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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60AEL-GE3

Name: SIHB22N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 21A D2PAK

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Product details

Overview

SIHB22N60AEL-GE3 from Vishay Siliconix is a 600 V, 22 A, N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features low R_DS(on) of 0.19 Ω at V_GS = 10 V, 100% avalanche-rated capability, and ultra-low gate charge (Q_g = 42 nC) to minimize switching losses.

For engineers reviewing the SIHB22N60AEL-GE3 datasheet, SIHB22N60AEL-GE3 pinout, SIHB22N60AEL-GE3 application, or SIHB22N60AEL-GE3 equivalent, key selection criteria include its 600 V blocking voltage, 22 A continuous drain current at T_C = 100 °C, 0.19 Ω R_DS(on), 42 nC total gate charge, and DPAK thermal performance with R_θJC = 1.2 °C/W - critical for high-efficiency, thermally constrained power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and deep-trench gate structure to achieve balanced conduction and switching performance. Its 600 V V_DSS rating supports universal-input AC/DC front-ends, while the 100% UIS-tested avalanche energy (E_AS = 275 mJ) ensures robustness against inductive turn-off transients without external snubbers.

The device uses a single-channel, surface-mount DPAK package with isolated drain tab, enabling direct heatsinking to PCB copper or external metal. Gate threshold voltage (V_GS(th)) is tightly specified at 2.5–4.5 V, supporting standard 10 V gate drivers while maintaining noise immunity in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports 400 V DC bus with ≥50% margin for surge and ripple in offline converters.
I_D (continuous, T_C = 100 °C)	22 A - Enables 300–500 W output power in compact TO-252-based SMPS without forced air cooling.
R_DS(on) (max, V_GS = 10 V)	0.19 Ω - Limits conduction loss to ≤950 mW at 22 A, reducing thermal stress on PCB copper.
Q_g (total gate charge)	42 nC - Allows fast switching (t_on/t_off < 30 ns typical) with moderate 1–2 A gate driver ICs.
E_AS (single-pulse avalanche energy)	275 mJ - Withstands worst-case inductive turn-off events in PFC and motor drive half-bridges without failure.
R_θJC	1.2 °C/W - Enables junction-to-case temperature rise of only 26.4 °C at 22 A, simplifying thermal design.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; lead-free and halogen-free per RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to ground or low-side reference; carries full load current with minimal parasitic inductance.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <1 µA bias; driven by logic-level or dedicated gate driver ICs.
Pin 3 (Drain)	Main high-voltage power terminal	Exposed metal tab on underside - must be soldered to large copper pour or heatsink for thermal management.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees rugged operation under unclamped inductive switching without derating or external protection.
Ultra-low Q_g (42 nC)	Reduces gate drive power loss and enables higher PWM frequencies (>100 kHz) in PFC and LLC resonant converters.
Low R_DS(on) × Q_g figure-of-merit (7.98 Ω·nC)	Optimizes trade-off between conduction and switching losses for high-efficiency 300–600 W systems.
Enhancement-mode operation	Ensures normally-off behavior - critical for safety-critical applications like industrial power supplies and solar inverters.
RoHS-compliant, lead-free termination	Supports automated reflow assembly and meets global environmental compliance requirements without performance compromise.

Applications

AC/DC Power Supplies	Power Factor Correction (PFC)
Use Scenario: Primary-side switch in 350–500 W universal-input offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to transformer primary. Use Value: 600 V rating accommodates 385 V DC bus plus 100 V surge; 0.19 Ω R_DS(on) keeps conduction loss below 1 W at full load.	Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC stage for LED drivers and industrial SMPS. IC Role / Device Role / Timing Role: Fast-switching power transistor shaping input current waveform to match sinusoidal voltage. Use Value: 42 nC Q_g enables efficient 65–100 kHz operation with minimal gate drive loss and reduced EMI filter size.
Solar Microinverters	Industrial Motor Drives
Use Scenario: DC-link switching element in half-bridge topology converting PV panel DC to grid-synchronized AC. IC Role / Device Role / Timing Role: High-reliability power switch handling bidirectional current during H-bridge commutation. Use Value: 275 mJ E_AS withstands reverse-recovery spikes from body diode conduction during dead-time transitions.	Use Scenario: Inverter leg switch in 0.5–2 kW variable-frequency drives for pumps, fans, and conveyors. IC Role / Device Role / Timing Role: Main power semiconductor delivering controlled three-phase AC output via PWM gating. Use Value: DPAK package allows direct mounting to aluminum heatsink; R_θJC = 1.2 °C/W maintains safe junction temperature at 22 A RMS.

AC/DC Power Supplies

Power Factor Correction (PFC)

Use Scenario: Primary-side switch in 350–500 W universal-input offline flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to transformer primary.

Use Value: 600 V rating accommodates 385 V DC bus plus 100 V surge; 0.19 Ω R_DS(on) keeps conduction loss below 1 W at full load.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC stage for LED drivers and industrial SMPS.

IC Role / Device Role / Timing Role: Fast-switching power transistor shaping input current waveform to match sinusoidal voltage.

Use Value: 42 nC Q_g enables efficient 65–100 kHz operation with minimal gate drive loss and reduced EMI filter size.

Solar Microinverters

Industrial Motor Drives

Use Scenario: DC-link switching element in half-bridge topology converting PV panel DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-reliability power switch handling bidirectional current during H-bridge commutation.

Use Value: 275 mJ E_AS withstands reverse-recovery spikes from body diode conduction during dead-time transitions.

Use Scenario: Inverter leg switch in 0.5–2 kW variable-frequency drives for pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Main power semiconductor delivering controlled three-phase AC output via PWM gating.

Use Value: DPAK package allows direct mounting to aluminum heatsink; R_θJC = 1.2 °C/W maintains safe junction temperature at 22 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.20 Ω (slightly higher); Q_g = 45 nC; D²PAK package	Larger footprint and higher R_θJC (1.5 °C/W) limits power density in space-constrained designs	Preferred where board layout allows larger package and marginal R_DS(on) increase is acceptable
IXFH22N60P	R_DS(on) = 0.22 Ω; Q_g = 58 nC; TO-247 package	Higher switching loss and larger through-hole footprint; better suited for >1 kW discrete heatsinked systems	Chosen when higher peak current handling and legacy TO-247 mechanical compatibility are required

Compared with STP22N60M2 and IXFH22N60P, the SIHB22N60AEL-GE3 delivers superior power density via DPAK thermal performance and lowest R_DS(on) × Q_g FoM, making it optimal for compact, high-efficiency 300–600 W industrial and renewable energy converters.

Availability

SIHB22N60AEL-GE3 is available at Aetrix Electronics and suitable for AC/DC power supplies, power factor correction circuits, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHB22N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management, automotive, and industrial applications.

The SIHB22N60AEL-GE3 belongs to Vishay's "E Series" high-voltage Power MOSFET family, engineered specifically for efficiency-critical offline power conversion where low R_DS(on), fast switching, and rugged avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHB22N60AEL-GE3 at 100 °C case temperature?

The SIHB22N60AEL-GE3 is rated for 22 A continuous drain current at T_C = 100 °C, verified per JEDEC JESD47 testing. This rating assumes proper PCB copper area for heat dissipation and accounts for derating above 25 °C ambient. The device maintains this current capability without exceeding its 150 °C maximum junction temperature under steady-state conditions.

Does SIHB22N60AEL-GE3 support logic-level gate drive?

No, the SIHB22N60AEL-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.5–4.5 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified R_DS(on) of 0.19 Ω. Driving SIHB22N60AEL-GE3 with only 5 V may result in excessive conduction loss and thermal runaway; a 10–15 V gate driver is recommended.

What is the avalanche energy rating of SIHB22N60AEL-GE3, and how is it tested?

The SIHB22N60AEL-GE3 is 100% tested for single-pulse avalanche energy (E_AS) at 275 mJ, per JEDEC JESD24-11. Testing applies a defined inductive load with I_D = 11 A and V_DD = 400 V, ensuring each unit survives worst-case unclamped inductive switching without parameter shift or failure - critical for reliability in PFC and motor control.

Can SIHB22N60AEL-GE3 be used in synchronous rectification topologies?

No, the SIHB22N60AEL-GE3 is not optimized for synchronous rectification. Its body diode exhibits relatively high forward voltage (V_SD ≈ 1.5 V) and slow reverse recovery (t_rr ≈ 250 ns), increasing conduction and switching losses in SR configurations. For synchronous rectification, Vishay recommends dedicated low-V_F, fast-recovery MOSFETs such as the SiHFR series.

What is the thermal resistance from junction to case (R_θJC) for SIHB22N60AEL-GE3, and how should it be applied in layout?

The SIHB22N60AEL-GE3 has an R_θJC of 1.2 °C/W, measured from junction to the exposed drain pad on the DPAK package underside. To realize this value, the drain pad must be soldered to ≥250 mm² of 2-oz copper with ≥4 thermal vias (0.3 mm diameter) connecting to inner or backside ground planes. Insufficient copper area will degrade thermal performance significantly.

SIHB22N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1757 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60AEL-GE3 FAQ

1.How can I place an order for SIHB22N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60AEL-GE3 reliable?

The price and inventory of SIHB22N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60AEL-GE3?

SIHB22N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60AEL-GE3?

For technical support, including SIHB22N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHB22N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60AEL-GE3?

All SIHB22N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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