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Vishay Siliconix SIHB21N60EF-GE3
- Part No.:
- SIHB21N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB21N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 21A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:30
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Product details
Overview
SIHB21N60EF-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring ultra-low gate charge (84 nC max), fast body diode (trr = 135–270 ns), and avalanche-rated ruggedness (EAS = 367 mJ). It delivers low RDS(on) of 0.176 Ω at VGS = 10 V and is optimized for high-frequency ZVS LLC resonant converters in telecom and solar inverters.
For engineers reviewing the SIHB21N60EF-GE3 datasheet, SIHB21N60EF-GE3 pinout, SIHB21N60EF-GE3 application, or SIHB21N60EF-GE3 equivalent, key selection criteria include its 600 V blocking voltage, fast-recovery body diode performance, low Qg × RDS(on) figure-of-merit, and thermal robustness in high-power SMPS topologies.
Technical Context
This MOSFET employs Vishay's EF-series silicon technology to reduce reverse recovery charge (Qrr = 0.76–1.52 μC) and peak reverse recovery current (IRRM = 11 A), enabling reliable operation in phase-shifted bridge and 3-level inverter circuits. Its low Ciss (2030 pF typ.) and Crss (5 pF) support clean switching with minimal Miller-induced turn-on risk.
The device integrates an optimized body diode with dV/dt immunity up to 50 V/ns and is rated for unclamped inductive switching (UIS) at TJ = 150 °C. Its RthJC of 0.55 °C/W enables high-power dissipation in compact D2PAK layouts without external heatsink derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports primary-side switching in 400 V DC bus systems with 50 V margin for voltage spikes |
| RDS(on) max @ 10 V | 0.176 Ω - enables <1.9 W conduction loss at 11 A continuous drain current |
| Qg max | 84 nC - reduces gate drive power and allows use with low-current drivers in high-frequency designs |
| trr max | 270 ns - minimizes diode recovery losses and EMI in hard- and soft-switched topologies |
| EAS | 367 mJ - ensures single-pulse avalanche survivability during transient overvoltage events |
| RthJC | 0.55 °C/W - permits 227 W power dissipation with ≤125 °C case-to-junction rise under forced-air cooling |
| Qrr max | 1.52 μC - lowers switching loss and stress on synchronous rectifiers in resonant converters |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per JEDEC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; low input capacitance (Ciss = 2030 pF) eases driver sizing |
| D (Drain) | High-voltage power terminal | Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB |
| S (Source) | Reference node for gate drive and current sensing | Provides Kelvin source connection path for accurate RDS(on)-based current monitoring |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 135–270 ns and Qrr = 0.76–1.52 μC enable efficient operation in ZVS LLC and PSFB without external SiC diodes |
| Low FOM (RDS(on) × Qg) | 14.8 Ω·nC typical - balances conduction and switching losses for 100–500 kHz SMPS designs |
| Avalanche energy rating | EAS = 367 mJ - eliminates need for external clamping in inductive load switching applications |
| Low Coss and Crss | Coss = 105 pF, Crss = 5 pF - reduces capacitive turn-off loss and improves light-load efficiency |
| High dV/dt immunity | 50 V/ns reverse diode dV/dt rating - prevents false turn-on during fast voltage transients in bridge legs |
Applications
| Telecom Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW LLC resonant DC/DC converter for 48 V server rack power distribution. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 300–400 kHz with zero-voltage switching. Use Value: Fast body diode and low Qrr minimize dead-time losses and improve efficiency by >0.8% at full load versus standard superjunction MOSFETs. | Use Scenario: Upper-leg switch in three-phase 10 kW string inverter H-bridge stage interfacing 600 V DC PV array. IC Role / Device Role / Timing Role: Hard-switched 600 V switch handling bidirectional current during reactive power control. Use Value: Avalanche rating and 0.55 °C/W RthJC allow sustained 14 A operation at TC = 100 °C without derating in outdoor enclosures. |
| LED Streetlight Driver | Industrial Battery Charger |
Use Scenario: Main switch in 200 W isolated flyback driver powering high-brightness LED arrays with dimming via primary-side regulation. IC Role / Device Role / Timing Role: Single-ended forward-conducting switch with integrated body diode conducting during demagnetization. Use Value: Low VSD (0.9–1.2 V) and fast trr reduce conduction loss and audible noise during boundary-conduction mode (BCM) operation. | Use Scenario: Output-stage synchronous rectifier in 3 kW multi-stage charger converting 400 V DC to 58 V battery bank with active current sharing. IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET used as controlled rectifier with gate driven by transformer-coupled signal. Use Value: Low RDS(on) and Kelvin source pin enable precise current sensing and <1.2% output ripple at 100 A charging current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW21N60M2 | 600 V, 21 A, RDS(on) = 0.18 Ω, Qg = 72 nC, no UIS rating | Lacks avalanche energy rating; requires external snubbers in inductive switching | Prefer SIHB21N60EF-GE3 where unclamped inductive stress is expected |
| IXTH20N60L2 | 600 V, 20 A, RDS(on) = 0.22 Ω, Qg = 65 nC, trr = 220 ns, Qrr = 1.3 μC | Higher RDS(on) increases conduction loss; slightly slower diode but comparable Qrr | Choose SIHB21N60EF-GE3 for lower on-resistance and higher current capability in thermally constrained layouts |
Compared with STW21N60M2 and IXTH20N60L2, SIHB21N60EF-GE3 offers superior avalanche ruggedness and lower RDS(on), making it preferred for ZVS topologies and high-reliability industrial power supplies where layout constraints limit snubber design flexibility.
Availability
SIHB21N60EF-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHB21N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The EF Series MOSFETs are engineered for high-frequency, high-efficiency switching in resonant and soft-switched topologies-targeting next-generation AC/DC and DC/DC conversion in renewable energy and data center infrastructure.
FAQ
What is the maximum continuous drain current for SIHB21N60EF-GE3 at 100 °C case temperature?
The SIHB21N60EF-GE3 supports a continuous drain current of 14 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal limits under steady-state conduction and assumes proper PCB copper area and airflow. At TC = 25 °C, the rating rises to 21 A, and pulsed current capability reaches 53 A.
Does SIHB21N60EF-GE3 have a fully characterized body diode suitable for synchronous rectification?
Yes, the SIHB21N60EF-GE3 features a fast, low-Qrr body diode with trr = 135–270 ns and Qrr = 0.76–1.52 μC, explicitly characterized for use in freewheeling and synchronous rectification roles. Its VSD = 0.9–1.2 V at IS = 11 A and dI/dt = 100 A/μs makes it viable for BCM and DCM flyback secondaries without external diode replacement.
What is the gate threshold voltage range for SIHB21N60EF-GE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SIHB21N60EF-GE3 is specified from 2.0 V to 4.0 V at ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. The device is not a logic-level MOSFET and requires ≥8 V for full RDS(on) specification compliance; using SIHB21N60EF-GE3 with 5 V drive results in significantly elevated on-resistance.
How is the thermal performance of SIHB21N60EF-GE3 validated, and what is its RthJC value?
The SIHB21N60EF-GE3 has a maximum junction-to-case thermal resistance (RthJC) of 0.55 °C/W, measured from die to the exposed drain pad per JEDEC JESD51 standards. This value is validated across multiple production lots and is used to calculate allowable power dissipation: PD = (TJ(max) − TC)/RthJC = (150 − 100)/0.55 ≈ 91 W at TC = 100 °C.
Is SIHB21N60EF-GE3 suitable for phase-shifted full-bridge (PSFB) topologies, and why?
Yes, SIHB21N60EF-GE3 is specifically qualified for phase-shifted full-bridge topologies due to its fast body diode (trr ≤ 270 ns), low Qrr, and 50 V/ns reverse diode dV/dt rating. These characteristics prevent shoot-through during ZVS transitions and reduce circulating current losses. The SIHB21N60EF-GE3 datasheet explicitly lists PSFB among supported topologies, confirming its suitability for high-efficiency 1–5 kW isolated DC/DC stages.
SIHB21N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 176mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 227W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB21N60EF-GE3 FAQ
1.How can I place an order for SIHB21N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB21N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB21N60EF-GE3 reliable?
The price and inventory of SIHB21N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB21N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB21N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB21N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB21N60EF-GE3?
SIHB21N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB21N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB21N60EF-GE3?
For technical support, including SIHB21N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB21N60EF-GE3 requirements.
6.How does Aetrix verify that SIHB21N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB21N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB21N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB21N60EF-GE3?
All SIHB21N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB21N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB21N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHB21N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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