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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60E-GE3

Name: SIHB22N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60E-GE3.pdf

Description:: MOSFET N-CH 600V 21A D2PAK

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Product details

Overview

SIHB22N60E-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.18 Ω max R_DS(on) at V_GS = 10 V, 86 nC total gate charge, and 367 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-DC converters.

For engineers reviewing the SIHB22N60E-GE3 datasheet, SIHB22N60E-GE3 pinout, SIHB22N60E-GE3 application, or SIHB22N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low Q_g/R_DS(on) figure-of-merit, avalanche ruggedness, thermal resistance of 0.55 °C/W (junction-to-case), and suitability for hard-switched 50–100 kHz power stages.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with minimized conduction and switching losses. Its gate threshold voltage (2–4 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility. The integral body diode supports freewheeling in bridge configurations with 344 ns reverse recovery time and 5.3 μC Q_rr.

The device operates within -55 to +150 °C junction temperature range and is rated for repetitive unclamped inductive switching (UIS) up to 367 mJ. Its dynamic parameters-including C_iss = 1920 pF, C_oss = 90 pF, and C_rss = 6 pF-are specified at V_DS = 100 V and f = 1 MHz, supporting accurate snubber and gate driver design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin in telecom and solar inverters
R_DS(on) max @ 25 °C	0.18 Ω - enables <1.8 W conduction loss at 11 A continuous drain current
Q_g max	86 nC - determines gate driver peak current requirement (~1.8 A for 47 Ω resistor, 20 ns rise)
E_AS	367 mJ - withstands unclamped inductive energy without failure in PFC boost choke applications
R_thJC	0.55 °C/W - allows 227 W power dissipation with ≤125 °C case-to-ambient delta under heatsink mounting
I_D continuous @ T_C = 100 °C	13 A - defines usable current limit in thermally constrained server PSU main switches
V_SD @ I_S = 11 A	1.2 V - sets forward conduction loss during synchronous rectification or body-diode conduction

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to pin 2 (Drain) and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Control electrode	Accepts 10 V logic-level gate drive; input capacitance C_iss = 1920 pF affects driver sizing
D (Pin 2 / Tab)	High-voltage power terminal	Connected to drain region and thermal pad; must be soldered to large copper pour for R_thJC = 0.55 °C/W
S (Pin 3)	Reference node	Source tie point for gate drive return and current sensing; carries full load current (21 A pulsed)

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.5 Ω·nC - reduces combined switching + conduction loss in 50–100 kHz hard-switched topologies
Avalanche-rated (UIS)	367 mJ single-pulse - eliminates need for external clamping in boost PFC and flyback primary switches
Ultra-low Q_gd/Q_g ratio	24/86 ≈ 28 % - improves Miller immunity and enables stable operation with moderate gate resistance
Low C_oss (90 pF)	Reduces turn-off energy loss (E_off ∝ C_oss × V_DS²) in high-frequency ZVS-limited designs
Body diode Q_rr = 5.3 μC	Enables predictable commutation in half-bridge LLC resonant converters without excessive voltage overshoot

Applications

Server & Telecom SMPS	Photovoltaic Inverters
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with 380 V DC bus and 75 kHz fixed-frequency hard switching. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to bulk capacitor via active clamp forward topology. Use Value: 600 V rating provides 100 V margin above 380 V bus; 0.18 Ω R_DS(on) limits conduction loss to <2.2 W at 11 A RMS; avalanche rating absorbs leakage inductance spikes.	Use Scenario: DC-DC boost stage in string-level PV inverter handling 600–1000 V DC input and delivering 800 V DC bus. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter operating at 40–60 kHz with phase-shift control. Use Value: 367 mJ E_AS sustains repeated inductive turn-off events; low Q_g enables efficient 10 V gate drive with minimal driver loss; TO-263 thermal pad supports 227 W dissipation on 4-layer board.
Industrial Motor Drives	LED Lighting Ballasts
Use Scenario: Inverter leg switch in 5 kW HVAC variable-frequency drive using 650 V DC link and space-vector PWM at 8 kHz. IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT/MOSFET hybrid inverter with regenerative braking capability. Use Value: Body diode V_SD = 1.2 V and t_rr = 344 ns enable controlled freewheeling during PWM dead-time; 13 A continuous rating at 100 °C case supports derated motor surge currents.	Use Scenario: High-side switch in 300 W fluorescent electronic ballast driving 4-lamp parallel configuration with 600 V open-circuit voltage. IC Role / Device Role / Timing Role: Resonant half-bridge switch controlling lamp ignition and steady-state regulation via frequency modulation. Use Value: 600 V V_DS withstands lamp open-circuit transients; low C_oss (90 pF) minimizes capacitive feedthrough during zero-voltage switching transitions; TO-263 package simplifies thermal management on compact ballast PCB.

Server & Telecom SMPS

Photovoltaic Inverters

Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with 380 V DC bus and 75 kHz fixed-frequency hard switching.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to bulk capacitor via active clamp forward topology.

Use Value: 600 V rating provides 100 V margin above 380 V bus; 0.18 Ω R_DS(on) limits conduction loss to <2.2 W at 11 A RMS; avalanche rating absorbs leakage inductance spikes.

Use Scenario: DC-DC boost stage in string-level PV inverter handling 600–1000 V DC input and delivering 800 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter operating at 40–60 kHz with phase-shift control.

Use Value: 367 mJ E_AS sustains repeated inductive turn-off events; low Q_g enables efficient 10 V gate drive with minimal driver loss; TO-263 thermal pad supports 227 W dissipation on 4-layer board.

Industrial Motor Drives

LED Lighting Ballasts

Use Scenario: Inverter leg switch in 5 kW HVAC variable-frequency drive using 650 V DC link and space-vector PWM at 8 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT/MOSFET hybrid inverter with regenerative braking capability.

Use Value: Body diode V_SD = 1.2 V and t_rr = 344 ns enable controlled freewheeling during PWM dead-time; 13 A continuous rating at 100 °C case supports derated motor surge currents.

Use Scenario: High-side switch in 300 W fluorescent electronic ballast driving 4-lamp parallel configuration with 600 V open-circuit voltage.

IC Role / Device Role / Timing Role: Resonant half-bridge switch controlling lamp ignition and steady-state regulation via frequency modulation.

Use Value: 600 V V_DS withstands lamp open-circuit transients; low C_oss (90 pF) minimizes capacitive feedthrough during zero-voltage switching transitions; TO-263 package simplifies thermal management on compact ballast PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60FD	600 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 95 nC, D²PAK package	Higher Q_g increases gate drive loss; slightly higher R_DS(on) raises conduction loss by ~5.5 %	Acceptable where gate drive capability exceeds 2 A peak and thermal margin permits 0.01 Ω higher on-resistance
IXFH22N60P	600 V, 22 A, R_DS(on) = 0.195 Ω, Q_g = 92 nC, TO-247 package	Larger TO-247 package requires more PCB area; higher R_thJC (0.75 °C/W) limits power density	Preferred only when through-hole mounting or higher surge current (IDM = 88 A) is required over surface-mount constraints

Compared with STP22NM60FD and IXFH22N60P, SIHB22N60E-GE3 offers the lowest Q_g/R_DS(on) FOM (15.5 Ω·nC), best thermal resistance (0.55 °C/W), and smallest footprint (D2PAK), making it optimal for space-constrained, high-efficiency 50–100 kHz power stages requiring repeatable avalanche robustness.

Availability

SIHB22N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHB22N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The E Series Power MOSFETs, including SIHB22N60E-GE3, are engineered for high-voltage switching in telecom, industrial, and renewable energy systems where low conduction loss, fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SIHB22N60E-GE3 at 100 °C case temperature?

The SIHB22N60E-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 21 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit when mounted on an adequately sized heatsink or PCB copper area.

Does SIHB22N60E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHB22N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 367 mJ, tested per JEDEC standard JESD24-1. This rating applies under conditions of V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. The SIHB22N60E-GE3 uses rugged silicon design to sustain this energy without parameter degradation.

What is the gate threshold voltage range for SIHB22N60E-GE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHB22N60E-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious turn-on from dv/dt coupling. The SIHB22N60E-GE3 is not a logic-level device and requires ≥8 V gate drive for full R_DS(on) specification compliance.

What package type is used for SIHB22N60E-GE3, and what are its thermal characteristics?

SIHB22N60E-GE3 uses the D2PAK (TO-263AB) surface-mount package with an exposed drain pad. Its maximum junction-to-case thermal resistance (R_thJC) is 0.55 °C/W, measured from junction to the drain tab. This low value enables high-power operation-up to 227 W at T_C = 25 °C-when the drain pad is soldered to ≥4 cm² of 2-oz copper with thermal vias, as recommended in Vishay AN826.

How does the body diode performance of SIHB22N60E-GE3 compare to standard recovery diodes in bridge applications?

The SIHB22N60E-GE3 features an integral body diode with V_SD = 1.2 V at I_S = 11 A and T_J = 25 °C, t_rr = 344 ns, and Q_rr = 5.3 μC. While slower than dedicated SiC Schottky diodes, this performance is sufficient for hard-switched PFC and motor drive freewheeling where soft recovery is not required. The SIHB22N60E-GE3 body diode is not optimized for synchronous rectification but supports robust bidirectional current flow in half-bridge configurations.

SIHB22N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60E-GE3 FAQ

1.How can I place an order for SIHB22N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60E-GE3 reliable?

The price and inventory of SIHB22N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60E-GE3?

SIHB22N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60E-GE3?

For technical support, including SIHB22N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60E-GE3 requirements.

6.How does Aetrix verify that SIHB22N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60E-GE3?

All SIHB22N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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