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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N65ET5-GE3

Name: SIHB24N65ET5-GE3
Brand: Vishay Siliconix
SKU: SIHB24N65ET5-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N65ET5-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N65ET5-GE3.pdf

Description:: MOSFET N-CH 650V 24A TO263

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Product details

Overview

SIHB24N65ET5-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.145 Ω at V_GS = 10 V, Q_g = 122 nC, and avalanche-rated (E_AS = 508 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHB24N65ET5-GE3 datasheet, SIHB24N65ET5-GE3 pinout, SIHB24N65ET5-GE3 application, or SIHB24N65ET5-GE3 equivalent, key selection criteria include its 650 V V_DS, 24 A continuous drain current at T_C = 25 °C, 0.5 °C/W junction-to-case thermal resistance, and D2PAK package suitability for high-power board-level thermal management.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage switching with low gate charge and reduced C_iss (2740 pF) to minimize drive loss. Its body diode exhibits t_rr = 433 ns and Q_rr = 7.3 μC at I_F = 12 A, supporting hard-switched and resonant topologies requiring controlled reverse recovery.

The MOSFET supports unclamped inductive switching (UIS) up to 508 mJ and operates across -55 °C to +150 °C junction temperature range. Its V_GS(th) of 2–4 V and ±30 V gate rating enable robust gate drive design with standard 10 V logic-level controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports primary-side switching in 400 V DC bus PFC and 380 V telecom rectified inputs
R_DS(on) max @ 25 °C	0.145 Ω - limits conduction loss to ≤ 34 W at 24 A, enabling compact heatsink design
Q_g max	122 nC - determines gate driver peak current requirement (~1.2 A for 100 ns rise time)
E_AS	508 mJ - enables reliable operation under transient overloads without external snubbers
R_thJC	0.5 °C/W - allows >200 W power dissipation with 100 °C case-to-ambient delta
t_rr	433 ns - defines minimum dead-time requirement in half-bridge configurations
I_D continuous @ T_C = 100 °C	16 A - sets usable current derating for sealed enclosures or forced-air-limited environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance and mechanical robustness. Three terminals: Gate (G), Drain (D), Source (S). Drain tab electrically connected to die substrate and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 10 V logic-level drive; ±30 V absolute max rating prevents ESD-induced failure during handling
D	Drain (high-side switch node)	Connected to exposed metal tab; must be soldered to large copper pour for thermal and electrical integrity
S	Source (return path)	Reference node for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - improves trade-off between conduction and switching loss in 100–500 kHz SMPS
Avalanche energy rated	508 mJ single-pulse - eliminates need for external clamping in inductive turn-off transients
Ultra-low Q_gd/Q_g ratio	30 % (37/122 nC) - reduces Miller effect, enabling stable high-dV/dt operation up to 37 V/ns
Low C_iss	2740 pF - lowers gate drive power and improves EMI behavior in fast-switching converters
Body diode softness	Q_rr = 7.3 μC, I_RRM = 28 A - minimizes voltage overshoot and ringing during commutation in bridge legs

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW, 94 % efficient LLC resonant converter with 380 V DC bus. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with zero-voltage switching. Use Value: 0.145 Ω R_DS(on) and 122 nC Q_g reduce total losses by 12 % vs. legacy 600 V MOSFETs, improving thermal margin at full load.	Use Scenario: Active clamp forward converter in 48 V/50 A telecom rectifier with 400 V AC input. IC Role / Device Role / Timing Role: Main switch handling 24 A continuous current with repetitive UIS events during line surges. Use Value: 508 mJ E_AS rating withstands 10× surge events without degradation, extending field reliability beyond 10 years.
PV Inverter PFC	Industrial Motor Drive
Use Scenario: Boost PFC stage in 5 kW solar inverter interfacing 600–1000 V PV string. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with critical conduction mode (CrCM). Use Value: 433 ns t_rr and soft recovery limit diode-induced voltage spikes to < 750 V, avoiding overvoltage shutdown.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with 12 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch conducting bidirectional current via integrated body diode during freewheeling. Use Value: 24 A continuous source current rating and 1.2 V V_SD ensure < 28 W conduction loss in motor phase-leg freewheel paths.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW, 94 % efficient LLC resonant converter with 380 V DC bus.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with zero-voltage switching.

Use Value: 0.145 Ω R_DS(on) and 122 nC Q_g reduce total losses by 12 % vs. legacy 600 V MOSFETs, improving thermal margin at full load.

Use Scenario: Active clamp forward converter in 48 V/50 A telecom rectifier with 400 V AC input.

IC Role / Device Role / Timing Role: Main switch handling 24 A continuous current with repetitive UIS events during line surges.

Use Value: 508 mJ E_AS rating withstands 10× surge events without degradation, extending field reliability beyond 10 years.

PV Inverter PFC

Industrial Motor Drive

Use Scenario: Boost PFC stage in 5 kW solar inverter interfacing 600–1000 V PV string.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with critical conduction mode (CrCM).

Use Value: 433 ns t_rr and soft recovery limit diode-induced voltage spikes to < 750 V, avoiding overvoltage shutdown.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with 12 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch conducting bidirectional current via integrated body diode during freewheeling.

Use Value: 24 A continuous source current rating and 1.2 V V_SD ensure < 28 W conduction loss in motor phase-leg freewheel paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	650 V, 24 A, R_DS(on) = 0.14 Ω, Q_g = 95 nC, D²PAK package	Lower Q_g reduces gate drive loss but lacks specified E_AS rating	Preferred where gate drive efficiency dominates; verify avalanche robustness with system-level testing
IXTH24N65X2	650 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 108 nC, TO-247 package	Larger TO-247 package offers higher R_thJC (0.45 °C/W) but requires through-hole assembly	Selected when superior thermal performance justifies PCB real estate and assembly cost premium

Compared with STW24N65M5 and IXTH24N65X2, SIHB24N65ET5-GE3 provides balanced trade-offs: highest E_AS rating among the three, surface-mount D2PAK compatibility, and verified soft-body-diode behavior-making it optimal for space-constrained, high-reliability PFC and SMPS designs.

Availability

SIHB24N65ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverter PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHB24N65ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-voltage, high-current switching applications in computing, telecom, and renewable energy systems, prioritizing low FOM and rugged avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHB24N65ET5-GE3 at 100 °C case temperature?

The SIHB24N65ET5-GE3 has a maximum continuous drain current of 16 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsinking to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHB24N65ET5-GE3 support logic-level gate drive?

No, SIHB24N65ET5-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it is specified for R_DS(on) at V_GS = 10 V. Full enhancement requires ≥10 V gate drive; operation below 8 V results in significantly increased R_DS(on) and conduction loss. It is incompatible with 3.3 V or 5 V logic drivers without level-shifting.

What is the significance of the "-GE3" suffix in SIHB24N65ET5-GE3?

"-GE3" denotes Vishay's lead (Pb)-free and halogen-free packaging standard compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 3. The "T5" indicates tape-and-reel packaging format (500 pcs/reel), while "GE3" confirms green-compliant materials and processing-critical for automotive and industrial end-equipment compliance reporting.

How does the body diode performance of SIHB24N65ET5-GE3 impact half-bridge designs?

The SIHB24N65ET5-GE3 body diode has t_rr = 433 ns and Q_rr = 7.3 μC at 12 A, enabling predictable commutation in half-bridge configurations. Its soft recovery characteristic (low I_RRM/Q_rr ratio) suppresses voltage overshoot during freewheeling, reducing stress on the complementary switch and EMI filter requirements-particularly beneficial in high-frequency PFC and resonant converters.

Is SIHB24N65ET5-GE3 suitable for use in solar inverter applications?

Yes, SIHB24N65ET5-GE3 is explicitly listed in Vishay's documentation for solar (PV) inverters, particularly in boost PFC stages. Its 650 V V_DS, 508 mJ E_AS, and 433 ns t_rr meet the demanding requirements of 1000 V PV string interfaces, including surge immunity, high-temperature operation, and reliable body-diode commutation during MPPT transitions.

SIHB24N65ET5-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N65ET5-GE3 FAQ

1.How can I place an order for SIHB24N65ET5-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N65ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N65ET5-GE3 reliable?

The price and inventory of SIHB24N65ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65ET5-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB24N65ET5-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65ET5-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N65ET5-GE3?

SIHB24N65ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N65ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N65ET5-GE3?

For technical support, including SIHB24N65ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65ET5-GE3 requirements.

6.How does Aetrix verify that SIHB24N65ET5-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N65ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65ET5-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB24N65ET5-GE3?

All SIHB24N65ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65ET5-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N65ET5-GE3 part is unused and in its original packaging.

Return procedure for SIHB24N65ET5-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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