Vishay Siliconix SIHB22N60AE-GE3

Overview

SIHB22N60AE-GE3 from Vishay Siliconix is a 600 V, 20 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.156 Ω @ V_GS = 10 V, Q_g = 48 nC (typ), and E_AS = 204 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHB22N60AE-GE3 datasheet, SIHB22N60AE-GE3 pinout, SIHB22N60AE-GE3 application, or SIHB22N60AE-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, ultra-low gate charge, and thermal performance with R_thJC = 0.7 °C/W - critical for high-density, high-reliability power conversion designs.

Technical Context

This device employs planar stripe silicon technology to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility. The integrated body diode supports synchronous rectification and inductive load commutation.

The MOSFET is characterized for operation up to T_J = 150 °C with a positive V_DS temperature coefficient (0.72 V/°C), supporting current sharing in paralleled configurations. Its dV/dt rating of 70 V/ns at T_J = 125 °C enables stable operation in fast-switching topologies like LLC resonant converters.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20NM60ND and IXFH20N60P, SIHB22N60AE-GE3 delivers superior conduction efficiency and integrated avalanche ruggedness in a smaller D2PAK footprint - making it optimal for space-constrained, high-efficiency 600 V power stages where reliability under transient stress is mandatory.

Availability

SIHB22N60AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHB22N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line - including SIHB22N60AE-GE3 - is engineered for high-frequency, high-efficiency switch-mode power conversion in demanding industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHB22N60AE-GE3 at 100 °C case temperature?

The SIHB22N60AE-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its R_thJC = 0.7 °C/W thermal resistance. At T_C = 25 °C, the rating increases to 20 A. Engineers must verify heatsink design to maintain case temperature within this range for sustained operation of SIHB22N60AE-GE3.

Does SIHB22N60AE-GE3 have an avalanche energy rating, and what is its value?

Yes, SIHB22N60AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) energy of 204 mJ, tested per JEDEC standard JESD24-1. This rating applies under conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A. This ruggedness makes SIHB22N60AE-GE3 suitable for inductive load switching without external snubbers, enhancing reliability in motor drives and welding equipment.

What is the typical gate charge (Qg) of SIHB22N60AE-GE3, and how does it affect switching performance?

The typical total gate charge (Q_g) of SIHB22N60AE-GE3 is 48 nC at V_GS = 10 V, with Q_gs = 12 nC and Q_gd = 25 nC. This low Q_g reduces gate driver power requirements and shortens switching transitions - enabling efficient operation up to 500 kHz in hard-switched topologies. For example, driving SIHB22N60AE-GE3 at 300 kHz with a 10 V gate swing requires only ~1.44 mW of average gate power, minimizing driver thermal load and system losses.

Is SIHB22N60AE-GE3 lead (Pb)-free and halogen-free, and which compliance standards does it meet?

Yes, SIHB22N60AE-GE3 is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's internal Green Standard (document #99912). The "-GE3" suffix explicitly denotes this compliance. It also meets JEDEC JS-001 ESD classification (HBM ≥ 2 kV) and is qualified for industrial temperature range (-55 °C to +150 °C). These attributes make SIHB22N60AE-GE3 suitable for environmentally regulated markets and long-life industrial deployments.

What is the reverse recovery time (t_rr) of the body diode in SIHB22N60AE-GE3, and why does it matter?

The body diode reverse recovery time (t_rr) of SIHB22N60AE-GE3 is 319 ns (typ) at T_J = 25 °C, I_F = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts switching losses and EMI in synchronous rectification and freewheeling applications. A shorter t_rr reduces diode tail current and associated voltage overshoot, improving efficiency and reliability in PFC and LLC converters where the body diode conducts during dead-time intervals - a key advantage of SIHB22N60AE-GE3 over slower alternatives.