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Vishay Siliconix SIHD12N50E-GE3
- Part No.:
- SIHD12N50E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHD12N50E-GE3.pdf
- Description:
- MOSFET N-CH 550V 10.5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,939
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Product details
Overview
SIHD12N50E-GE3 from Vishay Siliconix is a 500 V, 10.5 A N-channel DPAK (TO-252) Power MOSFET optimized for hard-switched SMPS topologies including PFC and flyback converters, featuring 0.330 Ω RDS(on) at VGS = 10 V, 50 nC total gate charge, and 103 mJ single-pulse avalanche energy rating.
For engineers reviewing the SIHD12N50E-GE3 datasheet, SIHD12N50E-GE3 pinout, SIHD12N50E-GE3 application, or SIHD12N50E-GE3 equivalent, this device is selected for high-voltage, medium-current switching where low conduction loss, fast switching, and rugged unclamped inductive switching capability are required in ATX power supplies and LED lighting drivers.
Technical Context
This MOSFET employs planar silicon technology with an integrated body diode rated for 10.5 A continuous source current and 244 ns reverse recovery time at 25 °C. Its low 886 pF input capacitance (Ciss) and 25 nC typical gate charge enable efficient drive with standard gate drivers in 100–500 kHz switching applications.
The device operates across -55 °C to +150 °C junction temperature range, with thermal resistance RthJC of 1.1 °C/W enabling high-power dissipation on modest copper areas. Its 70 V/ns dV/dt immunity and avalanche-rated design support reliable operation in noisy, inductive load environments without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in PFC and offline SMPS |
| RDS(on) max @ 10 V | 0.380 Ω - delivers ≤ 42 W conduction loss at 10.5 A, enabling compact thermal design in DPAK package |
| Qg max | 50 nC - enables <1 μs turn-on/off with 10 Ω gate resistor, reducing switching losses in 200–400 kHz operation |
| EAS | 103 mJ - withstands unclamped inductive energy in flyback and forward converter primary-side switching without failure |
| Ciss | 886 pF - minimizes Miller effect and gate drive power requirement in high-frequency hard-switched topologies |
| ID cont @ TC = 100 °C | 6.6 A - defines usable current derating for sustained operation on standard 2-layer PCB with 1-in² copper pour |
| VGS(th) | 2.0–4.0 V - ensures robust turn-on with 10 V gate drive while avoiding spurious conduction from noise |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main high-side current path terminal | Connected to exposed metal tab - must be soldered to ≥1 in² copper pour for thermal management and low-inductance return path |
| Gate (G) | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage current; sensitive to ESD - requires gate resistor (9.1 Ω typical) and TVS protection |
| Source (S) | Reference node for gate drive and current sensing | Common return for load current and gate driver ground; layout must minimize inductance to prevent ringing during switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 19 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz PFC stages |
| Avalanche energy rated (UIS) | 103 mJ - eliminates need for external clamping circuits in flyback transformer reset and inductive load switching |
| Low Ciss and Crss | 886 pF / 6 pF - reduces Miller-induced shoot-through risk and improves gate drive efficiency in half-bridge configurations |
| Body diode with fast trr | 244 ns - supports synchronous rectification in secondary-side designs and reduces dead-time losses in resonant topologies |
| 150 °C max junction temperature | Enables operation in sealed enclosures or high-ambient industrial environments without forced air cooling |
Applications
| PC Silver Box / ATX Power Supplies | Two-Stage LED Lighting |
|---|---|
|
Use Scenario: Primary-side switch in active PFC boost stage operating at 65–100 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage switching element controlling inductor current to shape AC input current waveform. Use Value: Low RDS(on) and 103 mJ EAS ensure >95 % PFC efficiency and reliability under line surges and startup overloads. |
Use Scenario: Primary-side switch in flyback controller driving constant-current LED strings with 400 V DC input. IC Role / Device Role / Timing Role: Main power switch regulating energy transfer to isolated secondary winding. Use Value: 500 V VDS rating and 244 ns diode trr reduce voltage spikes and improve light-output stability in dimmable drivers. |
| Hard-Switched Two-Switch Forward Converters | Industrial SMPS for Control Systems |
|
Use Scenario: High-side switch in two-switch forward topology delivering 24 V/15 A output from 400 V DC bus. IC Role / Device Role / Timing Role: Voltage-clamped switching device sharing duty cycle with complementary switch and freewheeling diode. Use Value: 70 V/ns dV/dt immunity and low Qgd/Qgs ratio suppress false triggering during cross-conduction transitions. |
Use Scenario: Primary switch in DIN-rail mounted 48 V/10 A industrial power supply operating continuously at 60 °C ambient. IC Role / Device Role / Timing Role: Main power semiconductor handling repetitive 10.5 A peak currents with minimal thermal derating. Use Value: RthJC = 1.1 °C/W and 150 °C TJ max allow full-rated output without heatsink in convection-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK50ZFP | 500 V, 12 A, RDS(on) = 0.38 Ω, Qg = 45 nC, TO-220FP package | Through-hole mounting; higher RthJA (65 °C/W) limits PCB-only thermal performance | Preferred when mechanical robustness and legacy through-hole assembly are prioritized over board space |
| IRFBC40APBF | 500 V, 6.2 A, RDS(on) = 0.85 Ω, Qg = 32 nC, TO-220 package | Lower current rating and higher RDS(on); not suitable for >7 A continuous loads | Acceptable only in lower-power (<150 W), cost-sensitive designs where thermal margin is ample |
Compared with STP12NK50ZFP and IRFBC40APBF, SIHD12N50E-GE3 offers superior power density via DPAK packaging, lower conduction loss at 10 A, and verified avalanche ruggedness - making it the preferred choice for space-constrained, high-efficiency 200–500 W SMPS designs.
Availability
SIHD12N50E-GE3 is available at Aetrix Electronics and suitable for PC silver box / ATX power supplies, two-stage LED lighting, and industrial SMPS requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIHD12N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIHD12N50E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, medium-current switching in hard-switched offline power conversion systems demanding low FOM and proven avalanche capability.
FAQ
What is the maximum continuous drain current for SIHD12N50E-GE3 at 100 °C case temperature?
The SIHD12N50E-GE3 supports 6.6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be validated against actual PCB copper area and airflow conditions in the final design. SIHD12N50E-GE3 maintains safe operation up to 150 °C junction temperature under these conditions.
Does SIHD12N50E-GE3 have avalanche energy rating, and what is its value?
Yes, SIHD12N50E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 103 mJ, measured under standardized test conditions (VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, IAS = 2.7 A). This rating confirms ruggedness in flyback and forward converter applications where inductive energy must be safely absorbed without device failure. SIHD12N50E-GE3 is designed for such stress conditions.
What is the gate threshold voltage range for SIHD12N50E-GE3, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for SIHD12N50E-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. SIHD12N50E-GE3 requires ≥6 V for partial enhancement and ≥10 V for full RDS(on) specification compliance.
Can SIHD12N50E-GE3 be used in place of logic-level MOSFETs in 5 V gate drive applications?
No, SIHD12N50E-GE3 is not a logic-level MOSFET; its VGS(th) minimum is 2.0 V but it requires 10 V gate drive to achieve the specified 0.380 Ω RDS(on). At 5 V, RDS(on) increases significantly (>1.2 Ω), causing excessive conduction loss. SIHD12N50E-GE3 is intended for 10 V gate drive systems - using it with 5 V drive violates its datasheet performance envelope.
What is the thermal resistance from junction to case (RthJC) for SIHD12N50E-GE3, and why is it critical?
The maximum junction-to-case thermal resistance (RthJC) for SIHD12N50E-GE3 is 1.1 °C/W, measured from die junction to the drain tab. This low value is critical because it directly determines how much power can be dissipated without exceeding 150 °C junction temperature - especially important in DPAK-mounted designs where heat is transferred primarily through the drain pad to PCB copper. SIHD12N50E-GE3 relies on proper soldering of the drain tab to achieve this spec.
SIHD12N50E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 550 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 886 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 114W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
SIHD12N50E-GE3 FAQ
1.How can I place an order for SIHD12N50E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHD12N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHD12N50E-GE3 reliable?
The price and inventory of SIHD12N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD12N50E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHD12N50E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD12N50E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHD12N50E-GE3?
SIHD12N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHD12N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHD12N50E-GE3?
For technical support, including SIHD12N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD12N50E-GE3 requirements.
6.How does Aetrix verify that SIHD12N50E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHD12N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD12N50E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHD12N50E-GE3?
All SIHD12N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD12N50E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHD12N50E-GE3 part is unused and in its original packaging.
Return procedure for SIHD12N50E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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