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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N65E-E3

Name: SIHB24N65E-E3
Brand: Vishay Siliconix
SKU: SIHB24N65E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N65E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N65E-E3.pdf

Description:: MOSFET N-CH 650V 24A D2PAK

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Product details

Overview

SIHB24N65E-E3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) max 0.145 Ω at V_GS = 10 V, Q_g max 122 nC, and avalanche-rated (E_AS = 508 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in server and telecom power supplies.

For engineers reviewing the SIHB24N65E-E3 datasheet, SIHB24N65E-E3 pinout, SIHB24N65E-E3 application, or SIHB24N65E-E3 equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 0.5 °C/W), body diode characteristics (V_SD = 1.2 V, t_rr = 433 ns), and real-world application context for industrial and renewable energy designs.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching operation. Its gate charge profile (Q_gs = 21 nC, Q_gd = 37 nC) supports fast turn-on/turn-off with controlled dV/dt (37 V/ns at T_J = 125 °C) and robust unclamped inductive switching capability.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 7.3 μC) and peak recovery current (I_RRM = 28 A), enabling reliable operation in synchronous rectification and bidirectional topologies without external Schottky supplementation in moderate-frequency PFC circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for transient overvoltage handling
R_DS(on) max @ 10 V	0.145 Ω - enables <1.7 W conduction loss at 12 A continuous drain current
Q_g max	122 nC - determines gate drive power requirement and switching speed in 100–300 kHz SMPS
E_AS	508 mJ - rated single-pulse avalanche energy ensures ruggedness during load dump or short-circuit events
R_thJC	0.5 °C/W - allows 250 W power dissipation with ≤125 °C junction rise above case temperature
t_rr	433 ns - defines minimum dead-time setting to prevent shoot-through in half-bridge configurations
V_SD	1.2 V @ 12 A - sets forward conduction loss of internal body diode in freewheeling or LLC resonant modes

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 (D) and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 2740 pF affects driver selection and EMI filtering
D (Drain)	High-side power terminal	Connected to exposed metal tab; carries full load current and requires ≥100 mm² 2-oz copper pour for thermal management
S (Source)	Reference node	Common return path for gate drive and load current; critical for stable gate voltage referencing in high-dV/dt environments

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	17.7 Ω·nC - balances conduction and switching losses for optimal efficiency at 200 kHz in PFC boost stages
Avalanche energy rating	508 mJ - eliminates need for external snubbers in inductive load switching applications like welding inverters
Low C_oss (122 pF)	Reduces capacitive turn-off losses and improves light-load efficiency in resonant converters
Body diode t_rr = 433 ns	Enables use in quasi-resonant flyback and LLC topologies without external diode replacement
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from bulk DC bus to transformer primary. Use Value: 650 V rating and 508 mJ avalanche capability withstand line surges and transformer leakage spikes without failure.	Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW output with >96 % efficiency. IC Role / Device Role / Timing Role: Fast-switching power switch operating at 150 kHz with zero-voltage switching assistance. Use Value: Low Q_g (122 nC) and C_iss (2740 pF) reduce gate drive losses and improve ZVS initiation margin.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching device in three-phase string inverter with 1000 V DC input and 20 kHz PWM modulation. IC Role / Device Role / Timing Role: Main inverter bridge switch handling bidirectional current flow during reactive power control. Use Value: Body diode t_rr = 433 ns and Q_rr = 7.3 μC minimize commutation losses and EMI during hard-commutated transitions.	Use Scenario: Half-bridge switch in 20 kW induction heating generator operating at 50–100 kHz. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element driving series-resonant tank circuit. Use Value: R_thJC = 0.5 °C/W enables direct mounting to liquid-cooled heatsink for sustained 24 A RMS operation.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from bulk DC bus to transformer primary.

Use Value: 650 V rating and 508 mJ avalanche capability withstand line surges and transformer leakage spikes without failure.

Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW output with >96 % efficiency.

IC Role / Device Role / Timing Role: Fast-switching power switch operating at 150 kHz with zero-voltage switching assistance.

Use Value: Low Q_g (122 nC) and C_iss (2740 pF) reduce gate drive losses and improve ZVS initiation margin.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching device in three-phase string inverter with 1000 V DC input and 20 kHz PWM modulation.

IC Role / Device Role / Timing Role: Main inverter bridge switch handling bidirectional current flow during reactive power control.

Use Value: Body diode t_rr = 433 ns and Q_rr = 7.3 μC minimize commutation losses and EMI during hard-commutated transitions.

Use Scenario: Half-bridge switch in 20 kW induction heating generator operating at 50–100 kHz.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element driving series-resonant tank circuit.

Use Value: R_thJC = 0.5 °C/W enables direct mounting to liquid-cooled heatsink for sustained 24 A RMS operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	R_DS(on) = 0.135 Ω, Q_g = 95 nC, TO-247 package	Higher thermal mass but through-hole mounting; lower gate charge reduces driver stress	Prefer when board space allows through-hole layout and lower gate drive power is prioritized
IXFH24N65X2	R_DS(on) = 0.125 Ω, Q_g = 108 nC, HiPerFET™ Gen 2 process	Improved body diode softness (t_rr = 320 ns); higher cost and different footprint	Select when reduced EMI and diode recovery noise are critical in sensitive RF environments

Compared with STW24N65M5 and IXFH24N65X2, the SIHB24N65E-E3 offers superior surface-mount integration density and industry-standard D2PAK thermal interface, while maintaining competitive R_DS(on) × Q_g performance for cost-sensitive industrial power designs.

Availability

SIHB24N65E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHB24N65E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in SMPS, PFC, and motor drives-designed for ruggedness, low FOM, and repeatable avalanche performance under real-world fault conditions.

FAQ

What is the maximum continuous drain current rating for SIHB24N65E-E3 at 100 °C case temperature?

The SIHB24N65E-E3 has a maximum continuous drain current (I_D) of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual PCB copper area and airflow in the final design. The SIHB24N65E-E3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHB24N65E-E3 support logic-level gate drive?

No, the SIHB24N65E-E3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it requires V_GS = 10 V to achieve the specified R_DS(on) of 0.145 Ω. Driving the SIHB24N65E-E3 with only 5 V will result in significantly higher on-resistance and conduction losses. A dedicated 10 V gate driver is recommended.

What is the significance of the 508 mJ avalanche energy rating for SIHB24N65E-E3?

The 508 mJ single-pulse avalanche energy (E_AS) rating means the SIHB24N65E-E3 can safely absorb that amount of inductive energy without failure during unclamped inductive switching events-such as transformer saturation or sudden load disconnection. This specification is measured under standardized conditions (V_DD = 50 V, I_AS = 6 A) and confirms ruggedness beyond normal SOA limits. The SIHB24N65E-E3 is qualified for repetitive avalanche operation in properly designed circuits.

Can SIHB24N65E-E3 be used in synchronous rectification topologies?

The SIHB24N65E-E3 contains an integral body diode with t_rr = 433 ns and Q_rr = 7.3 μC, making it usable in non-critical synchronous rectification where external diode replacement isn't required. However, its body diode is not optimized for soft recovery. For high-frequency, low-loss synchronous rectification (e.g., in LLC resonant converters), a dedicated low-Q_rr MOSFET or Schottky diode is preferred. The SIHB24N65E-E3 remains appropriate for primary-side switching in such topologies.

What is the thermal resistance from junction to case (R_thJC) for SIHB24N65E-E3, and how does it impact heatsink selection?

The SIHB24N65E-E3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.5 °C/W, measured from die junction to the drain tab surface. This low value enables efficient heat transfer to the PCB copper or external heatsink. When designing thermal management, assume worst-case R_thJC = 0.5 °C/W and combine it with board-level R_thCA (junction-to-ambient via PCB) or heatsink R_thHA to calculate total thermal resistance. The SIHB24N65E-E3 requires ≥100 mm² of 2-oz copper connected to the drain tab for rated 250 W dissipation.

SIHB24N65E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N65E-E3 FAQ

1.How can I place an order for SIHB24N65E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N65E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N65E-E3 reliable?

The price and inventory of SIHB24N65E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65E-E3 is usually 5 days.

3.What payment methods are accepted for SIHB24N65E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N65E-E3?

SIHB24N65E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N65E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N65E-E3?

For technical support, including SIHB24N65E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65E-E3 requirements.

6.How does Aetrix verify that SIHB24N65E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N65E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65E-E3 meets industry standards.

7.What is the process for return or replacement of SIHB24N65E-E3?

All SIHB24N65E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N65E-E3 part is unused and in its original packaging.

Return procedure for SIHB24N65E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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