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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB30N60ET5-GE3

Name: SIHB30N60ET5-GE3
Brand: Vishay Siliconix
SKU: SIHB30N60ET5-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB30N60ET5-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB30N60ET5-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHB30N60ET5-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for high-efficiency switch-mode power supplies and PFC stages with R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC, and avalanche-rated E_AS = 690 mJ. It delivers low conduction and switching losses in telecom rectifiers and solar inverters.

For engineers reviewing the SIHB30N60ET5-GE3 datasheet, SIHB30N60ET5-GE3 pinout, SIHB30N60ET5-GE3 application, or SIHB30N60ET5-GE3 equivalent, key selection criteria include its 600 V blocking capability, 0.125 Ω on-resistance at 10 V gate drive, 130 nC total gate charge, 690 mJ unclamped inductive switching energy rating, and D2PAK thermal performance with R_thJC = 0.5 °C/W.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide thickness to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ~16.25 Ω·nC. Its body diode exhibits t_rr = 402–605 ns and Q_rr = 7–15 μC under 100 A/μs dI/dt, enabling robust hard-switching operation in continuous conduction mode (CCM) PFC.

The device features graded doping profiles for uniform electric field distribution up to 80 % V_DS, supporting dV/dt immunity of 70 V/ns. Its SOA is limited by R_DS(on) at low V_DS and by BVDSS at high V_DS, with safe single-pulse operation up to 76 A at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % margin for voltage transients in industrial SMPS
R_DS(on) max	0.125 Ω @ V_GS = 10 V - enables ≤ 22 W conduction loss at 15 A continuous drain current
Q_g max	130 nC - determines gate driver power requirement and switching speed in 100 kHz–300 kHz PFC stages
E_AS	690 mJ - ensures reliable unclamped inductive switching during startup/fault conditions without failure
I_D cont @ T_C = 100 °C	18 A - defines usable current in thermally constrained enclosures with forced air cooling
R_thJC max	0.5 °C/W - allows ≥ 250 W power dissipation with ≤ 125 °C junction rise above case temperature
t_rr	402–605 ns - impacts diode recovery loss and EMI generation in bridge-leg configurations

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant outline per document 73397. Thermal pad must be soldered to PCB copper area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires < 130 nC charge to fully enhance; sensitive to ESD (±30 V rating)
D (Drain)	High-side power output	Connected to thermal pad; carries full load current and withstands 600 V transient spikes; primary heat path to PCB
S (Source)	Reference node	Common return for gate drive and load current; forms Kelvin source connection in high-accuracy current sensing layouts

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	~16.25 Ω·nC - reduces combined conduction + switching loss in high-frequency PFC designs
Avalanche energy rating	690 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Body diode Q_rr	7–15 μC - minimizes reverse recovery loss and associated voltage overshoot in half-bridge topologies
Low C_iss	2600 pF typical - eases gate driver design and improves noise immunity in high-dV/dt environments
High dV/dt immunity	70 V/ns - prevents false turn-on during fast voltage transitions in high-side switching

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with interleaved PFC and LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage operating at 100–200 kHz with 400 V DC bus. Use Value: 0.125 Ω R_DS(on) and 130 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin on 2-oz copper PCB.	Use Scenario: DC-link switching in string-level 5 kW solar inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switching device handling 600 V DC input and 50 A peak current during MPPT tracking. Use Value: 690 mJ E_AS rating ensures fault tolerance during grid disconnection events without desaturation protection circuitry.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Inverter leg in 7.5 kW HVAC compressor drive with space-constrained heatsink mounting. IC Role / Device Role / Timing Role: Low-side switching device in three-phase IGBT/MOSFET hybrid inverter with 16 kHz PWM. Use Value: R_thJC = 0.5 °C/W enables direct thermal coupling to aluminum baseplate, reducing junction temperature by 22 °C vs. TO-220 alternatives.	Use Scenario: Buck-boost LED driver for 150 W streetlight with universal AC input and constant-current regulation. IC Role / Device Role / Timing Role: Main switching transistor in active PFC + DC-DC stage operating at 65 kHz with 90–264 V AC input. Use Value: 600 V V_DS rating accommodates line surge up to 380 VAC peak without derating, ensuring CE compliance in harsh outdoor environments.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with interleaved PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage operating at 100–200 kHz with 400 V DC bus.

Use Value: 0.125 Ω R_DS(on) and 130 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin on 2-oz copper PCB.

Use Scenario: DC-link switching in string-level 5 kW solar inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switching device handling 600 V DC input and 50 A peak current during MPPT tracking.

Use Value: 690 mJ E_AS rating ensures fault tolerance during grid disconnection events without desaturation protection circuitry.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Inverter leg in 7.5 kW HVAC compressor drive with space-constrained heatsink mounting.

IC Role / Device Role / Timing Role: Low-side switching device in three-phase IGBT/MOSFET hybrid inverter with 16 kHz PWM.

Use Value: R_thJC = 0.5 °C/W enables direct thermal coupling to aluminum baseplate, reducing junction temperature by 22 °C vs. TO-220 alternatives.

Use Scenario: Buck-boost LED driver for 150 W streetlight with universal AC input and constant-current regulation.

IC Role / Device Role / Timing Role: Main switching transistor in active PFC + DC-DC stage operating at 65 kHz with 90–264 V AC input.

Use Value: 600 V V_DS rating accommodates line surge up to 380 VAC peak without derating, ensuring CE compliance in harsh outdoor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	R_DS(on) = 0.135 Ω, Q_g = 110 nC, E_AS = 520 mJ, TO-247 package	Higher thermal resistance (R_thJC = 0.85 °C/W); requires larger heatsink in same footprint	Preferred where higher peak current (IDM = 120 A) and through-hole assembly are required
IXFH30N60P	R_DS(on) = 0.145 Ω, Q_g = 105 nC, E_AS = 620 mJ, TO-247 package	Lower dV/dt immunity (50 V/ns); more susceptible to parasitic turn-on in high-noise motor drives	Selected when lower gate charge prioritized over avalanche ruggedness in cost-sensitive lighting designs

Compared with STW30NM60ND and IXFH30N60P, SIHB30N60ET5-GE3 offers superior thermal performance (R_thJC = 0.5 °C/W), higher avalanche energy (690 mJ), and surface-mount compatibility-enabling higher power density and automated assembly in space-constrained server and solar applications.

Availability

SIHB30N60ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHB30N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications including telecom rectifiers, solar inverters, and industrial PFC circuits-emphasizing low FOM, avalanche ruggedness, and thermal performance.

FAQ

What is the maximum continuous drain current for SIHB30N60ET5-GE3 at 100 °C case temperature?

The SIHB30N60ET5-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and must be validated against actual board layout and airflow conditions in the final design. The SIHB30N60ET5-GE3 datasheet confirms this rating applies under steady-state conduction with proper heatsinking.

Does SIHB30N60ET5-GE3 have a built-in body diode, and what are its key recovery parameters?

Yes, SIHB30N60ET5-GE3 integrates a monolithic body diode with t_rr = 402–605 ns and Q_rr = 7–15 μC at T_J = 25 °C, I_F = 15 A, dI/dt = 100 A/μs, and V_R = 20 V. These values directly impact switching loss and EMI in synchronous rectification and half-bridge topologies. The SIHB30N60ET5-GE3 body diode is rated for continuous forward current up to 29 A, matching its ID rating.

What is the gate threshold voltage range for SIHB30N60ET5-GE3, and how does it affect drive requirements?

The SIHB30N60ET5-GE3 has a gate-source threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, confirming standard-level (not logic-level) drive compatibility. Full enhancement requires ≥10 V gate drive to achieve R_DS(on) ≤ 0.125 Ω. Using 8 V drive increases R_DS(on) by ~25 %, raising conduction loss; thus, the SIHB30N60ET5-GE3 must be driven with a robust 10–15 V gate supply.

Can SIHB30N60ET5-GE3 be used in avalanche mode, and what is its rated energy?

Yes, SIHB30N60ET5-GE3 is fully rated for repetitive and single-pulse avalanche operation with E_AS = 690 mJ (single pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This rating enables reliable operation during inductive load switching and fault transients without external clamping. The SIHB30N60ET5-GE3 datasheet specifies this as a guaranteed parameter, not a typical value.

What is the recommended PCB pad layout for SIHB30N60ET5-GE3 in D2PAK package?

Vishay recommends minimum pad dimensions of 0.420" × 0.355" (10.67 mm × 9.02 mm) for the thermal pad and 0.145" × 0.135" (3.68 mm × 3.43 mm) for each lead, per document AN826. A solid copper pour connected to the drain pad via ≥6 thermal vias (0.3 mm diameter) is required to achieve R_thJC = 0.5 °C/W. The SIHB30N60ET5-GE3 thermal performance degrades significantly if pad area falls below these values.

SIHB30N60ET5-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB30N60ET5-GE3 FAQ

1.How can I place an order for SIHB30N60ET5-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB30N60ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB30N60ET5-GE3 reliable?

The price and inventory of SIHB30N60ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB30N60ET5-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB30N60ET5-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB30N60ET5-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB30N60ET5-GE3?

SIHB30N60ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB30N60ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB30N60ET5-GE3?

For technical support, including SIHB30N60ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB30N60ET5-GE3 requirements.

6.How does Aetrix verify that SIHB30N60ET5-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB30N60ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB30N60ET5-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB30N60ET5-GE3?

All SIHB30N60ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB30N60ET5-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB30N60ET5-GE3 part is unused and in its original packaging.

Return procedure for SIHB30N60ET5-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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