Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB8N50D-GE3

Name: SIHB8N50D-GE3
Brand: Vishay Siliconix
SKU: SIHB8N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHB8N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB8N50D-GE3.pdf

Description:: MOSFET N-CH 500V 8.7A TO263

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,934

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHB8N50D-GE3 from Vishay Siliconix is a 500 V, 8.7 A N-channel D2PAK (TO-263) Power MOSFET with R_DS(on) = 0.85 Ω @ V_GS = 10 V, Q_g = 30 nC, and avalanche-rated (E_AS = 29 mJ). It delivers high ruggedness and fast switching for primary-side switching in SMPS, server power supplies, and induction heating inverters.

For engineers reviewing the SIHB8N50D-GE3 datasheet, SIHB8N50D-GE3 pinout, SIHB8N50D-GE3 application, or SIHB8N50D-GE3 equivalent, key selection criteria include its 500 V V_DS, low gate charge for efficient hard-switching, body diode recovery performance (t_rr = 308 ns), thermal resistance (R_thJC = 0.8 °C/W), and D2PAK package suitability for high-current industrial layouts.

Technical Context

This device operates as a unidirectional high-voltage power switch in non-synchronous buck, flyback, and resonant topologies. Its 500 V breakdown voltage supports 400 V DC bus designs with margin, while the 0.85 Ω R_DS(on) balances conduction loss and silicon area in medium-power applications.

The MOSFET features an integrated robust body diode rated for 8 A continuous source-drain current and 32 A pulsed current, with t_rr = 308 ns and Q_rr = 1.8 μC at 25 °C - enabling reliable operation in circuits with inductive turn-off stress and moderate reverse recovery demands.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC-link systems with 25 % voltage margin for transient spikes
R_DS(on) max	0.85 Ω @ V_GS = 10 V - enables ≤ 29 W conduction loss at 8.7 A continuous drain current
Q_g	30 nC - reduces gate drive power and enables <30 ns typical switching transitions with 9.1 Ω R_g
E_AS	29 mJ - ensures single-pulse unclamped inductive switching survivability without external snubbers
t_rr	308 ns - limits reverse recovery current overshoot (I_RRM = 11 A) during hard commutation
R_thJC	0.8 °C/W - allows 156 W power dissipation with ≤125 °C case-to-junction rise under heatsink mounting

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC MO-211 footprint.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±30 V absolute max rating
D	Drain	Main high-voltage terminal; electrically and thermally connected to exposed copper pad; ties to DC bus
S	Source	Reference node for gate drive and current sensing; connects to power ground or low-side shunt

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	25.5 Ω·nC - improves efficiency in high-frequency SMPS by minimizing combined conduction and switching losses
Avalanche energy rating	29 mJ single-pulse - eliminates need for external clamping in inductive load switching circuits
High body diode ruggedness	Rated for repetitive IS = 8 A and pulsed ISM = 32 A - supports freewheeling in motor drives and welding inverters
Fast switching with low C_iss	C_iss = 527 pF - reduces gate drive current demand and speeds up turn-on/turn-off transitions

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switch in 80+ Gold-rated 1–3 kW telecom rectifiers and server PSUs operating from 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch in LLC or phase-shifted full-bridge topology; handles 8.7 A RMS current at 100–300 kHz. Use Value: 0.85 Ω R_DS(on) and 30 nC Q_g enable >95 % efficiency at full load; D2PAK thermal performance sustains 156 W dissipation with standard heatsinking.	Use Scenario: Half-bridge upper/lower switch in 2–5 kW domestic and light-industrial induction cooktops. IC Role / Device Role / Timing Role: Hard-switched power stage element; withstands 500 V blocking and 32 A pulsed diode current during resonant zero-voltage switching transitions. Use Value: 29 mJ E_AS and 308 ns t_rr ensure reliability under repeated inductive turn-off stress; high dV/dt immunity (24 V/ns) prevents false triggering.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: Inverter leg switch in 1–5 HP variable-frequency drives for pumps, fans, and conveyors. IC Role / Device Role / Timing Role: Medium-voltage IGBT replacement in 60–120 kHz PWM inverters; conducts 8 A continuous with body diode freewheeling. Use Value: Integrated 8 A body diode eliminates discrete anti-parallel diode; 0.8 °C/W R_thJC enables compact heatsink design in enclosed enclosures.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 1–2 kW EVSE and industrial battery chargers. IC Role / Device Role / Timing Role: High-efficiency switching element in active clamp forward or asymmetrical half-bridge topologies handling 400 V input. Use Value: Low C_oss (52 pF) and Co(er) = 46 pF reduce capacitive turn-on loss; 500 V rating accommodates 450 V surge testing per IEC 61000-4-5.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switch in 80+ Gold-rated 1–3 kW telecom rectifiers and server PSUs operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch in LLC or phase-shifted full-bridge topology; handles 8.7 A RMS current at 100–300 kHz.

Use Value: 0.85 Ω R_DS(on) and 30 nC Q_g enable >95 % efficiency at full load; D2PAK thermal performance sustains 156 W dissipation with standard heatsinking.

Use Scenario: Half-bridge upper/lower switch in 2–5 kW domestic and light-industrial induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched power stage element; withstands 500 V blocking and 32 A pulsed diode current during resonant zero-voltage switching transitions.

Use Value: 29 mJ E_AS and 308 ns t_rr ensure reliability under repeated inductive turn-off stress; high dV/dt immunity (24 V/ns) prevents false triggering.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: Inverter leg switch in 1–5 HP variable-frequency drives for pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Medium-voltage IGBT replacement in 60–120 kHz PWM inverters; conducts 8 A continuous with body diode freewheeling.

Use Value: Integrated 8 A body diode eliminates discrete anti-parallel diode; 0.8 °C/W R_thJC enables compact heatsink design in enclosed enclosures.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 1–2 kW EVSE and industrial battery chargers.

IC Role / Device Role / Timing Role: High-efficiency switching element in active clamp forward or asymmetrical half-bridge topologies handling 400 V input.

Use Value: Low C_oss (52 pF) and Co(er) = 46 pF reduce capacitive turn-on loss; 500 V rating accommodates 450 V surge testing per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-220FP package	Higher R_DS(on) and lower ID rating; through-hole mounting only	Preferred where board space permits through-hole assembly and thermal mass of TO-220FP suffices
IXTH8N50L2	500 V, 8 A, R_DS(on) = 0.85 Ω, Q_g = 22 nC, TO-247 package	Lower Q_g but larger TO-247 footprint; no integrated body diode rating specified	Selected when faster switching dominates over layout density and body diode ruggedness is secondary

Compared with STP8NK50ZFP and IXTH8N50L2, SIHB8N50D-GE3 uniquely combines D2PAK surface-mount compatibility, 29 mJ avalanche rating, and verified 308 ns body diode recovery - making it optimal for space-constrained, high-reliability industrial SMPS and induction heating modules.

Availability

SIHB8N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for SIHB8N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHB8N50D-GE3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage, medium-current switching in industrial power conversion where avalanche capability and body diode performance are critical.

FAQ

What is the maximum continuous drain current for SIHB8N50D-GE3 at 100 °C case temperature?

The SIHB8N50D-GE3 supports 5.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation; actual usable current depends on PCB copper area, heatsink interface, and ambient conditions. The SIHB8N50D-GE3 datasheet confirms this value with linear derating beyond 100 °C.

Does SIHB8N50D-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHB8N50D-GE3 is rated for 29 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 5 A. This rating is validated per the unclamped inductive switching (UIS) test method defined in JEDEC standards and ensures robustness against inductive turn-off transients without external protection. The SIHB8N50D-GE3 specification sheet documents this in the Absolute Maximum Ratings section.

What is the typical reverse recovery time (t_rr) of the body diode in SIHB8N50D-GE3?

The SIHB8N50D-GE3 body diode has a typical reverse recovery time (t_rr) of 308 ns at T_J = 25 °C, I_F = 4 A, dI/dt = 100 A/μs, and V_R = 20 V. This parameter is measured using standardized diode recovery test circuits and directly impacts switching loss and EMI in hard-commutated topologies. The SIHB8N50D-GE3 datasheet specifies t_rr in the Drain-Source Body Diode Characteristics table.

Is SIHB8N50D-GE3 lead (Pb)-free and halogen-free?

Yes, SIHB8N50D-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the Vishay datasheet (Document Number: 91529). The "-GE3" suffix explicitly denotes compliance with RoHS Directive 2011/65/EU and Vishay's internal halogen-free standard (per document 99912). The SIHB8N50D-GE3 meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow.

What is the gate threshold voltage range for SIHB8N50D-GE3?

The SIHB8N50D-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at V_DS = V_GS and I_D = 250 μA, per the Electrical Specifications table. This indicates standard-level gate drive compatibility - not logic-level - requiring ≥10 V for full R_DS(on) performance. The SIHB8N50D-GE3 datasheet defines this parameter under Static specifications with min/typ/max values.

SIHB8N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 527 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB8N50D-GE3 FAQ

1.How can I place an order for SIHB8N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB8N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB8N50D-GE3 reliable?

The price and inventory of SIHB8N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB8N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB8N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB8N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB8N50D-GE3?

SIHB8N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB8N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB8N50D-GE3?

For technical support, including SIHB8N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB8N50D-GE3 requirements.

6.How does Aetrix verify that SIHB8N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB8N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB8N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB8N50D-GE3?

All SIHB8N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB8N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB8N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHB8N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …