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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB18N60E-GE3

Name: SIHB18N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB18N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB18N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB18N60E-GE3.pdf

Description:: MOSFET N-CH 600V 18A TO263

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Product details

Overview

SIHB18N60E-GE3 from Vishay Siliconix is a 600 V, 18 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.176 Ω at V_GS = 10 V, Q_g = 46 nC (typ), and E_AS = 204 mJ - optimized for high-efficiency switch-mode power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHB18N60E-GE3 datasheet, SIHB18N60E-GE3 pinout, SIHB18N60E-GE3 application, or SIHB18N60E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance R_thJC = 0.7 °C/W, and body diode recovery performance (t_rr = 300 ns, Q_rr = 4 μC) in hard-switched converters.

Technical Context

This device employs planar stripe silicon technology with optimized charge balance for reduced conduction and switching losses. Its low C_iss (1640 pF) and ultra-low Q_gd/Q_g ratio (18/46 nC) support fast, controllable turn-on/turn-off transitions in high-frequency (>100 kHz) topologies.

The integral body diode is rated for repetitive ID = 18 A and exhibits controlled reverse recovery (dI/dt = 100 A/μs, I_RRM = 26 A), enabling reliable operation in bridge-leg configurations without external snubbers in moderate-duty PFC and motor drive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with 50 % safety margin for surge and ringing
R_DS(on) typ @ 10 V	0.176 Ω - enables <1.5 W conduction loss at 9 A DC in 100 °C ambient designs
Q_g typ	46 nC - reduces gate driver power demand and allows use of low-cost 1-A peak drivers
E_AS	204 mJ - withstands unclamped inductive switching events in 480 V bus applications
t_rr	300 ns - limits diode recovery overshoot and EMI in hard-commutated half-bridges
R_thJC	0.7 °C/W - supports >150 W continuous dissipation with standard heatsink mounting on D2PAK tab
C_iss	1640 pF - minimizes Miller-induced shoot-through risk in synchronous rectification

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated drain tab (pin 2), standard 3-pin layout, and RoHS-compliant lead (Pb)-free/halogen-free finish per JEDEC MO-211.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <10 nF total gate capacitance for stable switching
D (Drain)	High-side power output	Connected to drain tab (pin 2); electrically tied to PCB copper pour for thermal and current path
S (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	8.1 Ω·nC - improves efficiency in 65–300 kHz SMPS by reducing combined switching + conduction loss
Avalanche-rated (UIS)	204 mJ single-pulse energy - eliminates need for external clamping in PFC boost inductors
Low C_iss and C_rss	1640 pF / 6 pF - suppresses Miller plateau duration and enables clean voltage transition in LLC resonant converters
Body diode Q_rr	4 μC - reduces diode recovery loss and associated heat in bidirectional flyback and phase-shifted full-bridge
150 °C T_J rating	Enables operation in sealed industrial enclosures without derating below 11 A continuous current at 100 °C case

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.5 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage primary switch handling 400 V DC bus, switching at 200 kHz with zero-voltage turn-on. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >95 % efficiency at full load.	Use Scenario: DC-link switching stage in string inverter with 1000 V DC input and transformerless design. IC Role / Device Role / Timing Role: N-channel high-side switch in H-bridge leg, operating with 16 kHz PWM and soft-switching control. Use Value: Avalanche rating ensures robustness against DC-link voltage transients during grid fault conditions.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Inverter output stage for 5 HP variable-frequency drive powering induction motors in HVAC systems. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting up to 18 A RMS with 10 kHz carrier frequency. Use Value: Body diode t_rr and Q_rr minimize commutation loss and EMI during freewheeling intervals.	Use Scenario: Resonant half-bridge switch in electronic ballast for T5/T8 fluorescent lamps (220–240 V AC input). IC Role / Device Role / Timing Role: Fast-switching power switch operating above 40 kHz in series-resonant topology with capacitive start. Use Value: Low C_iss and tight Q_gd/Q_g ratio enable precise zero-current switching timing control.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage primary switch handling 400 V DC bus, switching at 200 kHz with zero-voltage turn-on.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >95 % efficiency at full load.

Use Scenario: DC-link switching stage in string inverter with 1000 V DC input and transformerless design.

IC Role / Device Role / Timing Role: N-channel high-side switch in H-bridge leg, operating with 16 kHz PWM and soft-switching control.

Use Value: Avalanche rating ensures robustness against DC-link voltage transients during grid fault conditions.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Inverter output stage for 5 HP variable-frequency drive powering induction motors in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting up to 18 A RMS with 10 kHz carrier frequency.

Use Value: Body diode t_rr and Q_rr minimize commutation loss and EMI during freewheeling intervals.

Use Scenario: Resonant half-bridge switch in electronic ballast for T5/T8 fluorescent lamps (220–240 V AC input).

IC Role / Device Role / Timing Role: Fast-switching power switch operating above 40 kHz in series-resonant topology with capacitive start.

Use Value: Low C_iss and tight Q_gd/Q_g ratio enable precise zero-current switching timing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60DM6	600 V, 18 A, R_DS(on) = 0.19 Ω, Q_g = 42 nC, D²PAK package	Lower Q_g but higher R_DS(on); slightly lower E_AS (180 mJ)	Preferred where gate drive capability is limited but thermal margin is available
IXFH18N60X3	600 V, 18 A, R_DS(on) = 0.18 Ω, Q_g = 52 nC, TO-247 package	Higher Q_g, larger TO-247 footprint, superior R_thJC (0.45 °C/W)	Selected when higher power dissipation (>200 W) and forced-air cooling are used

Compared with STP18N60DM6 and IXFH18N60X3, SIHB18N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and industry-standard D2PAK thermal interface - making it optimal for space-constrained 100–150 W/inch³ power modules requiring high reliability without oversized heatsinks.

Availability

SIHB18N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHB18N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFETs, including SIHB18N60E-GE3, were engineered for high-frequency, high-reliability switch-mode power conversion in demanding industrial and renewable energy applications.

FAQ

What is the maximum continuous drain current rating for SIHB18N60E-GE3 at 100 °C case temperature?

The SIHB18N60E-GE3 is rated for 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained conduction; actual usable current depends on PCB copper area, heatsinking, and ambient airflow. The SIHB18N60E-GE3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHB18N60E-GE3 support logic-level gate drive?

No, SIHB18N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it is characterized and optimized for 10 V gate drive to achieve R_DS(on) = 0.176 Ω. Driving SIHB18N60E-GE3 with only 5 V may result in incomplete enhancement and excessive conduction loss. The SIHB18N60E-GE3 requires a dedicated 10 V gate driver stage.

What is the avalanche energy rating of SIHB18N60E-GE3 and how is it tested?

The SIHB18N60E-GE3 has a single-pulse unclamped inductive switching (UIS) avalanche energy rating of 204 mJ, measured per test condition: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.8 A. This rating confirms ruggedness against transient overvoltage events in boost and flyback topologies. The SIHB18N60E-GE3 is fully specified for repetitive avalanche operation within datasheet limits.

Can SIHB18N60E-GE3 be used in synchronous rectification applications?

SIHB18N60E-GE3 is not recommended for synchronous rectification due to its relatively high R_DS(on) and non-optimized body diode characteristics. Its Q_rr = 4 μC and t_rr = 300 ns are suitable for freewheeling in hard-switched topologies but lack the fast, soft recovery needed for high-frequency SR. For synchronous rectification, dedicated low-V_F, low-Q_rr devices such as SiHB24N60E or trench-SiC alternatives are preferred over SIHB18N60E-GE3.

What is the thermal resistance from junction to case (R_thJC) for SIHB18N60E-GE3?

The maximum junction-to-case thermal resistance R_thJC for SIHB18N60E-GE3 is 0.7 °C/W, measured from junction to the drain tab (pin 2). This value assumes proper soldering to a minimum 1-inch² 2-oz copper pad with thermal vias. The SIHB18N60E-GE3's low R_thJC enables high-power density designs - for example, dissipating 125 W with only 87.5 °C temperature rise across the junction-to-tab interface.

SIHB18N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 202mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB18N60E-GE3 FAQ

1.How can I place an order for SIHB18N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB18N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB18N60E-GE3 reliable?

The price and inventory of SIHB18N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB18N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB18N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB18N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB18N60E-GE3?

SIHB18N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB18N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB18N60E-GE3?

For technical support, including SIHB18N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB18N60E-GE3 requirements.

6.How does Aetrix verify that SIHB18N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB18N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB18N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB18N60E-GE3?

All SIHB18N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB18N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB18N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB18N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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