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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N65E-GE3

Name: SIHB22N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB22N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N65E-GE3.pdf

Description:: MOSFET N-CH 650V 22A D2PAK

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Product details

Overview

SIHB22N65E-GE3 from Vishay Siliconix is a 650 V, 22 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in server power supplies and PFC stages. It delivers R_DS(on) = 0.15 Ω (typ) at V_GS = 10 V, Q_g = 73 nC (typ), and E_AS = 691 mJ, enabling high-efficiency, avalanche-rugged operation in hard-switched topologies.

For engineers reviewing the SIHB22N65E-GE3 datasheet, SIHB22N65E-GE3 pinout, SIHB22N65E-GE3 application, or SIHB22N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for reduced drive loss, robust body diode with t_rr = 400 ns, and thermal resistance R_thJC = 0.55 °C/W for high-power density designs.

Technical Context

This device belongs to Vishay's E Series of high-voltage Super Junction MOSFETs, employing charge-balanced trench-gate structure to minimize R_DS(on) × Q_g figure-of-merit. Its 650 V rating supports universal-input PFC and LLC resonant converters operating up to 400 V DC bus.

The integrated body diode is rated for IS = 22 A continuous and features controlled reverse recovery (Q_rr = 5.9 μC, I_RRM = 20 A) to reduce switching stress in bridge-leg configurations. Avalanche-rated design ensures reliability under unclamped inductive switching (E_AS = 691 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus with ≥30 % voltage margin for transient overvoltage in telecom/server SMPS
R_DS(on) max	0.18 Ω @ V_GS = 10 V - Enables ≤2.2 W conduction loss at 11 A, critical for thermally constrained PFC stages
Q_g typ	73 nC - Reduces gate driver power dissipation and enables faster turn-on in high-frequency (>100 kHz) converters
E_AS	691 mJ - Guarantees single-pulse avalanche ruggedness without external snubbers in inductive load switching
t_rr	400 ns - Limits diode reverse recovery current overshoot and associated EMI in synchronous rectification
R_thJC	0.55 °C/W - Allows >200 W power dissipation with moderate heatsinking, supporting compact 1–3 kW power modules
I_D @ T_C = 100 °C	14 A - Defines usable current derating in enclosed industrial enclosures with limited airflow

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for low-inductance, high-current routing and enhanced thermal transfer to PCB copper pour or heatsink. Standard 3-lead surface-mount outline per JEDEC TO-263AB.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; low C_iss = 2415 pF minimizes Miller effect during switching
D (Drain)	High-side power output	Connected to HV DC bus; electrically tied to thermal pad for direct heat sinking
S (Source)	Power return / reference	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	11.7 Ω·nC - Directly improves system efficiency in both conduction and switching domains
Avalanche energy rated (UIS)	691 mJ - Eliminates need for external clamping circuits in motor drive or welding inverter applications
Ultra-low gate charge	Q_g = 73 nC (typ) - Enables use of low-cost, low-power gate drivers without compromising switching speed
Low C_iss	2415 pF - Reduces capacitive loading on controller, improving stability in high-frequency PWM control loops
Body diode with controlled t_rr	t_rr = 400 ns, Q_rr = 5.9 μC - Minimizes shoot-through risk and EMI in half-bridge configurations

Applications

Server Power Supply	PFC Stage
Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–2 kW at >95 % efficiency. IC Role / Device Role / Timing Role: High-voltage primary-side switching element handling 400 V DC bus and 22 A peak current. Use Value: Low R_DS(on) and Q_g directly reduce total losses, enabling higher power density and lower thermal management cost.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3 kW telecom rectifier. IC Role / Device Role / Timing Role: Fast-switching, high-reliability boost transistor operating at 65–100 kHz with 650 V blocking capability. Use Value: Avalanche rating and low C_oss ensure stable operation under line surges and light-load conditions without added protection.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in string inverter H-bridge stage converting 600–1000 V DC to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor with fast body diode for freewheeling paths. Use Value: 400 ns t_rr and 20 A I_RRM suppress voltage spikes during commutation, reducing snubber requirements and improving reliability.	Use Scenario: Inverter leg switch in 5–10 HP variable frequency drive powering induction motors in HVAC or pumps. IC Role / Device Role / Timing Role: Ruggedized power switch handling repetitive inductive switching and regenerative braking energy. Use Value: 691 mJ E_AS withstands unclamped inductive energy during fault events, extending system MTBF.

Server Power Supply

PFC Stage

Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–2 kW at >95 % efficiency.

IC Role / Device Role / Timing Role: High-voltage primary-side switching element handling 400 V DC bus and 22 A peak current.

Use Value: Low R_DS(on) and Q_g directly reduce total losses, enabling higher power density and lower thermal management cost.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3 kW telecom rectifier.

IC Role / Device Role / Timing Role: Fast-switching, high-reliability boost transistor operating at 65–100 kHz with 650 V blocking capability.

Use Value: Avalanche rating and low C_oss ensure stable operation under line surges and light-load conditions without added protection.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in string inverter H-bridge stage converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor with fast body diode for freewheeling paths.

Use Value: 400 ns t_rr and 20 A I_RRM suppress voltage spikes during commutation, reducing snubber requirements and improving reliability.

Use Scenario: Inverter leg switch in 5–10 HP variable frequency drive powering induction motors in HVAC or pumps.

IC Role / Device Role / Timing Role: Ruggedized power switch handling repetitive inductive switching and regenerative braking energy.

Use Value: 691 mJ E_AS withstands unclamped inductive energy during fault events, extending system MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22N65M5	650 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 65 nC, D²PAK package	Lower gate charge but higher R_DS(on); slightly reduced conduction loss at <10 A, higher at full load	Preferred where gate drive power is limiting, but requires thermal verification above 15 A continuous
IXTH24N65X2	650 V, 24 A, R_DS(on) = 0.165 Ω, Q_g = 82 nC, TO-247 package	Higher current rating and larger package; higher Q_g increases driver loss; better thermal spread via TO-247	Selected when board space allows TO-247 and peak current exceeds 22 A; not drop-in compatible due to footprint and pinout

Compared with STW22N65M5 and IXTH24N65X2, SIHB22N65E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and D2PAK manufacturability-ideal for high-volume, space-constrained server and telecom power designs requiring proven avalanche ruggedness.

Availability

SIHB22N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHB22N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-voltage, high-efficiency switching applications including PFC, server/telecom SMPS, and industrial inverters-designed for minimal R_DS(on) × Q_g and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHB22N65E-GE3 at 100 °C case temperature?

The SIHB22N65E-GE3 has a continuous drain current rating of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under real-world heatsink conditions and must be used for safe operating area (SOA) validation in designs where ambient or case temperature exceeds 25 °C. The SIHB22N65E-GE3 maintains full 22 A rating only at T_C = 25 °C.

Does SIHB22N65E-GE3 have avalanche capability, and how is it quantified?

Yes, SIHB22N65E-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 691 mJ, measured under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This specification confirms the device can safely absorb inductive energy without failure, making SIHB22N65E-GE3 suitable for hard-switched topologies like flyback or forward converters where voltage spikes occur.

What is the typical gate-to-source threshold voltage range for SIHB22N65E-GE3?

The gate-to-source threshold voltage (V_GS(th)) for SIHB22N65E-GE3 is specified from 2 V to 4 V at T_J = 25 °C, with V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious triggering. The SIHB22N65E-GE3 is not a logic-level device and requires ≥8 V for full enhancement in production systems.

How does the body diode performance of SIHB22N65E-GE3 compare to standard silicon diodes in freewheeling applications?

The integrated body diode of SIHB22N65E-GE3 exhibits t_rr = 400 ns, Q_rr = 5.9 μC, and V_SD = 1.2 V at I_S = 11 A and T_J = 25 °C-significantly faster and lower-loss than general-purpose FRD diodes in the same voltage class. In freewheeling paths, this reduces reverse recovery losses and EMI generation. Unlike external diodes, the SIHB22N65E-GE3 body diode shares thermal and layout constraints with the MOSFET channel, requiring co-optimization in layout.

Is SIHB22N65E-GE3 RoHS-compliant and halogen-free?

Yes, SIHB22N65E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standard (document 99912). The "-GE3" suffix explicitly denotes green, lead-free, and halogen-free construction per Vishay's ordering nomenclature. Full compliance documentation, including test reports and substance declarations, is available upon request for SIHB22N65E-GE3.

SIHB22N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2415 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N65E-GE3 FAQ

1.How can I place an order for SIHB22N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N65E-GE3 reliable?

The price and inventory of SIHB22N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N65E-GE3?

SIHB22N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N65E-GE3?

For technical support, including SIHB22N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N65E-GE3 requirements.

6.How does Aetrix verify that SIHB22N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N65E-GE3?

All SIHB22N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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