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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB30N60E-E3

Name: SIHB30N60E-E3
Brand: Vishay Siliconix
SKU: SIHB30N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB30N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB30N60E-E3.pdf

Description:: MOSFET N-CH 600V 29A D2PAK

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Product details

Overview

SIHB30N60E-E3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC, and avalanche-rated (E_AS = 690 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHB30N60E-E3 datasheet, SIHB30N60E-E3 pinout, SIHB30N60E-E3 application, or SIHB30N60E-E3 equivalent, key selection criteria include its 600 V V_DS, low gate charge for reduced switching loss, robust UIS capability, thermal resistance of 0.5 °C/W (junct-to-case), and suitability for hard-switched 65–100 kHz power converters.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage, medium-current switching. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while low C_iss (2600 pF) and C_oss (138 pF) support fast switching with minimal Miller effect.

The integrated body diode exhibits t_rr = 402–605 ns and Q_rr = 7–15 μC at 15 A, enabling use in synchronous rectification and freewheeling paths where controlled reverse recovery is critical. Its R_thJC = 0.5 °C/W enables 250 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
R_DS(on) max	0.125 Ω at V_GS = 10 V - limits conduction loss to ≤ 55 W at 21 A RMS in continuous mode
Q_g max	130 nC - determines gate drive power requirement (~1.3 mW per MHz at 10 V swing)
E_AS	690 mJ - enables unclamped inductive switching without failure under specified test conditions
I_D cont @ T_C=100°C	18 A - defines usable current limit in thermally constrained heatsink environments
R_thJC	0.5 °C/W - allows junction temperature rise of only 90 °C at 180 W dissipation
t_rr	402–605 ns - impacts snubber sizing and EMI generation during diode commutation

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires <130 nC charge to fully enhance channel
D (Drain)	High-voltage output terminal	Connected to 600 V DC bus; electrically and thermally tied to exposed metal tab
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; carries full load current

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.25 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz converters
Avalanche energy rating	690 mJ - eliminates need for external clamping in inductive load switching applications
Low C_iss and C_oss	2600 pF / 138 pF - reduces gate drive burden and improves dV/dt immunity up to 70 V/ns
Body diode Q_rr	7–15 μC - enables predictable recovery behavior in PFC and half-bridge topologies
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709A - supports green manufacturing requirements

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 80+ Titanium-certified 1–3 kW server PSUs operating at 75–100 kHz. IC Role / Device Role / Timing Role: High-voltage switch in LLC resonant converter half-bridge leg, handling 400 V DC input. Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; avalanche rating withstands transformer leakage inductance spikes.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Upper switch in three-phase IGBT/MOSFET bridge, switching at 16–20 kHz with active clamping. Use Value: 600 V rating covers 1000 V DC max with margin; low Q_g enables efficient gate driving at elevated temperatures.
PFC Boost Converter	Industrial Motor Drive
Use Scenario: Continuous-conduction-mode (CCM) boost stage in telecom rectifiers delivering 3.3 kW at >98 % efficiency. IC Role / Device Role / Timing Role: Main switching transistor in single-phase interleaved PFC, operating at 65 kHz with ZVS assist. Use Value: Low C_oss and Q_gd reduce switching loss and improve ZVS range; body diode t_rr supports bidirectional current flow during dead time.	Use Scenario: Inverter output stage in 5–7.5 kW HVAC drives using space-vector PWM at 8–12 kHz. IC Role / Device Role / Timing Role: Phase-leg high-side switch in 650 V DC bus inverter, requiring rugged short-circuit capability. Use Value: Rated for 76 A pulsed drain current and 690 mJ avalanche energy - sustains fault conditions without latch-up or second breakdown.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 80+ Titanium-certified 1–3 kW server PSUs operating at 75–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switch in LLC resonant converter half-bridge leg, handling 400 V DC input.

Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; avalanche rating withstands transformer leakage inductance spikes.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Upper switch in three-phase IGBT/MOSFET bridge, switching at 16–20 kHz with active clamping.

Use Value: 600 V rating covers 1000 V DC max with margin; low Q_g enables efficient gate driving at elevated temperatures.

PFC Boost Converter

Industrial Motor Drive

Use Scenario: Continuous-conduction-mode (CCM) boost stage in telecom rectifiers delivering 3.3 kW at >98 % efficiency.

IC Role / Device Role / Timing Role: Main switching transistor in single-phase interleaved PFC, operating at 65 kHz with ZVS assist.

Use Value: Low C_oss and Q_gd reduce switching loss and improve ZVS range; body diode t_rr supports bidirectional current flow during dead time.

Use Scenario: Inverter output stage in 5–7.5 kW HVAC drives using space-vector PWM at 8–12 kHz.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in 650 V DC bus inverter, requiring rugged short-circuit capability.

Use Value: Rated for 76 A pulsed drain current and 690 mJ avalanche energy - sustains fault conditions without latch-up or second breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 28 A, R_DS(on) = 0.13 Ω, Q_g = 110 nC, D²PAK package	Lower Q_g but higher R_DS(on); slightly lower avalanche rating (E_AS = 620 mJ)	Better for high-frequency, low-loss gate drive; less robust under repetitive inductive transients
IXTH30N60L2	600 V, 30 A, R_DS(on) = 0.115 Ω, Q_g = 145 nC, TO-247 package	Higher current rating and lower R_DS(on), but larger TO-247 package and higher Q_g	Preferred for higher-power, forced-air-cooled systems where board space permits larger footprint

Compared with STW30NM60ND and IXTH30N60L2, SIHB30N60E-E3 offers the best balance of avalanche ruggedness, thermal resistance (0.5 °C/W), and surface-mount compatibility - making it optimal for compact, high-reliability industrial and renewable energy power stages.

Availability

SIHB30N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB30N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power devices.

The E Series Power MOSFETs, including SIHB30N60E-E3, are engineered for high-voltage switching in telecom, industrial, and renewable energy systems where low conduction loss, fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for SIHB30N60E-E3 at 100 °C case temperature?

The SIHB30N60E-E3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be validated against actual PCB layout and heatsinking in the target application. The SIHB30N60E-E3 maintains safe operation within its SOA when operated within this limit under proper thermal management.

Does SIHB30N60E-E3 have a fully rated avalanche capability?

Yes, the SIHB30N60E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 690 mJ under defined test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This rating is not repetitive and applies only to non-repetitive inductive switching events. The SIHB30N60E-E3 is designed to survive such events without parameter degradation, provided junction temperature remains within −55 °C to +150 °C limits.

What is the typical gate threshold voltage range for SIHB30N60E-E3?

The SIHB30N60E-E3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHB30N60E-E3 exhibits a positive temperature coefficient for V_GS(th), increasing stability at elevated temperatures.

Can SIHB30N60E-E3 be used in synchronous rectification topologies?

The SIHB30N60E-E3 integrates a body diode with t_rr = 402–605 ns and Q_rr = 7–15 μC at 15 A, making it suitable for synchronous rectification in medium-frequency flyback or forward converters where controlled reverse recovery is required. However, its body diode is not optimized for ultra-fast recovery like dedicated SR MOSFETs, so the SIHB30N60E-E3 is best applied where moderate t_rr is acceptable and avalanche capability is prioritized.

What is the thermal resistance from junction to case for SIHB30N60E-E3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHB30N60E-E3 is 0.5 °C/W, measured from junction to the drain tab. This low value enables high-power operation with minimal temperature rise when mounted on adequately sized copper areas. For accurate thermal design, the SIHB30N60E-E3 requires soldering the exposed drain pad to ≥ 10 cm² of 2 oz copper with thermal vias to internal ground planes.

SIHB30N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB30N60E-E3 FAQ

1.How can I place an order for SIHB30N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB30N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB30N60E-E3 reliable?

The price and inventory of SIHB30N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB30N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHB30N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB30N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB30N60E-E3?

SIHB30N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB30N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB30N60E-E3?

For technical support, including SIHB30N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB30N60E-E3 requirements.

6.How does Aetrix verify that SIHB30N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHB30N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB30N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHB30N60E-E3?

All SIHB30N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB30N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB30N60E-E3 part is unused and in its original packaging.

Return procedure for SIHB30N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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