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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N65E-T1-GE3

Name: SIHB22N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHB22N65E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N65E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N65E-T1-GE3.pdf

Description:: N-CHANNEL 650V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHB22N65E-T1-GE3 from Vishay Siliconix is a 650 V, 22 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in server/telecom SMPS and PFC stages. It delivers R_DS(on) = 0.15 Ω (typ) at V_GS = 10 V, Q_g = 73 nC (typ), and E_AS = 691 mJ, enabling high-efficiency, avalanche-rugged operation in hard-switched topologies.

For engineers reviewing the SIHB22N65E-T1-GE3 datasheet, SIHB22N65E-T1-GE3 pinout, SIHB22N65E-T1-GE3 application, or SIHB22N65E-T1-GE3 equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 0.55 °C/W), body diode recovery metrics (t_rr = 400 ns, Q_rr = 5.9 μC), and real-world use context for industrial power conversion design.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized gate charge profile (Q_gd/Q_g = 32/73 ≈ 44%) to reduce Miller-induced switching losses. Its low C_iss = 2415 pF and ultra-low C_rss = 4 pF support fast, controllable turn-on/turn-off in 100–500 kHz PFC and LLC resonant converters.

The device integrates an avalanche-rated body diode with V_SD = 1.2 V (T_J = 25 °C, I_S = 11 A) and dV/dt immunity of 26 V/ns (reverse diode), making it suitable for continuous conduction mode (CCM) PFC and synchronous rectification where diode recovery stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage compatible with 400 V AC input PFC and 800 V DC bus systems
R_DS(on) max	0.18 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 11 A RMS in telecom PSU primary switches
Q_g typ	73 nC - Reduces gate drive power requirement and allows use with standard 1–2 A peak gate drivers
E_AS	691 mJ - Rated unclamped inductive switching energy supports robustness in flyback and forward converter snubberless designs
t_r/t_f	33/38 ns - Fast switching transitions minimize overlap loss in hard-switched topologies operating up to 300 kHz
R_thJC	0.55 °C/W - Enables 227 W power dissipation with ≤125 °C case temperature using standard heatsink mounting
Q_rr	5.9 μC - Low reverse recovery charge reduces diode-related switching loss and EMI in boost PFC stages

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-terminal configuration: Gate (G), Drain (D), Source (S). Package outline complies with JEDEC TO-263AB; thermal pad requires solder paste stencil opening per Vishay AN826 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–10 V logic-level drive; 15 nC Qgs enables fast turn-on with minimal Miller plateau duration
D	Drain (high-side switch node)	Connected to internal thermal pad; must be routed to high-current, low-inductance PCB copper pour for heat transfer and voltage stability
S	Source (return path)	Common reference for gate drive and current sensing; low-inductance Kelvin source connection recommended for accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	11.0 Ω·nC - Balances conduction and switching loss for optimal efficiency in 100–250 kHz PFC designs
Avalanche energy rating	691 mJ single-pulse - Eliminates need for external clamping in inductive load switching applications like motor drives
Ultra-low C_rss	4 pF - Minimizes Miller feedback, improving noise immunity and enabling stable operation with high dV/dt (>70 V/ns)
Body diode t_rr	400 ns - Faster than standard 650 V MOSFETs, reducing diode conduction loss and voltage overshoot in ZVS/ZCS circuits
Lead (Pb)-free & Halogen-free	RoHS-compliant construction - Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW active clamp forward converter for 48 V intermediate bus generation. IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 520 V DC link with 11 A RMS drain current. Use Value: R_DS(on) = 0.15 Ω and Q_g = 73 nC enable >95% full-load efficiency while maintaining <100 °C junction temperature under forced air cooling.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating at 100 kHz with CCM control. IC Role / Device Role / Timing Role: Unidirectional high-side switch managing line-frequency input rectification and sinusoidal current shaping. Use Value: Low Q_rr = 5.9 μC and fast t_rr = 400 ns reduce diode recovery loss by ~35% versus legacy 650 V MOSFETs, lowering thermal stress on heatsink.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter interfacing 1000 V PV arrays to 400 V battery storage. IC Role / Device Role / Timing Role: High-reliability switching element exposed to repetitive lightning surge transients and wide ambient temperature swings. Use Value: 650 V V_DS, E_AS = 691 mJ, and -55 to +150 °C T_J rating ensure robust operation without derating in outdoor solar enclosures.	Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive powering HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM output stage with integrated freewheeling diode. Use Value: Body diode V_SD = 1.2 V and low R_DS(on) reduce conduction loss during regeneration, improving overall system efficiency by 1.2% at partial load.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW active clamp forward converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 520 V DC link with 11 A RMS drain current.

Use Value: R_DS(on) = 0.15 Ω and Q_g = 73 nC enable >95% full-load efficiency while maintaining <100 °C junction temperature under forced air cooling.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating at 100 kHz with CCM control.

IC Role / Device Role / Timing Role: Unidirectional high-side switch managing line-frequency input rectification and sinusoidal current shaping.

Use Value: Low Q_rr = 5.9 μC and fast t_rr = 400 ns reduce diode recovery loss by ~35% versus legacy 650 V MOSFETs, lowering thermal stress on heatsink.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter interfacing 1000 V PV arrays to 400 V battery storage.

IC Role / Device Role / Timing Role: High-reliability switching element exposed to repetitive lightning surge transients and wide ambient temperature swings.

Use Value: 650 V V_DS, E_AS = 691 mJ, and -55 to +150 °C T_J rating ensure robust operation without derating in outdoor solar enclosures.

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive powering HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM output stage with integrated freewheeling diode.

Use Value: Body diode V_SD = 1.2 V and low R_DS(on) reduce conduction loss during regeneration, improving overall system efficiency by 1.2% at partial load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22N65M5	R_DS(on) = 0.19 Ω, Q_g = 65 nC, D²PAK package, no specified E_AS rating	Lacks avalanche energy specification; requires external snubber in inductive switching	Preferable where gate drive current is limited but avalanche ruggedness is not required
IXFH22N65X2	R_DS(on) = 0.17 Ω, Q_g = 82 nC, TO-247 package, E_AS = 720 mJ	Larger through-hole package; higher Q_g increases driver complexity and switching loss	Preferred for high-power, low-frequency (<50 kHz) industrial inverters needing maximum thermal margin

Compared with STW22N65M5 and IXFH22N65X2, the SIHB22N65E-T1-GE3 offers the best balance of low Q_g/R_DS(on) FOM and certified avalanche capability in surface-mount form, making it ideal for space-constrained, high-frequency telecom and server power supplies requiring production-ready reliability.

Availability

SIHB22N65E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB22N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching in enterprise and industrial power conversion, emphasizing low FOM, avalanche ruggedness, and RoHS-compliant packaging for automated SMT assembly.

FAQ

What is the maximum continuous drain current rating for SIHB22N65E-T1-GE3 at 100 °C case temperature?

The SIHB22N65E-T1-GE3 has a continuous drain current rating of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations when mounted on a standard PCB with moderate heatsinking, and must be used in thermal design calculations alongside R_thJC = 0.55 °C/W to ensure T_J ≤ 150 °C under worst-case ambient conditions.

Does SIHB22N65E-T1-GE3 support logic-level gate drive?

No, SIHB22N65E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it is characterized and optimized for 10 V gate drive. Full enhancement and guaranteed R_DS(on) ≤ 0.18 Ω require V_GS = 10 V; operation at 5 V yields significantly higher on-resistance and is not supported by datasheet specifications for SIHB22N65E-T1-GE3.

What is the recommended PCB layout practice for the thermal pad of SIHB22N65E-T1-GE3?

The D2PAK thermal pad of SIHB22N65E-T1-GE3 must be soldered to a large, low-thermal-resistance copper area on the PCB, preferably with multiple thermal vias to inner ground planes. Vishay recommends minimum pad dimensions per AN826: 0.420" × 0.355" (10.67 mm × 9.02 mm), with solder paste stencil aperture matching the exposed metal area to ensure void-free attachment and optimal R_thJC performance.

How does the body diode performance of SIHB22N65E-T1-GE3 compare to standard 650 V MOSFETs?

The SIHB22N65E-T1-GE3 features a fast, low-loss body diode with t_rr = 400 ns and Q_rr = 5.9 μC at T_J = 25 °C, which is 20–30% lower Q_rr than typical 650 V MOSFETs in the same R_DS(on) class. This directly reduces diode conduction loss and voltage overshoot in hard-commutated PFC and flyback converters, improving system efficiency and EMI behavior.

Is SIHB22N65E-T1-GE3 suitable for use in automotive under-hood applications?

No, SIHB22N65E-T1-GE3 is not qualified for automotive under-hood use. While its operating temperature range extends to +150 °C, it lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed parametric stability over automotive temperature cycling and humidity tests. For automotive applications, Vishay's AEC-Q101-qualified SQ series or equivalent qualified alternatives should be selected instead of SIHB22N65E-T1-GE3.

SIHB22N65E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2415 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N65E-T1-GE3 FAQ

1.How can I place an order for SIHB22N65E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N65E-T1-GE3 reliable?

The price and inventory of SIHB22N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N65E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N65E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N65E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N65E-T1-GE3?

SIHB22N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N65E-T1-GE3?

For technical support, including SIHB22N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N65E-T1-GE3 requirements.

6.How does Aetrix verify that SIHB22N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N65E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N65E-T1-GE3?

All SIHB22N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N65E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N65E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N65E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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