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Vishay Siliconix SIHB33N60ET1-GE3
- Part No.:
- SIHB33N60ET1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB33N60ET1-GE3.pdf
- Description:
- MOSFET N-CH 600V 33A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:5,089
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Product details
Overview
SIHB33N60ET1-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.099 Ω max RDS(on) at VGS = 10 V, 150 nC max total gate charge, and 793 mJ single-pulse avalanche energy rating - optimized for high-efficiency switch-mode power supplies and PFC stages.
For engineers reviewing the SIHB33N60ET1-GE3 datasheet, SIHB33N60ET1-GE3 pinout, SIHB33N60ET1-GE3 application, or SIHB33N60ET1-GE3 equivalent, key selection criteria include its 600 V blocking capability, low FOM (RDS(on) × Qg), UIS-rated ruggedness, and thermal resistance of 0.45 °C/W (junction-to-case), critical for high-power industrial and telecom power designs.
Technical Context
This device employs planar stripe silicon technology with optimized charge balance for high-voltage operation. Its 600 V VDS rating supports 400 V DC bus applications with margin, while the 0.083 Ω typical RDS(on) at 25 °C enables low conduction loss in continuous 16.5 A operation.
Dynamic parameters are tuned for hard-switched topologies: Ciss = 3508 pF, Coss = 156 pF, and Crss = 6 pF at VDS = 100 V; turn-on delay (28–56 ns) and fall time (54–80 ns) support switching frequencies up to 100 kHz in PFC and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus with 50 % voltage margin for surge and ringing in telecom/server SMPS |
| RDS(on) max @ 10 V | 0.099 Ω - limits conduction loss to ≤ 27 W at 16.5 A continuous drain current |
| Qg max | 150 nC - determines gate drive power requirement and switching speed in hard-switched PFC circuits |
| EAS | 793 mJ - enables robust unclamped inductive switching without external snubbers in motor drives or welders |
| ID cont @ TC = 100 °C | 21 A - defines usable current derating in thermally constrained PCB layouts with heatsink interface |
| RthJC | 0.45 °C/W - allows junction temperature rise of only 95 °C at 21 A conduction loss (PD ≈ 44 W) |
| VSD max | 1.2 V @ IS = 16.5 A - sets forward drop penalty during body diode commutation in bridge configurations |
Pinout & Package
SIHB33N60ET1-GE3 is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large thermal pad on the bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard PWM controllers |
| D | High-side drain node | Connected to internal die drain and thermal pad; must be soldered to large copper area for thermal management |
| S | Source return path | Common reference for gate drive and current sensing; low-inductance layout required for fast switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Low figure-of-merit (RDS(on) × Qg) | ≤ 14.9 Ω·nC - reduces combined conduction and switching losses in high-frequency PFC stages |
| Avalanche energy rated (UIS) | 793 mJ - eliminates need for external clamping in inductive load switching and fault conditions |
| Ultra-low gate charge | 100–150 nC - lowers gate driver IC power dissipation and enables use of cost-effective 1-A drivers |
| Low input capacitance | Ciss = 3508 pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments |
| High dV/dt ruggedness | 70 V/ns - sustains rapid voltage transients in hard-switched converters without spurious turn-on |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary-side switching in 3.3 kW front-end AC/DC converter with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost PFC circuit operating at 65–100 kHz. Use Value: 0.099 Ω RDS(on) and 150 nC Qg enable >96 % efficiency at full load while maintaining <105 °C junction temperature under forced air cooling. |
Use Scenario: Output rectification and isolation switching in 48 V/50 A telecom rectifier module with hold-up capacitor support. IC Role / Device Role / Timing Role: Synchronous rectifier and secondary-side switch in phase-shifted full-bridge topology. Use Value: 793 mJ EAS withstands output short-circuit events; 1.2 V VSD limits reverse recovery loss during zero-voltage switching transitions. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switching in 5 kW string inverter DC/AC stage using three-phase IGBT/MOSFET hybrid H-bridge. IC Role / Device Role / Timing Role: High-voltage DC-link switch handling 600 V bus with bidirectional current flow during MPPT modulation. Use Value: 600 V VDS rating provides margin against solar array open-circuit voltage spikes; RthJC = 0.45 °C/W enables compact heatsink integration. |
Use Scenario: Inverter leg switching in 7.5 kW variable-frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switching device in 3-phase inverter bridge, conducting pulsed 33 A peak currents with 100 % duty cycle capability. Use Value: 88 A pulsed drain current (IDM) supports motor startup surges; body diode trr = 503–1006 ns enables clean freewheeling without shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW33N60M2 | 600 V, 33 A, RDS(on) = 0.095 Ω, Qg = 132 nC, D2PAK package | Lower Qg improves switching efficiency but reduced EAS (520 mJ) limits ruggedness in inductive loads | Preferred where gate drive loss dominates and avalanche stress is minimal |
| IXFH32N60P | 600 V, 32 A, RDS(on) = 0.115 Ω, Qg = 120 nC, TO-247 package | Higher RDS(on) increases conduction loss; TO-247 offers better thermal performance but larger footprint | Chosen when higher junction-to-ambient thermal margin is needed and board space permits |
Compared with STW33N60M2 and IXFH32N60P, SIHB33N60ET1-GE3 delivers superior avalanche ruggedness (793 mJ vs. 520/420 mJ) and lower RDS(on) than the IXFH part, making it optimal for PFC and industrial motor drives where reliability under transient overload is critical.
Availability
SIHB33N60ET1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for SIHB33N60ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The E Series Power MOSFETs, including SIHB33N60ET1-GE3, were engineered for high-efficiency, high-voltage switch-mode power conversion in telecom, industrial, and renewable energy systems.
FAQ
What is the maximum continuous drain current for SIHB33N60ET1-GE3 at 100 °C case temperature?
The SIHB33N60ET1-GE3 supports 21 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 33 A rating at 25 °C, based on the device's 2.2 W/°C linear derating factor and 278 W maximum power dissipation limit. Engineers must verify PCB copper area and heatsinking to sustain this current without exceeding 150 °C junction temperature.
Does SIHB33N60ET1-GE3 have a fully rated avalanche capability, and how is it tested?
Yes, SIHB33N60ET1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 793 mJ. Per Vishay test condition b, this is measured at VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 7.5 A. The rating ensures safe operation during inductive load turn-off transients without external snubbers in applications like welding or motor drives.
What is the gate threshold voltage range for SIHB33N60ET1-GE3, and why does it matter for drive circuit design?
The gate threshold voltage (VGS(th)) for SIHB33N60ET1-GE3 is 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental turn-on from noise or leakage. Designers must ensure gate drive voltage exceeds 4.0 V under worst-case conditions (e.g., driver drop, PCB trace resistance) to guarantee full enhancement and minimize RDS(on) variation across temperature and unit-to-unit spread.
How does the body diode performance of SIHB33N60ET1-GE3 impact its use in synchronous rectification?
The SIHB33N60ET1-GE3 body diode has a forward voltage (VSD) of 0.9–1.2 V at IS = 16.5 A and TJ = 25 °C, with reverse recovery time (trr) of 503–1006 ns. In synchronous rectification, this relatively slow recovery requires careful dead-time control to avoid shoot-through, and the forward drop contributes measurable conduction loss. For high-frequency designs (>200 kHz), an external Schottky diode may be preferred, but SIHB33N60ET1-GE3 remains viable in 65–100 kHz PFC and LLC topologies.
Is SIHB33N60ET1-GE3 RoHS-compliant and halogen-free, and what does the "-GE3" suffix indicate?
Yes, SIHB33N60ET1-GE3 is both lead (Pb)-free and halogen-free, as confirmed by the ordering information table and Vishay's material categorization documentation. The "-GE3" suffix specifically denotes compliance with JEDEC JS709B (halogen-free) and JESD204 (lead-free) standards, and indicates packaging in tape-and-reel format compatible with automated SMT assembly. This makes SIHB33N60ET1-GE3 suitable for environmentally regulated markets including EU RoHS and China RoHS.
SIHB33N60ET1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3508 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB33N60ET1-GE3 FAQ
1.How can I place an order for SIHB33N60ET1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB33N60ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB33N60ET1-GE3 reliable?
The price and inventory of SIHB33N60ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB33N60ET1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB33N60ET1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB33N60ET1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB33N60ET1-GE3?
SIHB33N60ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB33N60ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB33N60ET1-GE3?
For technical support, including SIHB33N60ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB33N60ET1-GE3 requirements.
6.How does Aetrix verify that SIHB33N60ET1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB33N60ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB33N60ET1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB33N60ET1-GE3?
All SIHB33N60ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB33N60ET1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB33N60ET1-GE3 part is unused and in its original packaging.
Return procedure for SIHB33N60ET1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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