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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB6N80E-GE3

Name: SIHB6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHB6N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB6N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB6N80E-GE3.pdf

Description:: MOSFET N-CH 800V 5.4A D2PAK

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Product details

Overview

SIHB6N80E-GE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.82 Ω @ V_GS = 10 V, Q_g = 22 nC (typ), and E_AS = 95 mJ - designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHB6N80E-GE3 datasheet, SIHB6N80E-GE3 pinout, SIHB6N80E-GE3 application, or SIHB6N80E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance R_thJC = 1.6 °C/W, and body diode recovery performance (t_rr = 282 ns typ).

Technical Context

This device operates as a high-voltage unidirectional switch with integrated body diode, optimized for hard-switched and resonant SMPS architectures. Its 800 V V_DS rating supports 400 V DC bus designs with 100 % margin, while ultra-low Q_g/Q_gd ratio (22 nC / 8 nC) enables fast turn-on with reduced Miller-induced shoot-through risk.

The MOSFET exhibits positive V_DS temperature coefficient (1.1 V/°C) and normalized R_DS(on) drift ≤ 2.5× from −55 °C to +150 °C. Avalanche energy rating (95 mJ, single-pulse) and dV/dt immunity (70 V/ns at T_J = 125 °C) support robust operation in inductive load switching and unclamped inductive turn-off conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V DC-link applications with full safety margin against transients
R_DS(on) typ @ 10 V	0.82 Ω - enables <5.4 A continuous conduction at T_C = 25 °C with ≤22 W conduction loss
Q_g typ	22 nC - reduces gate drive power and allows use of low-current drivers in high-frequency PFC
E_AS	95 mJ - ensures single-pulse unclamped inductive switching survivability without external snubber
t_rr typ	282 ns - minimizes reverse recovery losses in bridge-leg configurations with synchronous rectification
R_thJC	1.6 °C/W - enables direct heatsink mounting for high-power density thermal management
V_GS(th)	2.0–4.0 V - compatible with standard 10 V gate drivers; avoids false turn-on under noise

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab electrically connected to pin 2 (Drain) and thermally coupled to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–10 V logic-level signal; input capacitance C_iss = 827 pF enables predictable drive timing
D	High-side power terminal	Drain connects to high-voltage rail; exposed pad provides primary thermal path (R_thJC = 1.6 °C/W)
S	Source reference node	Source ties to power ground or floating node; body diode anode tied internally to source

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	18.04 Ω·nC - balances conduction and switching loss for 100–300 kHz PFC operation
Avalanche-rated (UIS)	95 mJ single-pulse - eliminates need for external clamping in flyback or LLC resonant converters
Low C_oss (37 pF)	Reduces capacitive turn-off loss and improves light-load efficiency in high-frequency SMPS
Body diode t_rr = 282 ns	Enables reliable operation in half-bridge motor drives and bidirectional DC/DC where reverse recovery matters
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 48 V output, 3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 200 kHz with zero-voltage switching. Use Value: Low Q_g (22 nC) and low C_oss (37 pF) reduce gate drive loss and capacitive turn-off energy, improving full-load efficiency by ≥0.4 %.	Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted server PSU. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 3.5 A RMS current at 100 kHz with critical conduction mode. Use Value: R_DS(on) = 0.82 Ω and E_AS = 95 mJ ensure stable operation during line surges and maintain >96 % PFC efficiency across 90–264 V AC input.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V DC bus section, switching at 16 kHz with soft commutation. Use Value: 800 V rating and dV/dt immunity (70 V/ns) prevent spurious turn-on during high dv/dt transitions in transformerless inverters.	Use Scenario: Brake chopper circuit in 7.5 kW HVAC inverter controlling induction motor deceleration. IC Role / Device Role / Timing Role: Unidirectional energy dump switch clamping regenerated bus voltage spikes during rapid stop. Use Value: Single-pulse avalanche capability (95 mJ) absorbs up to 1.2 J of regenerative energy per pulse without failure, eliminating external TVS.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 48 V output, 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 200 kHz with zero-voltage switching.

Use Value: Low Q_g (22 nC) and low C_oss (37 pF) reduce gate drive loss and capacitive turn-off energy, improving full-load efficiency by ≥0.4 %.

Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted server PSU.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 3.5 A RMS current at 100 kHz with critical conduction mode.

Use Value: R_DS(on) = 0.82 Ω and E_AS = 95 mJ ensure stable operation during line surges and maintain >96 % PFC efficiency across 90–264 V AC input.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V DC bus section, switching at 16 kHz with soft commutation.

Use Value: 800 V rating and dV/dt immunity (70 V/ns) prevent spurious turn-on during high dv/dt transitions in transformerless inverters.

Use Scenario: Brake chopper circuit in 7.5 kW HVAC inverter controlling induction motor deceleration.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch clamping regenerated bus voltage spikes during rapid stop.

Use Value: Single-pulse avalanche capability (95 mJ) absorbs up to 1.2 J of regenerative energy per pulse without failure, eliminating external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK80ZFP	R_DS(on) = 0.85 Ω @ 10 V; Q_g = 28 nC; no UIS rating specified	Lacks avalanche energy spec; requires external clamping in inductive loads	Prefer SIHB6N80E-GE3 where unclamped inductive switching occurs regularly
IXTH6N80L	R_DS(on) = 0.95 Ω @ 10 V; Q_g = 20 nC; TO-247 package	Larger footprint and higher R_thJC (0.83 °C/W vs. 1.6 °C/W) limits power density	Choose SIHB6N80E-GE3 for space-constrained D2PAK layouts requiring thermal efficiency

Compared with STP6NK80ZFP and IXTH6N80L, SIHB6N80E-GE3 delivers superior avalanche ruggedness and lower on-resistance in a thermally optimized D2PAK package-making it optimal for compact, high-reliability 400 V+ power conversion where layout area and transient robustness are critical.

Availability

SIHB6N80E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHB6N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and parametric precision.

The E Series Power MOSFETs-including SIHB6N80E-GE3-are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where ruggedness and low switching loss are essential.

FAQ

What is the maximum continuous drain current for SIHB6N80E-GE3 at 100 °C case temperature?

The SIHB6N80E-GE3 supports 3.4 A continuous drain current at T_C = 100 °C, derated linearly from 5.4 A at 25 °C using a factor of 0.63 W/°C. This value reflects thermal limitation of the D2PAK package and must be validated with actual board-level heatsinking in the target application.

Does SIHB6N80E-GE3 have avalanche capability, and how is it rated?

Yes, SIHB6N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy of 95 mJ, tested per JEDEC JESD24-11 at V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.6 A. This rating applies directly to the SIHB6N80E-GE3 device and is not extrapolated from other variants.

What is the typical gate-to-source threshold voltage range for SIHB6N80E-GE3?

The SIHB6N80E-GE3 has a V_GS(th) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage currents below 2 V.

Can SIHB6N80E-GE3 be used in place of logic-level MOSFETs?

No, SIHB6N80E-GE3 is not a logic-level device; its V_GS(th) minimum is 2.0 V and it is specified for operation at V_GS = 10 V. It requires a dedicated gate driver capable of delivering ≥10 V, unlike true logic-level MOSFETs that guarantee R_DS(on) at V_GS = 4.5 V or 5 V.

What is the reverse recovery time (t_rr) of the body diode in SIHB6N80E-GE3?

The SIHB6N80E-GE3 body diode has a typical reverse recovery time of 282 ns under test conditions of T_J = 25 °C, I_F = I_S = 3 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter is measured and specified in the official Vishay datasheet (Doc #92029) for the SIHB6N80E-GE3 part.

SIHB6N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB6N80E-GE3 FAQ

1.How can I place an order for SIHB6N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB6N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB6N80E-GE3 reliable?

The price and inventory of SIHB6N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB6N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB6N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB6N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB6N80E-GE3?

SIHB6N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB6N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB6N80E-GE3?

For technical support, including SIHB6N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB6N80E-GE3 requirements.

6.How does Aetrix verify that SIHB6N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB6N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB6N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB6N80E-GE3?

All SIHB6N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB6N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB6N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHB6N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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