Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB21N80AE-GE3

Name: SIHB21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB21N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHB21N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB21N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 17.4A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:905

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHB21N80AE-GE3 from Vishay Siliconix is an 800 V, 17.4 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.205 Ω @ V_GS = 10 V, Q_g = 48 nC (typ), and avalanche-rated (E_AS = 127 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB21N80AE-GE3 datasheet, SIHB21N80AE-GE3 pinout, SIHB21N80AE-GE3 application, or SIHB21N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, 0.205 Ω on-resistance at 10 V gate drive, 72 nC max total gate charge, Co(er) = 43 pF for reduced switching loss, and D2PAK thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for fast switching with controlled dv/dt (70 V/ns at T_J = 125 °C) and robust unclamped inductive switching capability. Its low C_oss(er) of 43 pF and C_iss of 1388 pF support high-frequency operation in hard-switched topologies.

The integrated body diode exhibits t_rr = 400–800 ns and Q_rr = 5–10 μC under defined conditions (I_F = 11 A, di/dt = 100 A/μs), enabling use in synchronous rectification and bidirectional energy transfer circuits where diode recovery behavior is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and 380 V telecom rectifier applications without derating
R_DS(on) typ @ 10 V	0.205 Ω - enables <1.5 W conduction loss at 11 A continuous drain current (T_C = 100 °C)
Q_g max	72 nC - determines gate driver power requirement and switching speed in 100–300 kHz SMPS designs
E_AS	127 mJ - ensures reliable operation under transient overcurrent events in inductive loads like motor drives and welders
R_thJC	0.7 °C/W - allows >150 W power dissipation with modest heatsinking, supporting high-power density board layouts
C_oss(er)	43 pF - reduces turn-off energy loss and improves efficiency in high-frequency hard-switched converters
t_rr	400–800 ns - defines minimum dead-time requirements when used in half-bridge configurations with body diode commutation

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration: Gate (G), Drain (D), Source (S). Thermal pad must be soldered to PCB copper area for optimal R_thJC performance.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with standard PWM controllers
D	Drain (high-side switch node)	Connected to internal thermal pad; carries full load current and withstands 800 V transients; requires clearance per IPC-2221
S	Source (power return path)	Reference node for gate drive; ties to low-side switch source or ground plane; carries return current and body diode forward current

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	14.7 Ω·nC - balances conduction and switching loss for optimal efficiency across 100–500 kHz operating range
Avalanche energy rated (UIS)	127 mJ single-pulse - eliminates need for external snubbers in inductive switching circuits like PFC boost chokes
Reduced C_oss(er)	43 pF - cuts turn-off loss by ~30% vs. legacy 800 V MOSFETs with comparable R_DS(on)
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709B - suitable for industrial and telecom equipment with strict environmental compliance
High dv/dt immunity	70 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise environments such as welding inverters and solar PV string inverters

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100–200 kHz in 380 V DC output telecom rectifiers with active PFC. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost topology; handles 11 A RMS input current. Use Value: Low R_DS(on) minimizes conduction loss at full load; low Q_g enables efficient gate driving with minimal driver IC heating.	Use Scenario: Primary-side switch in 48 V output, 3 kW telecom rectifier with dual-phase interleaved PFC. IC Role / Device Role / Timing Role: Main switching transistor in each PFC phase; operates with 640 V V_DS stress during switching transitions. Use Value: 800 V rating provides 20% margin over 640 V peak; E_AS rating ensures reliability during line surges and startup transients.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV array voltage to 400 V DC link. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to repetitive UIS stress during ZVS transitions. Use Value: Low C_oss(er) enables soft switching at higher frequencies; avalanche rating protects against transformer leakage inductance spikes.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW industrial motor drive with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 10 kHz PWM inverter; conducts reverse current via body diode during freewheeling. Use Value: Body diode t_rr and Q_rr values allow predictable commutation; R_thJC = 0.7 °C/W supports compact heatsink integration.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100–200 kHz in 380 V DC output telecom rectifiers with active PFC.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost topology; handles 11 A RMS input current.

Use Value: Low R_DS(on) minimizes conduction loss at full load; low Q_g enables efficient gate driving with minimal driver IC heating.

Use Scenario: Primary-side switch in 48 V output, 3 kW telecom rectifier with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Main switching transistor in each PFC phase; operates with 640 V V_DS stress during switching transitions.

Use Value: 800 V rating provides 20% margin over 640 V peak; E_AS rating ensures reliability during line surges and startup transients.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV array voltage to 400 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to repetitive UIS stress during ZVS transitions.

Use Value: Low C_oss(er) enables soft switching at higher frequencies; avalanche rating protects against transformer leakage inductance spikes.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW industrial motor drive with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 10 kHz PWM inverter; conducts reverse current via body diode during freewheeling.

Use Value: Body diode t_rr and Q_rr values allow predictable commutation; R_thJC = 0.7 °C/W supports compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30N80K5	800 V, R_DS(on) = 0.22 Ω @ 10 V, Q_g = 65 nC, D²PAK package	Higher R_DS(on) increases conduction loss by ~7% at 11 A; lower Q_g yields faster switching but less gate drive margin	Preferred where gate drive strength is limited and conduction loss is secondary to switching loss
IXTH30N80L	800 V, R_DS(on) = 0.24 Ω @ 10 V, Q_g = 85 nC, TO-247 package	Larger TO-247 package offers better thermal spread but requires PCB layout change; higher Q_g demands stronger gate driver	Selected when higher power derating or manual assembly is required; not drop-in compatible with D2PAK footprint

Compared with STW30N80K5 and IXTH30N80L, SIHB21N80AE-GE3 offers the lowest R_DS(on) × Q_g FOM among 800 V D2PAK MOSFETs, delivering superior efficiency in space-constrained telecom and server power modules where thermal resistance and gate drive simplicity are critical.

Availability

SIHB21N80AE-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHB21N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHB21N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered specifically for high-efficiency, high-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHB21N80AE-GE3 at 100 °C case temperature?

The SIHB21N80AE-GE3 has a continuous drain current rating of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation under real-world heatsink conditions and must be validated with actual board-level thermal design. The SIHB21N80AE-GE3 achieves this while maintaining R_DS(on) ≤ 0.235 Ω across temperature.

Does SIHB21N80AE-GE3 support logic-level gate drive?

No, SIHB21N80AE-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, SIHB21N80AE-GE3 requires a minimum 10 V gate drive; 5 V logic signals will not fully turn on the device and may cause excessive heating.

What is the significance of the "-GE3" suffix in SIHB21N80AE-GE3?

The "-GE3" suffix indicates that SIHB21N80AE-GE3 is packaged in tape-and-reel format with lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU and Vishay's green policy. It also denotes that the device meets JEDEC moisture sensitivity level (MSL) 1 requirements for unlimited floor life when sealed.

Can SIHB21N80AE-GE3 replace older 800 V MOSFETs like IRFP460 in existing designs?

SIHB21N80AE-GE3 is not a direct pin-compatible replacement for IRFP460 due to different packages (D2PAK vs. TO-247) and differing gate charge profiles. While both are 800 V devices, SIHB21N80AE-GE3 offers lower R_DS(on) and Q_g, but requires PCB layout revision and gate driver revalidation. Use of SIHB21N80AE-GE3 in legacy IRFP460 designs necessitates full electrical and thermal requalification.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHB21N80AE-GE3?

The body diode of SIHB21N80AE-GE3 has a reverse recovery charge (Q_rr) of 5–10 μC, measured at T_J = 25 °C, I_F = 11 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts commutation loss in half-bridge and synchronous rectifier applications, and SIHB21N80AE-GE3's Q_rr is optimized for reduced switching loss compared to standard high-voltage MOSFETs.

SIHB21N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1388 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB21N80AE-GE3 FAQ

1.How can I place an order for SIHB21N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB21N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB21N80AE-GE3 reliable?

The price and inventory of SIHB21N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB21N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB21N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB21N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB21N80AE-GE3?

SIHB21N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB21N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB21N80AE-GE3?

For technical support, including SIHB21N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB21N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB21N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB21N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB21N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB21N80AE-GE3?

All SIHB21N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB21N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB21N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB21N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …