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Vishay Siliconix SIHB28N60EF-T5-GE3
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- Part No.:
- SIHB28N60EF-T5-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB28N60EF-T5-GE3.pdf
- Description:
- N-CHANNEL 600V
- Quantity:
- Payment:
- Shipping:
Inventory:800
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Product details
Overview
SIHB28N60EF-T5-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring ultra-low gate charge (33 nC typ.), fast body diode (trr = 142 ns typ.), and low RDS(on) of 0.107 Ω at VGS = 10 V. It is engineered for high-efficiency, high-frequency switching in telecom and solar PV inverters using LLC and phase-shifted bridge topologies.
For engineers reviewing the SIHB28N60EF-T5-GE3 datasheet, SIHB28N60EF-T5-GE3 pinout, SIHB28N60EF-T5-GE3 application, or SIHB28N60EF-T5-GE3 equivalent, key selection criteria include its 691 mJ single-pulse avalanche energy rating, 0.5 °C/W junction-to-case thermal resistance, and reduced Qrr (0.97 μC typ.) enabling ZVS operation with minimal diode recovery loss.
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to minimize reverse recovery charge (Qrr) and peak reverse recovery current (IRRM = 13.2 A), directly supporting zero-voltage-switching (ZVS) in resonant converters. Its low Ciss (2714 pF) and Crss (6 pF) reduce Miller effect and improve gate drive efficiency.
The device integrates an avalanche-rated integral body diode with dV/dt immunity up to 50 V/ns and supports continuous ID = 28 A at TC = 25 °C. Its RDS(on) exhibits +0.76 V/°C temperature coefficient, enabling stable conduction across -55 °C to +150 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands DC bus voltages up to 480 V in PV inverters and telecom rectifiers without derating. |
| RDS(on) max | 0.123 Ω @ VGS = 10 V - Enables <1.7 W conduction loss at 14 A, critical for high-power-density SMPS designs. |
| Qg typ. | 33 nC - Reduces gate drive power and enables >500 kHz switching in LLC resonant converters. |
| trr typ. | 142 ns - Limits diode recovery time to <150 ns, minimizing shoot-through risk in half-bridge configurations. |
| EAS | 691 mJ - Supports unclamped inductive switching in welding and battery charger applications without failure. |
| RthJC | 0.5 °C/W - Allows direct heatsink mounting for 250 W dissipation with <125 °C junction rise above case. |
| Qrr typ. | 0.97 μC - Low stored charge reduces turn-off losses and EMI generation in ZVS topologies. |
Pinout & Package
D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount configuration optimized for high-current PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≤±30 V drive; low input capacitance (Ciss = 2714 pF) eases gate driver selection. |
| D | Drain | Main high-side power terminal; electrically and thermally connected to exposed copper pad for low-inductance, high-current return path. |
| S | Source | Reference node for gate drive and current sensing; ties to power ground plane; hosts integral fast-recovery body diode anode. |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 142 ns and Qrr = 0.97 μC enable reliable ZVS in phase-shifted full-bridge converters without external diodes. |
| Low FOM (RDS(on) × Qg) | 3.55 Ω·nC - Balances conduction and switching loss for optimal efficiency in 100–300 kHz telecom PSUs. |
| Avalanche rated | 691 mJ single-pulse energy withstand allows robust operation under transient overloads in industrial welders. |
| Ultra-low Crss | 6 pF - Minimizes Miller feedback, improving dv/dt immunity and reducing gate oscillation risk in high-dV/dt environments. |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912 for green manufacturing. |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: High-efficiency 3 kW server PSU using interleaved LLC resonant topology with 48 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge LLC power stage, switching at 350 kHz. Use Value: Low Qrr and trr suppress body-diode reverse recovery loss, increasing full-load efficiency by 0.8% vs. standard 600 V MOSFETs. | Use Scenario: String-level 5 kW grid-tied solar inverter with three-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switching device in T-type inverter leg, handling 600 V DC link voltage. Use Value: 600 V VDS rating and 0.5 °C/W RthJC support 100% duty-cycle operation during MPPT transients without thermal runaway. |
| LED Driver | Battery Charger |
Use Scenario: Constant-current 400 W outdoor LED streetlight driver with active PFC + flyback. IC Role / Device Role / Timing Role: PFC boost switch operating in continuous conduction mode (CCM) at 65 kHz. Use Value: Low RDS(on) (0.107 Ω) minimizes conduction loss in high-current boost inductor path, sustaining >96% PFC efficiency. | Use Scenario: 3 kW EV on-board charger with dual-phase interleaved AC/DC front-end. IC Role / Device Role / Timing Role: Active clamp switch in asymmetrical half-bridge configuration for soft-switched rectification. Use Value: Avalanche energy rating (691 mJ) ensures safe clamping during line surges and battery disconnect events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW28N60FD | RDS(on) = 0.135 Ω, Qg = 42 nC, trr = 170 ns, same D2PAK package | Higher Qrr (1.2 μC) increases turn-off loss in ZVS designs; lower avalanche rating (520 mJ) | Acceptable for non-ZVS hard-switched SMPS where diode recovery is less critical. |
| IXFH28N60X3 | RDS(on) = 0.115 Ω, Qg = 38 nC, trr = 130 ns, TO-247 package | Superior trr but larger TO-247 footprint; no surface-mount compatibility | Preferred for prototyping or low-volume thermal-limited designs requiring maximum diode speed. |
Compared with STW28N60FD and IXFH28N60X3, SIHB28N60EF-T5-GE3 delivers the best balance of low-profile D2PAK packaging, industry-leading Qg/trr trade-off, and production-ready halogen-free compliance-making it optimal for volume-manufactured telecom and solar systems demanding both efficiency and manufacturability.
Availability
SIHB28N60EF-T5-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SIHB28N60EF-T5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF Series MOSFETs are designed specifically for high-frequency, high-efficiency resonant and soft-switching power converters-including LLC, phase-shifted bridge, and 3-level inverters-where fast body diode performance is essential.
FAQ
What is the maximum continuous drain current rating for SIHB28N60EF-T5-GE3 at 100 °C case temperature?
The SIHB28N60EF-T5-GE3 supports 18 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation in enclosed power modules without forced airflow. The 28 A rating applies only at TC = 25 °C.
Does SIHB28N60EF-T5-GE3 have a qualified avalanche rating, and what is its test condition?
Yes, SIHB28N60EF-T5-GE3 is fully avalanche rated with a single-pulse EAS of 691 mJ. Testing follows JEDEC standard JESD24-1: VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A. This rating validates ruggedness in inductive load switching and transient overload conditions.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHB28N60EF-T5-GE3, and why does it matter?
The SIHB28N60EF-T5-GE3 has a typical Qrr of 0.97 μC at TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs, VR = 400 V. This low value directly reduces turn-off switching loss and EMI in bridge circuits, especially critical for ZVS operation in LLC and phase-shifted topologies where diode recovery dominates total loss.
Is SIHB28N60EF-T5-GE3 compatible with lead-free reflow soldering processes?
Yes, SIHB28N60EF-T5-GE3 is lead (Pb)-free and halogen-free, qualified for standard Pb-free reflow profiles with peak temperature up to 300 °C for 10 seconds. Its D2PAK package meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1, eliminating bake requirements before assembly.
How does the gate charge profile of SIHB28N60EF-T5-GE3 impact gate driver selection?
The SIHB28N60EF-T5-GE3 has a total gate charge (Qg) of 33 nC typ. at VGS = 10 V, with Qgd = 33 nC and Qgs = 17 nC. This low, well-separated charge distribution simplifies gate driver design-enabling use of cost-effective 1-A drivers (e.g., UCC27531) while maintaining clean 24 ns turn-on delay and 82 ns turn-off delay under standard test conditions.
SIHB28N60EF-T5-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 123mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2714 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB28N60EF-T5-GE3 FAQ
1.How can I place an order for SIHB28N60EF-T5-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB28N60EF-T5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB28N60EF-T5-GE3 reliable?
The price and inventory of SIHB28N60EF-T5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB28N60EF-T5-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB28N60EF-T5-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB28N60EF-T5-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB28N60EF-T5-GE3?
SIHB28N60EF-T5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB28N60EF-T5-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB28N60EF-T5-GE3?
For technical support, including SIHB28N60EF-T5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB28N60EF-T5-GE3 requirements.
6.How does Aetrix verify that SIHB28N60EF-T5-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB28N60EF-T5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB28N60EF-T5-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB28N60EF-T5-GE3?
All SIHB28N60EF-T5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB28N60EF-T5-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB28N60EF-T5-GE3 part is unused and in its original packaging.
Return procedure for SIHB28N60EF-T5-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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