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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60S-E3

Name: SIHB22N60S-E3
Brand: Vishay Siliconix
SKU: SIHB22N60S-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60S-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60S-E3.pdf

Description:: MOSFET N-CH 600V 22A TO263

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Product details

Overview

SIHB22N60S-E3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.190 Ω at V_GS = 10 V, Q_g = 98 nC max, and 100 % avalanche tested - deployed in PFC stages and hard-switching inverters requiring high dV/dt ruggedness (37 V/ns) and low conduction/switching loss trade-off.

For engineers reviewing the SIHB22N60S-E3 datasheet, SIHB22N60S-E3 pinout, SIHB22N60S-E3 application, or SIHB22N60S-E3 equivalent, key selection criteria include verified avalanche energy rating (E_AS = 690 mJ), body diode reverse recovery performance (t_rr = 462–690 ns), thermal resistance (R_thJC = 0.5 °C/W), and Pb-free/halogen-free compliance per ordering code E3.

Technical Context

This MOSFET belongs to Vishay's S Series Generation One platform, optimized for high-efficiency 600 V switching in continuous conduction mode (CCM) PFC and solar inverter half-bridge legs. Its ultra-low gate charge (Q_g = 75–110 nC typ/max) and low R_DS(on) × Q_g figure-of-merit reduce total switching losses while maintaining robust unclamped inductive switching capability (EAR = 25 mJ).

The device integrates a fast-recovery body diode with t_rr = 462–690 ns and Q_rr = 8.3–16 μC at 25 °C, enabling reliable operation in synchronous rectification and bidirectional topologies without external freewheeling diodes. Its dV/dt ruggedness of 37 V/ns at T_J = 125 °C ensures noise immunity in high-speed gate drive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for surge transients
R_DS(on) max @ 10 V	0.190 Ω - enables ≤ 9.2 W conduction loss at 22 A continuous drain current
Q_g max	110 nC - determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	690 mJ - guarantees single-pulse avalanche survivability under worst-case inductive turn-off
dV/dt ruggedness	37 V/ns - prevents false turn-on during high-slew-rate commutation in bridge configurations
R_thJC	0.5 °C/W - allows ≥ 250 W power dissipation with 125 °C junction-to-case temperature gradient
t_rr	462–690 ns - defines minimum dead-time setting to avoid shoot-through in synchronous rectifiers

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal management and mechanical robustness; 3-pin configuration (G, D, S) with drain connected to tab for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers
D (Drain)	High-side power output	Connected to exposed copper tab; carries full load current and requires thermal interface to heatsink
S (Source)	Reference node / return path	Common connection point for gate drive reference and current sensing; ties to power ground in low-side switch configuration

Key Features

Feature	Design Value
100 % avalanche tested	Each unit validated for single-pulse E_AS = 690 mJ - eliminates field failure risk in inductive load switching
Ultra-low R_DS(on) × Q_g	Typical 0.160 Ω × 75 nC = 12.0 Ω·nC - balances conduction and switching losses in 50–100 kHz PFC designs
dV/dt ruggedness	37 V/ns at T_J = 125 °C - suppresses parasitic turn-on without snubbers in high-frequency half-bridges
Fast body diode recovery	t_rr = 462 ns typ, Q_rr = 8.3 μC - reduces reverse recovery loss and EMI in discontinuous conduction mode (DCM) flyback
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709A - supports green manufacturing and end-of-life compliance

Applications

PFC Power Supply Stages	Solar Inverters
Use Scenario: Active boost PFC stage in 1–3 kW server PSUs operating at 65–100 kHz with 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 22 A RMS input current. Use Value: Low R_DS(on) minimizes conduction loss; high dV/dt rating prevents false triggering during fast line-voltage transitions.	Use Scenario: DC–AC inverter stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Half-bridge leg switch in two-level topology; rated for 600 V blocking and 22 A peak phase current. Use Value: Avalanche-rated design withstands inductive kickback from transformer leakage; low Q_g enables efficient 16–20 kHz SPWM switching.
UPS Systems	Motor Control Drives
Use Scenario: Online double-conversion UPS with bidirectional IGBT/MOSFET inverter delivering clean 230 V/50 Hz output. IC Role / Device Role / Timing Role: Output stage switch in H-bridge inverter; conducts 22 A continuous during battery backup mode. Use Value: Body diode t_rr < 700 ns ensures minimal cross-conduction loss during PWM dead-time; R_thJC = 0.5 °C/W supports forced-air cooling.	Use Scenario: Field-oriented control (FOC) drive for 3–5 HP industrial motors using 3-phase inverter with 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; switched at 8–16 kHz with precise gate timing. Use Value: Gate threshold stability (2.0–4.0 V) over -55 to +150 °C ensures consistent turn-on across ambient extremes; Q_gd/Q_gs ratio = 1.47 improves Miller immunity.

PFC Power Supply Stages

Solar Inverters

Use Scenario: Active boost PFC stage in 1–3 kW server PSUs operating at 65–100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 22 A RMS input current.

Use Value: Low R_DS(on) minimizes conduction loss; high dV/dt rating prevents false triggering during fast line-voltage transitions.

Use Scenario: DC–AC inverter stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Half-bridge leg switch in two-level topology; rated for 600 V blocking and 22 A peak phase current.

Use Value: Avalanche-rated design withstands inductive kickback from transformer leakage; low Q_g enables efficient 16–20 kHz SPWM switching.

UPS Systems

Motor Control Drives

Use Scenario: Online double-conversion UPS with bidirectional IGBT/MOSFET inverter delivering clean 230 V/50 Hz output.

IC Role / Device Role / Timing Role: Output stage switch in H-bridge inverter; conducts 22 A continuous during battery backup mode.

Use Value: Body diode t_rr < 700 ns ensures minimal cross-conduction loss during PWM dead-time; R_thJC = 0.5 °C/W supports forced-air cooling.

Use Scenario: Field-oriented control (FOC) drive for 3–5 HP industrial motors using 3-phase inverter with 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; switched at 8–16 kHz with precise gate timing.

Use Value: Gate threshold stability (2.0–4.0 V) over -55 to +150 °C ensures consistent turn-on across ambient extremes; Q_gd/Q_gs ratio = 1.47 improves Miller immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.185 Ω max, Q_g = 85 nC, TO-220FP package, no avalanche rating specified	Lacks 100 % E_AS test; higher R_thJA (65 °C/W) limits power density in compact layouts	Prefer SIHB22N60S-E3 where avalanche robustness and surface-mount thermal performance are critical
IXTH22N60L2	R_DS(on) = 0.195 Ω max, Q_g = 105 nC, TO-247 package, specified EAR = 30 mJ	Larger footprint; higher gate charge increases driver loss; slightly better avalanche energy but inferior thermal resistance (R_thJC = 0.65 °C/W)	Choose SIHB22N60S-E3 for space-constrained D2PAK layouts requiring lower R_thJC and proven dV/dt immunity

Compared with STP22N60M2 and IXTH22N60L2, the SIHB22N60S-E3 delivers superior thermal performance (R_thJC = 0.5 °C/W), guaranteed avalanche ruggedness, and optimized gate charge for high-frequency PFC - making it the preferred choice for thermally demanding, reliability-critical 600 V switching applications.

Availability

SIHB22N60S-E3 is available at Aetrix Electronics and suitable for PFC power supply stages, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SIHB22N60S-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHB22N60S-E3 belongs to Vishay's S Series Power MOSFET product line, engineered for high-efficiency, high-voltage switching in hard-switched and resonant topologies where avalanche capability and thermal performance are mission-critical.

FAQ

What is the maximum continuous drain current rating for SIHB22N60S-E3 at 100 °C case temperature?

The SIHB22N60S-E3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when heatsink temperature exceeds 25 °C. The SIHB22N60S-E3 maintains safe operation up to T_J = 150 °C, with linear derating beyond 100 °C case temperature.

Does SIHB22N60S-E3 have a fully rated avalanche capability, and what is the test condition?

Yes, the SIHB22N60S-E3 is 100 % avalanche tested per specification, with single-pulse avalanche energy E_AS = 690 mJ. Test conditions are V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A. This rating ensures robustness against inductive switching stress without external protection circuits.

What is the gate threshold voltage range for SIHB22N60S-E3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SIHB22N60S-E3 is 2.0–4.0 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHB22N60S-E3 requires ≥ 10 V V_GS for full R_DS(on) specification, so gate drive must maintain sufficient margin above threshold across temperature and process variation.

How does the body diode performance of SIHB22N60S-E3 compare to standard silicon diodes in flyback or LLC applications?

The SIHB22N60S-E3 body diode exhibits t_rr = 462–690 ns and Q_rr = 8.3–16 μC at 25 °C, significantly faster than general-purpose FRDs but slower than dedicated SiC Schottky diodes. In flyback or LLC converters, this enables moderate-frequency operation (≤ 100 kHz) without excessive reverse recovery loss - a key advantage of the SIHB22N60S-E3 in cost-sensitive, thermally constrained designs where discrete diodes would increase board area and BOM count.

Is SIHB22N60S-E3 compatible with lead-free reflow soldering processes, and what is the peak temperature limit?

Yes, the SIHB22N60S-E3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. The "E3" suffix explicitly denotes Pb-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. This makes the SIHB22N60S-E3 suitable for modern automated assembly lines without requiring special thermal profiles beyond standard J-STD-020D.3 requirements.

SIHB22N60S-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60S-E3 FAQ

1.How can I place an order for SIHB22N60S-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60S-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60S-E3 reliable?

The price and inventory of SIHB22N60S-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60S-E3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60S-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60S-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60S-E3?

SIHB22N60S-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60S-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60S-E3?

For technical support, including SIHB22N60S-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60S-E3 requirements.

6.How does Aetrix verify that SIHB22N60S-E3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60S-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60S-E3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60S-E3?

All SIHB22N60S-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60S-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60S-E3 part is unused and in its original packaging.

Return procedure for SIHB22N60S-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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