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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60EL-GE3

Name: SIHB22N60EL-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60EL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60EL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60EL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO263

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Product details

Overview

SIHB22N60EL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.171 Ω at V_GS = 10 V, Q_g = 37 nC (typ), and 286 mJ single-pulse avalanche energy. It serves as a high-voltage switching device in primary-side SMPS and PFC stages of server/telecom power supplies.

For engineers reviewing the SIHB22N60EL-GE3 datasheet, SIHB22N60EL-GE3 pinout, SIHB22N60EL-GE3 application, or SIHB22N60EL-GE3 equivalent, key selection criteria include its 600 V V_DS, low gate charge for hard-switched topologies, avalanche-rated ruggedness, and D2PAK thermal performance in high-power density designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with reduced R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures robust turn-on under standard 10 V gate drive while maintaining noise immunity.

The integrated body diode supports freewheeling in bridge configurations, with t_rr = 365 ns and Q_rr = 5.8 μC enabling moderate-frequency synchronous rectification or PFC operation. Thermal resistance R_thJC = 0.55 °C/W enables high continuous power dissipation when mounted on copper-clad PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with 50 % safety margin for telecom/server PFC and SMPS primary switches.
R_DS(on) max @ 25 °C	0.197 Ω - Limits conduction loss to ≤ 43 W at 11 A continuous drain current in thermally constrained layouts.
Q_g max	74 nC - Determines gate driver power requirement; enables <100 kHz hard-switched operation with ≤ 1 W driver loss.
E_AS	286 mJ - Withstands unclamped inductive switching events in motor drives or welder output stages without failure.
R_thJC	0.55 °C/W - Enables 227 W maximum power dissipation with ≤ 125 °C junction rise above 25 °C case temperature.
C_iss	1690 pF - Sets Miller capacitance-related turn-off delay; requires careful gate resistor selection to balance speed and ringing.
t_rr	365 ns - Defines minimum dead-time in half-bridge configurations to avoid shoot-through during body diode commutation.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal conduction. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
G	Control terminal	Receives gate drive signal; requires ≥10 V for full enhancement; input capacitance C_iss = 1690 pF affects driver sizing.
D	High-side power terminal	Connected to drain network (e.g., PFC boost inductor or SMPS transformer primary); electrically tied to exposed metal tab for heat sinking.
S	Reference and return path	Source node for gate drive reference; carries full load current; forms common node with driver ground in high-side configurations.

Key Features

Feature	Design Value
Reduced R_DS(on) × Q_g FOM	Enables higher efficiency in high-frequency switch-mode topologies by simultaneously lowering conduction and switching losses.
Avalanche energy rated (E_AS = 286 mJ)	Eliminates need for external snubbers in inductive load switching applications such as welding inverters and motor drives.
Low C_iss (1690 pF) and C_oss (95 pF)	Reduces capacitive loading on gate drivers and improves voltage transient response during fast dV/dt events (62 V/ns).
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard per doc# 99912.
Body diode with t_rr = 365 ns	Supports reliable freewheeling in non-synchronous rectified topologies without excessive reverse recovery loss or EMI.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW active clamp forward converter for data center PSU. IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–150 kHz with 400 V DC input. Use Value: Low Q_g reduces gate driver losses; 600 V rating accommodates 400 V bus with margin for line surges.	Use Scenario: Boost switch in 3 kW telecom rectifier with universal AC input and PFC stage. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch handling 11 A peak current. Use Value: R_DS(on) = 0.171 Ω minimizes conduction loss at high ambient temperatures; avalanche rating handles startup transients.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switch in two-level string inverter with 1000 V DC input. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage operating at 16–20 kHz. Use Value: 286 mJ E_AS withstands inductive kickback during fault conditions; D2PAK package provides stable thermal interface.	Use Scenario: Half-bridge switch in 15 kW induction heater resonant tank driver. IC Role / Device Role / Timing Role: Hard-switched 20–50 kHz power switch with repetitive 45 A pulsed current. Use Value: 0.55 °C/W R_thJC enables direct heatsink mounting; low C_oss reduces switching loss at high frequency.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW active clamp forward converter for data center PSU.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–150 kHz with 400 V DC input.

Use Value: Low Q_g reduces gate driver losses; 600 V rating accommodates 400 V bus with margin for line surges.

Use Scenario: Boost switch in 3 kW telecom rectifier with universal AC input and PFC stage.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch handling 11 A peak current.

Use Value: R_DS(on) = 0.171 Ω minimizes conduction loss at high ambient temperatures; avalanche rating handles startup transients.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switch in two-level string inverter with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage operating at 16–20 kHz.

Use Value: 286 mJ E_AS withstands inductive kickback during fault conditions; D2PAK package provides stable thermal interface.

Use Scenario: Half-bridge switch in 15 kW induction heater resonant tank driver.

IC Role / Device Role / Timing Role: Hard-switched 20–50 kHz power switch with repetitive 45 A pulsed current.

Use Value: 0.55 °C/W R_thJC enables direct heatsink mounting; low C_oss reduces switching loss at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	600 V, 22 A, R_DS(on) = 0.18 Ω, Q_g = 45 nC, D²PAK package	Higher Q_g increases gate drive loss; slightly lower avalanche rating (250 mJ)	Acceptable where gate drive capability exceeds 1 W and avalanche stress is limited.
IPP60R190C7	600 V, 21 A, R_DS(on) = 0.19 Ω, Q_g = 32 nC, TO-220FP package	TO-220FP has higher R_thJC (1.2 °C/W); no lead-free option in GE3 suffix	Preferred for cost-sensitive through-hole designs; not suitable for same thermal footprint as D2PAK.

Compared with STW22NM60ND and IPP60R190C7, the SIHB22N60EL-GE3 delivers superior R_DS(on) × Q_g trade-off and industry-leading avalanche ruggedness in a RoHS-compliant D2PAK package-making it optimal for high-reliability, high-power-density server and telecom SMPS designs.

Availability

SIHB22N60EL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for SIHB22N60EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The SIHB22N60EL-GE3 belongs to Vishay's EL Series Power MOSFET family, engineered for high-voltage switching in demanding industrial and communications infrastructure applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for SIHB22N60EL-GE3 at 100 °C case temperature?

The SIHB22N60EL-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. The SIHB22N60EL-GE3 must be mounted on a PCB with adequate copper area or heatsink to maintain this rating.

Does SIHB22N60EL-GE3 have avalanche capability, and how is it rated?

Yes, the SIHB22N60EL-GE3 is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 286 mJ, tested per JEDEC standard JESD24-1. This rating applies under defined conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.5 A. The SIHB22N60EL-GE3 can safely absorb inductive energy without failure in properly designed circuits.

What is the gate threshold voltage range for SIHB22N60EL-GE3, and why does it matter?

The SIHB22N60EL-GE3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while providing noise immunity against spurious turn-on from dv/dt coupling. The SIHB22N60EL-GE3 remains fully enhanced across its operating temperature range, supporting stable switching in high-noise environments.

How does the body diode performance of SIHB22N60EL-GE3 compare to standard rectifiers?

The SIHB22N60EL-GE3 features an integrated body diode with t_rr = 365 ns and Q_rr = 5.8 μC at T_J = 25 °C, making it suitable for freewheeling in non-synchronous topologies. While slower than dedicated ultrafast diodes, its parameters are optimized for controlled recovery in PFC and SMPS applications. The SIHB22N60EL-GE3 body diode avoids hard reverse recovery spikes that cause EMI in poorly damped circuits.

Is SIHB22N60EL-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHB22N60EL-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the Soldering Recommendations in the datasheet. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. The SIHB22N60EL-GE3 meets IPC/JEDEC J-STD-020 moisture sensitivity level MSL3 requirements.

SIHB22N60EL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 197mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60EL-GE3 FAQ

1.How can I place an order for SIHB22N60EL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60EL-GE3 reliable?

The price and inventory of SIHB22N60EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60EL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60EL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60EL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60EL-GE3?

SIHB22N60EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60EL-GE3?

For technical support, including SIHB22N60EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60EL-GE3 requirements.

6.How does Aetrix verify that SIHB22N60EL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60EL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60EL-GE3?

All SIHB22N60EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60EL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60EL-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60EL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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