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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD11N80AE-T1-GE3

Name: SIHD11N80AE-T1-GE3
Brand: Vishay Siliconix
SKU: SIHD11N80AE-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD11N80AE-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD11N80AE-T1-GE3.pdf

Description:: N-CHANNEL 800V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHD11N80AE-T1-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.391 Ω at V_GS = 10 V, Q_g = 28 nC (typ), and avalanche-rated (E_AS = 88 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHD11N80AE-T1-GE3 datasheet, SIHD11N80AE-T1-GE3 pinout, SIHD11N80AE-T1-GE3 application, or SIHD11N80AE-T1-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 1.6 °C/W), body diode recovery characteristics (t_rr = 278 ns), gate charge profile, and real-world use context for hard-switched 640 V bus designs.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage operation with low FOM (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust turn-on margin under noisy gate drive conditions while maintaining low leakage (I_DSS ≤ 1 μA at 800 V).

The integrated body diode supports synchronous rectification and unclamped inductive switching, with specified reverse recovery (Q_rr = 2.9 μC, I_RRM = 17 A) and dV/dt ruggedness (70 V/ns at T_J = 125 °C). The Zener-protected gate withstands ±30 V transient stress without degradation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports 640 V DC bus designs with 25 % derating margin for voltage transients in telecom/server PFC stages.
R_DS(on) typ.	0.391 Ω at V_GS = 10 V, I_D = 5.5 A - Enables <1.2 W conduction loss at 8 A continuous drain current (T_C = 25 °C).
Q_g max.	42 nC - Limits gate drive power requirement to ~1.3 mW at 100 kHz switching with 10 V swing, easing driver selection.
E_AS	88 mJ - Withstands single-pulse inductive energy events up to 2.5 A in 28.2 mH circuits without failure (T_J start = 25 °C).
R_thJC	1.6 °C/W - Enables 78 W power dissipation with only 125 °C junction rise above case, supporting compact heatsink integration.
t_rr	278 ns (typ) - Reduces diode recovery-related switching loss and EMI in hard-switched topologies operating below 200 kHz.
C_iss	804 pF - Low input capacitance improves gate drive efficiency and reduces Miller-induced oscillation risk in high-dV/dt environments.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration (G–D–S) with drain tab electrically tied to pin 2 and thermally connected to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; requires <10 Ω series resistance to damp ringing during fast switching.
D (Drain)	Main power output terminal	Connected to high-side switch node; must be routed over large copper area for thermal management and low-inductance return path.
S (Source)	Power reference and current return	Serves as local ground reference for gate drive; ties to source of upstream driver and power ground plane to minimize noise coupling.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.4 Ω·nC - Balances conduction and switching loss for optimal efficiency in 100–200 kHz PFC boost converters.
Avalanche energy rating (E_AS)	88 mJ - Eliminates need for external snubbers in inductive load switching applications like motor drives and welding inverters.
Integrated Zener ESD protection	±30 V gate rating - Prevents gate oxide damage during board handling and assembly without requiring external TVS diodes.
Low C_oss (34 pF)	Reduces turn-off loss and improves zero-voltage switching (ZVS) margin in resonant LLC topologies operating near 400 V bus.
Body diode t_rr = 278 ns	Enables reliable operation in synchronous rectifier configurations where fast diode recovery minimizes cross-conduction loss.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100 kHz on 380–400 V DC bus, delivering 1.5 kW with >96 % efficiency. IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into boost inductor; switched at fixed frequency with PWM control. Use Value: Low Q_g and R_DS(on) reduce total losses by 1.8 W vs. legacy 800 V MOSFETs, enabling passive cooling in 1U chassis.	Use Scenario: Dual-phase interleaved PFC front-end in 48 V telecom rectifier, handling 3 kW input with 200 kHz switching. IC Role / Device Role / Timing Role: Main switching transistor in each phase leg; driven by isolated gate drivers synchronized to 180° phase offset. Use Value: Avalanche rating allows safe operation during line surges up to 1.2 kV, eliminating need for active clamping circuitry.
Industrial Motor Drive Inverter	Renewable Energy Battery Charger
Use Scenario: 3-phase IGBT/MOSFET hybrid inverter driving 7.5 kW induction motor with field-oriented control. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; commutated at variable frequency (0–10 kHz) with dead-time control. Use Value: 70 V/ns dV/dt ruggedness prevents false turn-on during high-slew-rate bus transitions, improving system reliability.	Use Scenario: Bidirectional DC–DC stage in solar microinverter battery charger, stepping 400 V PV input to 58 V Li-ion stack. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; operated with soft-switching control. Use Value: Low C_iss and Co(tr) = 162 pF enable efficient ZVS across 20–100 kHz range, reducing switching loss by 35 %.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100 kHz on 380–400 V DC bus, delivering 1.5 kW with >96 % efficiency.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into boost inductor; switched at fixed frequency with PWM control.

Use Value: Low Q_g and R_DS(on) reduce total losses by 1.8 W vs. legacy 800 V MOSFETs, enabling passive cooling in 1U chassis.

Use Scenario: Dual-phase interleaved PFC front-end in 48 V telecom rectifier, handling 3 kW input with 200 kHz switching.

IC Role / Device Role / Timing Role: Main switching transistor in each phase leg; driven by isolated gate drivers synchronized to 180° phase offset.

Use Value: Avalanche rating allows safe operation during line surges up to 1.2 kV, eliminating need for active clamping circuitry.

Industrial Motor Drive Inverter

Renewable Energy Battery Charger

Use Scenario: 3-phase IGBT/MOSFET hybrid inverter driving 7.5 kW induction motor with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; commutated at variable frequency (0–10 kHz) with dead-time control.

Use Value: 70 V/ns dV/dt ruggedness prevents false turn-on during high-slew-rate bus transitions, improving system reliability.

Use Scenario: Bidirectional DC–DC stage in solar microinverter battery charger, stepping 400 V PV input to 58 V Li-ion stack.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; operated with soft-switching control.

Use Value: Low C_iss and Co(tr) = 162 pF enable efficient ZVS across 20–100 kHz range, reducing switching loss by 35 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK80ZFP	R_DS(on) = 0.52 Ω (higher), Q_g = 45 nC, TO-220FP package	Larger footprint and higher thermal resistance (R_thJC = 2.5 °C/W); suited for lower-power or forced-air-cooled designs	Choose STP10NK80ZFP only if TO-220 mounting is required and 13 % higher conduction loss is acceptable.
IXTH11N80L2	R_DS(on) = 0.42 Ω, Q_g = 32 nC, TO-247 package, no integrated Zener	Higher peak current capability (11 A) but lacks gate ESD protection; requires external gate clamp	Select IXTH11N80L2 when higher pulsed current (IDM = 44 A) is needed and layout allows discrete gate protection.

Compared with STP10NK80ZFP and IXTH11N80L2, SIHD11N80AE-T1-GE3 offers superior thermal performance (1.6 °C/W), integrated gate protection, and lowest R_DS(on) × Q_g, making it optimal for space-constrained, high-efficiency 800 V SMPS where reliability and board-level simplicity are critical.

Availability

SIHD11N80AE-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, lead-free compliance, and long-term production continuity.

Supply support for SIHD11N80AE-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHD11N80AE-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-frequency switching in mission-critical power conversion systems where low loss and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHD11N80AE-T1-GE3 at 100 °C case temperature?

The SIHD11N80AE-T1-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within the 150 °C maximum junction temperature. At T_C = 25 °C, the rating increases to 8 A, and linear derating applies between these points using the 0.6 W/°C factor.

Does SIHD11N80AE-T1-GE3 have integrated gate protection, and what is its rated gate-source voltage limit?

Yes, SIHD11N80AE-T1-GE3 includes an integrated Zener diode for gate ESD protection. Its absolute maximum gate-source voltage is ±30 V, validated per JEDEC standards. This eliminates the need for external gate clamps in most applications, provided gate drive circuits respect this limit and avoid sustained overvoltage beyond 100 ns duration.

What is the typical reverse recovery time (t_rr) of the body diode in SIHD11N80AE-T1-GE3, and under what test conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHD11N80AE-T1-GE3 body diode is 278 ns, measured at T_J = 25 °C with I_F = I_S = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is critical for estimating diode-related switching loss and EMI in hard-switched topologies and is confirmed in the device's "Drain-Source Body Diode Characteristics" section.

Can SIHD11N80AE-T1-GE3 be used in avalanche mode, and what is its single-pulse avalanche energy rating?

Yes, SIHD11N80AE-T1-GE3 is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 88 mJ, tested under standardized conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.5 A. This rating enables robust operation in inductive switching applications without external clamping.

What is the thermal resistance from junction to case (R_thJC) for SIHD11N80AE-T1-GE3, and how does it impact heatsink design?

The maximum junction-to-case thermal resistance (R_thJC) for SIHD11N80AE-T1-GE3 is 1.6 °C/W, as specified in the Thermal Resistance Ratings table. This low value-enabled by the DPAK's exposed drain pad-means that for a 78 W power dissipation, only a 125 °C temperature rise occurs from junction to case. Designers can therefore use minimal copper area or small clip-on heatsinks instead of bulky finned solutions.

SIHD11N80AE-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD11N80AE-T1-GE3 FAQ

1.How can I place an order for SIHD11N80AE-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD11N80AE-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD11N80AE-T1-GE3 reliable?

The price and inventory of SIHD11N80AE-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD11N80AE-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD11N80AE-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD11N80AE-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD11N80AE-T1-GE3?

SIHD11N80AE-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD11N80AE-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD11N80AE-T1-GE3?

For technical support, including SIHD11N80AE-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD11N80AE-T1-GE3 requirements.

6.How does Aetrix verify that SIHD11N80AE-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD11N80AE-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD11N80AE-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD11N80AE-T1-GE3?

All SIHD11N80AE-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD11N80AE-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD11N80AE-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHD11N80AE-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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