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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N65EFT1-GE3

Name: SIHB24N65EFT1-GE3
Brand: Vishay Siliconix
SKU: SIHB24N65EFT1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N65EFT1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N65EFT1-GE3.pdf

Description:: N-CHANNEL 650V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHB24N65EFT1-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel Power MOSFET in D2PAK (TO-263) package, featuring fast body diode, ultra-low gate charge (81 nC typ.), and low R_DS(on) of 0.13 Ω at V_GS = 10 V. It delivers high efficiency in phase-shifted bridge and LCC resonant topologies for telecom and solar PV inverters.

For engineers reviewing the SIHB24N65EFT1-GE3 datasheet, SIHB24N65EFT1-GE3 pinout, SIHB24N65EFT1-GE3 application, or SIHB24N65EFT1-GE3 equivalent, key selection criteria include its 691 mJ single-pulse avalanche energy rating, 151 ns typical reverse recovery time (t_rr), and 0.5 °C/W junction-to-case thermal resistance - critical for high-reliability SMPS and industrial power conversion designs.

Technical Context

This E-series MOSFET employs optimized silicon process and cell layout to reduce Q_rr (0.9–2.1 μC) and t_rr (151–288 ns) while maintaining robust 650 V V_DS rating and 70 V/ns dV/dt capability. Its low C_iss (2774 pF typ.) and Co(er) (96 pF) support high-frequency switching with minimal capacitive losses.

The device integrates an avalanche-rated body diode with I_RRM = 13 A and V_SD = 0.9–1.2 V at 12 A, enabling reliable synchronous rectification and ZVS operation in hard-switched and resonant converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input systems with ≥1.6× safety margin in PV inverters and telecom rectifiers
R_DS(on) max @ 25°C	0.156 Ω - enables <1.8 W conduction loss at 12 A continuous drain current in TO-263 package
Q_g max	122 nC - reduces gate drive power requirement and allows use of lower-cost drivers in 100–300 kHz SMPS
t_rr typ.	151 ns - minimizes commutation loss and EMI in phase-shifted full-bridge and LLC converters
E_AS	691 mJ - ensures ruggedness against unclamped inductive switching events in welding and battery charger applications
R_thJC	0.5 °C/W - enables 250 W power dissipation with ≤125°C case temperature rise, supporting compact heatsink designs
I_D cont. @ T_C = 100°C	15 A - defines usable current envelope in thermally constrained industrial enclosures

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance and high-current handling. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 10 V logic-level drive; threshold voltage 2–4 V enables compatibility with standard PWM controllers
D	Drain connection (exposed pad)	Primary high-voltage node; electrically connected to heatsink via soldered copper pad for optimal thermal path
S	Source return path	Reference node for gate drive and current sensing; low-inductance layout critical for fast switching stability

Key Features

Feature	Design Value
Fast body diode	151 ns t_rr and 0.9 μC Q_rr reduce reverse recovery loss by >40% vs. standard 650 V MOSFETs in ZVS circuits
Low FOM (R_DS(on) × Q_g)	15.9 Ω·nC - balances conduction and switching loss for peak efficiency at 100–200 kHz in telecom PSUs
Avalanche rated	691 mJ E_AS - eliminates need for external snubbers in inductive load switching (e.g., welder primary side)
Ultra-low C_iss	2774 pF - lowers Miller effect and improves dv/dt immunity in high-noise industrial environments
Halogen-free & Pb-free	Meets RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Telecom Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW server rectifier with phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–150 kHz with ZVS turn-on enabled by fast body diode. Use Value: 151 ns t_rr and 0.5 °C/W R_thJC enable >96% efficiency and 65°C max case temperature at full load.	Use Scenario: DC-link switching stage in string inverter handling 600 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Main power switch in three-level NPC topology requiring 650 V blocking and low switching loss. Use Value: 691 mJ E_AS withstands grid fault transients; 0.13 Ω R_DS(on) limits conduction loss to <2.5 W at 20 A RMS.
Industrial Battery Charger	HID Lighting Ballast
Use Scenario: Isolated DC-DC stage in 5 kW EVSE charger converting 400 V DC to 400 V battery voltage. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter with bidirectional current capability. Use Value: Body diode V_SD = 0.9 V at 12 A reduces forward drop vs. Schottky alternatives, improving light-load efficiency by 1.2%.	Use Scenario: Resonant switch in electronic ballast driving 400 W metal halide lamp with 150 kHz frequency sweep. IC Role / Device Role / Timing Role: High-speed switching transistor in LCC resonant tank requiring low Q_g and stable C_oss. Use Value: 81 nC Q_g and 333 pF Co(tr) ensure precise zero-current switching across 100–200 kHz tuning range.

Telecom Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW server rectifier with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–150 kHz with ZVS turn-on enabled by fast body diode.

Use Value: 151 ns t_rr and 0.5 °C/W R_thJC enable >96% efficiency and 65°C max case temperature at full load.

Use Scenario: DC-link switching stage in string inverter handling 600 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: Main power switch in three-level NPC topology requiring 650 V blocking and low switching loss.

Use Value: 691 mJ E_AS withstands grid fault transients; 0.13 Ω R_DS(on) limits conduction loss to <2.5 W at 20 A RMS.

Industrial Battery Charger

HID Lighting Ballast

Use Scenario: Isolated DC-DC stage in 5 kW EVSE charger converting 400 V DC to 400 V battery voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter with bidirectional current capability.

Use Value: Body diode V_SD = 0.9 V at 12 A reduces forward drop vs. Schottky alternatives, improving light-load efficiency by 1.2%.

Use Scenario: Resonant switch in electronic ballast driving 400 W metal halide lamp with 150 kHz frequency sweep.

IC Role / Device Role / Timing Role: High-speed switching transistor in LCC resonant tank requiring low Q_g and stable C_oss.

Use Value: 81 nC Q_g and 333 pF Co(tr) ensure precise zero-current switching across 100–200 kHz tuning range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	650 V, 24 A, R_DS(on) = 0.145 Ω, Q_g = 95 nC, t_rr = 220 ns, D²PAK package	Higher t_rr increases ZVS dead-time requirement; lower Q_g eases gate drive but reduces diode softness	Prefer when gate drive power is constrained and moderate diode recovery is acceptable
IXFH24N65X2	650 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 102 nC, t_rr = 175 ns, TO-247 package	Larger TO-247 footprint; higher R_thJC (0.65 °C/W); improved SOA but requires larger PCB area	Prefer when higher avalanche margin is needed and board space permits through-hole mounting

Compared with STW24N65M5 and IXFH24N65X2, SIHB24N65EFT1-GE3 offers the lowest t_rr and best R_DS(on) × Q_g FOM among D2PAK-packaged 650 V MOSFETs, making it optimal for space-constrained, high-frequency resonant converters where diode recovery loss dominates system efficiency.

Availability

SIHB24N65EFT1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term production continuity.

Supply support for SIHB24N65EFT1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion in telecom, industrial, and renewable energy systems, emphasizing fast body diode performance and rugged avalanche capability.

FAQ

What is the maximum continuous drain current for SIHB24N65EFT1-GE3 at 100°C case temperature?

The SIHB24N65EFT1-GE3 supports 15 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150°C maximum junction temperature limit. The SIHB24N65EFT1-GE3 maintains R_DS(on) stability up to this temperature, enabling predictable conduction loss modeling in thermal design.

Does SIHB24N65EFT1-GE3 have avalanche capability, and how is it rated?

Yes, the SIHB24N65EFT1-GE3 is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 691 mJ under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This rating confirms ruggedness against inductive switching transients in motor drives and welding equipment. The SIHB24N65EFT1-GE3 does not require external clamping circuits for typical unclamped inductive loads.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB24N65EFT1-GE3?

The SIHB24N65EFT1-GE3 features a fast body diode with a typical reverse recovery time (t_rr) of 151 ns at T_J = 25°C, I_F = 12 A, dI/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the Specifications table and is critical for minimizing commutation loss in ZVS topologies. The SIHB24N65EFT1-GE3 achieves this performance via E-series silicon optimization, not external diode integration.

Is SIHB24N65EFT1-GE3 compatible with standard 10 V gate drivers?

Yes, the SIHB24N65EFT1-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2–4 V and is fully characterized at V_GS = 10 V, making it compatible with industry-standard PWM controllers and gate drivers. Its total gate charge (Q_g) is 81 nC typical at 10 V, enabling efficient drive with common 1–2 A peak-output drivers. The SIHB24N65EFT1-GE3 does not require negative gate bias for turn-off.

What package type is used for SIHB24N65EFT1-GE3, and what are its thermal advantages?

The SIHB24N65EFT1-GE3 uses the D2PAK (TO-263) surface-mount package with an exposed drain pad, delivering a maximum junction-to-case thermal resistance (R_thJC) of 0.5 °C/W. This low value enables effective heat transfer to the PCB copper plane or external heatsink, supporting 250 W power dissipation at T_C = 25°C. The SIHB24N65EFT1-GE3 leverages this thermal performance for compact, high-power-density designs without forced air cooling.

SIHB24N65EFT1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 156mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2774 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N65EFT1-GE3 FAQ

1.How can I place an order for SIHB24N65EFT1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N65EFT1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N65EFT1-GE3 reliable?

The price and inventory of SIHB24N65EFT1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65EFT1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB24N65EFT1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65EFT1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N65EFT1-GE3?

SIHB24N65EFT1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N65EFT1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N65EFT1-GE3?

For technical support, including SIHB24N65EFT1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65EFT1-GE3 requirements.

6.How does Aetrix verify that SIHB24N65EFT1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N65EFT1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65EFT1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB24N65EFT1-GE3?

All SIHB24N65EFT1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65EFT1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N65EFT1-GE3 part is unused and in its original packaging.

Return procedure for SIHB24N65EFT1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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