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Vishay Siliconix SIHB21N65EF-GE3
- Part No.:
- SIHB21N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB21N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 21A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:143
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Product details
Overview
SIHB21N65EF-GE3 from Vishay Siliconix is a 650 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring ultra-low gate charge (71 nC typ), fast body diode (trr = 160 ns), and low RDS(on) of 0.15 Ω at 10 V VGS - optimized for high-efficiency ZVS phase-shifted bridge and LCC resonant converters in telecom and solar inverters.
For engineers reviewing the SIHB21N65EF-GE3 datasheet, SIHB21N65EF-GE3 pinout, SIHB21N65EF-GE3 application, or SIHB21N65EF-GE3 equivalent, key selection criteria include its 367 mJ single-pulse avalanche rating, 0.5 °C/W junction-to-case thermal resistance, and E-series fast-body-diode technology enabling reduced Qrr and switching losses in hard- and soft-switching SMPS topologies.
Technical Context
This device employs Vishay's E-series silicon process to co-optimize body diode recovery (Qrr = 1.2 μC, trr = 160 ns) and conduction loss (RDS(on) = 0.15 Ω), targeting zero-voltage-switching (ZVS) operation where reverse recovery behavior directly impacts efficiency and EMI. Its low Ciss (2322 pF) and Crss (4 pF) support high-frequency gate drive with minimal Miller effect.
The MOSFET is rated for 650 V VDS with ±30 V VGS tolerance and features an avalanche-energy-rated structure (EAS = 367 mJ), enabling robustness in inductive switching circuits without external snubbers. Thermal design leverages the D2PAK's low RthJC (0.5 °C/W) for high-power density layouts in server PSUs and PV inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus designs with 30 % voltage margin for transient spikes in industrial SMPS |
| RDS(on) max @ 10 V | 0.18 Ω - enables <1.9 W conduction loss at 11 A continuous drain current (TC = 100 °C) |
| Qg typ | 71 nC - reduces gate drive power and allows use of lower-cost drivers in 100–300 kHz resonant converters |
| trr | 160 ns - minimizes body diode reverse recovery loss and dV/dt-induced shoot-through risk in phase-shifted full-bridge |
| EAS | 367 mJ - withstands unclamped inductive switching events without failure in welder or battery charger H-bridges |
| RthJC | 0.5 °C/W - permits >150 W power dissipation with standard heatsink mounting in compact D2PAK footprint |
| Coss | 105 pF - contributes to low capacitive turn-off loss and stable operation in LCC tank networks |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant outline per document 91364. Mounting requires solder paste stencil aperture matching Vishay's recommended minimum pads (10.67 mm × 9.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | High-impedance control terminal requiring <71 nC total charge for full enhancement; sensitive to ESD (±30 V absolute max) |
| D | Drain | Main high-side power terminal; electrically connected to exposed thermal pad - must be tied to system ground or HV rail per layout |
| S | Source | Power return path and gate reference node; used for current sensing in low-side configurations or as Kelvin source in precision gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode (E-series) | Reduces Qrr by >50 % vs. standard 650 V MOSFETs, cutting diode recovery loss in ZVS topologies |
| Low RDS(on) × Qg FOM | 10.6 Ω·nC - balances conduction and switching loss for optimal efficiency across 100–500 kHz operation |
| Avalanche-rated (UIS) | 367 mJ single-pulse energy rating ensures reliability during startup, overload, or fault conditions without derating |
| Ultra-low Crss | 4 pF - suppresses Miller-induced false turn-on in high-dV/dt environments (e.g., 3-level inverters) |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization per doc 99912 |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW phase-shifted full-bridge DC/DC converter for 48 V telecom rectifier. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switch operating at 100–200 kHz with ZVS enabled by fast body diode recovery. Use Value: 160 ns trr and 1.2 μC Qrr reduce dead-time loss and improve light-load efficiency by 1.2 % over standard 650 V MOSFETs. | Use Scenario: DC-link switching stage in string-level 5 kW transformerless PV inverter using 3-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg N-channel switch handling 600 V DC bus with bidirectional current flow during reactive power control. Use Value: 0.5 °C/W RthJC enables 21 A continuous current at 100 °C case temperature without forced air, reducing heatsink volume by 35 %. |
| Industrial Welder | HID Lighting Ballast |
Use Scenario: Inverter leg in IGBT-replacement 12 kW inverter-based arc welder with 20 kHz PWM modulation. IC Role / Device Role / Timing Role: Hard-switched main switch subjected to repetitive unclamped inductive energy during short-circuit events. Use Value: 367 mJ EAS rating eliminates need for external clamping circuits, simplifying gate driver isolation and improving MTBF. | Use Scenario: Resonant half-bridge switch in 400 W electronic HID ballast driving 250 V AC lamp arc. IC Role / Device Role / Timing Role: High-frequency (70–120 kHz) switching element requiring low Coss and stable VGS(th) over temperature. Use Value: 0.67 V/°C VDS temperature coefficient and 2–4 V VGS(th) range ensure predictable turn-on timing across -40 to +125 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20N65M5 | 650 V, 20 A, RDS(on) = 0.22 Ω, Qg = 52 nC, trr = 220 ns - higher RDS(on), lower Qg, slower diode | Better suited for lower-current, higher-frequency flyback or PFC stages where diode speed is less critical | Prefer SIHB21N65EF-GE3 when body diode performance dominates efficiency (e.g., phase-shifted bridge) |
| IXFH20N65X2 | 650 V, 20 A, RDS(on) = 0.205 Ω, Qg = 54 nC, trr = 190 ns - higher RDS(on), moderate Qrr, no UIS rating | Targeted at cost-sensitive industrial motor drives where avalanche ruggedness is not required | Select SIHB21N65EF-GE3 for designs needing guaranteed avalanche capability and faster diode recovery |
Compared with STW20N65M5 and IXFH20N65X2, SIHB21N65EF-GE3 delivers superior body diode performance (160 ns trr vs. ≥190 ns) and proven avalanche energy rating (367 mJ), making it the preferred choice for ZVS resonant converters and fault-prone inductive loads where diode recovery and ruggedness are design-critical.
Availability
SIHB21N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial welding systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHB21N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIHB21N65EF-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency resonant and soft-switching power conversion in telecom, renewable energy, and industrial equipment.
FAQ
What is the maximum continuous drain current rating for SIHB21N65EF-GE3 at 100 °C case temperature?
The SIHB21N65EF-GE3 has a continuous drain current rating of 13 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (0.5 °C/W) and safe operating area limits - actual usable current depends on PCB copper area, heatsink interface, and ambient airflow. The SIHB21N65EF-GE3 maintains 21 A rating only at TC = 25 °C.
Does SIHB21N65EF-GE3 support gate drive with 5 V logic-level signals?
No, SIHB21N65EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, but full enhancement requires VGS = 10 V to achieve the specified RDS(on) of 0.15 Ω. Driving with 5 V results in significantly higher on-resistance (>0.5 Ω), excessive conduction loss, and potential thermal runaway. The SIHB21N65EF-GE3 must be driven with a 10–15 V gate supply referenced to source.
How does the fast body diode in SIHB21N65EF-GE3 improve performance in phase-shifted bridge topologies?
The fast body diode in SIHB21N65EF-GE3 reduces reverse recovery time (trr = 160 ns) and charge (Qrr = 1.2 μC), minimizing voltage overshoot and circulating current during ZVS transitions. This directly lowers switching loss, improves efficiency at light load, and reduces EMI generation in phase-shifted bridge converters. The SIHB21N65EF-GE3's E-series diode enables tighter dead-time control without shoot-through risk.
Is SIHB21N65EF-GE3 suitable for use in solar microinverters?
Yes, SIHB21N65EF-GE3 is well-suited for solar microinverters operating in 3-level inverter or interleaved flyback topologies. Its 650 V rating accommodates 600 V DC input with margin, low Qg enables efficient high-frequency switching, and avalanche rating supports fault transients. The SIHB21N65EF-GE3's thermal performance (RthJC = 0.5 °C/W) also supports compact, fanless microinverter designs up to 350 W per channel.
What is the recommended gate resistor value for SIHB21N65EF-GE3 in a 200 kHz phase-shifted bridge application?
For 200 kHz operation in a phase-shifted bridge, a gate resistor of 9.1 Ω is validated per the datasheet's switching time test conditions (td(on) = 22 ns typ). This value balances switching speed (to minimize overlap loss) and gate ringing suppression. Lower values (<5 Ω) increase dI/dt stress and EMI; higher values (>15 Ω) extend switching times and raise losses. The SIHB21N65EF-GE3's low Qg (71 nC) allows effective control with this resistor without excessive driver power demand.
SIHB21N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2322 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB21N65EF-GE3 FAQ
1.How can I place an order for SIHB21N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB21N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB21N65EF-GE3 reliable?
The price and inventory of SIHB21N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB21N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB21N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB21N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB21N65EF-GE3?
SIHB21N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB21N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB21N65EF-GE3?
For technical support, including SIHB21N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB21N65EF-GE3 requirements.
6.How does Aetrix verify that SIHB21N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB21N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB21N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB21N65EF-GE3?
All SIHB21N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB21N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB21N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHB21N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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