Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB20N50E-GE3

Name: SIHB20N50E-GE3
Brand: Vishay Siliconix
SKU: SIHB20N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHB20N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB20N50E-GE3.pdf

Description:: MOSFET N-CH 500V 19A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,422

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHB20N50E-GE3 from Vishay Siliconix is a 500 V, 19 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.160 Ω R_DS(on) at V_GS = 10 V, 92 nC total gate charge, and 204 mJ single-pulse avalanche energy rating - optimized for high-efficiency PFC and flyback converters in ATX power supplies.

For engineers reviewing the SIHB20N50E-GE3 datasheet, SIHB20N50E-GE3 pinout, SIHB20N50E-GE3 application, or SIHB20N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust dV/dt immunity (70 V/ns), and integrated body diode with 293 ns reverse recovery time - critical for hard-switched SMPS topologies requiring reliable unclamped inductive switching.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low input capacitance (1640 pF C_iss) and minimized gate-drain charge (19 nC Q_gd), directly reducing Miller-induced switching losses in continuous conduction mode PFC stages. Its 0.7 °C/W junction-to-case thermal resistance enables high-power-density designs without forced airflow.

The device is rated for repetitive operation up to T_J = 150 °C and features a fully avalanche-rated structure validated per UIS testing (E_AS = 204 mJ at I_AS = 3.8 A). Its V_GS(th) range of 2.0–4.0 V ensures stable turn-on margin across temperature while avoiding spurious conduction in noisy environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus applications with 25 % voltage margin for surge and ringing
R_DS(on) max @ 10 V	0.184 Ω - limits conduction loss to ≤18.4 W at 10 A, enabling thermally constrained PCB layouts
Q_g max	92 nC - determines gate driver current requirement (≥1.8 A peak for 50 ns turn-on)
E_AS	204 mJ - withstands unclamped inductive energy in PFC boost choke failure scenarios
C_iss	1640 pF - sets high-frequency input impedance and impacts gate drive loop stability
dV/dt immunity	70 V/ns - prevents false turn-on during fast voltage transients in bridge-leg configurations
I_D continuous @ T_C = 100 °C	12 A - defines maximum sustained current under typical heatsink conditions

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance (R_thJC = 0.7 °C/W); 3-pin configuration with G–D–S terminal arrangement and drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <10 Ω series resistance to damp oscillation from 1640 pF C_iss
D (Drain)	High-side power switch node	Connected to PCB copper pour for thermal dissipation; electrically tied to backside metal tab
S (Source)	Power return reference	Provides Kelvin connection point for current sensing; referenced to gate driver ground in half-bridge layouts

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.9 Ω·nC - reduces combined conduction + switching loss in 65–100 kHz PFC stages
Avalanche-rated structure	204 mJ E_AS - eliminates need for external snubbers in flyback primary switches
Fast body diode recovery	293 ns t_rr, 4.0 μC Q_rr - minimizes cross-conduction loss in synchronous rectification
High dV/dt immunity	70 V/ns - maintains gate control integrity during 400 V bus switching edges
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for consumer and industrial end-equipment

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC output bus and 19 A peak inductor current. IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) PFC controller stage. Use Value: 0.160 Ω R_DS(on) and 92 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin on 2-layer PCB.	Use Scenario: Primary-side switch in isolated flyback LED driver delivering 100 W to constant-current output. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding. Use Value: 204 mJ E_AS rating tolerates transformer leakage inductance spikes without clamping circuitry.
Hard-Switched SMPS	Industrial AC-DC Adapter
Use Scenario: Two-switch forward converter in telecom power system with 36–75 V input and 12 V/20 A output. IC Role / Device Role / Timing Role: Upper switch in dual-MOSFET forward topology handling 500 V blocking and 12 A RMS current. Use Value: 70 V/ns dV/dt immunity prevents false triggering during dead-time transitions in synchronous gate drive.	Use Scenario: Primary-side switch in universal-input (90–264 VAC) 65 W adapter with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: Standalone PFC switch before resonant converter, operating in critical conduction mode (CrCM). Use Value: 1640 pF C_iss and 19 nC Q_gd reduce capacitive feedthrough and improve light-load efficiency vs. legacy 550 V MOSFETs.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC output bus and 19 A peak inductor current.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) PFC controller stage.

Use Value: 0.160 Ω R_DS(on) and 92 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin on 2-layer PCB.

Use Scenario: Primary-side switch in isolated flyback LED driver delivering 100 W to constant-current output.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding.

Use Value: 204 mJ E_AS rating tolerates transformer leakage inductance spikes without clamping circuitry.

Hard-Switched SMPS

Industrial AC-DC Adapter

Use Scenario: Two-switch forward converter in telecom power system with 36–75 V input and 12 V/20 A output.

IC Role / Device Role / Timing Role: Upper switch in dual-MOSFET forward topology handling 500 V blocking and 12 A RMS current.

Use Value: 70 V/ns dV/dt immunity prevents false triggering during dead-time transitions in synchronous gate drive.

Use Scenario: Primary-side switch in universal-input (90–264 VAC) 65 W adapter with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Standalone PFC switch before resonant converter, operating in critical conduction mode (CrCM).

Use Value: 1640 pF C_iss and 19 nC Q_gd reduce capacitive feedthrough and improve light-load efficiency vs. legacy 550 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	R_DS(on) = 0.22 Ω (higher), Q_g = 75 nC (lower), TO-220FP package	Limited to lower-power (<150 W) designs due to higher conduction loss and inferior thermal resistance (R_thJC = 1.5 °C/W)	Prefer when cost sensitivity outweighs efficiency targets and board space allows through-hole mounting
IXFH20N50P	R_DS(on) = 0.20 Ω, E_AS = 150 mJ, TO-247 package with isolated tab	Requires insulated mounting hardware; lower avalanche capability reduces margin in high-inductance PFC chokes	Select when existing TO-247 footprint reuse is mandatory and thermal interface can accommodate higher R_thJC

Compared with STP20NM50FP and IXFH20N50P, SIHB20N50E-GE3 delivers superior power density via D2PAK thermal performance (0.7 °C/W), lowest R_DS(on) × Q_g FOM among 500 V 20 A MOSFETs, and highest E_AS rating - making it optimal for compact, high-reliability 200–300 W SMPS where board area and thermal headroom are constrained.

Availability

SIHB20N50E-GE3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial AC-DC adapters requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHB20N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHB20N50E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switching in computing and lighting power conversion systems where low gate charge and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for SIHB20N50E-GE3 at 100 °C case temperature?

The SIHB20N50E-GE3 supports 12 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 19 A rating at 25 °C case temperature and must be verified against actual PCB copper area and ambient conditions in the final design. SIHB20N50E-GE3's 0.7 °C/W R_thJC enables this current level with modest heatsinking.

Does SIHB20N50E-GE3 have a fully rated avalanche capability?

Yes, SIHB20N50E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 204 mJ under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.8 A). This rating is validated per JEDEC JESD24-1 and ensures robustness against inductive switching faults in PFC and flyback topologies. SIHB20N50E-GE3 does not specify repetitive avalanche rating.

What is the gate threshold voltage range for SIHB20N50E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHB20N50E-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage currents. SIHB20N50E-GE3 is not a logic-level MOSFET and requires ≥8 V for full enhancement.

Can SIHB20N50E-GE3 be used in synchronous rectification applications?

SIHB20N50E-GE3 is not recommended for synchronous rectification due to its body diode characteristics: t_rr = 293 ns and Q_rr = 4.0 μC are optimized for hard-switched primary-side use, not low-loss freewheeling. Its V_SD = 1.2 V at 10 A also exceeds typical SR MOSFET forward drops. For secondary-side switching, dedicated low-V_F Schottky or logic-level MOSFETs are preferred over SIHB20N50E-GE3.

What is the recommended gate resistor value for SIHB20N50E-GE3 in a 100 kHz PFC application?

A gate resistor of 9.1 Ω is used in the datasheet's switching time test (V_DD = 400 V, I_D = 10 A), yielding t_d(on) = 17–34 ns and t_f = 25–50 ns. For 100 kHz PFC, 5–15 Ω is typical to balance switching loss reduction against EMI and gate drive strength. SIHB20N50E-GE3's 92 nC Q_g requires ≥2 A peak gate current for sub-50 ns transitions - verify driver capability before finalizing R_g.

SIHB20N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB20N50E-GE3 FAQ

1.How can I place an order for SIHB20N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB20N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB20N50E-GE3 reliable?

The price and inventory of SIHB20N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB20N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB20N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB20N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB20N50E-GE3?

SIHB20N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB20N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB20N50E-GE3?

For technical support, including SIHB20N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB20N50E-GE3 requirements.

6.How does Aetrix verify that SIHB20N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB20N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB20N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB20N50E-GE3?

All SIHB20N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB20N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB20N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHB20N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …