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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB28N60EF-GE3

Name: SIHB28N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB28N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB28N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB28N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 28A D2PAK

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Product details

Overview

SIHB28N60EF-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring fast body diode with 142 ns typical reverse recovery time (trr), 0.107 Ω typical R_DS(on) at V_GS = 10 V, and 33 nC typical gate charge (Q_g). It is engineered for high-efficiency, high-frequency switching in resonant LLC and phase-shifted bridge topologies used in server power supplies and solar inverters.

For engineers reviewing the SIHB28N60EF-GE3 datasheet, SIHB28N60EF-GE3 pinout, SIHB28N60EF-GE3 application, or SIHB28N60EF-GE3 equivalent, key selection criteria include its low Q_rr (0.97 μC), avalanche-rated UIS capability (691 mJ), and optimized FOM (R_DS(on) × Q_g) for reduced conduction and switching losses in ZVS SMPS designs.

Technical Context

This EF-series MOSFET employs trench-gate silicon technology with an integrated fast-recovery body diode, enabling operation in zero-voltage-switching (ZVS) topologies without external diode supplementation. Its 70 V/ns dV/dt rating and 900 A/μs diode dI/dt capability support robust commutation in hard- and soft-switched converters.

The device delivers stable R_DS(on) over temperature (0.76 V/°C V_DS tempco) and features low C_iss (2714 pF) and ultra-low C_rss (6 pF), minimizing Miller effect and improving gate drive efficiency in high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient clamping in PV inverters and telecom rectifiers
R_DS(on) max @ 10 V	0.123 Ω - enables ≤ 49 W conduction loss at 28 A continuous drain current in thermally managed layouts
Q_g typ.	33 nC - reduces gate driver power demand and allows use of lower-cost 1-A peak drivers in 100–300 kHz LLC controllers
trr typ.	142 ns - minimizes dead-time-induced shoot-through risk and diode recovery loss in phase-shifted full-bridge converters
E_AS	691 mJ - provides single-pulse unclamped inductive switching robustness for motor drive and welding auxiliary circuits
C_oss typ.	123 pF - contributes to low output energy (E_oss = 98 μJ at 480 V), critical for ZVS turn-on efficiency
I_D cont. @ T_C = 100 °C	18 A - defines usable current envelope in compact heatsinked industrial power modules operating at elevated ambient

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant footprint (9.65 mm × 10.67 mm × 4.83 mm). Thermal resistance R_thJC = 0.5 °C/W enables direct PCB copper pour heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level drive; low input capacitance (C_iss = 2714 pF) reduces Miller-induced oscillation risk
D (Drain)	High-side power terminal	Internally connected to exposed thermal pad; must be routed to primary-side ground plane for optimal EMI and thermal performance
S (Source)	Reference node / return path	Serves as local ground reference for gate driver; requires low-inductance connection to minimize V_GS ringing during fast switching

Key Features

Feature	Design Value
Fast body diode (EF series)	trr = 142 ns and Q_rr = 0.97 μC reduce reverse recovery loss by >40 % vs. standard MOSFETs in LLC resonant tanks
Low R_DS(on) × Q_g FOM	3.3 Ω·nC - improves combined conduction/switching efficiency in 200–500 kHz SMPS, directly lowering system thermal load
Avalanche energy rated (UIS)	E_AS = 691 mJ - eliminates need for external snubbers in inductive load switching, simplifying BOM in battery charger designs
Low C_rss (6 pF)	Reduces Miller feedback, enabling stable 10 V gate drive without negative voltage turn-off in high dv/dt environments (>50 V/ns)
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for automotive-qualified production lines

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter delivering 12 V/275 A output with >96 % efficiency. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement in half-bridge LLC topology, operating at 250 kHz with ZVS turn-on. Use Value: Fast trr and low Q_rr eliminate body diode conduction loss during dead time, improving light-load efficiency by 1.2 % over standard 600 V MOSFETs.	Use Scenario: DC-link switching stage in string inverter handling 1000 V DC input and delivering 230 V AC grid output. IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC (neutral-point-clamped) inverter, switching at 16 kHz with active voltage clamping. Use Value: 600 V V_DS rating with 50 % margin over 400 V DC bus ensures reliability under IEC 62109 surge conditions; R_thJC = 0.5 °C/W enables forced-air cooling without heatsink.
Industrial Battery Charger	LED Streetlight Driver
Use Scenario: Isolated flyback controller driving 48 V/20 A charging profile for lithium-ion traction batteries in AGVs. IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback operating up to 130 kHz with valley switching. Use Value: Low Q_g (33 nC) allows direct drive from UC384x-based controllers without buffer stages, reducing component count and layout area.	Use Scenario: Buck-boost LED driver powering 100 W COB arrays in outdoor streetlights with 0–10 V dimming interface. IC Role / Device Role / Timing Role: Main switching element in constant-current buck-boost regulator operating at 125 kHz with PWM dimming synchronization. Use Value: Avalanche rating (691 mJ) withstands inductive kick from long LED string wiring, eliminating need for TVS protection on power stage.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter delivering 12 V/275 A output with >96 % efficiency.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement in half-bridge LLC topology, operating at 250 kHz with ZVS turn-on.

Use Value: Fast trr and low Q_rr eliminate body diode conduction loss during dead time, improving light-load efficiency by 1.2 % over standard 600 V MOSFETs.

Use Scenario: DC-link switching stage in string inverter handling 1000 V DC input and delivering 230 V AC grid output.

IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC (neutral-point-clamped) inverter, switching at 16 kHz with active voltage clamping.

Use Value: 600 V V_DS rating with 50 % margin over 400 V DC bus ensures reliability under IEC 62109 surge conditions; R_thJC = 0.5 °C/W enables forced-air cooling without heatsink.

Industrial Battery Charger

LED Streetlight Driver

Use Scenario: Isolated flyback controller driving 48 V/20 A charging profile for lithium-ion traction batteries in AGVs.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback operating up to 130 kHz with valley switching.

Use Value: Low Q_g (33 nC) allows direct drive from UC384x-based controllers without buffer stages, reducing component count and layout area.

Use Scenario: Buck-boost LED driver powering 100 W COB arrays in outdoor streetlights with 0–10 V dimming interface.

IC Role / Device Role / Timing Role: Main switching element in constant-current buck-boost regulator operating at 125 kHz with PWM dimming synchronization.

Use Value: Avalanche rating (691 mJ) withstands inductive kick from long LED string wiring, eliminating need for TVS protection on power stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N60FD	Higher R_DS(on) (0.145 Ω), higher Q_g (45 nC), slower trr (220 ns); same 600 V rating and D2PAK package	Lower efficiency in high-frequency ZVS topologies; requires larger gate driver due to higher Q_g	Preferred where cost sensitivity outweighs efficiency targets and thermal headroom exists
IXFH28N60X3	Lower R_DS(on) (0.105 Ω), higher Q_g (52 nC), no specified Q_rr/trr data; TO-247 package	Superior conduction loss but higher switching loss and incompatible footprint; needs PCB redesign	Selected when maximum continuous current (32 A) and junction temperature margin (175 °C) are prioritized over layout reuse

Compared with STW28N60FD and IXFH28N60X3, SIHB28N60EF-GE3 offers the best balance of low Q_rr, moderate Q_g, and D2PAK compatibility-enabling drop-in upgrades in existing LLC and phase-shifted bridge designs without thermal or layout compromise.

Availability

SIHB28N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHB28N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF series is designed specifically for high-frequency, soft-switching power conversion-targeting LLC resonant, phase-shifted bridge, and three-level inverter topologies in telecom, renewable energy, and industrial systems.

FAQ

What is the maximum continuous drain current for SIHB28N60EF-GE3 at 100 °C case temperature?

The SIHB28N60EF-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 28 A rating at 25 °C and is validated under steady-state conduction with proper PCB copper pour heatsinking. Designers must verify junction temperature using R_thJC = 0.5 °C/W and actual power dissipation to ensure operation remains within the -55 °C to +150 °C T_J range.

Does SIHB28N60EF-GE3 have a fully characterized fast body diode?

Yes, SIHB28N60EF-GE3 includes a fully characterized fast body diode with published trr (142 ns typ.), Q_rr (0.97 μC typ.), and I_RRM (13.2 A typ.) at T_J = 25 °C. These parameters are measured under standardized conditions (IF = IS = 14 A, dI/dt = 100 A/μs, VR = 400 V) and are integral to the EF-series design for ZVS operation. The diode forward voltage V_SD is 0.9 V typ. at 11 A and 25 °C.

Can SIHB28N60EF-GE3 replace standard 600 V MOSFETs in existing phase-shifted bridge designs?

Yes, SIHB28N60EF-GE3 is a direct D2PAK footprint replacement for legacy 600 V MOSFETs with identical pinout (G-D-S) and thermal pad layout. Its lower Q_rr and faster trr improve ZVS margin and reduce body diode loss, often enabling higher frequency operation without layout changes. However, gate drive strength should be verified due to its 33 nC Q_g, which is lower than many older devices.

What is the gate-source threshold voltage range for SIHB28N60EF-GE3?

The gate-source threshold voltage V_GS(th) for SIHB28N60EF-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. The typical value is ~3.0 V, and the parameter exhibits minimal drift over temperature, supporting stable operation across the full -55 °C to +150 °C junction range.

Is SIHB28N60EF-GE3 suitable for use in solar microinverters?

Yes, SIHB28N60EF-GE3 is well-suited for solar microinverters, particularly in the DC-AC H-bridge or interleaved boost stage. Its 600 V V_DS rating accommodates 400–600 V PV string voltages with safety margin, while low Q_rr and high dV/dt immunity (70 V/ns) support efficient transformerless topologies. The device's avalanche rating and halogen-free construction meet IEC 62109 and RoHS requirements for residential solar deployments.

SIHB28N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 123mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2714 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

SIHB28N60EF-GE3 FAQ

1.How can I place an order for SIHB28N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB28N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB28N60EF-GE3 reliable?

The price and inventory of SIHB28N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB28N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB28N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB28N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB28N60EF-GE3?

SIHB28N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB28N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB28N60EF-GE3?

For technical support, including SIHB28N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB28N60EF-GE3 requirements.

6.How does Aetrix verify that SIHB28N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB28N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB28N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB28N60EF-GE3?

All SIHB28N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB28N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB28N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHB28N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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