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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB6N80AE-GE3

Name: SIHB6N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHB6N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB6N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB6N80AE-GE3.pdf

Description:: E SERIES POWER MOSFET D2PAK (TO-

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Product details

Overview

SIHB6N80AE-GE3 from Vishay Siliconix is an 800 V, 5 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.826 Ω at V_GS = 10 V, Q_g = 15 nC (typ), and avalanche-rated (E_AS = 20.3 mJ). It delivers low conduction and switching losses for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHB6N80AE-GE3 datasheet, SIHB6N80AE-GE3 pinout, SIHB6N80AE-GE3 application, or SIHB6N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, ultra-low gate charge, integrated Zener ESD protection, and rugged unclamped inductive switching capability - all validated for industrial-grade thermal cycling and high-reliability power conversion.

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for fast switching with minimized C_iss (422 pF) and C_oss (24 pF), enabling efficient operation in hard-switched topologies up to 100 kHz. Its gate threshold voltage (2–4 V) ensures stable turn-on under wide drive conditions while maintaining low leakage (I_DSS ≤ 1 μA at 800 V).

The integrated body diode exhibits t_rr = 285 ns (typ) and Q_rr = 1.7 μC at 25 °C, supporting moderate-frequency synchronous rectification and flyback recovery. Thermal resistance R_thJC = 2 °C/W enables high-power dissipation with minimal heatsink requirement in surface-mount configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and offline SMPS designs without derating
R_DS(on) typ @ 10 V	0.826 Ω - enables <5 W conduction loss at 5 A continuous drain current in TO-263 package
Q_g max	22.5 nC - reduces gate driver power demand and improves efficiency in high-frequency (>65 kHz) converters
E_AS	20.3 mJ - withstands repetitive unclamped inductive energy events in motor drives and welders
C_iss	422 pF - minimizes Miller effect and improves dv/dt immunity in high-side switch configurations
t_r/t_f	10/20 ns (typ) - supports clean edge transitions with low EMI generation in compact layouts
T_J range	−55 to +150 °C - qualified for extended ambient operation in industrial and telecom base station enclosures

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-ended, thermally enhanced plastic housing with exposed drain pad for direct PCB thermal coupling. Dimensions per JEDEC outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H); drain tab occupies full underside area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; low Q_gs (4 nC) enables fast turn-on with minimal overshoot
D (Drain)	High-voltage output terminal	Connected to exposed copper pad on PCB bottom; carries full load current and dissipates >90% of junction heat
S (Source)	Reference node / return path	Common source connection for gate drive and current sensing; low-inductance layout critical for dV/dt stability

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	12.4 Ω·nC - balances conduction and switching loss for optimal efficiency across 50–100 kHz PFC stages
Avalanche energy rating	20.3 mJ single-pulse - eliminates need for external snubbers in inductive load switching applications
Zener-protected gate	±30 V V_GS rating with integrated clamp - prevents ESD damage during handling and board assembly
Low C_oss (24 pF)	Reduces capacitive turn-off loss and improves zero-voltage switching margin in resonant topologies
Body diode Q_rr	1.7 μC (typ) - enables reliable freewheeling in buck-derived converters without external Schottky assist

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC bus and 3 kW output. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) PFC controller stage. Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W vs. legacy 1 Ω devices, improving system efficiency from 95.1% to 95.7% at full load.	Use Scenario: 48 V output telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Primary-side switch in forward or half-bridge topology handling 800 V transient surges. Use Value: 800 V V_DS rating and 20.3 mJ E_AS ensure robustness against lightning-induced line transients without crowbar circuitry.
Industrial Motor Drive Inverter	Renewable Energy Battery Charger
Use Scenario: 3-phase IGBT gate driver auxiliary supply using flyback converter with 600 V input. IC Role / Device Role / Timing Role: Main switch in isolated flyback transformer primary winding. Use Value: Fast t_r/t_f and low C_iss minimize switching loss and allow 120 kHz operation, reducing transformer size by 22%.	Use Scenario: Bidirectional DC-DC stage in solar microinverter battery interface with 600 V PV string input. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-boost topology managing regenerative braking energy. Use Value: Integrated body diode with 285 ns t_rr supports reverse current flow without external diode, saving 3.2 mm² PCB area per channel.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 65–100 kHz with 400 V DC bus and 3 kW output.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) PFC controller stage.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.2 W vs. legacy 1 Ω devices, improving system efficiency from 95.1% to 95.7% at full load.

Use Scenario: 48 V output telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Primary-side switch in forward or half-bridge topology handling 800 V transient surges.

Use Value: 800 V V_DS rating and 20.3 mJ E_AS ensure robustness against lightning-induced line transients without crowbar circuitry.

Industrial Motor Drive Inverter

Renewable Energy Battery Charger

Use Scenario: 3-phase IGBT gate driver auxiliary supply using flyback converter with 600 V input.

IC Role / Device Role / Timing Role: Main switch in isolated flyback transformer primary winding.

Use Value: Fast t_r/t_f and low C_iss minimize switching loss and allow 120 kHz operation, reducing transformer size by 22%.

Use Scenario: Bidirectional DC-DC stage in solar microinverter battery interface with 600 V PV string input.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-boost topology managing regenerative braking energy.

Use Value: Integrated body diode with 285 ns t_rr supports reverse current flow without external diode, saving 3.2 mm² PCB area per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.85 Ω, Q_g = 28 nC, TO-220FP package	Higher current rating but larger Q_g and through-hole mounting; requires heatsink screw attachment	Preferred where higher peak current headroom is needed and board space allows vertical mounting
IXTH6N80L	800 V, 6 A, R_DS(on) = 0.95 Ω, Q_g = 18 nC, TO-247 package	Lower gate charge than STP8NK80ZFP but higher R_DS(on); superior thermal performance via TO-247 metal tab	Selected when thermal management dominates over gate drive loss and mechanical robustness is critical

Compared with SIHB6N80AE-GE3, STP8NK80ZFP offers higher ID but increases switching loss due to +87% Qg and limits layout flexibility with through-hole mounting; IXTH6N80L trades 15% higher RDS(on) for better thermal dissipation in high-ambient environments, making it suitable for sealed enclosures above 70 °C.

Availability

SIHB6N80AE-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and renewable energy battery chargers requiring stable component supply and long-term production continuity.

Supply support for SIHB6N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in mission-critical power conversion systems - emphasizing low FOM, rugged avalanche capability, and industry-standard packaging for drop-in compatibility.

FAQ

What is the maximum continuous drain current rating for SIHB6N80AE-GE3 at 100 °C case temperature?

The SIHB6N80AE-GE3 has a continuous drain current rating of 3.2 A at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHB6N80AE-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHB6N80AE-GE3 include integrated ESD protection, and if so, what type?

Yes, the SIHB6N80AE-GE3 integrates a Zener diode for gate-source ESD protection, rated for ±30 V V_GS. This built-in clamp prevents electrostatic discharge damage during handling and PCB assembly without requiring external components. The SIHB6N80AE-GE3 meets standard HBM ESD requirements per JEDEC JESD22-A114, verified through qualification testing across multiple manufacturing lots.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB6N80AE-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHB6N80AE-GE3 body diode is 285 ns, measured at TJ = 25 °C with IF = IS = 3 A, di/dt = 100 A/μs, and VR = 25 V. This parameter is critical for evaluating freewheeling behavior in hard-switched topologies. The SIHB6N80AE-GE3's t_rr remains stable up to 150 °C junction temperature, supporting consistent performance in thermally demanding applications.

Can SIHB6N80AE-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the SIHB6N80AE-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 20.3 mJ, tested under standardized conditions: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.2 A, and starting T_J = 25 °C. This rating confirms the SIHB6N80AE-GE3's ability to safely absorb inductive energy without failure, eliminating need for external clamping circuits in many industrial designs.

What is the thermal resistance from junction to case (R_thJC) for SIHB6N80AE-GE3, and how does it impact heatsink design?

The SIHB6N80AE-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 2 °C/W, enabling efficient heat transfer from die to PCB copper pour or heatsink. With PD = 62.5 W maximum, this yields only 125 °C temperature rise across the interface at full power - allowing use of minimal copper area (≥ 10 cm² 2 oz Cu) without forced air. The SIHB6N80AE-GE3's low R_thJC makes it suitable for compact, fanless power modules where thermal density is constrained.

SIHB6N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 422 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB6N80AE-GE3 FAQ

1.How can I place an order for SIHB6N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB6N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB6N80AE-GE3 reliable?

The price and inventory of SIHB6N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB6N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB6N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB6N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB6N80AE-GE3?

SIHB6N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB6N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB6N80AE-GE3?

For technical support, including SIHB6N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB6N80AE-GE3 requirements.

6.How does Aetrix verify that SIHB6N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB6N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB6N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB6N80AE-GE3?

All SIHB6N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB6N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB6N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHB6N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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