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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60ET1-GE3

Name: SIHB22N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60ET1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60ET1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60ET1-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO263

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHB22N60ET1-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.18 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated UIS capability. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-link circuits.

For engineers reviewing the SIHB22N60ET1-GE3 datasheet, SIHB22N60ET1-GE3 pinout, SIHB22N60ET1-GE3 application, or SIHB22N60ET1-GE3 equivalent, key selection criteria include its 600 V V_DS, low gate charge for hard-switched topologies, robust body diode with t_rr = 344 ns, and thermal resistance R_thJC = 0.55 °C/W enabling high-power-density designs.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate structure minimizes Q_gd/Q_g ratio (24/86 nC), reducing Miller-induced switching instability in bridge configurations. The integral body diode supports synchronous rectification and unclamped inductive switching.

The MOSFET operates with V_GS(th) = 2–4 V and exhibits positive V_DS temperature coefficient (0.71 V/°C), enabling inherent current sharing in parallel configurations. Its C_iss = 1920 pF and C_oss = 90 pF support predictable snubber design and EMI control in 50–100 kHz PFC and 10–50 kHz inverter applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC input rectified to ~560 V DC bus with 10 % margin for surge and ringing.
R_DS(on) max	0.18 Ω at V_GS = 10 V, T_J = 25 °C - Enables <1.9 W conduction loss at 11 A continuous drain current.
Q_g max	86 nC - Determines gate driver power requirement (~1.7 mW per MHz at 10 V drive) in high-frequency SMPS.
E_AS	367 mJ - Withstands single-pulse inductive energy without failure in PFC boost choke or motor drive freewheeling.
t_rr	344 ns - Limits reverse recovery losses and dI/dt stress during commutation in hard-switched converters.
R_thJC	0.55 °C/W - Allows 227 W dissipation with ≤125 °C junction rise above 25 °C case, supporting heatsink-limited thermal design.
I_D cont.	21 A at T_C = 25 °C - Rated for continuous operation in TO-263 footprint with adequate copper area and airflow.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for thermal and electrical connection; 3-pin surface-mount outline compliant with JEDEC TO-263AB standard (Document 73397).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring 10 V drive for full enhancement; gate input resistance 0.3–1.2 Ω enables fast turn-on with low-R_g.
Pin 2 (D)	Drain	High-voltage power output node; electrically and thermally connected to backside metal tab - must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and gate reference; connects to PCB ground plane; body diode anode ties to source for freewheeling conduction.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.5 Ω·nC - Reduces combined switching + conduction loss trade-off, critical for >95 % efficiency PFC stages.
Avalanche-rated (UIS)	367 mJ single-pulse - Eliminates need for external clamping in inductive load switching, simplifying layout in welder and motor drives.
Ultra-low Q_gd	24 nC - Minimizes Miller plateau duration, improving noise immunity and enabling higher dV/dt tolerance (70 V/ns).
Enhanced body diode	t_rr = 344 ns, Q_rr = 5.3 μC - Enables reliable zero-voltage switching (ZVS) assist and reduces diode-related EMI in resonant topologies.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for industrial and telecom end-equipment.

Applications

Server & Telecom PSU	Photovoltaic Inverter DC Link
Use Scenario: Primary-side switch in 3.3 kW server front-end LLC resonant converter operating at 200–300 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus with synchronous rectification support via body diode. Use Value: Low Q_g and C_iss enable efficient high-frequency operation; R_thJC = 0.55 °C/W sustains thermal performance under sustained 18 A load.	Use Scenario: DC-link switching stage in string-level solar inverter converting 600–1000 V DC to 400 V AC. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge leg, subjected to repetitive 600 V blocking and 21 A conduction. Use Value: 600 V V_DS rating with 10 % margin ensures reliability across PV array voltage range; avalanche rating protects against lightning-induced transients.
Industrial Motor Drive	Induction Heating Inverter
Use Scenario: IGBT replacement in 7.5 kW VFD output stage driving 3-phase induction motor at 4 kHz PWM. IC Role / Device Role / Timing Role: Half-bridge high-side switch with integrated body diode conducting freewheeling current during dead-time. Use Value: Body diode t_rr = 344 ns and Q_rr = 5.3 μC minimize reverse recovery spikes, reducing EMI filter size and gate driver stress.	Use Scenario: Resonant tank switch in 15 kW solid-state induction heater operating at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched power switch subjected to high dI/dt (>100 A/μs) and repetitive UIS events during coil detuning. Use Value: 367 mJ E_AS rating withstands worst-case detuned operation; low C_oss = 90 pF maintains ZVS boundary across wide load range.

Server & Telecom PSU

Photovoltaic Inverter DC Link

Use Scenario: Primary-side switch in 3.3 kW server front-end LLC resonant converter operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus with synchronous rectification support via body diode.

Use Value: Low Q_g and C_iss enable efficient high-frequency operation; R_thJC = 0.55 °C/W sustains thermal performance under sustained 18 A load.

Use Scenario: DC-link switching stage in string-level solar inverter converting 600–1000 V DC to 400 V AC.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge leg, subjected to repetitive 600 V blocking and 21 A conduction.

Use Value: 600 V V_DS rating with 10 % margin ensures reliability across PV array voltage range; avalanche rating protects against lightning-induced transients.

Industrial Motor Drive

Induction Heating Inverter

Use Scenario: IGBT replacement in 7.5 kW VFD output stage driving 3-phase induction motor at 4 kHz PWM.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with integrated body diode conducting freewheeling current during dead-time.

Use Value: Body diode t_rr = 344 ns and Q_rr = 5.3 μC minimize reverse recovery spikes, reducing EMI filter size and gate driver stress.

Use Scenario: Resonant tank switch in 15 kW solid-state induction heater operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to high dI/dt (>100 A/μs) and repetitive UIS events during coil detuning.

Use Value: 367 mJ E_AS rating withstands worst-case detuned operation; low C_oss = 90 pF maintains ZVS boundary across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω, Q_g = 72 nC, TO-220 package, no specified E_AS rating	Lacks avalanche rating; requires external clamping in inductive loads; lower thermal performance due to TO-220 R_thJC ≈ 1.0 °C/W	Prefer SIHB22N60ET1-GE3 where ruggedness in unclamped inductive switching is required.
IXFH22N60P	R_DS(on) = 0.22 Ω, Q_g = 105 nC, TO-247 package, E_AS = 420 mJ	Higher conduction loss and gate drive demand; larger footprint; superior avalanche margin but less optimized for high-frequency SMPS	Choose SIHB22N60ET1-GE3 for space-constrained D2PAK layouts and 100+ kHz designs; select IXFH22N60P only when >400 mJ E_AS is mandatory.

Compared with STP22NM60ND and IXFH22N60P, SIHB22N60ET1-GE3 delivers optimal balance of low Q_g, proven avalanche ruggedness, and D2PAK thermal performance-making it preferred for compact, high-efficiency 600 V power stages where layout area and switching loss are critical.

Availability

SIHB22N60ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHB22N60ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs-including SIHB22N60ET1-GE3-are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where low R_DS(on)×Q_g and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHB22N60ET1-GE3 at 100 °C case temperature?

The SIHB22N60ET1-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify heatsink interface resistance and ambient conditions to maintain this rating in actual SIHB22N60ET1-GE3 implementations.

Does SIHB22N60ET1-GE3 support logic-level gate drive?

No, SIHB22N60ET1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the rated R_DS(on) of 0.18 Ω. Driving SIHB22N60ET1-GE3 with 5 V logic signals results in significantly higher on-resistance and excessive conduction loss-standard 10 V or 12 V gate drivers are required for proper SIHB22N60ET1-GE3 operation.

What is the significance of the "-GE3" suffix in SIHB22N60ET1-GE3?

The "-GE3" suffix indicates that SIHB22N60ET1-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). It also denotes tape-and-reel packaging optimized for automated SMT placement. The "T1" denotes D2PAK tape-and-reel format with 800 units per reel-distinct from "T5" (2000 units) and "-E3" (bulk tray) variants of the same SIHB22N60ET1-GE3 die.

How does the body diode performance of SIHB22N60ET1-GE3 compare to standard FRDs?

The SIHB22N60ET1-GE3 body diode has V_SD = 1.2 V at 11 A and T_J = 25 °C, with t_rr = 344 ns and Q_rr = 5.3 μC. While slower than dedicated fast recovery diodes (FRDs), its parameters are optimized for synchronous rectification and freewheeling in hard-switched converters-not ultra-fast switching. For SIHB22N60ET1-GE3 applications requiring lower recovery loss, external Schottky or SiC diodes may supplement but are not required for standard PFC or motor drive use.

Can SIHB22N60ET1-GE3 be paralleled for higher current capacity?

Yes, SIHB22N60ET1-GE3 can be paralleled due to its positive V_DS temperature coefficient (0.71 V/°C), which promotes current sharing as junction temperature rises. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to damp oscillation. Thermal coupling between devices must also be minimized to avoid thermal runaway-verified SIHB22N60ET1-GE3 designs show stable sharing up to four units in 10 kW PFC modules.

SIHB22N60ET1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60ET1-GE3 FAQ

1.How can I place an order for SIHB22N60ET1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60ET1-GE3 reliable?

The price and inventory of SIHB22N60ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60ET1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60ET1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60ET1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60ET1-GE3?

SIHB22N60ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60ET1-GE3?

For technical support, including SIHB22N60ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60ET1-GE3 requirements.

6.How does Aetrix verify that SIHB22N60ET1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60ET1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60ET1-GE3?

All SIHB22N60ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60ET1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60ET1-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60ET1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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