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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N65E-GE3

Name: SIHB24N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB24N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N65E-GE3.pdf

Description:: MOSFET N-CH 650V 24A D2PAK

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Product details

Overview

SIHB24N65E-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.145 Ω at V_GS = 10 V, Q_g = 122 nC, and avalanche-rated (E_AS = 508 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHB24N65E-GE3 datasheet, SIHB24N65E-GE3 pinout, SIHB24N65E-GE3 application, or SIHB24N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for reduced switching loss, robust UIS capability, thermal resistance R_thJC = 0.5 °C/W, and D2PAK footprint compatibility with high-power board layouts.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (2740 pF) and C_oss (122 pF) support fast switching with controlled dV/dt (37 V/ns).

The integrated body diode exhibits t_rr = 433 ns and Q_rr = 7.3 μC at 25 °C, enabling moderate-frequency freewheeling in bridge topologies. Thermal design is supported by R_thJC = 0.5 °C/W and maximum T_J = +150 °C, allowing sustained operation under high ambient conditions when mounted on adequate copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports DC bus voltages up to 400 V PFC and 520 V inverter DC links with margin
R_DS(on) max @ 10 V	0.145 Ω - limits conduction loss to ≤ 41.5 W at 24 A continuous drain current
Q_g max	122 nC - determines gate driver power requirement and switching speed in 50–100 kHz SMPS
E_AS	508 mJ - enables unclamped inductive switching without failure in PFC or flyback snubber circuits
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤ 125 °C junction-to-case temperature rise at rated P_D
C_iss	2740 pF - impacts Miller effect and gate drive stability in high-dV/dt environments
t_r/t_f	84/69 ns - defines minimum practical switching period and EMI profile in hard-switched converters

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), surface-mount, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <122 nC charge for full enhancement; sensitive to ESD
D (Drain)	High-voltage output terminal	Connected to PCB thermal pad; carries full switched current and withstands 650 V transient
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; ties to power ground in low-side configurations

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–100 kHz PFC
Avalanche energy rating (UIS)	508 mJ - eliminates need for external clamping in inductive load transients
Ultra-low Q_gd/Q_g ratio	30 % - reduces Miller plateau duration and improves dv/dt immunity during turn-off
Body diode softness (Q_rr/I_RRM)	0.26 μC/A - minimizes voltage overshoot and ringing during reverse recovery in half-bridge freewheeling
High dV/dt immunity	37 V/ns - sustains reliable operation in noisy high-voltage switching nodes without spurious turn-on

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 80+ Platinum-rated 1–3 kW telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant and hard-switched forward topologies. Use Value: Enables >96 % efficiency at full load via low R_DS(on) and 122 nC Q_g, reducing heatsink size and system cost.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase IGBT/MOSFET hybrid H-bridge with active clamp. Use Value: Withstands 650 V blocking and delivers 24 A RMS current while maintaining <125 °C T_J under forced air cooling.
Industrial Motor Drive	Induction Heating System
Use Scenario: Inverter stage of 5–10 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Low-side switching device in six-pack IGBT/MOSFET modules driving 3-phase induction motors. Use Value: Avalanche rating protects against inductive kickback during rapid deceleration; R_thJC = 0.5 °C/W simplifies thermal interface design.	Use Scenario: Half-bridge switching in 20–50 kHz resonant tank circuits for domestic and commercial induction cooktops. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch controlling resonant current in series-LC load. Use Value: Low C_oss (122 pF) and fast t_f (69 ns) minimize dead-time losses and improve ZVS margin across wide load range.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 80+ Platinum-rated 1–3 kW telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant and hard-switched forward topologies.

Use Value: Enables >96 % efficiency at full load via low R_DS(on) and 122 nC Q_g, reducing heatsink size and system cost.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase IGBT/MOSFET hybrid H-bridge with active clamp.

Use Value: Withstands 650 V blocking and delivers 24 A RMS current while maintaining <125 °C T_J under forced air cooling.

Industrial Motor Drive

Induction Heating System

Use Scenario: Inverter stage of 5–10 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Low-side switching device in six-pack IGBT/MOSFET modules driving 3-phase induction motors.

Use Value: Avalanche rating protects against inductive kickback during rapid deceleration; R_thJC = 0.5 °C/W simplifies thermal interface design.

Use Scenario: Half-bridge switching in 20–50 kHz resonant tank circuits for domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch controlling resonant current in series-LC load.

Use Value: Low C_oss (122 pF) and fast t_f (69 ns) minimize dead-time losses and improve ZVS margin across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	650 V, 24 A, R_DS(on) = 0.14 Ω, Q_g = 95 nC, D²PAK package	Lower Q_g improves light-load efficiency but reduced E_AS (380 mJ) limits ruggedness in high-inductance loads	Prefer for higher-frequency (>120 kHz) PFC where gate drive loss dominates
IXTH24N65X2	650 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 110 nC, TO-247 package	Larger TO-247 offers better thermal performance (R_thJC = 0.45 °C/W) but requires through-hole layout change	Choose when board space permits and junction temperature must stay <135 °C under 100 % load

Compared with STW24N65M5 and IXTH24N65X2, SIHB24N65E-GE3 provides the highest avalanche ruggedness (508 mJ) and best balance of R_DS(on) and Q_g in surface-mount D2PAK, making it optimal for cost-sensitive, medium-frequency industrial SMPS where reliability under transient stress is critical.

Availability

SIHB24N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHB24N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs, including SIHB24N65E-GE3, are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where ruggedness and thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHB24N65E-GE3 at 100 °C case temperature?

The SIHB24N65E-GE3 has a continuous drain current rating of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHB24N65E-GE3 maintains this rating under steady-state conduction with proper PCB copper area and airflow.

Does SIHB24N65E-GE3 support logic-level gate drive?

No, SIHB24N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) ≤ 0.145 Ω. Driving SIHB24N65E-GE3 with only 5 V may result in excessive conduction loss and thermal runaway. Standard 10 V gate drivers or dedicated MOSFET drivers are recommended for reliable operation of SIHB24N65E-GE3.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB24N65E-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHB24N65E-GE3 is 433 ns, measured at T_J = 25 °C, I_F = 12 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is critical for half-bridge and synchronous rectifier designs where diode recovery behavior affects switching loss and voltage overshoot. The SIHB24N65E-GE3's t_rr is consistent with its Q_rr = 7.3 μC and I_RRM = 28 A ratings.

Can SIHB24N65E-GE3 be used in avalanche mode repeatedly?

Yes, SIHB24N65E-GE3 is rated for repetitive unclamped inductive switching (UIS) with E_AS = 508 mJ per pulse (single-pulse test condition). However, repetitive avalanche operation must respect thermal limits: each event contributes to junction heating, and cumulative energy must keep T_J ≤ 150 °C. Derating curves and transient thermal impedance data in the datasheet must be applied for repetitive use. SIHB24N65E-GE3 is designed for such ruggedness but requires careful thermal design in repeated UIS applications.

What is the thermal resistance from junction to case (R_thJC) for SIHB24N65E-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHB24N65E-GE3 is 0.5 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes ideal mounting to a large copper plane with soldered thermal pad. Real-world R_thJC depends on PCB layout, solder quality, and thermal interface material. For accurate thermal modeling, the SIHB24N65E-GE3's normalized transient impedance curve (Fig. 10) should be used alongside actual duty cycle and pulse width.

SIHB24N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N65E-GE3 FAQ

1.How can I place an order for SIHB24N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N65E-GE3 reliable?

The price and inventory of SIHB24N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB24N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N65E-GE3?

SIHB24N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N65E-GE3?

For technical support, including SIHB24N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65E-GE3 requirements.

6.How does Aetrix verify that SIHB24N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB24N65E-GE3?

All SIHB24N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB24N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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