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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60EF-GE3

Name: SIHB22N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 19A D2PAK

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Inventory:3,510

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Product details

Overview

SIHB22N60EF-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.158 Ω at V_GS = 10 V, Q_g = 48 nC (typ), and fast body diode with t_rr = 113 ns - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB22N60EF-GE3 datasheet, SIHB22N60EF-GE3 pinout, SIHB22N60EF-GE3 application, or SIHB22N60EF-GE3 equivalent, key selection criteria include its 144 mJ single-pulse avalanche energy rating, 70 V/ns dv/dt capability, low C_iss (1423 pF), and EF-series fast-recovery body diode performance under hard-switching conditions.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and epitaxial layer design to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ~7.6 Ω·nC. Its body diode exhibits controlled reverse recovery with Q_rr = 0.7 μC (typ) and I_RRM = 11 A, enabling reduced switching loss in continuous conduction mode (CCM) PFC.

The device supports gate drive with ±30 V V_GS rating and operates up to T_J = 150 °C. Thermal resistance R_thJC = 0.7 °C/W enables high-power density mounting on copper-clad PCBs or heatsinks, while its 600 V V_DS rating meets IEC/UL 62368-1 reinforced insulation requirements for primary-side switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified to ~565 V DC bus with 5% margin for surge and ripple
R_DS(on) (typ)	0.158 Ω at V_GS = 10 V, I_D = 11 A - delivers <1.9 W conduction loss at 11 A, enabling >98% PFC efficiency
Q_g (typ)	48 nC - reduces gate drive power and enables use of lower-cost 1-A peak gate drivers in 100–300 kHz designs
t_rr	113 ns (typ) at T_J = 25 °C - limits diode-induced voltage overshoot and EMI in hard-commutated totem-pole PFC
E_AS	144 mJ - withstands unclamped inductive switching events without failure, improving system robustness
C_iss	1423 pF - lowers Miller effect and improves noise immunity during high-dv/dt switching transitions
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤125 °C case-to-junction rise, supporting compact thermal design

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant footprint (8.38–9.65 mm × 9.65–10.67 mm × 4.06–4.83 mm height). Mounting requires solder paste stencil opening matching recommended minimum pads per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; 0.6 Ω typical gate input resistance minimizes ringing with standard 9.1 Ω series resistor
D (Drain)	High-voltage power terminal	Connected to thermal pad; carries full load current and must be routed over solid copper pour for thermal and EMI control
S (Source)	Power return and reference node	Serves as local ground for gate driver; low-inductance layout critical to avoid false turn-on from dV/dt coupling

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	~7.6 Ω·nC - balances conduction and switching losses for optimal efficiency across 65–300 kHz PFC operation
Fast body diode	t_rr = 113 ns, Q_rr = 0.7 μC - reduces diode recovery loss and associated snubber requirements in CCM boost converters
Avalanche-rated	E_AS = 144 mJ - eliminates need for external clamping in inductive load switching or startup fault conditions
High dv/dt immunity	70 V/ns (T_J = 125 °C) - suppresses parasitic turn-on in high-speed half-bridge configurations
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted PSUs. IC Role / Device Role / Timing Role: High-side switching element handling 400–480 V DC bus, switching at 100–250 kHz with synchronous rectification. Use Value: Low Q_g and fast body diode reduce dead-time losses and improve light-load efficiency by >1.2% versus standard 600 V MOSFETs.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–150 kHz. Use Value: 144 mJ E_AS rating ensures reliable operation during line surges and output short-circuit recovery without derating.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: High-voltage bridge leg switch in two-level or three-level NPC topologies, gated at 16–20 kHz. Use Value: 0.158 Ω R_DS(on) minimizes conduction loss at 15–20 A RMS, extending thermal margin in sealed outdoor enclosures.	Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 650 V class drives, used in 2-level voltage source inverters with 2–8 kHz PWM. Use Value: Fast body diode enables efficient regenerative braking without external freewheeling diodes, reducing BOM count and board area.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted PSUs.

IC Role / Device Role / Timing Role: High-side switching element handling 400–480 V DC bus, switching at 100–250 kHz with synchronous rectification.

Use Value: Low Q_g and fast body diode reduce dead-time losses and improve light-load efficiency by >1.2% versus standard 600 V MOSFETs.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–150 kHz.

Use Value: 144 mJ E_AS rating ensures reliable operation during line surges and output short-circuit recovery without derating.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in two-level or three-level NPC topologies, gated at 16–20 kHz.

Use Value: 0.158 Ω R_DS(on) minimizes conduction loss at 15–20 A RMS, extending thermal margin in sealed outdoor enclosures.

Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 650 V class drives, used in 2-level voltage source inverters with 2–8 kHz PWM.

Use Value: Fast body diode enables efficient regenerative braking without external freewheeling diodes, reducing BOM count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V, 17 A, R_DS(on) = 0.22 Ω, Q_g = 52 nC, no avalanche rating	Lacks UIS rating; requires external avalanche protection in inductive loads	Lower cost where surge immunity is managed externally and efficiency gain from lower R_DS(on) is non-critical
IPP60R099C7	600 V, 28 A, R_DS(on) = 0.099 Ω, Q_g = 62 nC, t_rr = 150 ns, no fast diode optimization	Higher current rating but slower diode recovery increases EMI and loss in PFC	Better for high-current, low-frequency motor drives; less suitable for high-frequency PFC due to higher Q_rr

Compared with STW20NK60Z and IPP60R099C7, SIHB22N60EF-GE3 uniquely combines 600 V rating, low R_DS(on) × Q_g, fast body diode, and rated avalanche energy - making it the preferred choice for space-constrained, high-efficiency PFC and telecom SMPS where reliability under transient stress is mandatory.

Availability

SIHB22N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for SIHB22N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix, a division of Vishay Intertechnology, designs and manufactures discrete semiconductors with emphasis on power efficiency, ruggedness, and reliability for industrial and computing applications.

The EF Series, including SIHB22N60EF-GE3, was developed specifically for high-frequency, high-efficiency switching in power factor correction and server/telecom SMPS - prioritizing low switching loss, fast body diode recovery, and avalanche robustness.

FAQ

What is the maximum continuous drain current rating for SIHB22N60EF-GE3 at 100 °C case temperature?

The SIHB22N60EF-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 19 A rating at T_C = 25 °C, based on a linear derating factor of 1.4 W/°C and R_thJC = 0.7 °C/W. Designers must ensure heatsinking maintains case temperature ≤100 °C for sustained 12 A operation.

Does SIHB22N60EF-GE3 have a fully characterized fast body diode, and what are its key recovery parameters?

Yes, SIHB22N60EF-GE3 features a fully characterized fast body diode with t_rr = 113 ns (typ), Q_rr = 0.7 μC (typ), and I_RRM = 11 A at T_J = 25 °C. These values are measured under standardized conditions (I_F = 11 A, di/dt = 100 A/μs, V_R = 400 V) and enable predictable recovery behavior in CCM PFC and synchronous rectification circuits - a core differentiator of the EF Series.

Can SIHB22N60EF-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHB22N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 144 mJ, tested per note b in the datasheet (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.2 A). This rating allows safe operation during transient overloads without external clamping, a key advantage over non-avalanche-rated 600 V MOSFETs like many standard Superjunction devices.

What is the gate threshold voltage range for SIHB22N60EF-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHB22N60EF-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and ensures robust turn-on margin above typical logic thresholds. It also indicates minimal risk of spurious turn-on at V_GS < 2.0 V, supporting reliable operation in noisy power environments.

Is SIHB22N60EF-GE3 lead (Pb)-free and halogen-free, and which compliance standard does it meet?

Yes, SIHB22N60EF-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. Vishay documents this under its material categorization system (see www.vishay.com/doc?99912), and the "-GE3" suffix explicitly denotes lead-free, halogen-free, and green-compliant packaging per Vishay's internal specification S19-0120-Rev. A.

SIHB22N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 182mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60EF-GE3 FAQ

1.How can I place an order for SIHB22N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60EF-GE3 reliable?

The price and inventory of SIHB22N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60EF-GE3?

SIHB22N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60EF-GE3?

For technical support, including SIHB22N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB22N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60EF-GE3?

All SIHB22N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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