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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD11N80AE-T4-GE3

Name: SIHD11N80AE-T4-GE3
Brand: Vishay Siliconix
SKU: SIHD11N80AE-T4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD11N80AE-T4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD11N80AE-T4-GE3.pdf

Description:: N-CHANNEL 800V

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Product details

Overview

SIHD11N80AE-T4-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.391 Ω (typ. at V_GS = 10 V), Q_g = 28 nC (typ.), and avalanche-rated (E_AS = 88 mJ). It serves as a high-voltage switching element in PFC and SMPS stages of telecom/server power supplies.

For engineers reviewing the SIHD11N80AE-T4-GE3 datasheet, SIHD11N80AE-T4-GE3 pinout, SIHD11N80AE-T4-GE3 application, or SIHD11N80AE-T4-GE3 equivalent, key selection criteria include its 800 V V_DS, low gate charge for fast switching, integrated Zener ESD protection, and thermal resistance R_thJC = 1.6 °C/W - critical for high-power density designs.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (804 pF) and ultra-low Q_gd/Q_g ratio (12/28 nC) reduce Miller-induced turn-off delay and improve switching efficiency under high dV/dt conditions up to 70 V/ns.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with t_rr = 278 ns (typ.) and Q_rr = 2.9 μC at T_J = 25 °C. Its ±30 V gate rating and V_GS(th) = 2–4 V enable robust drive compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in 400 V DC bus PFC and offline SMPS topologies without derating.
R_DS(on) (typ.)	0.391 Ω at V_GS = 10 V, I_D = 5.5 A - enables <1.2 W conduction loss at 8 A continuous drain current (T_C = 25 °C).
Q_g (typ.)	28 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers in high-frequency (>100 kHz) converters.
E_AS	88 mJ - provides ruggedness against inductive load transients and simplifies snubber design in motor drives and welding inverters.
R_thJC	1.6 °C/W - permits 78 W power dissipation with ≤125 °C junction rise above case, supporting compact heatsink integration.
C_iss	804 pF - lowers input capacitance-related switching losses and improves gate control stability during fast transitions.
V_GS(th)	2–4 V - ensures reliable turn-on with standard logic-level or 10 V gate drivers while avoiding spurious conduction near ground.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V drive to fully enhance channel; ±30 V absolute max rating protects against transient overvoltage.
D (Drain)	High-voltage power output	Connected to PCB copper pour for thermal dissipation; electrically tied to exposed metal tab (drain potential).
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.9 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–300 kHz PFC and resonant converters.
Avalanche energy rated (UIS)	88 mJ single-pulse - eliminates need for external clamping circuits in inductive switching applications like motor drives.
Integrated Zener ESD protection	HBM > 2 kV - enhances manufacturing robustness and field reliability without requiring external gate protection components.
Low effective output capacitance (C_oss(tr))	162 pF - reduces turn-off energy loss and improves zero-voltage switching (ZVS) capability in LLC resonant topologies.
Body diode t_rr & Q_rr	278 ns / 2.9 μC - minimizes reverse recovery losses and EMI generation when used in synchronous or freewheeling configurations.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100–200 kHz in 3 kW front-end PFC with 400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element handling 8 A RMS input current; switched synchronously with gate driver IC. Use Value: Low Q_g and R_DS(on) reduce total losses by ~1.8 W vs. legacy 800 V MOSFETs, improving system efficiency to >96.5%.	Use Scenario: Isolated DC/DC stage in 48 V telecom rectifier delivering 1200 W with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch in primary-side power conversion; subjected to repetitive 640 V V_DS stress during clamp cycle. Use Value: 800 V V_DS rating and 70 V/ns dV/dt immunity ensure stable operation under high dv/dt noise common in telecom environments.
Industrial Welding Inverter	Renewable Energy Battery Charger
Use Scenario: IGBT replacement in 20 kHz arc-welding inverter output stage driving 200 A peak load. IC Role / Device Role / Timing Role: Half-bridge high-side switch; conducts pulsed current up to 22 A with 100 A/μs dI/dt. Use Value: Avalanche rating (E_AS = 88 mJ) absorbs inductive kickback without failure, enabling elimination of snubbers and reducing BOM count.	Use Scenario: Bidirectional AC/DC charger for 48 V Li-ion battery banks in solar microgrids, operating in CCM boost mode. IC Role / Device Role / Timing Role: Unidirectional power switch in isolated flyback or forward converter; handles 640 V reflected voltage during demagnetization. Use Value: Low C_iss and fast t_r/t_f (15/27 ns typ.) minimize switching loss at 150 kHz, extending thermal margin in sealed outdoor enclosures.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100–200 kHz in 3 kW front-end PFC with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling 8 A RMS input current; switched synchronously with gate driver IC.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~1.8 W vs. legacy 800 V MOSFETs, improving system efficiency to >96.5%.

Use Scenario: Isolated DC/DC stage in 48 V telecom rectifier delivering 1200 W with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power conversion; subjected to repetitive 640 V V_DS stress during clamp cycle.

Use Value: 800 V V_DS rating and 70 V/ns dV/dt immunity ensure stable operation under high dv/dt noise common in telecom environments.

Industrial Welding Inverter

Renewable Energy Battery Charger

Use Scenario: IGBT replacement in 20 kHz arc-welding inverter output stage driving 200 A peak load.

IC Role / Device Role / Timing Role: Half-bridge high-side switch; conducts pulsed current up to 22 A with 100 A/μs dI/dt.

Use Value: Avalanche rating (E_AS = 88 mJ) absorbs inductive kickback without failure, enabling elimination of snubbers and reducing BOM count.

Use Scenario: Bidirectional AC/DC charger for 48 V Li-ion battery banks in solar microgrids, operating in CCM boost mode.

IC Role / Device Role / Timing Role: Unidirectional power switch in isolated flyback or forward converter; handles 640 V reflected voltage during demagnetization.

Use Value: Low C_iss and fast t_r/t_f (15/27 ns typ.) minimize switching loss at 150 kHz, extending thermal margin in sealed outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.48 Ω, Q_g = 35 nC, TO-220FP package	Higher R_DS(on) and Q_g; larger thermal resistance (R_thJC = 2.5 °C/W); requires larger heatsink	Preferred where TO-220 footprint is fixed and lower cost is prioritized over thermal density.
IXTH11N80L2	800 V, 11 A, R_DS(on) = 0.36 Ω, Q_g = 45 nC, TO-247 package	Higher current rating but 61% higher Q_g; larger footprint and higher gate drive power demand	Selected when >8 A continuous current or enhanced avalanche margin (E_AS = 140 mJ) is required in open-frame industrial systems.

Compared with STP8NK80ZFP and IXTH11N80L2, SIHD11N80AE-T4-GE3 delivers superior power density via DPAK packaging, lowest Q_g-normalized switching loss, and best thermal performance per unit board area - making it optimal for space-constrained server and telecom modules.

Availability

SIHD11N80AE-T4-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial welding inverters requiring stable component supply and long-term production continuity.

Supply support for SIHD11N80AE-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHD11N80AE-T4-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in server, telecom, and industrial power conversion where low gate charge and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHD11N80AE-T4-GE3 at 100 °C case temperature?

The SIHD11N80AE-T4-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within its 1.6 °C/W junction-to-case thermal resistance. At T_C = 25 °C, the rating increases to 8 A. Designers must verify PCB copper area and heatsinking to maintain case temperature within this range during sustained load.

Does SIHD11N80AE-T4-GE3 have built-in ESD protection, and what level is certified?

Yes, SIHD11N80AE-T4-GE3 integrates a Zener diode for gate-source ESD protection, as explicitly stated in its Features section. While the datasheet does not specify exact HBM or CDM test levels, Vishay's material categorization documentation (doc?99912) confirms compliance with industry-standard ESD robustness for automated handling and assembly. This eliminates the need for external gate protection in most applications.

Can SIHD11N80AE-T4-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHD11N80AE-T4-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) energy of 88 mJ, tested under defined conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.5 A). This rating validates its ability to safely absorb inductive energy without failure - a key requirement in motor drives, welding inverters, and relay-driving circuits where voltage spikes occur.

What is the typical reverse recovery time (t_rr) of the body diode in SIHD11N80AE-T4-GE3, and how does it impact switching performance?

The typical reverse recovery time (t_rr) of the integrated body diode in SIHD11N80AE-T4-GE3 is 278 ns at T_J = 25 °C, I_F = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This relatively fast recovery minimizes tail current and associated switching losses during hard-commutation events, directly improving efficiency in flyback, forward, and active-clamp topologies where the body diode conducts during dead time.

Is SIHD11N80AE-T4-GE3 compatible with standard 10 V gate drivers, and what is its gate threshold voltage range?

Yes, SIHD11N80AE-T4-GE3 is fully compatible with standard 10 V gate drivers. Its gate-source threshold voltage (V_GS(th)) is specified from 2 V to 4 V at I_D = 250 μA, ensuring reliable turn-on with 10 V drive while maintaining noise immunity. The device achieves R_DS(on) = 0.391 Ω (typ.) at V_GS = 10 V and I_D = 5.5 A, confirming strong enhancement under common gate drive conditions.

SIHD11N80AE-T4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD11N80AE-T4-GE3 FAQ

1.How can I place an order for SIHD11N80AE-T4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD11N80AE-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD11N80AE-T4-GE3 reliable?

The price and inventory of SIHD11N80AE-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD11N80AE-T4-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD11N80AE-T4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD11N80AE-T4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD11N80AE-T4-GE3?

SIHD11N80AE-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD11N80AE-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD11N80AE-T4-GE3?

For technical support, including SIHD11N80AE-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD11N80AE-T4-GE3 requirements.

6.How does Aetrix verify that SIHD11N80AE-T4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD11N80AE-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD11N80AE-T4-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD11N80AE-T4-GE3?

All SIHD11N80AE-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD11N80AE-T4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD11N80AE-T4-GE3 part is unused and in its original packaging.

Return procedure for SIHD11N80AE-T4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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