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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB5N80AE-GE3

Name: SIHB5N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB5N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB5N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB5N80AE-GE3.pdf

Description:: E SERIES POWER MOSFET D2PAK (TO-

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Product details

Overview

SIHB5N80AE-GE3 from Vishay Siliconix is an 800 V, 4.4 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 1.17 Ω R_DS(on) at V_GS = 10 V, 16.5 nC total gate charge, and 17 mJ single-pulse avalanche energy - optimized for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHB5N80AE-GE3 datasheet, SIHB5N80AE-GE3 pinout, SIHB5N80AE-GE3 application, or SIHB5N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/Q_gd ratio for reduced switching loss, integrated Zener-protected gate, and rugged UIS-rated operation under unclamped inductive loads.

Technical Context

This device employs a planar high-voltage trench-gated structure enabling stable 800 V blocking with low on-resistance temperature coefficient (0.8 V/°C). Its C_iss = 321 pF and C_oss = 20 pF support fast switching at high bus voltages while maintaining EMI control via controlled dv/dt (70 V/ns at T_J = 125 °C).

The integrated body diode exhibits t_rr = 267 ns and Q_rr = 1.2 μC at I_F = 2 A, supporting hard-switched PFC and resonant topologies. Thermal resistance R_thJC = 2 °C/W enables high-power dissipation with minimal heatsink requirement in surface-mount designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % margin for voltage transients in telecom and industrial SMPS
R_DS(on) typ	1.17 Ω @ V_GS = 10 V - delivers <1.5 W conduction loss at 1.5 A, enabling compact thermal design
Q_g max	16.5 nC - enables efficient gate drive with standard 1 A peak drivers and reduces switching energy
E_AS	17 mJ - rated for unclamped inductive switching stress without derating, critical for PFC choke protection
C_iss	321 pF - balances switching speed and gate drive stability in high-frequency (>100 kHz) converters
t_r/t_f	8–16 ns / 28–56 ns - supports clean edge control in hard-switched topologies with minimal overshoot
R_thJC	2 °C/W - allows >50 W continuous power dissipation with moderate heatsinking in D2PAK footprint

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; 10.67 mm × 9.65 mm footprint; 15.88 mm maximum height.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level gate drive; ±30 V absolute max rating protects against transient overvoltage
D (Drain)	Main current output terminal	Connected to high-side switch node; electrically and thermally tied to exposed copper pad on bottom of package
S (Source)	Reference and return path	Provides low-inductance source return; used as ground reference for gate driver and current sensing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	19.4 Ω·nC - minimizes combined conduction + switching loss in high-frequency PFC and LLC converters
Avalanche-rated (UIS)	17 mJ single-pulse - eliminates need for external snubbers in inductive load switching applications
Integrated Zener ESD protection	±30 V gate rating with built-in clamp - prevents gate oxide damage during handling and board assembly
Low effective output capacitance	C_o(er) = 14 pF - reduces turn-off energy and improves zero-voltage switching (ZVS) capability in resonant topologies
High dv/dt immunity	70 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise, high-dV/dt environments like motor drives

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 48 V input telecom rectifiers operating at 200–500 kHz. IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor handling 380–400 V DC bus with synchronous rectification control. Use Value: Low Q_gd/Q_g ratio (6/11 nC) ensures sharp Miller plateau transition and robust noise immunity at high dv/dt.	Use Scenario: Boost PFC stage in 3 kW server PSU with universal AC input (90–264 VAC) and 400 V DC output. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65–100 kHz. Use Value: 1.17 Ω R_DS(on) limits conduction loss to <1.2 W at 1.8 A RMS, while 16.5 nC Q_g enables efficient 1 A gate driver use.
Industrial Motor Drive	Renewable Energy Inverter
Use Scenario: Brake chopper circuit in 400 V DC bus industrial VFDs managing regenerative energy during rapid deceleration. IC Role / Device Role / Timing Role: Unclamped inductive switch dissipating braking energy into a resistor bank with repetitive avalanche stress. Use Value: 17 mJ E_AS rating allows reliable 100+ avalanche cycles per second without degradation, validated per JEDEC JESD24-11.	Use Scenario: DC-link switching in string inverters for solar PV systems with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-level NPC configuration handling up to 800 V DC link voltage. Use Value: 800 V V_DS rating provides 20 % margin over 1000 V system max, while R_thJC = 2 °C/W supports forced-air-cooled thermal design.

Server Power Supply

Telecom Rectifier

Use Scenario: High-efficiency active clamp forward or LLC resonant converter in 48 V input telecom rectifiers operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor handling 380–400 V DC bus with synchronous rectification control.

Use Value: Low Q_gd/Q_g ratio (6/11 nC) ensures sharp Miller plateau transition and robust noise immunity at high dv/dt.

Use Scenario: Boost PFC stage in 3 kW server PSU with universal AC input (90–264 VAC) and 400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: 1.17 Ω R_DS(on) limits conduction loss to <1.2 W at 1.8 A RMS, while 16.5 nC Q_g enables efficient 1 A gate driver use.

Industrial Motor Drive

Renewable Energy Inverter

Use Scenario: Brake chopper circuit in 400 V DC bus industrial VFDs managing regenerative energy during rapid deceleration.

IC Role / Device Role / Timing Role: Unclamped inductive switch dissipating braking energy into a resistor bank with repetitive avalanche stress.

Use Value: 17 mJ E_AS rating allows reliable 100+ avalanche cycles per second without degradation, validated per JEDEC JESD24-11.

Use Scenario: DC-link switching in string inverters for solar PV systems with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or three-level NPC configuration handling up to 800 V DC link voltage.

Use Value: 800 V V_DS rating provides 20 % margin over 1000 V system max, while R_thJC = 2 °C/W supports forced-air-cooled thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK80ZFP	800 V, 4.5 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP package	Higher Q_g increases switching loss; through-hole mounting limits board density	Preferred where cost sensitivity outweighs thermal performance and layout space constraints
IXTH5N80L2	800 V, 4.5 A, R_DS(on) = 1.3 Ω, Q_g = 14 nC, TO-247 package	Lower Q_g but larger TO-247 footprint; no integrated Zener ESD protection	Selected when higher peak current (7 A IDM) and superior heatsinking are prioritized over surface-mount integration

Compared with STP5NK80ZFP and IXTH5N80L2, SIHB5N80AE-GE3 delivers best-in-class R_DS(on) × Q_g FOM (19.4 Ω·nC), D2PAK thermal efficiency (R_thJC = 2 °C/W), and integrated gate protection - making it optimal for space-constrained, high-reliability telecom and server power designs.

Availability

SIHB5N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC modules requiring stable component supply, long-term lifecycle assurance, and lead-free/halogen-free compliance.

Supply support for SIHB5N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The E Series Power MOSFET product line, including SIHB5N80AE-GE3, is engineered for high-voltage switching in demanding power conversion applications such as telecom infrastructure, industrial motor drives, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHB5N80AE-GE3 at 100 °C case temperature?

The SIHB5N80AE-GE3 has a continuous drain current rating of 2.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 4.4 A rating at 25 °C, based on a linear derating factor of 0.5 W/°C and R_thJC = 2 °C/W. Designers must ensure heatsinking maintains case temperature ≤100 °C to sustain this current in SIHB5N80AE-GE3 applications.

Does SIHB5N80AE-GE3 include integrated ESD protection on the gate terminal?

Yes, SIHB5N80AE-GE3 features integrated Zener diode ESD protection on the gate, enabling a ±30 V gate-source voltage rating. This protection is explicitly stated in the Features section and verified by the ±50 μA I_GSS limit at V_GS = ±30 V in the Electrical Characteristics table. The Zener clamping prevents gate oxide damage during handling and PCB assembly, eliminating need for external gate protection in SIHB5N80AE-GE3 designs.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB5N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHB5N80AE-GE3 is 267 ns, measured at T_J = 25 °C, I_F = I_S = 2 A, di/dt = 100 A/μs, and V_R = 25 V. This value is documented in the Drain-Source Body Diode Characteristics table and supports use in hard-switched PFC and flyback topologies where diode recovery behavior directly impacts efficiency and EMI in SIHB5N80AE-GE3 circuits.

Can SIHB5N80AE-GE3 be used in avalanche mode, and what is its rated energy?

Yes, SIHB5N80AE-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 17 mJ, tested per JEDEC standard with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.1 A. This rating is confirmed in both the Features list and Absolute Maximum Ratings table, making SIHB5N80AE-GE3 suitable for brake chopper and snubberless flyback applications without external protection.

What is the thermal resistance from junction to case (R_thJC) for SIHB5N80AE-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHB5N80AE-GE3 is 2 °C/W, as specified in the Thermal Resistance Ratings table. This low value is enabled by the D2PAK package's large exposed drain pad and direct thermal path to the PCB copper, allowing SIHB5N80AE-GE3 to dissipate up to 62.5 W continuously when properly mounted on a 2 oz copper thermal pad with adequate airflow or heatsinking.

SIHB5N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 321 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB5N80AE-GE3 FAQ

1.How can I place an order for SIHB5N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB5N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB5N80AE-GE3 reliable?

The price and inventory of SIHB5N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB5N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB5N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB5N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB5N80AE-GE3?

SIHB5N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB5N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB5N80AE-GE3?

For technical support, including SIHB5N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB5N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB5N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB5N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB5N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB5N80AE-GE3?

All SIHB5N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB5N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB5N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB5N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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