Vishay Siliconix SIHB25N50E-GE3

Overview

SIHB25N50E-GE3 from Vishay Siliconix is a 500 V, 26 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for hard-switched topologies and PFC stages. It delivers R_DS(on) = 0.145 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated E_AS = 273 mJ, enabling high-efficiency 500 W–1 kW AC/DC power supplies.

For engineers reviewing the SIHB25N50E-GE3 datasheet, SIHB25N50E-GE3 pinout, SIHB25N50E-GE3 application, or SIHB25N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust UIS capability, and thermal performance with R_thJC = 0.5 °C/W - critical for compact, high-power-density SMPS and LED driver designs.

Technical Context

This device employs planar stripe silicon technology to achieve stable high-voltage blocking (500 V V_DS) while maintaining low gate charge and output capacitance. Its C_iss = 1980 pF and C_oss = 105 pF support fast switching with reduced Miller effect, and the integral body diode features t_rr = 338 ns and Q_rr = 5.3 μC for controlled recovery in bridge configurations.

The MOSFET is characterized across -55 °C to +150 °C junction temperature range, with V_GS(th) = 2.0–4.0 V and positive V_DS temperature coefficient (0.59 V/°C), ensuring current sharing stability in parallel operation. Its dV/dt immunity of 65 V/ns supports reliable operation in noisy high-di/dt environments.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance and high-current handling. Molded plastic body meets JEDEC TO-263AB outline; thermal pad soldered to PCB for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP24NM50N and IXTH24N50L, SIHB25N50E-GE3 offers superior thermal performance via D2PAK's low R_thJC, tighter R_DS(on) tolerance, and higher E_AS - making it optimal for space-constrained, high-reliability 500–800 W power converters requiring long-term stability.

Availability

SIHB25N50E-GE3 is available at Aetrix Electronics and suitable for hard-switched PFC, ATX silver-box power supplies, and two-stage LED lighting requiring stable component supply, consistent parametric performance, and long-lifecycle availability.

Supply support for SIHB25N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, power density, and application-specific optimization.

The E Series Power MOSFETs, including SIHB25N50E-GE3, are engineered for high-efficiency, high-voltage switching in computing, industrial, and lighting power supplies - prioritizing low FOM, avalanche ruggedness, and thermal efficiency.

FAQ

What is the maximum continuous drain current for SIHB25N50E-GE3 at 100 °C case temperature?

The SIHB25N50E-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating from the 26 A rating at 25 °C, based on its linear derating factor of 0.2 W/°C and R_thJC = 0.5 °C/W. Designers must ensure PCB copper area and heatsinking maintain case temperature ≤ 100 °C under full load to sustain this current in SIHB25N50E-GE3 applications.

Does SIHB25N50E-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHB25N50E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 273 mJ. Per Vishay test condition b, this is measured using V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.4 A. The rating confirms SIHB25N50E-GE3 can safely absorb inductive energy without failure in PFC choke or motor drive inductive loads - a key differentiator versus non-rated MOSFETs.

What is the gate threshold voltage range for SIHB25N50E-GE3, and why does it matter?

The gate threshold voltage V_GS(th) for SIHB25N50E-GE3 is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. A well-defined V_GS(th) also supports stable current sharing in paralleled SIHB25N50E-GE3 devices, critical for high-current power supply designs.

How does the body diode performance of SIHB25N50E-GE3 compare to standard MOSFETs?

The SIHB25N50E-GE3 body diode has t_rr = 338 ns and Q_rr = 5.3 μC at T_J = 25 °C, IF = I_S, dI/dt = 100 A/μs, and V_R = 25 V. These values are optimized for controlled recovery in hard-switched topologies - significantly lower Q_rr than general-purpose MOSFETs - reducing switching loss and EMI in PFC and half-bridge freewheeling paths where SIHB25N50E-GE3 is commonly deployed.

Is SIHB25N50E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?

Yes, SIHB25N50E-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS and Vishay's material categorization per document 99912. The "-GE3" suffix specifically denotes the D2PAK package with green molding compound, matte tin-plated leads, and adherence to JEDEC MS-013 standards - confirming SIHB25N50E-GE3 meets modern environmental and assembly requirements for reflow soldering and long-term reliability.