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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N65ET1-GE3

Name: SIHB24N65ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB24N65ET1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N65ET1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N65ET1-GE3.pdf

Description:: MOSFET N-CH 650V 24A TO263

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Product details

Overview

SIHB24N65ET1-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.145 Ω @ V_GS = 10 V, Q_g = 122 nC, and E_AS = 508 mJ. It serves as a high-voltage switching element in primary-side SMPS and PFC stages of server power supplies.

For engineers reviewing the SIHB24N65ET1-GE3 datasheet, SIHB24N65ET1-GE3 pinout, SIHB24N65ET1-GE3 application, or SIHB24N65ET1-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance R_thJC = 0.5 °C/W, and body diode recovery performance (t_rr = 433 ns, Q_rr = 7.3 μC).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching and resonant topologies. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust noise immunity while enabling standard 10 V gate drive, and its low C_iss (2740 pF) and C_oss (122 pF) reduce switching losses at high frequencies up to 100 kHz.

The device integrates an ultra-low Q_gd/Q_g ratio (37/122 ≈ 30%) to minimize Miller-induced turn-off delay, and its body diode exhibits controlled reverse recovery with dV/dt capability of 11 V/ns - critical for minimizing voltage overshoot in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % safety margin for transient overvoltage in telecom rectifiers.
R_DS(on) max @ 25 °C	0.145 Ω - enables <1.7 W conduction loss at 12 A continuous drain current in PFC boost stages.
Q_g max	122 nC - determines gate driver power requirement (~1.2 mW per MHz at 10 V drive) in high-frequency SMPS.
E_AS	508 mJ - qualifies for unclamped inductive switching in motor drive H-bridges without external snubbers.
t_rr	433 ns - limits diode reverse recovery stress during synchronous rectification in LLC resonant converters.
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above 25 °C case temperature under forced air cooling.
I_D cont @ T_C = 100 °C	16 A - defines maximum sustained output current in compact heatsink-limited telecom brick designs.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for thermal and electrical connection. Three-terminal surface-mount configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Accepts 10 V logic-level gate drive; input capacitance C_iss = 2740 pF requires ≥1 A peak driver capability for 25 ns switching.
D	High-side power terminal	Drain tab is electrically and thermally connected to PCB copper pour; must be isolated from other nets except ground plane.
S	Reference node / return path	Source connects to power ground; body diode anode is tied internally to S - critical for freewheeling path definition.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - balances conduction and switching loss trade-off for 65–100 kHz PFC operation.
Avalanche-rated (UIS)	E_AS = 508 mJ - eliminates need for external clamping in flyback or forward converter primary switches.
Ultra-low Q_gd	37 nC - reduces Miller plateau duration, improving turn-off controllability in half-bridge phase-shifted topologies.
Body diode dV/dt rating	11 V/ns - prevents spurious turn-on during high-di/dt commutation in motor drive inverters.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1.5 kW from 380 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 100–300 kHz with zero-voltage switching. Use Value: Low Q_g and C_oss enable >96 % efficiency at full load; R_thJC = 0.5 °C/W supports compact heatsink design.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier converting 200–264 V AC to 400 V DC. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch handling 24 A peak current at 65 kHz. Use Value: R_DS(on) = 0.145 Ω limits conduction loss to <1.7 W; avalanche rating handles line surges without failure.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string inverter DC/DC stage stepping up PV array voltage (600–1000 V) to 1200 V bus. IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC topology operating at 16 kHz with soft switching. Use Value: t_rr = 433 ns and Q_rr = 7.3 μC minimize diode recovery loss and EMI generation during commutation.	Use Scenario: Upper-leg IGBT replacement in 7.5 kW VFD inverter driving induction motor at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Hard-switched high-side power switch in 3-phase inverter leg; conducts 16 A RMS continuously. Use Value: E_AS = 508 mJ withstands motor short-circuit events; V_DS = 650 V supports 480 V AC input with margin.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1.5 kW from 380 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 100–300 kHz with zero-voltage switching.

Use Value: Low Q_g and C_oss enable >96 % efficiency at full load; R_thJC = 0.5 °C/W supports compact heatsink design.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier converting 200–264 V AC to 400 V DC.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch handling 24 A peak current at 65 kHz.

Use Value: R_DS(on) = 0.145 Ω limits conduction loss to <1.7 W; avalanche rating handles line surges without failure.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string inverter DC/DC stage stepping up PV array voltage (600–1000 V) to 1200 V bus.

IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC topology operating at 16 kHz with soft switching.

Use Value: t_rr = 433 ns and Q_rr = 7.3 μC minimize diode recovery loss and EMI generation during commutation.

Use Scenario: Upper-leg IGBT replacement in 7.5 kW VFD inverter driving induction motor at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Hard-switched high-side power switch in 3-phase inverter leg; conducts 16 A RMS continuously.

Use Value: E_AS = 508 mJ withstands motor short-circuit events; V_DS = 650 V supports 480 V AC input with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	R_DS(on) = 0.135 Ω, Q_g = 95 nC, TO-247 package, no specified E_AS rating	Lower gate charge improves high-frequency efficiency but lacks avalanche qualification for unclamped inductive loads	Prefer for ZVS LLC where avalanche stress is absent; avoid in flyback or hard-switched PFC without snubber.
IXFH24N65X2	R_DS(on) = 0.130 Ω, Q_g = 105 nC, TO-247 package, E_AS = 420 mJ	Higher dV/dt capability (20 V/ns) but lower avalanche energy than SIHB24N65ET1-GE3	Choose when fast dv/dt immunity is prioritized over single-pulse energy handling; verify layout for reduced ringing.

Compared with STW24N65M5 and IXFH24N65X2, SIHB24N65ET1-GE3 offers the highest certified avalanche energy (508 mJ) and D2PAK surface-mount compatibility - critical for space-constrained telecom and server power modules requiring automated assembly and thermal pad soldering.

Availability

SIHB24N65ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHB24N65ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The E Series Power MOSFET product line targets high-voltage switching applications demanding low R_DS(on), low gate charge, and robust avalanche performance - specifically engineered for telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHB24N65ET1-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHB24N65ET1-GE3 is 16 A when the case temperature is maintained at 100 °C. This rating is derived from thermal derating curves and assumes proper PCB copper area for heat dissipation. At 25 °C case temperature, the rating increases to 24 A. Engineers must validate thermal design using R_thJC = 0.5 °C/W and ambient conditions specific to their SIHB24N65ET1-GE3 implementation.

Does SIHB24N65ET1-GE3 have a qualified avalanche energy rating?

Yes, SIHB24N65ET1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 508 mJ. This value is measured per JEDEC standard JESD24-11 at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6 A. The rating confirms ruggedness in flyback, forward, and motor drive applications where inductive energy must be safely absorbed.

What is the gate threshold voltage range for SIHB24N65ET1-GE3?

The gate threshold voltage (V_GS(th)) for SIHB24N65ET1-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against false triggering in noisy power environments. The typical value is ~3 V, and the parameter is tested across temperature and process variation to guarantee consistency in SIHB24N65ET1-GE3 production lots.

How does the body diode performance of SIHB24N65ET1-GE3 compare to standard silicon diodes?

The integrated body diode in SIHB24N65ET1-GE3 has a forward voltage (V_SD) of 1.2 V at I_S = 12 A and T_J = 25 °C, with reverse recovery time (t_rr) of 433 ns and Q_rr of 7.3 μC. While slower than dedicated SiC Schottky diodes, its parameters are optimized for synchronous rectification and freewheeling in hard-switched topologies - significantly better than older-generation MOSFETs and validated for use in PFC and motor drive applications without external diode parallel.

Is SIHB24N65ET1-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB24N65ET1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the manufacturer's soldering recommendations. The device is marked "-GE3" indicating lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU. Thermal pad soldering to PCB is required for optimal thermal performance, and stencil design should accommodate the D2PAK thermal pad dimensions per Vishay document 73397.

SIHB24N65ET1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N65ET1-GE3 FAQ

1.How can I place an order for SIHB24N65ET1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N65ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N65ET1-GE3 reliable?

The price and inventory of SIHB24N65ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65ET1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB24N65ET1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65ET1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N65ET1-GE3?

SIHB24N65ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N65ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N65ET1-GE3?

For technical support, including SIHB24N65ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65ET1-GE3 requirements.

6.How does Aetrix verify that SIHB24N65ET1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N65ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65ET1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB24N65ET1-GE3?

All SIHB24N65ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65ET1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N65ET1-GE3 part is unused and in its original packaging.

Return procedure for SIHB24N65ET1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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