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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB30N60ET1-GE3

Name: SIHB30N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB30N60ET1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB30N60ET1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB30N60ET1-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHB30N60ET1-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC, and avalanche-rated operation. It delivers low conduction and switching losses for high-efficiency power conversion in telecom rectifiers and PFC stages.

For engineers reviewing the SIHB30N60ET1-GE3 datasheet, SIHB30N60ET1-GE3 pinout, SIHB30N60ET1-GE3 application, or SIHB30N60ET1-GE3 equivalent, key selection criteria include its 600 V blocking rating, 0.125 Ω on-resistance at 10 V gate drive, 130 nC total gate charge, UIS-rated ruggedness, and D2PAK thermal performance with R_thJC = 0.5 °C/W.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage SMPS topologies. Its low C_iss (2600 pF) and ultra-low Q_gd/Q_g ratio (39/130 nC) reduce Miller-induced switching instability and enable fast, controllable turn-off in hard-switched converters.

The integrated body diode supports synchronous rectification and freewheeling functions, with t_rr = 605 ns and Q_rr = 15 μC at 25 °C - parameters critical for minimizing commutation loss and voltage overshoot in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin against transients in industrial and telecom power supplies
R_DS(on) max	0.125 Ω at V_GS = 10 V - enables <1.8 W conduction loss at 15 A continuous drain current in PFC boost stages
Q_g max	130 nC - determines gate driver power requirement and influences minimum achievable switching frequency in 100–300 kHz SMPS
E_AS	690 mJ - ensures single-pulse unclamped inductive switching survivability in motor drive H-bridge snubberless operation
R_thJC	0.5 °C/W - allows 250 W power dissipation with ≤125 °C junction rise above case, supporting forced-air-cooled 1–3 kW systems
t_rr	605 ns - defines maximum practical dead-time setting to avoid shoot-through while limiting diode recovery voltage spike
I_D cont @ T_C=100°C	18 A - sets thermal design envelope for heatsink sizing in enclosed 1U server PSU applications

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low-thermal-resistance mounting to heatsink. Standard 3-lead configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Accepts 10 V logic-level gate drive; requires ≥1 W peak driver capability due to 130 nC Q_g
D	High-side power terminal	Connected to heatsink via soldered tab; carries full load current and must be isolated from other potentials
S	Reference node	Serves as return path for gate drive and sense resistor; layout must minimize inductance to suppress ringing during dI/dt > 100 A/μs

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	16.25 Ω·nC - improves efficiency trade-off between conduction and switching loss in 100–200 kHz PFC circuits
Avalanche energy rated (UIS)	690 mJ - eliminates need for external clamping in inductive load switching, reducing BOM count in welding inverters
Ultra-low Q_gd	39 nC - minimizes Miller plateau duration, enabling clean turn-off even with moderate gate resistance (R_g = 25 Ω)
Low C_iss	2600 pF - reduces capacitive loading on gate driver ICs and eases EMI filter design in EMI-critical LED drivers
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - supports export compliance for EU/China industrial equipment

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U 1.5 kW telecom rectifier. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, operating at 200 kHz with ZVS-assisted turn-on. Use Value: 0.125 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A, while 130 nC Q_g enables robust gate drive with standard 2 A peak drivers.	Use Scenario: DC-link switching device in string-level PV inverter stage converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase NPC topology, requiring 600 V blocking and fast diode recovery. Use Value: 605 ns t_rr and 15 μC Q_rr reduce commutation loss by ~30 % vs. legacy 650 V MOSFETs, improving inverter efficiency at partial load.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Upper-leg switch in 3 kW induction motor inverter driving HVAC compressors. IC Role / Device Role / Timing Role: High-side switching element in 600 V, 15 A three-phase bridge with 10 kHz PWM modulation. Use Value: 690 mJ E_AS rating withstands unclamped inductive kickback during fault conditions without desaturation protection circuitry.	Use Scenario: Primary switch in 150 W constant-current LED driver using flyback topology with 400 V DC bus. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 50 % duty cycle and 100 V/ns dV/dt stress. Use Value: 70 V/ns dV/dt rating ensures reliable operation under high dv/dt noise in outdoor lighting environments with long cable runs.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U 1.5 kW telecom rectifier.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, operating at 200 kHz with ZVS-assisted turn-on.

Use Value: 0.125 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A, while 130 nC Q_g enables robust gate drive with standard 2 A peak drivers.

Use Scenario: DC-link switching device in string-level PV inverter stage converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase NPC topology, requiring 600 V blocking and fast diode recovery.

Use Value: 605 ns t_rr and 15 μC Q_rr reduce commutation loss by ~30 % vs. legacy 650 V MOSFETs, improving inverter efficiency at partial load.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Upper-leg switch in 3 kW induction motor inverter driving HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching element in 600 V, 15 A three-phase bridge with 10 kHz PWM modulation.

Use Value: 690 mJ E_AS rating withstands unclamped inductive kickback during fault conditions without desaturation protection circuitry.

Use Scenario: Primary switch in 150 W constant-current LED driver using flyback topology with 400 V DC bus.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 50 % duty cycle and 100 V/ns dV/dt stress.

Use Value: 70 V/ns dV/dt rating ensures reliable operation under high dv/dt noise in outdoor lighting environments with long cable runs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 29 A, R_DS(on) = 0.135 Ω, Q_g = 110 nC, D²PAK package	Lower Q_g but higher R_DS(on); slightly better switching loss, worse conduction loss	Preferred where gate drive power budget is constrained but heatsinking is ample
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.145 Ω, Q_g = 125 nC, TO-247 package	Larger TO-247 package; higher R_thJC (0.65 °C/W); same voltage rating, lower efficiency at high current	Used when existing PCB layout accommodates TO-247 and mechanical mounting differs

Compared with STW30NM60ND and IXFH30N60P, SIHB30N60ET1-GE3 offers the lowest R_DS(on) × Q_g figure-of-merit (16.25 Ω·nC), making it optimal for thermally constrained, high-frequency PFC and SMPS where both conduction and switching losses must be minimized simultaneously.

Availability

SIHB30N60ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHB30N60ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems - emphasizing ruggedness, low FOM, and avalanche capability for mission-critical operation.

FAQ

What is the maximum continuous drain current for SIHB30N60ET1-GE3 at 100 °C case temperature?

The SIHB30N60ET1-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 29 A rating at 25 °C and must be used with appropriate heatsinking to maintain junction temperature ≤150 °C. The SIHB30N60ET1-GE3 datasheet confirms this limit under pulsed and repetitive conditions with proper PCB copper area and airflow.

Does SIHB30N60ET1-GE3 have avalanche capability, and how is it rated?

Yes, SIHB30N60ET1-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 690 mJ at T_J = 25 °C. This rating is validated per JEDEC standard JESD24-1 and allows the SIHB30N60ET1-GE3 to safely absorb inductive energy without external snubbers in motor drive and welding applications. The test condition uses L = 28.2 mH, I_AS = 7 A, and R_g = 25 Ω.

What is the gate threshold voltage range for SIHB30N60ET1-GE3, and how does it affect drive requirements?

The SIHB30N60ET1-GE3 has a gate-source threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, confirming it is a standard-level (not logic-level) MOSFET. Reliable enhancement-mode operation requires V_GS ≥ 10 V, as R_DS(on) is specified at that level. Driving the SIHB30N60ET1-GE3 below 8 V risks incomplete turn-on and excessive conduction loss, so gate drivers must deliver stable 10–15 V with ≥2 A peak current.

How does the body diode performance of SIHB30N60ET1-GE3 compare to typical 600 V MOSFETs?

The SIHB30N60ET1-GE3 body diode exhibits t_rr = 402–605 ns and Q_rr = 7–15 μC at 25 °C, which is competitive among Gen 4 600 V superjunction MOSFETs. Its reverse recovery characteristics are optimized for hard-switched PFC and bridge-leg operation, and the SIHB30N60ET1-GE3 datasheet specifies these values under standardized conditions (I_F = 15 A, dI/dt = 100 A/μs, V_R = 20 V), enabling accurate loss modeling.

Is SIHB30N60ET1-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHB30N60ET1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the Soldering Recommendations section. The "-GE3" suffix denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. The SIHB30N60ET1-GE3 package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level MSL-1.

SIHB30N60ET1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB30N60ET1-GE3 FAQ

1.How can I place an order for SIHB30N60ET1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB30N60ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB30N60ET1-GE3 reliable?

The price and inventory of SIHB30N60ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB30N60ET1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB30N60ET1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB30N60ET1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB30N60ET1-GE3?

SIHB30N60ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB30N60ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB30N60ET1-GE3?

For technical support, including SIHB30N60ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB30N60ET1-GE3 requirements.

6.How does Aetrix verify that SIHB30N60ET1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB30N60ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB30N60ET1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB30N60ET1-GE3?

All SIHB30N60ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB30N60ET1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB30N60ET1-GE3 part is unused and in its original packaging.

Return procedure for SIHB30N60ET1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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