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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD11N80AE-GE3

Name: SIHD11N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHD11N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD11N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD11N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 8A TO252AA

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Product details

Overview

SIHD11N80AE-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.391 Ω @ V_GS = 10 V, Q_g = 28 nC (typ), and avalanche-rated (E_AS = 88 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHD11N80AE-GE3 datasheet, SIHD11N80AE-GE3 pinout, SIHD11N80AE-GE3 application, or SIHD11N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, ultra-low gate charge, integrated Zener ESD protection, and rugged unclamped inductive switching capability - critical for hard-switched high-voltage converters.

Technical Context

This device uses a planar high-voltage trench-enhanced silicon process optimized for fast switching with controlled dV/dt (70 V/ns at T_J = 125 °C) and low C_iss (804 pF). Its body diode exhibits t_rr = 278 ns (typ) and Q_rr = 2.9 μC, enabling moderate-frequency synchronous rectification or freewheeling in discontinuous conduction mode.

The MOSFET integrates a Zener-protected gate structure rated for ±30 V V_GS, supports repetitive operation up to T_J = 150 °C, and features a thermally efficient DPAK package with R_thJC = 1.6 °C/W - enabling high-power density designs without forced airflow in industrial PFC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports 640 V DC bus designs with 25 % voltage margin for surge and ripple in telecom rectifiers.
R_DS(on) typ	0.391 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 5.5 A continuous drain current in PFC boost stages.
Q_g typ	28 nC - Reduces gate drive power and enables use of low-cost 1 W drivers in 100–300 kHz SMPS applications.
E_AS	88 mJ - Withstands single-pulse inductive energy events (e.g., transformer leakage spikes) without failure.
C_iss	804 pF - Low input capacitance minimizes Miller effect and improves turn-on speed stability under high dV/dt.
t_r/t_f	15/27 ns (typ) - Supports clean, low-overshoot switching in hard-switched topologies with minimal snubber loss.
R_thJC	1.6 °C/W - Allows >50 W dissipation with modest heatsinking in compact DPAK-based power modules.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended drain tab (exposed copper pad), 3-pin configuration with standard thermal pad layout per Application Note 826. Drain connects directly to the large copper die attach area on the underside for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level gate drive; Zener-protected against ±30 V transients; low C_iss ensures fast edge response.
D (Drain)	High-side power output	Connected to exposed metal tab; carries full load current and dissipates heat directly to PCB copper pour or heatsink.
S (Source)	Reference node / return path	Common source for gate drive loop; low-inductance connection critical to minimize ringing during hard switching.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.9 Ω·nC - Balances conduction and switching loss for peak efficiency in 65–200 kHz PFC stages.
Avalanche energy rating	88 mJ (single pulse) - Eliminates need for external clamping in flyback or LLC resonant converter primary switches.
Integrated Zener ESD protection	±30 V gate rating - Prevents gate oxide damage during board handling and automated assembly without external TVS.
Low effective output capacitance	C_oss(tr) = 162 pF - Reduces turn-off energy loss and improves light-load efficiency in high-frequency converters.
Rugged body diode	t_rr = 278 ns, Q_rr = 2.9 μC - Enables reliable freewheeling in non-synchronous buck or boost converters up to 150 kHz.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC stage operating at 65–100 kHz with 380–400 V DC output from 3-phase rectified AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles 8 A RMS input current. Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.8 W vs. legacy 1 Ω devices, improving system efficiency from 95.2 % to 96.1 % at full load.	Use Scenario: Primary-side switch in 48 V telecom rectifier with 380 V DC bus and 100 kHz fixed-frequency hard switching. IC Role / Device Role / Timing Role: High-side switch in forward or half-bridge topology; subjected to 640 V transient stress during line surges. Use Value: 800 V V_DS rating and 88 mJ E_AS ensure robustness against 10/700 µs telecom surges without derating or snubbers.
Industrial Motor Drive Inverter	Renewable Energy Battery Charger
Use Scenario: DC-link switching in 3 kW induction motor drive with IGBT-like bus voltage (600–750 V). IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge; commutated at ≤20 kHz with active gate control. Use Value: 70 V/ns dV/dt immunity and low C_iss suppress false triggering and EMI generation during high dv/dt transitions.	Use Scenario: Isolated DC-DC stage in solar battery charger converting 600 V PV string voltage to 48 V battery bank. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology; operates at 150 kHz with zero-voltage switching assist. Use Value: Low Q_gd/Q_g ratio (12/28 nC) improves ZVS soft-start margin and reduces dead-time sensitivity.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC stage operating at 65–100 kHz with 380–400 V DC output from 3-phase rectified AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles 8 A RMS input current.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~1.8 W vs. legacy 1 Ω devices, improving system efficiency from 95.2 % to 96.1 % at full load.

Use Scenario: Primary-side switch in 48 V telecom rectifier with 380 V DC bus and 100 kHz fixed-frequency hard switching.

IC Role / Device Role / Timing Role: High-side switch in forward or half-bridge topology; subjected to 640 V transient stress during line surges.

Use Value: 800 V V_DS rating and 88 mJ E_AS ensure robustness against 10/700 µs telecom surges without derating or snubbers.

Industrial Motor Drive Inverter

Renewable Energy Battery Charger

Use Scenario: DC-link switching in 3 kW induction motor drive with IGBT-like bus voltage (600–750 V).

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge; commutated at ≤20 kHz with active gate control.

Use Value: 70 V/ns dV/dt immunity and low C_iss suppress false triggering and EMI generation during high dv/dt transitions.

Use Scenario: Isolated DC-DC stage in solar battery charger converting 600 V PV string voltage to 48 V battery bank.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology; operates at 150 kHz with zero-voltage switching assist.

Use Value: Low Q_gd/Q_g ratio (12/28 nC) improves ZVS soft-start margin and reduces dead-time sensitivity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.52 Ω, Q_g = 32 nC, TO-220FP package	Higher R_DS(on) and larger through-hole package; lower thermal performance (R_thJC = 2.5 °C/W)	Preferred where legacy TO-220 footprint compatibility is required and 0.13 Ω higher on-resistance is acceptable.
IXTH11N80L2	800 V, 11 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-247 package	Higher current rating but 61 % greater gate charge; requires stronger gate driver and larger heatsink	Selected when >8 A continuous current or higher avalanche margin (E_AS = 220 mJ) is mandatory in industrial UPS systems.

Compared with STP8NK80ZFP and IXTH11N80L2, SIHD11N80AE-GE3 offers the best balance of low gate charge, DPAK surface-mount compatibility, and thermal resistance - making it optimal for space-constrained, high-efficiency telecom and server PFC modules where board area and thermal management are critical.

Availability

SIHD11N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC modules requiring stable component supply, lead-free compliance, and long-term production continuity.

Supply support for SIHD11N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHD11N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered specifically for high-efficiency, high-density AC-DC and DC-DC conversion in datacenter, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current for SIHD11N80AE-GE3 at 100 °C case temperature?

The SIHD11N80AE-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within R_thJC = 1.6 °C/W and junction temperature ≤ 150 °C. At T_C = 25 °C, the rating increases to 8 A.

Does SIHD11N80AE-GE3 have built-in ESD protection on the gate terminal?

Yes, SIHD11N80AE-GE3 integrates a Zener diode for gate-source ESD protection, rated for ±30 V V_GS. This eliminates the need for external gate protection components in most applications and enhances robustness during PCB handling and automated assembly processes.

What is the typical reverse recovery time (t_rr) of the body diode in SIHD11N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHD11N80AE-GE3 is 278 ns, measured at T_J = 25 °C, I_F = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value supports reliable freewheeling in non-synchronous topologies up to 150 kHz without excessive diode loss or voltage overshoot.

Can SIHD11N80AE-GE3 be used in avalanche mode for circuit protection?

Yes, SIHD11N80AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 88 mJ. This allows safe operation during transient overvoltage events such as transformer leakage spikes - provided pulse width and starting junction temperature comply with test conditions (T_J = 25 °C, L = 28.2 mH, I_AS = 2.5 A).

What is the gate threshold voltage range for SIHD11N80AE-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHD11N80AE-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity in noisy power environments.

SIHD11N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD11N80AE-GE3 FAQ

1.How can I place an order for SIHD11N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD11N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD11N80AE-GE3 reliable?

The price and inventory of SIHD11N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD11N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD11N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD11N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD11N80AE-GE3?

SIHD11N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD11N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD11N80AE-GE3?

For technical support, including SIHD11N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD11N80AE-GE3 requirements.

6.How does Aetrix verify that SIHD11N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD11N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD11N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD11N80AE-GE3?

All SIHD11N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD11N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD11N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHD11N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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