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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB28N60EF-T1-GE3

Name: SIHB28N60EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHB28N60EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB28N60EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB28N60EF-T1-GE3.pdf

Description:: N-CHANNEL 600V

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Product details

Overview

SIHB28N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring fast body diode, 0.123 Ω R_DS(on) at V_GS = 10 V, 33 nC typical Q_g, and 691 mJ single-pulse avalanche energy - designed for high-efficiency LLC resonant and phase-shifted bridge converters in telecom and solar PV inverters.

For engineers reviewing the SIHB28N60EF-T1-GE3 datasheet, SIHB28N60EF-T1-GE3 pinout, SIHB28N60EF-T1-GE3 application, or SIHB28N60EF-T1-GE3 equivalent, key selection criteria include fast body diode recovery (t_rr = 142 ns typ.), low Q_rr (0.97 μC), reduced switching losses in ZVS topologies, and thermal robustness with R_thJC = 0.5 °C/W.

Technical Context

This EF-series MOSFET employs optimized planar VDMOS structure with tailored body diode dynamics to minimize reverse recovery charge and peak current during hard-commutation. Its gate charge profile supports precise timing control in resonant converters, with Q_gd/Q_g ratio of ~41% enabling stable zero-voltage switching across wide load ranges.

The device integrates an avalanche-rated integral body diode with I_RRM = 13.2 A and dV/dt immunity up to 50 V/ns, making it suitable for unclamped inductive switching in 3-level inverters and AC/DC bridge configurations where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 3-phase rectified systems with margin for transients.
R_DS(on) max @ V_GS = 10 V	0.123 Ω - Enables <2.5 W conduction loss at 14 A continuous drain current in thermally managed designs.
Q_g typ.	33 nC - Reduces gate drive power and enables use of lower-current drivers in high-frequency SMPS (>100 kHz).
t_rr typ.	142 ns - Limits diode reverse recovery stress on synchronous rectifiers and adjacent switches in half-bridge layouts.
E_AS	691 mJ - Supports reliable operation under unclamped inductive switching events without derating in welder or charger applications.
C_iss	2714 pF - Low input capacitance improves gate drive efficiency and reduces Miller-induced turn-on risk in high-dV/dt environments.
R_thJC	0.5 °C/W - Allows >200 W power dissipation with standard heatsink mounting, critical for compact server PSU designs.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-pin configuration (G, D, S); drain connected to exposed copper tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; low C_iss and Q_g enable fast, low-loss switching with minimal driver overhead.
D (Drain)	High-side power terminal	Connected to internal die backside and external thermal pad; must be electrically isolated from PCB ground when used in high-side configuration.
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; ties to power ground in low-side switch topology.

Key Features

Feature	Design Value
Fast body diode	Reduces t_rr by 40% vs. standard E-series MOSFETs, lowering diode-induced voltage spikes and EMI in LLC converters.
Low Q_rr (0.97 μC)	Minimizes energy loss during body diode commutation, directly improving efficiency in phase-shifted full-bridge topologies.
Avalanche-rated (E_AS = 691 mJ)	Eliminates need for external snubbers in battery charger flyback circuits subjected to load dump transients.
Ultra-low R_DS(on) × Q_g FOM	Optimizes trade-off between conduction and switching losses for 65–300 kHz operation in telecom PSUs.
High dV/dt immunity (50 V/ns)	Prevents false turn-on in high-noise industrial motor drives using 3-level NPC inverters.

Applications

Telecom Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW LLC resonant DC/DC converter for 48 V intermediate bus generation. IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS, leveraging fast body diode for dead-time conduction. Use Value: 142 ns t_rr and 0.97 μC Q_rr reduce switching node ringing and improve light-load efficiency by 1.2% over standard 600 V MOSFETs.	Use Scenario: Upper-leg switch in three-phase 10 kW string inverter H-bridge stage handling 600 V DC link. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET conducting during PWM active periods; body diode handles freewheeling in complementary half-cycle. Use Value: 691 mJ E_AS rating ensures reliability under grid fault conditions with unclamped inductive energy dissipation.
Industrial Battery Charger	HID Lighting Ballast
Use Scenario: Switching element in resonant LLC charger for 48 V/100 Ah LiFePO₄ battery banks with constant-current/constant-voltage regulation. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via variable frequency modulation; body diode conducts during resonant tank zero-crossings. Use Value: 0.123 Ω R_DS(on) limits conduction loss to <1.8 W at 20 A, enabling natural convection cooling in sealed enclosures.	Use Scenario: Half-bridge switch in electronic ballast driving 250 W metal halide lamp with 300 V AC output. IC Role / Device Role / Timing Role: High-frequency (70–120 kHz) switching transistor managing lamp ignition and steady-state regulation; withstands high dv/dt during arc striking. Use Value: 50 V/ns reverse diode dV/dt rating prevents spurious turn-on during lamp ignition transients exceeding 1 kV/μs.

Telecom Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW LLC resonant DC/DC converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS, leveraging fast body diode for dead-time conduction.

Use Value: 142 ns t_rr and 0.97 μC Q_rr reduce switching node ringing and improve light-load efficiency by 1.2% over standard 600 V MOSFETs.

Use Scenario: Upper-leg switch in three-phase 10 kW string inverter H-bridge stage handling 600 V DC link.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET conducting during PWM active periods; body diode handles freewheeling in complementary half-cycle.

Use Value: 691 mJ E_AS rating ensures reliability under grid fault conditions with unclamped inductive energy dissipation.

Industrial Battery Charger

HID Lighting Ballast

Use Scenario: Switching element in resonant LLC charger for 48 V/100 Ah LiFePO₄ battery banks with constant-current/constant-voltage regulation.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via variable frequency modulation; body diode conducts during resonant tank zero-crossings.

Use Value: 0.123 Ω R_DS(on) limits conduction loss to <1.8 W at 20 A, enabling natural convection cooling in sealed enclosures.

Use Scenario: Half-bridge switch in electronic ballast driving 250 W metal halide lamp with 300 V AC output.

IC Role / Device Role / Timing Role: High-frequency (70–120 kHz) switching transistor managing lamp ignition and steady-state regulation; withstands high dv/dt during arc striking.

Use Value: 50 V/ns reverse diode dV/dt rating prevents spurious turn-on during lamp ignition transients exceeding 1 kV/μs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N60FD	Higher R_DS(on) (0.14 Ω), higher Q_rr (1.3 μC), same 600 V rating and D2PAK package.	Less suited for high-frequency LLC due to slower body diode; better for lower-frequency hard-switched PFC stages.	Choose STW28N60FD only if cost sensitivity outweighs efficiency targets above 150 kHz.
IXFH28N60P	Higher Q_g (52 nC), higher R_DS(on) (0.135 Ω), identical avalanche rating but no fast-body-diode optimization.	Requires stronger gate driver and exhibits higher switching losses in ZVS topologies; preferred for ruggedized industrial UPS.	Select IXFH28N60P when system-level robustness against repetitive avalanche events takes priority over peak efficiency.

Compared with STW28N60FD and IXFH28N60P, SIHB28N60EF-T1-GE3 delivers superior ZVS performance in resonant converters due to its lower Q_rr and optimized body diode, while maintaining identical 600 V/28 A ratings and D2PAK footprint - enabling drop-in replacement where fast recovery is critical.

Availability

SIHB28N60EF-T1-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term production continuity.

Supply support for SIHB28N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The EF Series targets high-efficiency switched-mode power conversion, specifically engineered for resonant topologies requiring fast, low-loss body diode operation and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHB28N60EF-T1-GE3 at 100 °C case temperature?

The SIHB28N60EF-T1-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual board layout and heatsinking in the target application. The SIHB28N60EF-T1-GE3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHB28N60EF-T1-GE3 support logic-level gate drive?

No, SIHB28N60EF-T1-GE3 is not a logic-level MOSFET; its gate threshold voltage range is 2.0–4.0 V, but it is characterized and optimized for 10 V gate drive. Full R_DS(on) specification (0.123 Ω) requires V_GS = 10 V, and gate charge parameters (Q_g, Q_gd) are tested at this voltage. Using 5 V drive results in significantly higher on-resistance and unreliable switching behavior.

What is the thermal resistance from junction to case (R_thJC) for SIHB28N60EF-T1-GE3?

The SIHB28N60EF-T1-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.5 °C/W, measured from die junction to the drain-connected thermal pad. This value assumes proper soldering of the exposed pad to a sufficiently sized copper area per Vishay's recommended footprint (Document 73397). The SIHB28N60EF-T1-GE3 achieves this low R_thJC via direct die-to-tab construction in the D2PAK package.

Can SIHB28N60EF-T1-GE3 replace SIHB28N60E in existing designs?

Yes, SIHB28N60EF-T1-GE3 is a direct functional upgrade to SIHB28N60E, sharing identical pinout, package, voltage/current ratings, and thermal specs, but with enhanced body diode performance (lower t_rr, Q_rr, and I_RRM). No PCB changes are required, and the SIHB28N60EF-T1-GE3 improves efficiency in resonant and phase-shifted topologies without altering gate drive or layout.

What is the typical reverse recovery charge (Q_rr) of SIHB28N60EF-T1-GE3 and how is it measured?

The SIHB28N60EF-T1-GE3 has a typical reverse recovery charge (Q_rr) of 0.97 μC, measured at T_J = 25 °C with I_F = I_S = 14 A, dI/dt = 100 A/μs, and V_R = 400 V. This parameter quantifies stored charge in the body diode during turn-off and directly impacts switching loss and voltage overshoot. The SIHB28N60EF-T1-GE3's low Q_rr is a key differentiator versus standard 600 V MOSFETs.

SIHB28N60EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 123mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2714 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB28N60EF-T1-GE3 FAQ

1.How can I place an order for SIHB28N60EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB28N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB28N60EF-T1-GE3 reliable?

The price and inventory of SIHB28N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB28N60EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB28N60EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB28N60EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB28N60EF-T1-GE3?

SIHB28N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB28N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB28N60EF-T1-GE3?

For technical support, including SIHB28N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB28N60EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHB28N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB28N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB28N60EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB28N60EF-T1-GE3?

All SIHB28N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB28N60EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB28N60EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHB28N60EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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