Vishay Siliconix SIHB22N60E-E3

Overview

SIHB22N60E-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in server/telecom SMPS and PFC stages. It delivers R_DS(on) = 0.18 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated E_AS = 367 mJ - enabling efficient hard-switched topologies with robust unclamped inductive turn-off capability.

For engineers reviewing the SIHB22N60E-E3 datasheet, SIHB22N60E-E3 pinout, SIHB22N60E-E3 application, or SIHB22N60E-E3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced drive loss, 0.55 °C/W R_thJC, and D2PAK thermal performance in high-power density converters.

Technical Context

This device employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ~15.5 Ω·nC. Its dynamic parameters - C_iss = 1920 pF, C_oss = 90 pF, C_rss = 6 pF - support fast switching while maintaining voltage stability during dV/dt transients up to 70 V/ns at T_J = 125 °C.

The integrated body diode exhibits t_rr = 344 ns and Q_rr = 5.3 μC at I_F = 11 A, dI/dt = 100 A/μs, making it suitable for synchronous rectification and freewheeling in continuous conduction mode (CCM) PFC. The device is rated for repetitive UIS events and operates across -55 °C to +150 °C junction temperature range.

Key Specifications

Pinout & Package

D2PAK (TO-263) thermally enhanced surface-mount package with isolated drain tab (pin 2), standard 3-pin configuration, and JEDEC-compliant footprint. Thermal pad soldered to PCB plane for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW22NM60ND and IPP60R190C7, SIHB22N60E-E3 offers superior avalanche ruggedness and surface-mount thermal performance in D2PAK, making it optimal for space-constrained, high-reliability 600 V hard-switched applications where unclamped inductive energy must be absorbed internally.

Availability

SIHB22N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHB22N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHB22N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switching in enterprise and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHB22N60E-E3 at 100 °C case temperature?

The SIHB22N60E-E3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within its 0.55 °C/W R_thJC thermal resistance. At T_C = 25 °C, the rating increases to 21 A, and pulsed current reaches 56 A. Engineers must verify PCB copper area and heatsinking to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHB22N60E-E3 have an avalanche-rated specification, and how is it tested?

Yes, SIHB22N60E-E3 is fully avalanche-rated with E_AS = 367 mJ (single-pulse, non-repetitive). Per Vishay test condition b, this is measured at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. The rating confirms robustness against inductive turn-off stress in PFC and SMPS boost stages without external protection. Repetitive avalanche is not guaranteed per datasheet note a.

What is the gate threshold voltage range for SIHB22N60E-E3, and how does it affect drive requirements?

The SIHB22N60E-E3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA, confirming standard-level (not logic-level) gate drive compatibility. To ensure full enhancement and minimize R_DS(on), a minimum V_GS of 10 V is required per specifications. Gate drive circuits must supply ≥10 V with sufficient peak current to charge 86 nC Q_g rapidly - typical drivers like UCC27531 or MIC442x are recommended for sub-50 ns switching.

How does the body diode performance of SIHB22N60E-E3 compare to fast recovery diodes in PFC applications?

The SIHB22N60E-E3 body diode delivers t_rr = 344 ns and Q_rr = 5.3 μC at I_F = 11 A, dI/dt = 100 A/μs, which is competitive with discrete ultrafast diodes in CCM PFC. Its soft recovery characteristic reduces EMI and voltage overshoot compared to abrupt-recovery diodes. However, for critical high-dI/dt or zero-crossing applications, a dedicated SiC Schottky may still be preferred - the SIHB22N60E-E3 body diode is best suited for moderate-frequency freewheeling where integrated simplicity outweighs marginal recovery optimization.

Is SIHB22N60E-E3 RoHS-compliant and halogen-free, and what does the "-E3" suffix indicate?

Yes, SIHB22N60E-E3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section. The "-E3" suffix denotes Vishay's standard green packaging: 100 % matte tin-plated leads, no lead, no brominated flame retardants, and compliance with JEDEC JS-001 and IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). This makes SIHB22N60E-E3 suitable for lead-free reflow assembly and environmentally regulated markets including EU RoHS and China RoHS.