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Vishay Siliconix SIHB35N60E-GE3
- Part No.:
- SIHB35N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB35N60E-GE3.pdf
- Description:
- MOSFET N-CH 650V 32A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:93
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Product details
Overview
SIHB35N60E-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.082 Ω RDS(on) at VGS = 10 V, 132 nC total gate charge, and 691 mJ single-pulse avalanche energy rating. It delivers low conduction and switching losses for high-efficiency hard-switching PFC and SMPS stages in server power supplies and photovoltaic inverters.
For engineers reviewing the SIHB35N60E-GE3 datasheet, SIHB35N60E-GE3 pinout, SIHB35N60E-GE3 application, or SIHB35N60E-GE3 equivalent, key selection criteria include its 600 V VDS, 0.082 Ω on-resistance at 17 A/25 °C, 132 nC Qg, 2760 pF Ciss, and avalanche-rated ruggedness - all validated for industrial-grade reliability in continuous 150 °C junction operation.
Technical Context
This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted gate structure to achieve 25 % lower specific on-resistance (mΩ·cm²) versus prior E-series generations. Its low Qg/Qgd ratio (132 nC / 46 nC) and 5 pF Crss enable fast, low-loss switching in 480 V bus applications.
The device integrates an ultra-low forward-voltage body diode (VSD = 0.9–1.2 V at 17 A, 25 °C) with 455–910 ns reverse recovery time and 8–16 μC Qrr, supporting ZVS-capable topologies and reducing diode-related losses in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified rails with 50 % safety margin for surge immunity in PFC and PV inverter DC-link stages |
| RDS(on) max | 0.094 Ω at 17 A, 25 °C - enables <1.5 W conduction loss at 32 A continuous drain current under thermal derating |
| Qg max | 132 nC - determines gate drive power requirement (~1.3 mW per MHz at 10 V drive) and influences turn-on speed in PWM control |
| EAS | 691 mJ - ensures robustness against unclamped inductive switching events without external snubbers in motor drive or welding circuits |
| Ciss | 2760 pF - sets Miller capacitance-driven gate drive load and impacts high-frequency stability in >100 kHz SMPS designs |
| VGS(th) | 2–4 V - compatible with standard 10 V gate drivers while avoiding false turn-on from noise in noisy industrial environments |
| RthJC | 0.5 °C/W - allows 250 W dissipation with ≤125 °C case-to-junction delta, enabling compact heatsink design in space-constrained telecom PSUs |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant outline. Thermal pad must be soldered to PCB copper area for effective heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires 10 V drive for full enhancement; gate resistance ≤1 Ω recommended to suppress oscillation |
| Pin 2 (D) | Drain | High-side switching node; electrically connected to thermal pad; must be routed with low-inductance layout for 600 V transients |
| Pin 3 (S) | Source | Power return path and gate drive reference; connects to PCB ground plane; source inductance directly impacts switching loss and dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| 25 % lower RDS(on)·area | Reduces die size and cost per watt while maintaining 600 V rating - critical for high-power density server PSU modules |
| Low Qg/Qgd ratio | Enables faster voltage transition with reduced Miller plateau duration, improving efficiency in 100–300 kHz hard-switched converters |
| Avalanche energy rated (UIS) | 691 mJ single-pulse rating eliminates need for external clamping in inductive load switching, simplifying BOM in motor drives |
| Low Ciss and Coss | 2760 pF input and 118 pF output capacitance minimize capacitive losses and improve EMI profile in high-frequency PFC stages |
| Body diode with low Qrr | 8–16 μC reverse recovery charge reduces diode-induced voltage spikes and cross-conduction risk in synchronous rectification |
Applications
| Power Factor Correction (PFC) | Photovoltaic Inverters |
|---|---|
|
Use Scenario: Boost converter stage in 3–5 kW front-end PFC modules for data center PSUs. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology operating at 65–100 kHz. Use Value: 0.082 Ω RDS(on) and 132 nC Qg reduce combined conduction and switching losses below 2.1 W at full load, enabling >98 % PFC efficiency. |
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC topology handling 480 V DC bus with 50 kHz PWM. Use Value: 600 V VDS rating with 691 mJ EAS withstands lightning-induced surges and inductive kickback during islanding detection. |
| Server Power Supplies | Industrial Motor Drives |
|
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI accelerator rack PSUs. IC Role / Device Role / Timing Role: Hard-switched primary FET synchronized to resonant tank zero-voltage switching transitions. Use Value: Low Ciss (2760 pF) minimizes dead-time sensitivity and improves light-load regulation stability in multi-phase systems. |
Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz six-step inverter output stage driving 3-phase induction motor. Use Value: Avalanche rating and 150 °C TJ operation allow direct substitution without snubber redesign or derating in harsh ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW35N60DM6 | 650 V VDS, 0.085 Ω RDS(on), 120 nC Qg, D2PAK package, no avalanche rating | Lacks UIS qualification; requires external clamping in inductive loads; slightly lower gate charge improves switching speed | Preferred where avalanche stress is absent and gate drive power budget is tight |
| IXFH35N60X3 | 600 V VDS, 0.080 Ω RDS(on), 115 nC Qg, TO-247 package, 1000 mJ EAS | Larger TO-247 package increases board area; higher avalanche rating but 30 % greater Ciss (3600 pF) | Chosen when maximum ruggedness is required and thermal management permits larger footprint |
Compared with STW35N60DM6 and IXFH35N60X3, SIHB35N60E-GE3 balances avalanche ruggedness, low gate charge, and compact D2PAK packaging - making it optimal for space-constrained, medium-power industrial and computing power supplies where reliability and layout density are jointly prioritized.
Availability
SIHB35N60E-GE3 is available at Aetrix Electronics and suitable for power factor correction, photovoltaic inverters, and server power supplies requiring stable component supply across multi-year production cycles.
Supply support for SIHB35N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.
The E Series Power MOSFETs, including SIHB35N60E-GE3, were engineered for high-efficiency, high-voltage switching in PFC, SMPS, and renewable energy systems - emphasizing low RDS(on), low Qg, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for SIHB35N60E-GE3 at 100 °C case temperature?
The SIHB35N60E-GE3 supports 20 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify heatsink performance to maintain case temperature ≤100 °C under full-load conditions for SIHB35N60E-GE3.
Does SIHB35N60E-GE3 have a qualified avalanche energy rating, and what is its value?
Yes, SIHB35N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 691 mJ, tested per industry-standard conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A). This rating is guaranteed and characterized across temperature, making SIHB35N60E-GE3 suitable for inductive load switching without external protection components.
What is the gate-source threshold voltage range for SIHB35N60E-GE3, and how does it affect drive compatibility?
The gate-source threshold voltage (VGS(th)) for SIHB35N60E-GE3 is 2–4 V at ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious turn-on in electrically noisy industrial environments. The SIHB35N60E-GE3 is not a logic-level device, so 5 V microcontroller outputs require level-shifting to ensure full enhancement and low RDS(on).
How does the body diode performance of SIHB35N60E-GE3 compare to standard FRDs in terms of reverse recovery?
The SIHB35N60E-GE3 features an integrated body diode with trr = 455–910 ns and Qrr = 8–16 μC at IF = 17 A, dI/dt = 100 A/μs, and TJ = 25 °C. While slower than dedicated fast recovery diodes (FRDs), its Qrr is optimized for synchronous rectification and freewheeling in bridge topologies - reducing voltage overshoot and EMI compared to standard MOSFET body diodes. For SIHB35N60E-GE3, this enables usable performance in non-ZVS hard-switched applications without external diode paralleling.
Is SIHB35N60E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?
Yes, SIHB35N60E-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. The "-GE3" suffix specifically denotes tape-and-reel packaging with green (halogen-free) molding compound and Pb-free terminations, verified per JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements. This makes SIHB35N60E-GE3 suitable for automated SMT assembly in high-reliability industrial and computing applications.
SIHB35N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 94mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 132 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB35N60E-GE3 FAQ
1.How can I place an order for SIHB35N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB35N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB35N60E-GE3 reliable?
The price and inventory of SIHB35N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB35N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB35N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB35N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB35N60E-GE3?
SIHB35N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB35N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB35N60E-GE3?
For technical support, including SIHB35N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB35N60E-GE3 requirements.
6.How does Aetrix verify that SIHB35N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB35N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB35N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB35N60E-GE3?
All SIHB35N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB35N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB35N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHB35N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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