop-in replacement for SIHB24N60E due to differences in R_DS(on) (0.155 Ω vs. 0.135 Ω), Q_g (33 nC vs. 42 nC), and thermal resistance. While both share D2PAK packaging and 600 V rating, the SIHB180N60E-GE3 offers lower gate charge and improved FOM, but gate drive timing and snubber design may require revalidation. System-level testing is required before substitution.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHB180N60E-GE3?

The SIHB180N60E-GE3 body diode has a typical reverse recovery charge Q_rr of 3.6 μC at T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 25 V. This value is critical for estimating commutation loss in synchronous rectification and half-bridge configurations. The SIHB180N60E-GE3's Q_rr is optimized for soft recovery, reducing EMI and voltage overshoot during diode turn-off.

SIHB180N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1085 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB180N60E-GE3 FAQ

1.How can I place an order for SIHB180N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB180N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB180N60E-GE3 reliable?

The price and inventory of SIHB180N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB180N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB180N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB180N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB180N60E-GE3?

SIHB180N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB180N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB180N60E-GE3?

For technical support, including SIHB180N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB180N60E-GE3 requirements.

6.How does Aetrix verify that SIHB180N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB180N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB180N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB180N60E-GE3?

All SIHB180N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB180N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB180N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB180N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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