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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB24N80AE-GE3

Name: SIHB24N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB24N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB24N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB24N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 21A D2PAK

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Product details

Overview

SIHB24N80AE-GE3 from Vishay Siliconix is an 800 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.160 Ω R_DS(on) at V_GS = 10 V, 89 nC total gate charge, and 127 mJ single-pulse avalanche energy - optimized for high-voltage, high-efficiency switch-mode power supplies including telecom rectifiers and PFC stages.

For engineers reviewing the SIHB24N80AE-GE3 datasheet, SIHB24N80AE-GE3 pinout, SIHB24N80AE-GE3 application, or SIHB24N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low FOM (R_DS(on) × Q_g), Co(er) of 52 pF, 0.6 °C/W R_thJC, and avalanche-rated ruggedness for reliable operation in hard-switched industrial converters.

Technical Context

This device employs a high-voltage TrenchFET® process enabling stable 800 V blocking with low on-resistance and reduced switching losses. Its low effective output capacitance (Co(er) = 52 pF) and fast switching times (t_d(on) = 21 ns typ., t_f = 51 ns typ.) support high-frequency operation up to 200 kHz in resonant and hard-switched topologies.

The integrated body diode exhibits 1.2 V forward voltage at 12 A and 476 ns typical reverse recovery time, with Q_rr = 7.8 μC - characteristics validated for use in continuous conduction mode (CCM) PFC and synchronous rectification where diode recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus and 380 V AC PFC applications without derating
R_DS(on) typ.	0.160 Ω at V_GS = 10 V, I_D = 10 A - enables <1.9 W conduction loss at 12 A, reducing heatsink requirements
Q_g max	89 nC - determines gate drive power and influences minimum achievable switching frequency in hard-switched designs
E_AS	127 mJ - rated unclamped inductive switching energy ensures robustness against transient overloads in motor drives and welders
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case temperature rise, supporting high-power density layouts
C_oss eff (Co(er))	52 pF - low energy-related output capacitance reduces turn-off loss and improves ZVS initiation in LLC converters
V_GS(th)	2–4 V - standard threshold compatible with 10 V gate drivers; avoids false turn-on in noisy industrial environments

Pinout & Package

D2PAK (TO-263) package with exposed drain thermal pad on bottom side; 3-pin surface-mount configuration optimized for high-current PCB traces and thermal vias to internal copper planes.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≥10 V drive for full enhancement; input capacitance C_iss = 1836 pF affects driver sizing
D	Drain	Main high-voltage current path; electrically connected to thermal pad - must be routed to high-voltage isolation zones and ground-referenced heat sinks
S	Source	Power return and reference node for gate drive; low-inductance source loop critical to minimize ringing during fast switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	14.2 Ω·nC - balances conduction and switching losses for optimal efficiency across 50–200 kHz SMPS operating range
Avalanche energy rating (E_AS)	127 mJ - enables reliable operation under inductive load transients without external snubbers in UPS and battery charger designs
Low Co(er)	52 pF - reduces stored output capacitance energy (E_oss), lowering turn-off loss and improving light-load efficiency in resonant converters
High dv/dt immunity	70 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise motor drive and welding inverter applications
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard - suitable for automotive-qualified and industrial-grade assemblies requiring material compliance traceability

Applications

Server Power Rectification	Telecom 48 V Input Rectifier
Use Scenario: Primary-side switching in 3 kW server PSU using phase-shifted full-bridge topology with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling 21 A peak drain current at 100 kHz switching frequency. Use Value: 0.160 Ω R_DS(on) and 89 nC Q_g enable >95% efficiency at full load while maintaining junction temperature below 135 °C.	Use Scenario: Active clamp forward converter in telecom rectifier supplying 48 V/60 A from -48 V DC input. IC Role / Device Role / Timing Role: Main switch subjected to repetitive 800 V blocking and 15 A conduction with strict EMI limits. Use Value: 127 mJ E_AS and 70 V/ns dv/dt rating ensure reliability during line surges and short-circuit events without derating.
PFC Boost Stage	Solar PV Inverter DC Link
Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 2 kW industrial power supply. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch with body diode conducting reverse recovery current at 100 kHz. Use Value: Q_rr = 7.8 μC and t_rr = 476 ns minimize diode-induced switching loss and reduce EMI filter size.	Use Scenario: DC link switching in string-level solar inverter handling 1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: High-reliability main switch operating at 16 kHz with repeated 800 V blocking duty. Use Value: 800 V V_DS rating with 150 °C T_J(max) and 0.6 °C/W R_thJC supports long-term field operation in outdoor enclosures.

Server Power Rectification

Telecom 48 V Input Rectifier

Use Scenario: Primary-side switching in 3 kW server PSU using phase-shifted full-bridge topology with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling 21 A peak drain current at 100 kHz switching frequency.

Use Value: 0.160 Ω R_DS(on) and 89 nC Q_g enable >95% efficiency at full load while maintaining junction temperature below 135 °C.

Use Scenario: Active clamp forward converter in telecom rectifier supplying 48 V/60 A from -48 V DC input.

IC Role / Device Role / Timing Role: Main switch subjected to repetitive 800 V blocking and 15 A conduction with strict EMI limits.

Use Value: 127 mJ E_AS and 70 V/ns dv/dt rating ensure reliability during line surges and short-circuit events without derating.

PFC Boost Stage

Solar PV Inverter DC Link

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 2 kW industrial power supply.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch with body diode conducting reverse recovery current at 100 kHz.

Use Value: Q_rr = 7.8 μC and t_rr = 476 ns minimize diode-induced switching loss and reduce EMI filter size.

Use Scenario: DC link switching in string-level solar inverter handling 1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: High-reliability main switch operating at 16 kHz with repeated 800 V blocking duty.

Use Value: 800 V V_DS rating with 150 °C T_J(max) and 0.6 °C/W R_thJC supports long-term field operation in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 75 nC, D²PAK package	Higher R_DS(on) increases conduction loss by ~105 % at 12 A; lower Q_g eases gate drive but does not offset resistive penalty	Prefer SIHB24N80AE-GE3 when thermal budget is constrained or efficiency >94 % required at full load
IXTH24N80L	800 V, 24 A, R_DS(on) = 0.22 Ω, Q_g = 105 nC, TO-247 package	Larger TO-247 footprint and higher Q_g demand stronger gate driver; 0.22 Ω R_DS(on) yields ~38 % higher conduction loss than SIHB24N80AE-GE3	Choose SIHB24N80AE-GE3 for space-constrained SMT designs needing lower R_DS(on) and better thermal resistance (0.6 vs. 0.85 °C/W)

Compared with STW20NK80Z and IXTH24N80L, SIHB24N80AE-GE3 delivers the lowest R_DS(on) in D2PAK format, best FOM for high-frequency PFC, and superior thermal performance - making it optimal for compact, high-efficiency 1–3 kW industrial and telecom power systems.

Availability

SIHB24N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHB24N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHB24N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered specifically for demanding high-efficiency switch-mode power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHB24N80AE-GE3 at 100 °C case temperature?

The SIHB24N80AE-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 21 A rating at 25 °C case temperature, based on a linear derating factor of 1.7 W/°C and R_thJC = 0.6 °C/W. Designers must verify actual case temperature under operating conditions to ensure safe margin below this limit.

Does SIHB24N80AE-GE3 support gate drive voltages below 10 V?

Yes, SIHB24N80AE-GE3 has a gate threshold voltage (V_GS(th)) range of 2–4 V, allowing partial enhancement at lower gate voltages. However, its R_DS(on) specification of 0.160 Ω is guaranteed only at V_GS = 10 V. Operating at 5 V or 8 V results in significantly higher on-resistance and increased conduction loss - SIHB24N80AE-GE3 should be driven with ≥10 V for full performance in high-efficiency applications.

What is the significance of the 127 mJ E_AS rating for SIHB24N80AE-GE3?

The 127 mJ single-pulse avalanche energy (E_AS) rating for SIHB24N80AE-GE3 quantifies its ability to absorb inductive energy during unclamped inductive switching events without failure. Tested per JEDEC JESD24-1 with L = 28.2 mH, I_AS = 3 A, and R_g = 25 Ω, this rating confirms ruggedness in motor drives, welders, and UPS systems where sudden load disconnection or short circuits may occur - SIHB24N80AE-GE3 does not require external avalanche snubbers in properly designed circuits.

How does the Co(er) value of 52 pF impact switching performance of SIHB24N80AE-GE3?

The effective output capacitance Co(er) of 52 pF for SIHB24N80AE-GE3 represents energy-related capacitance measured from V_DS = 0 to 480 V. This low value directly reduces turn-off switching loss (E_off ∝ Co(er) × V_DS² × f_sw) and improves zero-voltage switching (ZVS) capability in resonant topologies like LLC. Compared to alternatives with Co(er) > 100 pF, SIHB24N80AE-GE3 enables higher frequency operation while maintaining efficiency - a key advantage in compact 1–3 kW power supplies.

Is SIHB24N80AE-GE3 suitable for use in PFC boost stages operating in continuous conduction mode?

Yes, SIHB24N80AE-GE3 is explicitly recommended for PFC boost stages in continuous conduction mode (CCM). Its body diode parameters - V_SD = 1.2 V at 12 A, t_rr = 476 ns, and Q_rr = 7.8 μC - are characterized and optimized for CCM operation at 50–100 kHz. The low Q_rr minimizes reverse recovery loss and associated EMI, while the 800 V V_DS rating provides sufficient margin for 400 V DC bus transients - SIHB24N80AE-GE3 delivers proven performance in industrial PFC modules.

SIHB24N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1836 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB24N80AE-GE3 FAQ

1.How can I place an order for SIHB24N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB24N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB24N80AE-GE3 reliable?

The price and inventory of SIHB24N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB24N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB24N80AE-GE3?

SIHB24N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB24N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB24N80AE-GE3?

For technical support, including SIHB24N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB24N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB24N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB24N80AE-GE3?

All SIHB24N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB24N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB24N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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