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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB23N60E-GE3

Name: SIHB23N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB23N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB23N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB23N60E-GE3.pdf

Description:: MOSFET N-CH 600V 23A D2PAK

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Product details

Overview

SIHB23N60E-GE3 from Vishay Siliconix is a 600 V, 23 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.158 Ω at V_GS = 10 V, Q_g = 95 nC, and avalanche-rated UIS energy of 353 mJ. It delivers low conduction and switching losses for high-efficiency power conversion in PFC and SMPS stages.

For engineers reviewing the SIHB23N60E-GE3 datasheet, SIHB23N60E-GE3 pinout, SIHB23N60E-GE3 application, or SIHB23N60E-GE3 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies where gate drive efficiency, thermal robustness, and unclamped inductive switching capability are critical.

Technical Context

The SIHB23N60E-GE3 employs a planar high-voltage trench-enhanced silicon process optimized for 600 V operation, with a gate threshold voltage (V_GS(th)) of 2–4 V and zero-gate-voltage drain current (I_DSS) ≤ 1 μA at 600 V. Its dynamic parameters-C_iss = 2418 pF, C_oss = 119 pF, and C_rss = 4 pF-are specified at V_DS = 100 V and f = 1 MHz, supporting fast turn-on/turn-off with controlled dV/dt.

Thermally, it features R_thJC = 0.55 °C/W (junction-to-case, drain), enabling 227 W maximum power dissipation at T_C = 25 °C, and supports repetitive operation up to T_J = 150 °C with linear derating above 25 °C. The integrated body diode exhibits V_SD = 0.9–1.2 V at I_S = 12 A and t_rr = 384–768 ns under defined recovery conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin against transients
R_DS(on) max @ 10 V	0.158 Ω - enables <1.8 W conduction loss at 23 A continuous drain current
Q_g max	95 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency PFC
E_AS	353 mJ - ensures reliable operation under unclamped inductive switching (UIS) stress
I_D cont @ T_C = 100 °C	15 A - defines usable current envelope in thermally constrained PCB layouts
t_r/t_f	38–76 ns / 34–68 ns - enables <100 kHz hard-switched operation with low switching loss trade-off
V_SD @ I_S = 12 A	0.9–1.2 V - minimizes reverse conduction loss during synchronous rectification or freewheeling

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal transfer; 3-pin configuration (G, D, S) with drain connected to the large thermal pad on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold 2–4 V; requires <95 nC charge for full enhancement
D (Drain)	High-side power output	Connected to exposed copper thermal pad; carries full load current and withstands 600 V blocking
S (Source)	Reference node / return path	Common connection for gate drive reference and current sensing; tied to source of body diode

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	15.0 Ω·nC - balances conduction and switching loss for optimal 65–100 kHz PFC efficiency
Avalanche energy rating (E_AS)	353 mJ - eliminates need for external snubbers in inductive load switching circuits
Ultra-low C_rss	4 pF - minimizes Miller feedback, improving noise immunity and dV/dt ruggedness (37 V/ns)
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912
Body diode t_rr and Q_rr	384–768 ns / 6.4–12.8 μC - enables predictable recovery behavior in bridge-leg and synchronous configurations

Applications

Server Power Supply PFC Stage	Solar PV Inverter DC-DC Stage
Use Scenario: Boost converter operating at 65–100 kHz in front-end active PFC of 1–3 kW rack-mounted server PSUs. IC Role / Device Role / Timing Role: Main switching device handling 23 A RMS input current, synchronized to AC line frequency and PWM controller. Use Value: Low Q_g and R_DS(on) reduce total losses by >12 % vs. legacy 600 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.	Use Scenario: Isolated DC-DC stage converting 600–1000 V DC input to 400 V bus in string-level solar inverters. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, operating at 50–120 kHz with ZVS assist. Use Value: 353 mJ E_AS rating tolerates transient overloads during grid fault events without failure, extending field reliability.
Industrial Motor Drive Inverter	Fluorescent Ballast Lighting
Use Scenario: 3-phase inverter driving 5–7.5 HP induction motors in HVAC and pump control systems. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter leg, commutating 15 A continuous phase current. Use Value: R_thJC = 0.55 °C/W enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.	Use Scenario: High-frequency resonant half-bridge driver for electronic fluorescent ballasts (25–65 kHz). IC Role / Device Role / Timing Role: Fast-switching power switch controlling lamp current via series-resonant tank. Use Value: Low C_rss (4 pF) suppresses false triggering during high dV/dt transitions, eliminating flicker and acoustic noise.

Server Power Supply PFC Stage

Solar PV Inverter DC-DC Stage

Use Scenario: Boost converter operating at 65–100 kHz in front-end active PFC of 1–3 kW rack-mounted server PSUs.

IC Role / Device Role / Timing Role: Main switching device handling 23 A RMS input current, synchronized to AC line frequency and PWM controller.

Use Value: Low Q_g and R_DS(on) reduce total losses by >12 % vs. legacy 600 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.

Use Scenario: Isolated DC-DC stage converting 600–1000 V DC input to 400 V bus in string-level solar inverters.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, operating at 50–120 kHz with ZVS assist.

Use Value: 353 mJ E_AS rating tolerates transient overloads during grid fault events without failure, extending field reliability.

Industrial Motor Drive Inverter

Fluorescent Ballast Lighting

Use Scenario: 3-phase inverter driving 5–7.5 HP induction motors in HVAC and pump control systems.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter leg, commutating 15 A continuous phase current.

Use Value: R_thJC = 0.55 °C/W enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Use Scenario: High-frequency resonant half-bridge driver for electronic fluorescent ballasts (25–65 kHz).

IC Role / Device Role / Timing Role: Fast-switching power switch controlling lamp current via series-resonant tank.

Use Value: Low C_rss (4 pF) suppresses false triggering during high dV/dt transitions, eliminating flicker and acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.16 Ω, Q_g = 72 nC, E_AS = 320 mJ, TO-220FP package	Lower gate charge but higher R_DS(on); lacks D2PAK thermal performance	Prefer when gate drive power is limiting and case temperature stays below 85 °C
IXTH24N60L2	R_DS(on) = 0.155 Ω, Q_g = 110 nC, E_AS = 420 mJ, TO-247 package	Higher avalanche rating but larger footprint and higher drive requirement	Choose for ultra-rugged industrial UPS where layout space permits TO-247

Compared with STP22N60M2 and IXTH24N60L2, the SIHB23N60E-GE3 offers best-in-class thermal resistance (0.55 °C/W) in surface-mount form factor, making it optimal for compact, high-power-density designs where board space and thermal management are co-constrained.

Availability

SIHB23N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB23N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs-including SIHB23N60E-GE3-are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where FOM, avalanche ruggedness, and thermal performance are prioritized.

FAQ

What is the maximum continuous drain current rating for SIHB23N60E-GE3 at 100 °C case temperature?

The SIHB23N60E-GE3 supports 15 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 23 A rating at T_C = 25 °C and must be validated against actual PCB layout, heatsinking, and ambient conditions. The SIHB23N60E-GE3 datasheet confirms linear derating at 1.8 W/°C above 25 °C.

Does SIHB23N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHB23N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 353 mJ, tested per JEDEC standard JESD24-1 using L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A, and starting T_J = 25 °C. This rating applies to repetitive operation within thermal limits and is documented in Vishay's S15-0277-Rev. C datasheet for SIHB23N60E-GE3.

What is the gate threshold voltage range for SIHB23N60E-GE3, and how does it affect drive circuit design?

The SIHB23N60E-GE3 has a gate threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA, confirming logic-level compatibility. However, full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) ≤ 0.158 Ω. Drive circuits must supply ≥12 V with sufficient peak current to deliver 95 nC gate charge rapidly-critical for minimizing switching losses in the SIHB23N60E-GE3.

Can SIHB23N60E-GE3 be used in synchronous rectification configurations, and what body diode parameters matter most?

Yes, the SIHB23N60E-GE3 can serve in synchronous rectification due to its integral body diode with V_SD = 0.9–1.2 V at I_S = 12 A and t_rr = 384–768 ns. For such use, Q_rr (6.4–12.8 μC) and dV/dt ruggedness (34 V/ns reverse diode) are critical-low Q_rr reduces cross-conduction loss, while high dV/dt tolerance prevents false turn-on. These values are measured and published for SIHB23N60E-GE3.

Is SIHB23N60E-GE3 compliant with lead-free and halogen-free requirements, and which standards does it meet?

Yes, SIHB23N60E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's internal material categorization per document #99912. The "-GE3" suffix explicitly denotes this compliance, and soldering is qualified for peak temperatures up to 300 °C for 10 seconds-fully compatible with standard lead-free reflow profiles used for SIHB23N60E-GE3 assembly.

SIHB23N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2418 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB23N60E-GE3 FAQ

1.How can I place an order for SIHB23N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB23N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB23N60E-GE3 reliable?

The price and inventory of SIHB23N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB23N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB23N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB23N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB23N60E-GE3?

SIHB23N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB23N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB23N60E-GE3?

For technical support, including SIHB23N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB23N60E-GE3 requirements.

6.How does Aetrix verify that SIHB23N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB23N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB23N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB23N60E-GE3?

All SIHB23N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB23N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB23N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHB23N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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